Simulation Analysis of Factors Affecting The Quant
Simulation Analysis of Factors Affecting The Quant
1. Introduction
Quantum tunneling effect is one of the most important parts in modern physics, which explains
that quantum objects can tunnel through potential barriers (energy barriers) in a way that is impossible
for particles in classical physics. In classical physics, if the incident energy of a particle is greater
than the height of the potential barrier, the particles will all cross the potential barrier without
reflection; If the incident energy of a particle is less than the height of the potential barrier, then all
particles should be reflected by the potential barrier and cannot pass through it [1]. However, in the
system of quantum mechanics, any particle passing through a finite width potential barrier, regardless
of the magnitude of the incident energy, has a certain probability of passing through or being reflected
by the potential barrier.
A large number of modern devices have utilized quantum tunneling effects, such as scanning
tunneling microscopes, plasma resonators, and nanoelectronic circuit designs [2]. Meanwhile, the
practical application of quantum tunneling effect is also very specific. Scanning tunneling microscope
is a device that utilizes quantum tunneling effect to accurately image at the atomic level. By detecting
changes in micro current on the probe, the arrangement of atoms can be accurately scanned. This has
been one of the main methods used by scientists in recent years to study material surfaces [3]. Some
research teams have also applied this effect to quantum plasmas to accurately obtain the current
density voltage (J-V) in nano scale metal insulator metal (MIM) junctions, and have constructed
corresponding self consistent models [2]. Resonant tunneling diode is the earliest semiconductor
device developed by humans that utilizes the quantum tunneling effect. Although the application
scenarios of this semiconductor device have become diverse with the development of the times, its
application in optoelectronics and logic circuits still requires in-depth research. Some research teams
have demonstrated the magnitude and position of current in the resonance peak by reviewing the
GaAs/AlGaAs double barrier resonant tunneling diode system and adopting new calculation methods
[4]. Due to the special structure of the double potential barrier, a potential well is also formed between
the two barriers, resulting in resonance tunneling effects in the double potential barrier structure. At
1
Highlights in Science, Engineering and Technology ESETEP 2024
Volume 104 (2024)
present, many research teams have conducted theoretical research on the resonance tunneling effect
under this structure, constructed many specific barrier models, and adopted different calculation
methods [5-8].
In order to demonstrate the basic principle of quantum tunneling effect, this study will construct a
one-dimensional symmetric double potential barrier structure model, strictly solve the time-
independent Schrodinger equation in different regions according to the relevant theories of quantum
mechanics, and use the properties of the wave function at the boundary to obtain the expression of
the transmission probability of particles passing through the one-dimensional double-sided potential
barrier, and analyze the relationship between the transmission probability and which variables.
Discuss the change in effective mass of incident particles and their impact on transmission probability
when passing through non square potential barriers (semiconductor heterojunction). Drawing the
graph about relationship between transmission probability and related variables was and summarizing
the physical meaning expressed in the results.
2. Methodology
As shown in the fig. 1, the same height of the one-dimensional double potential barrier, 𝑈1 =
𝑈2 = 𝑈0 . Its potential energy function 𝑈(𝑥) is
𝑈 , 𝑎 < 𝑥 < 𝑏, 𝑐 < 𝑥 < 𝑑
𝑈(𝑥) = { 0 (1)
0, 𝑜𝑡ℎ𝑒𝑟𝑠
The potential barrier widths are 𝐿1 = 𝑏 − 𝑎, 𝐿2 = 𝑑 − 𝑐. The distance between two potential
barriers is𝛥 = 𝑐 − 𝑏. The first, third, and fourth regions are generally superconductors, conductors,
metals, semiconductor materials. Electrons can move freely with zero potential energy, while the
second and fourth regions are generally insulating layers, making it difficult for electrons to pass
through and can be considered as potential barriers.
2
Highlights in Science, Engineering and Technology ESETEP 2024
Volume 104 (2024)
( ) (
2ik1k 2 k12 − k 22 sinh k 2 (L1 + L2 ) − sinh (k 2 L1 )sinh (k 2 L2 ) k12 − k 22 )
2
Here, 𝑚0 is the mass of incident particles, 𝑚𝑁+1 is the effective mass of particles in the right
region of the rightmost potential barrier, 𝑘0 is the wave number of the wave function in the left
region of the leftmost potential barrier, 𝑘𝑁+1 is the wave number of the wave function in the right
region of the rightmost potential barrier. However, when calculating a symmetric square potential
barrier, the incident particle passes through a potential barrier with the same periodic potential, and
its effective mass does not change, therefore
𝑚0 𝑘𝑁+1
=1 (7)
𝑚𝑁+1 𝑘0
And the transmission probability can still be numerically simulated using Eq. (5).
3
Highlights in Science, Engineering and Technology ESETEP 2024
Volume 104 (2024)
Figure 2. The relationship between the transmission probability and potential barrier width of one-
dimensional double potential barriers
As shown in Fig. 3 is the relationship between the transmission probability and potential barrier
spacing of one-dimensional double potential barriers. The incident particle is an electron, and the
incident energy of the particle is 𝐸 = 5𝑒𝑉, the potential barrier height is 𝑈0 = 10𝑒𝑉,the potential
barrier width 𝐿 = 1𝑛𝑚. When the potential barrier spacing is 0, there is only one potential barrier in
the structural model, which conforms to the single potential barrier structural model, and the
transmission probability is less than 1. As the distance between potential barriers increases, the
transmission probability gradually increases to 1 and then decreases again, showing a clear periodic
oscillation relationship, and the oscillation period remains unchanged. The Fig. 4 shows when the
potential barrier width increases to 𝐿 = 2𝑛𝑚, the transmission probability still exhibits a clear
periodic oscillation, with no change in the oscillation period, but the minimum transmission
probability decreases and the peak width narrows.
Figure 3. The relationship between the transmission probability and potential barrier spacing of
one-dimensional double potential barriers when 𝐿 = 1𝑛𝑚
4
Highlights in Science, Engineering and Technology ESETEP 2024
Volume 104 (2024)
Figure 4. The relationship between the transmission probability and potential barrier spacing of
one-dimensional double potential barriers when 𝐿 = 2𝑛𝑚
This phenomenon of periodic oscillation is called resonance tunneling effect. Given a transmission
probability of 1, the expression for the potential barrier spacing can be derived from Eq. (5) as follows:
1 2𝑘1 𝑘2
𝛥= {𝑎𝑟𝑐𝑡𝑎𝑛 [ 𝑐𝑜𝑡ℎ(𝑘2 𝐿)] + 2𝑛𝜋} (8)
𝑘1 𝑘12 −𝑘22
Where n is an integer, it can be inferred from the expression that when the potential barrier spacing
satisfies this equation, the transmission probability reaches its maximum of 1, while when it does not
satisfy this equation, the transmission probability rapidly decreases. This is because the area between
two potential barriers can be considered as a potential well. If the width of the potential well reaches
a specific value which satisfy the equation in Eq. (8), the incident particle will undergo multiple
reflections at the potential well interface after entering the potential well. Because the incident particle
maintains phase coherence in the transmitted wave, there is a possibility that the transmission
probability is close to 1, and making tunneling has resonant characteristic. Therefore, by adjusting
the potential barrier spacing, resonance tunneling effects can be artificially induced to increase the
transmission probability of particles.
As shown in Fig. 5 is the relationship between the transmission probability and the energy of the
incident particle. The incident particle is an electron, the potential barrier height is 𝑈0 = 10𝑒𝑉,the
potential barrier width 𝐿 = 1𝑛𝑚. When the potential barrier spacing is small (𝛥 = 3𝑛𝑚), as the
incident energy of the particle increases, the transmission probability slowly increases from 0 to 1
and then slowly decreases again, and periodic changes cannot be clearly observed from the curve in
the figure. When the potential barrier spacing increases slightly (𝛥 = 7𝑛𝑚), the growth rate of
transmission probability significantly accelerates, and the second point with a transmission
probability of 1 can be observed on the curve in the figure. When the potential barrier spacing is large
(𝛥 = 15𝑛𝑚), periodic changes of transmission probability can be clearly observed from the curve in
the figure, and as the incident energy increases the oscillation period increases, but the oscillation
amplitude is decreases. Therefore, by synthesizing the curves under three different potential barrier
spacing, one can conclude that the larger the potential barrier spacing, the easier it is for resonance
tunneling to occur.
5
Highlights in Science, Engineering and Technology ESETEP 2024
Volume 104 (2024)
Figure 5. The relationship between the transmission probability and the energy of the incident
particle under different potential barrier spacing
4. Conclusion
To sum up, this study uses the method of solving wave functions in different regions to obtain the
time-independent Schrodinger equation system, and obtains the expression for the transmission
probability of one-dimensional symmetric double potential barriers. The relationship between
transmission probability and potential barrier width, potential barrier spacing, and incident energy is
numerically simulated, and drawing the corresponding curve graphs. It is clearly concluded that the
smaller the potential barrier width, the more likely the incident particle is to undergo tunneling effects.
The transmission probability oscillates periodically with the potential barrier spacing, and the
transmission probability also increases periodically as the energy of the incident particle gradually
increases. Meanwhile, the influence of the incident particle passing through a non square potential
barrier was discussed, and the conclusion was drawn that the non square potential barrier will affect
the effective mass of the incident particle, thereby changing the transmission probability and calculate
the corresponding equation. This research also discusses the relationship and differences between
square and non square potential barriers, as well as their impact on transmission probability. It
explains to some extent how different potential barriers affect transmission probability, which is
beneficial for students in related fields to understand the principles and processes of quantum
tunneling. However, it should be noted that the calculation which factors are related to the
transmission probability of asymmetric double potential barriers are ignored. In the future, similar
computational methods can be used to perform numerical simulations and image analysis on this
structural model.
References
[1] Lao W, Wang M. Quantum tunneling effect and its numerical calculation in wave-packet tunneling.
Journal of Baicheng Normal University, 2021, 35 (5): 7 - 14.
[2] Sneha B, Peng Z. A generalized self-consistent model for quantum tunneling current in dissimilar metal-
insulator-metal junction. AIP Advances 1 August 2019, 9 (8): 085302.
[3] Malati D, Arun V K. Calculation of tunneling current across trapezoidal potential barrier in a scanning
tunneling microscope. J. Appl. Phys. 2022, 132 (24): 244901.
[4] Tao B, Wan C, Tang P, et al. Coherent Resonant Tunneling through Double Metallic Quantum Well States.
Nano Letters, 2019, 19 (5): 3019 - 3026.
[5] Torkhov N. Quantum mechanical state of the quantum system, and tunneling effect (a new approach).
ITM Web of Conferences, 2019, 30 (13): 08014.
6
Highlights in Science, Engineering and Technology ESETEP 2024
Volume 104 (2024)
[6] Su´arez E, Santiago-Acost R D, Lemus R. Symmetry Analysis of the Square Well Potential. J. Phys.:
Conf. Ser. 2023, 2448: 012008.
[7] Février P, Gabelli J. Tunneling time probed by quantum shot noise. Nat Commun 2018, 9: 4940.
[8] Gil-Corrales J A, Vinasco J A, Mora-Ramos M E, Morales A L, Duque C A. Study of Electronic and
Transport Properties in Double-Barrier Resonant Tunneling Systems. Nanomaterials, 2022, 12: 1714.
[9] Li H, Wang X. Study of quantum tunneling of one-dimensional two-side barriers and its numerical
simulations. University Physics, 2022, 41 (1): 5.
[10] Shi P, Li X. Transmission properties of a 1 D periodic quasi-periodic multiple barrier structure. Science,
Technology and Engineering, 2013, 16: 6.
[11] Yao X, Chen L, Liu M, et al. Rational design of Si/TiO2 heterojunction photocatalysts: Transfer matrix
method. Applied Catalysis B: Environmental, 2018, 221: 70 - 76.
[12] Jun Y, Chen L, Chen Z, et al. Study of the asymmetric square barrier quantum tunneling and its numerical
simulations University Physics, 2011, 30 (10): 5.