Scribd
Upload
6 views3 pages

HW3 23 Fall

The document outlines Homework #3 for the EE101A Engineering Electromagnetics course, due on October 29, 2023. It includes five problems covering topics such as semiconductor p-n junctions, infinite sheet currents, coaxial cylindrical configurations, and electric fields around a metal sphere in an external field. Each problem has specific tasks and calculations required to demonstrate understanding of the concepts discussed in class.

Uploaded by

kensusanto
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
6 views3 pages

HW3 23 Fall

The document outlines Homework #3 for the EE101A Engineering Electromagnetics course, due on October 29, 2023. It includes five problems covering topics such as semiconductor p-n junctions, infinite sheet currents, coaxial cylindrical configurations, and electric fields around a metal sphere in an external field. Each problem has specific tasks and calculations required to demonstrate understanding of the concepts discussed in class.

Uploaded by

kensusanto
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 3

EE101A Engineering Electromagnetics Fall 2023

Homework #3
Due: Sunday, October 29th, 23:59 PM
Upload onto CCLE under week 3. No late homework is accepted.

7e=7th edition, 6e=6th edition

Problem #1 (25 points) Semiconductor p-n junctions


The junction between positively (p)-doped and negatively (n)-doped silicon is at the heart of
modern semiconductor devices, including p-n diodes and transistors. We can model an
“abrupt” junction as a dielectric material (ϵ = 11.9ϵ0 for silicon) with four regions with charge
density ρ(x).

0, 𝑓𝑜𝑟 𝑥 ≤ −𝑥0
−𝜌0 , 𝑓𝑜𝑟 − 𝑥0 < 𝑥 < 0
𝜌(𝑥) = {
𝜌0 , 𝑓𝑜𝑟 0 < 𝑥 < 𝑥0
0, 𝑓𝑜𝑟 𝑥0 ≤ 𝑥

In this expression, ρ0 is a constant charge density, and x0 is a length of the depletion region on
the p-side (-x0<x<0) and n-side (0<x<x0). The problem has planar symmetry, so there is no
variation of ρ in the y or z directions.
Without worrying about the physics of how these charge distributions are created, we can
find the electric field and scalar potential within the junction region.

(a) The Electric field is zero in the regions x<-x0 and x>x0. Derive a piecewise expression
for E(x) in the region between –x0<x<0 and 0<x<x0.

(b) Find an expression for the scalar potential V(x) in the region –x0<x<x0. You may
assume that V(-x0)=0.

(c) The potential difference V(x0)-V(-x0) is known as the “built-in potential” of a


semiconductor junction. Using the values ρ0=160 C/m3, and x0=0.65μm what is the
built-in potential for this junction?
(While it is not necessary to know this to solve the problem, this charge distribution
is created at the interface between n-doped and p-doped semiconductor. The positive
charge is created by ionized donor atom cores, and the negative charge is created by
ionized acceptor atom cores. The values given above are typical for a Si p-n junction
with doping levels NA=ND=1015 cm-3. This material is covered in great detail in EE2.)

(d) There are other types of junctions where the charge distribution is not so abrupt.
These are called “graded” junctions. Find E(x) and V(x) for the following charge
distribution:
0, 𝑓𝑜𝑟 𝑥 ≤ −𝑥0
2
−𝐺𝑥 , 𝑓𝑜𝑟 − 𝑥0 < 𝑥 < 0
𝜌(𝑥) = 2
𝐺𝑥 , 𝑓𝑜𝑟 0 < 𝑥 < 𝑥0
{ 0, 𝑓𝑜𝑟 𝑥0 ≤ 𝑥

where G is a constant of units (C/m5)


Problem #2 (20 points) Infinite sheet current
(a) Find the B-field and H-field created by an infinite, uniform sheet current density that
flows on the x-y plane along the x-direction (i.e. surface current) of 𝐉𝐬 = 𝐽0 𝑥̂. (J0 is a
constant with units A/m). How does the field depend upon the distance from the
surface?
(b) Repeat part (a) for an infinite slab of current density extending in the x-y plane,
𝐽 𝑥̂, −𝑏 < 𝑧 < 𝑏
whose density is given by 𝐉(𝑧) = { 1 .
0, |𝑧 | > 𝑏
(J1 is a constant bulk current density with units A/m2).
Make sure you give the field for all values of z, and don’t forget the direction.
𝐽 (𝑥̂ + 𝑦̂), −𝑏 < 𝑧 < 𝑏
(c) Now the current density in part (b) is changed to 𝐉(𝑥, 𝑧) = { 1 ,
0, |𝑧| > 𝑏
how does the field depend upon the distance from the surface?

Problem #3 (20 points)

Consider an infinitely long coaxial cylindrical configuration in the z-direction, with


dimensions as shown. The inner core carries a uniform current density –J0𝑧̂ (uniformly
distributed in the shell). The outer shell carries a uniform current density Jout=Jout𝑧̂ (uniformly
distributed in the shell). When giving answers, don’t forget the vector direction. 𝜇 = 𝜇0
everywhere.
(a) Find the H field for all values of r.
(b) What value of Jout is required to ensure H=0 for r>c?
(c) For the condition found in (b), what is the total current Iin carried on the inner
conductor, and what is the total current Iout carried on the outer conductor

Problem #4 (25 points)


When a metal sphere of radius a (with no net charge) is placed in a constant external electric
field E=E0ẑ, the induced surface charge will distort the local field outside of the sphere. One
method to solve for the field in this situation is to use LaPlace’s equation to look for a
solution with an equipotential V=V0 on the surface of the sphere. However, the uniqueness
properties of solutions to LaPlace’s equation allows us to find solutions by any means, as
long as they satisfy the boundary conditions. We propose a trial solution to LaPlace’s
equation that has the form of a linear combination of a dipole potential, a potential for the
applied field, and a constant:
𝑐𝑜𝑠𝜃
𝑉(𝑅, 𝜃) = 𝐵 2 + 𝐶𝑅𝑐𝑜𝑠𝜃 + 𝐷
𝑅
(a) Verify that this trial solution satisfies LaPlace’s Eq in spherical coordinates.
(b) We wish to solve LaPlace’s equation in spherical coordinates to find V(R,θ). We
wish to apply the following boundary conditions:
(i) V=0 at the surface of the sphere R=a (i.e. equipotential surface). (Actually we
could choose any value, but we choose zero to make life easier.
(ii) The field should be unperturbed far away from the sphere: V(z) = -E0z
(voltage linearly dependent on z) for R→ ∞.
Apply the boundary conditions as necessary to find the coefficients B, C, D, and find
V everywhere outside the sphere.

(c) Find the surface charge density ρs(θ) on the surface of the sphere.
(d) Consider the expression for an electric dipole given in equation Ulaby 4.54. We see
above that we can obtain our solution for V(R,θ) by considering the sum of a constant
field term and a dipole term. What is the equivalent dipole moment p required to
obtain our solution in part (b)?

Problem #5 (10 points) Ulaby 4.48 (6e, 7e)

You might also like