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Analog Manish

The document discusses various aspects of electronic components, particularly focusing on amplifiers, MOSFETs, and BJTs, including their parameters and operational characteristics. It covers concepts such as input and output resistance, current gain, and voltage gain, along with calculations related to these parameters. Additionally, it provides insights into biasing techniques and the behavior of these components under different conditions.

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ankurraj1209
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21 views40 pages

Analog Manish

The document discusses various aspects of electronic components, particularly focusing on amplifiers, MOSFETs, and BJTs, including their parameters and operational characteristics. It covers concepts such as input and output resistance, current gain, and voltage gain, along with calculations related to these parameters. Additionally, it provides insights into biasing techniques and the behavior of these components under different conditions.

Uploaded by

ankurraj1209
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
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LVN SSERESELEGAEAEAECOCAGADOOANN NINN” Jeca 5103 | ° Sete ee) (Bee “82h 7 Moce/ Regton o or Saturation J- Sultch v FB FB : . he a3 cut ep, Acifue, —+ ampligien @ -Fe Re - This negion fe usu Re ee Col auetted hee cceuse we gare @ Re FB mi # scr conehtdecion e|;ejc bate ip ee et Is colloctor fy - q cormmon49 Np lee Vec es . ee F smau Signal Variation 2 ‘8 tT dtp: 2uncceiSup —+Smau sip. 77 “Tf Oty: 130A WDC value (1easa) Longe H- Asne ee B40 ¥ Apptcation a Sats Ty ueeeates vascalon (vortage Amnptipicr) "te F App. % dasge Sy vasiahon if Power wen ampUufier- He smou 5/9 model & BTT — 5 > EGU” cincuit BIT fre esd Gor analysing the amau 29 of malt 4 High Prep. mecce| cow a. 9. model Used tn analysing +e Amp. Used im amalysing the Amp. at at Ligh yach. eee 7 He bri [h- ramet f Parameter ae Mece) Tmoded © h-parameter modd !— 2 f boparometer eau? + v,= hiT, + here oO Ty = hpT + hove —O PATI VVVVANS z ; - mo + 47> bi —_r ¢ eq: 3 ?, ao thee Ma ‘ip rostce: AR OIT Ying Tr; when Ip node Sr Var Leshort cfreuct Va ohe=™ (Dimensionless) 20 *Reverce voltage gain -k BIT. . oe (Dimensiontees) Mg20 ( Forusased current gain usher lp mode iz short ciresi * be = Zp Sip conductance of BIT : J ( whew 6/p torminal is oper cial). AC signal Source.~ Resics. & AC Source Re =Briasing recistor o& Ip ky ero £0 Op OL 2 tood Resisranuce Rios RRL (ret calculated fuy considering the ebbect e& biasing recrstor Re, [Ars @etiRe} © Output Resfstance (Ré) i= ev lp Kester Amps — calculated Ly con sicteneing the efhect cB Ry- @ vorrate Gatn (Av) t- (etemal vortage GaP) Auge Ma % D> Avg > No =[Vo_" Mi % Vr Ye — 3 Sr Xe >) Ave: Av. Re bs Ri Ro + > Both fr serige ® Gurent Gam t— (Ars) Extermat current gain Aa _r Pre = Ta Koad current) Ts (source v ) Oy current divider 2 Tie TsrRe HM. x Ret Re Fs Rl 4e; Ars= Tox DT. Ayn _@é mn Ts Ret Ry cD) Resistance Leem Log caret wource) $] Rell Re Rr / © Gomer Gain [Ap Av*As] 1} | ope PPP PPPPPPTTVIIIII TN promt tw MOSFET (Metal Oxide Saemitonduster Field eyes Tae 604 Vas [Yas 2 Ven Ven works at VO(tEGE controled resist) Vos < Vas-Ven (Kimear Region Vos % Vas- Vin (saturat?Region > wortage conirerted cecrrend £oUree, (Vas -Ven)® ] > saturation Region 2 vor] —> Region diner 2 ‘ where, Hin= mobility Lox = oxide capacitance wy = Ua th/Lengr Tp =httn Con Z Tp =itntox 2 [vas -Yin) Vos 7 Vag Veh = Ouercirive vent a elYoy pncluctance wn Cox We Knees cen zr Yov =" F channel esictth modutatibn 4 lelste] eutetth of = corath & Vee hen BE = E Ween CFP serdar?” LMNNNEELEREEELE LAER ddd ddA Adee H OSES @ Q 8 $ £. if ES 3 rig es ‘ teow ° iv o r « y ae 3 # i 4 : 5 - - CL fa : eh | sos FMP? Fin. inevemucoiiy 5 towd be ot & fer bi)rran s 9 f eaten Yeliage gan peach of rghit £10 pe r you howe appe F Aegon je. teed ey ane current fn srovn term ER CEE (Mee - Vin J eo "Dc bias ured” ¥ For Unear cenplivcctibn . Se xe 2 [Vac MOSFET 2 “vteL convertor’ of Trans concurctauce (Gm) 2 Gines fmfo. about Low well uoliare, GF S cOmvertod +o CLerremt - Grr = 22 2 OE Rn (Ves-Yn)™_ (Vas -Vin) d%ee Ge 2 Veg oO gm Km (Ves -Vin) ® gm > 2kw(Mes-Mn)®, 2 Tp Mas + Vin Yas- Vin @ gm: Km [8% = laenre On Com PL To to. Jan = Km (Vqe-Vin) ' Jo? Fr) or Sin Ves Ont FP eltage Ga ts Vow Ro (torte) = Vo5-ToRe -fe ho = Vos - Robe Vos + Que to Oe Role > Que to egnof Nas. Ay Ro OS ogee Vys Hf tenaill egnen iste beittout npsaeeg ches edougths Cer a Ge _—— © “ys D Joye s | conss: Oc yottage —» Short Cirerit Const OC current source —> Open ciraut Rotes- Tk you axe analy sur mau signal , then you Raue to replace the MOSFET Lug SMBU Signaf “moctel. cK VIVA ¥999N1. epprerTTPPPrreyiy. Soar? @) For the givens Ampr, cet ven:8 BV { Roz10KM, VineiV ¢ Yy kh = gouAlv?/ W/L 220) VaerQv aud a=o- Find— 7” ‘ OD NC current 70% V0 © gm "® Au=9 (Kn = 5% 2) \ a < as oxo . eh O To = freer tl (Maqs—Yin)~ 2px gogaon(2 ye : eoeat 3 O gn = Ona Knivov) = Vato = 20 < RO rvs ame 4 Te yb flor menel t m a 25° ——F7 vgs Oe AFO acs By considering charmel feugin med! a nes ¢ ofp Resistance init To Loop Reshstance Fu Oratn {force Va channel Ceugth mocluladtion = Boo . 4 = St 7 930 /av5, DB (BHtintow © (Yaa Vin)? (11 205) (FAintow & (Yos- vind? (41 Pe Pos > hos Tee bern BL v, Kn (MGg- Vin) 22 (44 AV ee) avos oe 4 > frm: ge (eu)? F kelat op rlode, > Im %yotr Vout + Vout oO % Ro DP JmVin t Vout + Mote od y, Me Ro So? eC nt awe] cm \ wy Nour sae ( Hy a Vin Roto on H BIT (Bipolar Junction Transistor) oe ee ur) yacmvat > Jt behoves as cutrent controled eament source - > BC Reverse § BE Forward - Wee 2O03V cok, acting | Uk pe fisting Re, + \ Region! la? ' ( i Le fo Vee — dn terme B goin 1 BIT gain more dhan MOSFET . + Smau Signal operat? aud mockel eIT @- Vee BE Tun —~ Forward Bfas- BCTun > Reverse Bras - £0ad e Load Resistance current * be E Rew 4° Resissance FQ Bias Rofl ( Whe =o) 5 e. 3 Te:Is eeelvr 7 Te = 8Tp te @) Yee Hee To OT + - Nee = Vee “To Re = Vee - Pek Ver [Mee Vee - 0+ tv] > For a cttue. reg ten r= = — = — = = o-_ ~ -_ ~ _ ~ ~ ~ ~_ = = oS « r 4 collector current £ Transcontuctance J) BIT io collectow current £ Transconcuct st S 1) Torat Pnsts (fp voltage (Ge)= Vee t be iS [ EE a Vv; & =I (Mee tvee)/vr 7 f BE. nee evr, over _o eveels by = Thermad voy 1S, Due +o bias voltage Woo << Va], Then eee ey ee re . 4 ante le= Te (4* Ss) = [* ies =m be [e? ten faz a6, fqn . St Ps composed oF Oc bias etre) an Lasignedcomponet (f) al | change fr corte cot EDEN po chamges fn Vee ff Tramnon L, to tdend unit! Aver shemen Ssssde eee ~ + ase current & frput Reretanse at Me base Base) *~ —> To determine the Lotap recictance teen, fut Sees Tey Ope + fhret oe ull evaluate tha Torat bace curscout (fa). = fo. AP Io +e Pp atte oe. fe 4 4, tg = to +t Ieee Vp base current atucto OC Sue 40 <} power o Stgn ‘\P apply Sign ap The smau $9 fp resistance tev the Base ¢ cuurctter, Loo tang inte the — Aaenesed Ly (Aq) = ee axe onc pea Paty taps BLY qm Zs Te tans M wy Te. J; Me 3] - le fe = lef [fe a] fe Cpe = Te Me ° 7 ° = tes Tette , Ter ts fe x Te Vee x x a *SMAU Slo Resrstance leo base ancl emPtter fooktng into. embtter (Ae) = Voc i) ic) | * Oc enuttter curren F H Rarationshep b/w he 4 Ay te Et fxte = AeTe Soeadele stat. aa Prek Bebra? Raxaui | | Vee « Vee- bo Re - +l et reait v. (Fer ORe : [—_~v, = T = Mee-TeRe =f. Re : Soe Vee ~ te Re "abe Signet component, Vee = ~teRe Vee = - Jun Moe Re > -InRe ee ee TeRe dd Id ASA SS SS) J) e/ eee oe Av= Vee Vee Vr KE smau_stenal Moelet t- Be Ceybad x. 7 Model) fe= Ime = Pye Yoo aK At Emitter node, Applying Kel, , p 3 le = tot le P - ten Vy - BIT as votrage controled . tS + Gm be Current Source) Soe (2 +P) a edna “hae fret 8 f, ec Q . — qovee= Pry de Pre fa, Ae = Ya Te te € BIT 24 cuteent controled Current Sources 3) 4 ert amp. fe biased +0 operater at temst: coktecter Chere ct qr 1 > OnmAinrespective of the vate Be Ipine troncisper Mamataciurer rauge B = c0i0260. Fine the expected range cd a7, Te, A 1 °B,QK Q)A SIT homing Px100 is biasedat De collector current 2 ima: Fine the value & Gm pre Lrg atthe bias Per - Qs) Fe eines . collector *) For circuit 4, 54 Vee is adljusted to yield a.Oc4 Current imaA+ et artume Mecztfv, Rertokm t Pttoo. Find the. TERRREERER ERE RRA RAE voltage 9U~ms Ik See Ip 0006 cineot volt + Fine = het) # tgct) - a eo (set 2 f, ’ t = a d= ag j Tp > Te f Je) = LEM = o-o40 = T : Rp 500 = ~ Te )ynoe = £ . 0096 ~ je , 306 — ow e) To dm f Vecsi0V } Re=10kQ=1041082 B=100 o~ Ay= Me. -gmRe =-[10%x | Nee 215-1010 Ke = Vow = Sv = ee Gm = Zs tes Sete -~ he te B Vr T - £ eo 3 4 - G Odm- = Sema . Sm Varo Te jmtn = To/y Blentn = */peméay = : Ta)max = Te /p m3) : mS ol%es Bannon @ An)imin = Pominy lem OR)max > Pilg « (i AR = 26 KM- SKY B=100; To=tmA.~ Te/y, = 1mA os Fe-©2fmv = fev L on 400°. toms Gm G) Ke sme, %o 4 be = O100CSimot: B= 50-200 }Te:0-5mA 86 0:2K10' =[20[ me otsmA S00 Of Ema 7000 so = (Zo 2Om. ‘= 0.0 Pom Qo SX10? = Qe Sk , -< 1x10 mA = 10x10 4 = 1OKA 01008 Ko mA = SF = Boke = Pk = ¢oms vee YE yre} | vee Ye frexre} 218V, Reo =10km%, B=100- 928 oO sinin Arp, & a r MP ——s 06 518 must Ge amon magwilinele » @ smau $l moLef + Baste Cond urati comps. po cent e a P ‘pe cs Gq 2 oS 8 i &G Ss oO ce co a b 5 x Gx @. co «QO O& ic SB ce Vw — W characterising Amb, Rsig Sy ‘ bD be Rey f ) Us ety ho te [ + C f° + 4 % ‘ im) Ro determuned Ly > 0, Po doern't Repanl or ’ Z Reig © Sox Fx vase O vourage' gain tne amp; jovi) ST ea ole “taeda J Controlled Source aud Ro neprecent “heveime eqeumalont =} Ha amplifier Op cireuit’ © Cerenga = (6k e Desee. Gr e Vig) * vi ES Puen Vig ee the Gy = put) yee = Re +A (ea ry ~ RorRe “Fare, SAI OY ab © — < Aug © e | Rothe OF Fag ) dddddddddedldlelde’ ‘dd Sat z- I>%e “K considering chawuwel Ih mod. Open veriagAy = ve. (ren vesieaay, 2: anfolite AF Fag (Here Rs <0) Av= Aves Ru : Rot Re Av: Yo, Rei. 1k, v, “perth geet) ll bedd % Bs a | Re Re + Fine My Vig = Vetgs Ax a en, # Roz Re t 7 A a 7 - ImRe j open OP we warns game Risa Boe -FovqrRe A ~ Jol eet #) F Gy: [Av] aa fe 3 ou o ~ heii! — [a mF hs & $ He e ‘of ee o/ ' eee ~ y Co, 4 Oey > Compling CapacHley Lang Co Bypass Capacitor nae 1 i ' 7 fe abe Ote Que to Due to fe 7 lesge © internal capacitance SEEE™EIIIIS SAA ese e/ s [i= ely, -f cons? fAertn® A€OR- 2 WAP veces, = Gn Gs > HE Re SRG IR © oe FAM NM ore oy st ee =o d erg ~ Tee . @® N. fe dl Mrg = Gy Re [- x, = fe Pos o4 Ber bey? oe R59 Bary Sz ¢ Ser (Re Reig) fF S=0 a — {ozo C5 (RR fe o Jee feotatien) TFe (St) (ste)... Tse Ust es). (S41) (St Pe). Ot,» Cop ECs fa considered, i* low fequensy, Response) ay LE < {1p tmpecamce, "7p Fmpectaure SF 99994RR | qi SROSDoPPPPPPPIPPPPTTITAANANA RilTo= -Te RO Re Rot Rk, +t Sec, Ve = = Tep Ro Re RorR+ Te ‘ Ta . Rothe ot 4 [rom equ? ® +® and), we et Overau gain (LF) Ay aM = at Pe Jon (Pane) (5 \ srwe\/ sta Bax Rety 5409p, ivan ) zap ) 3 fm =~ a | pape | Fe Fen gm (Poe) mieP-bank Galn H 8-26 frepuen eg LHaib power reg uency) I= Jw] = el c st9 Va y) 3887 20189 Axx, Nc i Te flnry ; F Goce plot t-[nerpjut when Pe Zane cdietinet] — Cegecare] — +20dB/Aecache — -a0 0B] decade py > Wp, > Wp, > Wz Uqssuropties) J OPO PPPPPPPPPPPPPIVIIVIIIIIT VIE > cop, wy, top, {try So? {Ps (By at beast a pactore 04) fp, ~ Dominant Pole => [fe = f.| * th Dominant pele doesn't exfs tEOMfller Sheonew) fe SPs used in analysing an ampltktioa ain uhich 4 Aegic— ter or capacitor is Connected outpul mode to Input node yA resistance (resistor) fife present blew nodel {ode 2 can Pe replaced with two Aesistot Ren ame Rn such that Rm fr connected Jrom node 4 to Jreerd aul Rn 2s conmerted A[W hode 2 and qrund. oy © Rms Plow "Ry = BR whare ks Ye Bean, Y, oCd-K) Cn of 4-4 Multistage Arn plipien f— [res Bout | asta dehinliestsy a: Aap; pebfective oF cascacling [- i © Te obtain higher gatn @ALesirel fp and ejp Reshsrance ¥ gbsenv.alion © Wp restsiance & the cascated cunp. fs same a4 F/p resistence ot gist ampifgien» feer Re = Ris | Ri = Rts —ehpertive toad. — @ojp resissance A the cascaded dupe i Aono at lp resistance ) eam Lost amplifier tee Ro= Row | eb Ren - -= = = J Ay (vottage Gain) = Av,e Ava* Avg 7 Avy = TTA, J 3 ht mn —> cong hetitowee Ay y Cespective Sp Resith. AAs ay Ria Re = Real Rta a doadsing epyect ee XG Ld arup. (Ar, Az) ae cascaclady then the eblyect rue wad nosictance ef A, is cateclated ty conttoleninng the. eypect of Sip veshetance of An, coset !- Tf ALSR, ? Rigs Smalten. Rist > Awd _ + The decroase im voltage gain ot A; f& due 10 malo Ye resistance. Of An vA caved loading oF pect: Loading egpect #5 thene, ther. Amp lipiots ase coLlec? Prtexa cling Grp Lifter - caseit Pf, itange 5 Fh Ay, > Remain constant: => Non-Frterocting amphi muitfstage Amp. fntoracthn plon-fnteroctin Loading Ebbets Loading Ehpert Presout not Prout Eqypect AY cascading ou curoph Prequeny- H le sdenticat (Non ~frveting Amps) . ; PnP abs Consider a cascade SN sdentical non-interacting (DF) amptigien Ler fer © fry sce cut ohh Prequen ef 3 ¢ ampli tien - & foreng N22, Jaws <4 => fe nereosez. * Lower cloth cB cascaded amplifier i4 alvarys Preafer than Louser eloh ptendivichiad auplipior fre. [fe> fe: | © [tes te Wa | PEEP, <> fy decrease . + [Banctaseten (B11) = Buy eal QUray a Matti sage Ca] BEY SII Idd Se) SaJele) c/o) Se) e/ 0/0/04 Ss BSS H Ditferent configuration Q Multistage Amplifier. < & cascode Congrturation 2 + Fis acoscade <2 ee-cB conyfguearger er Co-CG con ftg- pos oo eR 6IT Mosk &r of Leopedtits t= “fF Applicatedy '~ @ High vouiage gen oO Ke Vecloo der uony ampiffier. ¢ \ " @ righ cement gain To transmft uweclen, cu aque) SX @ tas19.0 Bamdeurlth tange band a @ cascode pad f- @® using BT ae <= Tout Vin Ve tas eee) Gu + PFiut x BE ce) 7 or dv; j CECH) ge a Of Cexrront aun “ “of £B- nl © Usfng MOSFET $- Tout = + gm = OToes Vv I" «cw zal ‘Bos 7 r Gon = Tout x BT . or Ove Prrrepreregqyy ayy .—- Mi ¢cs) =a vy . ge cos gon, | VITTT a 3 vy Ma fp st gaab Neg = Vp nVe J Ditypere ntlal fp afgnol Vern = Wit Yi, ] common meete F/7 signal vet = Vi-V2 Aven = Vit V2 Vet - Vem = owe tM 5 4 vy, AN, = Veto Ver ON [vec Yen : a 2 Mis V2 4 Yom oO 2 Ve Hl Ep, 2g = QVem- VE HN, = Vern + <8 Va = Vers — VP /q, Me Vein = ME Ip = Vern ~ VE 2 z Overau output diff ep Ve = Apm Vet + Acm \e . cen cen é hy Am = Gain (Differential mode) a % + t Dern = Gain (Commen ‘ Differential commen Le ( Mocte) Mode mode ourpat ep “Unetestrec? ” SIAhI SIS SS SS PAIS SY dddd -~ OMRR (Common Mocte J = [ Alam Aen o xdeally cm RR = 0 > (Aer 0) | >. witnowt F/g > ©P-amp acts as comparator S — ve FIB = ' 7 oscillator ein perhorm arithmelee operat”. ce @aser' Vv, ° vy => 7 + : No eles vr Vom MV, ake in same Phase ue Mom=tnverting Vin (MJ oe Vpro 4M3= Y, in Nor Va. c Ear 3} oP %™— vy HH ve Zhe = === ‘) Direct f coupling ot Th S } Coupling by transformer . ai baa BQ) SRI Mare Nec> yoann. » Sfp sik fieg> Bo KHa To find = Vy Liat B Neo Ny ©, + New = 1008 —~ pF ae lee ee D> 12 Fore. vn y Ox v 007107 Ee - 10 = > Vin € 7 0 ee] Spar PPP PPPPPTTPTPPTVIVIVVVVIT YY YY YS 2 ©) Dantingron GnftZ. — dt Ps @ cascade 4% tivo common-collector ov common -drain amplifies» t ([ropeatios s- © Sts o cascade Gtuws comme © High Input Aesistance , ® Low eutput resistance . © ont. voltage ain: © mgh current pain - “Ff Application !— o oO Voltage bub yen PYVVVVTS 2999909171 HT Sadliiglen (air t- St Po au interconnection Aatuwo franistors in eobich then go collectors axe sorted fogether and enue oS gst transistor o => Pile = At Pet Pr Ba overau Pp Ty abating fis — [P= PORTE | Asconnected to Base o% 2” transistor o c = > Plath Ie . 5 (Pa) = ia . s (4+P)Te f “for BIT” : Ter gt apptying Kel at “C’, ‘ Pla* (if) 7 Fe Pile t Po (Ut Pr) Te > Tcl p, + Po (UtPr) : TB ‘ > Tes Pt Po t PrP ‘ Te ‘ P 4 + Let's assume Pik Pp = 100- calculate euerau B oF Dasliugton pairs - oo B= 100ttoo t10e00 = rez00 | A ca CA RT ed amet B& PiPo [+ Ysually “ue can wk ati herent mfrrorlas — © oak 8 ikea): Seswes “sotut? using |, —aaaceee Tp -veme modificat” Cox (Vac? Eos fy lout (CDK Vin $ t Rt R> Temp WAFER (wauar™) Hf Current Mianon t- & “yr + stepr fe Golden current source — Bandgap chacuil a siepts COPY” -paste:] Build mam o Other ” Reforence | a (© Gouie 1908 current meron t- Generator)“ “vas = f7"\(Teer) Mot Tout = f (Vas) > Tout = £"Geer)) ei Gyenerat, Mk eog are nor faenticals Teer * Lam cue yyy Tour = Det we), a Wy, Boi Ma Mg are fdentteat ¢ Prrrpreqqqwyayyyyyy OTE MMe mg 1 om & senier ¢ | Tout Te 2 we, i Application J current Mfrron $— J We © Gurent mPrror Pa used ast constr current source 40 bfas Om @IT oy MOSFET im Tc amplifier . wo @ Ft Ps sek as actie load in Ic ampliziend y +0 ebtam & bough velrage gam Zea = = Passe Ynetrie = Sgt R, LC eel Transf, ae Current: Mirror 6rr- 2 = ° rn Cucrent Minaor « + maul ze pola Tout : Teer* ,- Xt ae jis ce Ter isnot gjuen —— freers an Re eve on} gq ke T nikaalng Hdet Qoank Pa are identical transistor - s er eee Veer = Veer c BOO sek SF Te: Teo Re R) Te = Ter Uv Qc 4 @2 are feenteal ame P) —O nm Te, = Tout 7 pe sett i> Tree = Te, + RTe, > Teer = Te, + & Tey ~ - > Teens x Bro Te, = Te, Tout & (£24) U taste “J > Teer = Tour (Pz) = [Tout = Ther (pea) lee ag 2 neglected fee = Trer 2 Leer / Gt %p) i—=7—F—F— FC + Dinexential: Aeipli nen (To amputzy atfference A, tivo Input sfpnot) ~N fso © Pe saul Viva | @ Age ee + Differential 67g t- Ket we haue tuo *9- If 21g has dfferental then trey haue equal lL epp. amount % deuiatien - Nef TT 7 Vem (common make) VIII INS ¢ t f conait” ¢- © They may wate usith equal £ opp. amount .« @ They have sate auctage value (IC). /e.( Verve state) R VUE) = Vo SPnaot + Vem Valt)= -V_ Sinwt t Vem t Sirotar Othperentiat (Rm fH wae, f Four ditt amp. eontigurat 2 © Dust tip balance %p. @ Duol fp unbalanced ep. PPPPTIPIRR @singie tip balanced Op. ay ® Single fp unbalanced Op. = ~ For the given cirut, Assumed Transistor hae lange P- calustate Te Ort transistor ane Slewdicad Oxy Emitter junc” anea BQ, fs whalp thet cB Gz, Calectate Se applying KvL, 4:3(1) + (Vee #(-5))® = 0 4-300) 2 $- 6-1) @ det Q)-A 1 Pa\= QA. Jaren /area wr THA T= &xtma r= ama sev If Transistor has laxqe PB tp -edv Find operating potnt 2% Q- Apptying kvk 4:3(T) + (vee + (-10x) O07 = O > 4:35) 2 10-1 > Tis ee ee ‘° [E=Eea] Wie wLOVHR7 CT) + Vee =O - Varo Pe let FE wee = 1 KE Yee 20-7 Me \F BS Neo = lop g-4 x7 => oe ee ee = 10-7- 895 Ne = 10- Conaet) = 406 oe Ves -or? For Fiven cirusit, SP transistors ame fdentical aud Aasege Be Caleutate Io, X,, 22473. Gels Appi img kvl, Ve)o, = OrTt 2 CF) = BTV, S- 2631, 4 Ver - 2h =O > S-42To F971 =0- . < Vee = Va-V_e = @ Be gs ataece lee = Ve-Ve =@-7V 3a.7-Ve = ov aL. > ena) Note A Transistor Gas = nequiteedD Mtl Transiter xaSREnRa (4 for Grrent mérver_) Va) ae= Ye)e,= Valea: Valo, ayy" 1 ] « | « 4} y9" « ] « , A t 4 TTTT T Pre vr | TTT - 99 BS _ f¥ind the To expression fn terme oy Tref: Be Dt toy Polk .2— te Mos Ditterention P as = — — - # Oc Analysts of Qual Yp balanced O/p Uff: cmp: 7— Re, = Rea = Re Ae Re, = Rew = Rs "Q, @ Qa ase identical” \ 7 7 v, (Te, Vee) oe “VTS t = <= Reo ate uh -Ver Applying kvl, TeRe,tvee + 2T¢ Re - Veg = O "9 Te 2 Te f Te: Te B Te Rs + Vee t+ 2Te Re -Vee = 0 : i € Bare 2Re | = Ver-Vee Vee = Ve - Ve B TH &s/p << BR. Te = Vee-Vee Te doesn't Lepenk 28 low Ren VIPAPPEOPPPLATTT: a) Bae

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