COLLEGE OF ENGINEERING

AC7 – Basic Electronics

2nd Semester S.Y. 2024-2025
Quiz # 1

NAME: _____________________________ SCORE: ___________

COURSE & SECTION: _______________ DATE: _____________
ENGR. EFRYL JHON D. REYES

I. IDENTIFICATION: Read the statements/questions carefully and write your

answer on the space provided. Erasures/Iterations in final answer means wrong.

___________________1. The name of pure semiconductor material that has an equal number
of electrons and holes.
___________________2. The chemical bond that is present in a crystal lattice of silicon
atoms.
___________________3. In materials, what do you call the area that separates the
valence band and the conduction band?
___________________4. At absolute zero temperature, semiconductors act as
___________________5. The electron flow in a semiconductor material is _____________ in
direction of hole flow.
___________________6. Typical range of the resistivity of a semiconductor
___________________7. The process of adding impurities in a semiconductor material.
___________________8. Impurities with five valence electrons.
___________________9. If the substance used in doping has less than four valence
electrons, it is known as
___________________10. The most extensively used semiconductor.
___________________11. Conduction of electrons in a doped semiconductor happens at
___________________12. Theoretically, where does the conduction of holes occur in a
doped semiconductor?
___________________13. In the energy band diagram of a doped semiconductor, the donor
level is near the _____________
___________________14. In a semiconductor material, what will happen to the number of
free electrons when the temperature rises?
___________________15. The electrical resistance of a semiconductor material will
________ as the temperature increases.
___________________16. It is defined as the energy acquired by an electron moving
through a potential of one volt.
___________________17. At room temperature, in a perfect silicon crystal, the
equilibrium concentration of thermally generated electrons in the conduction band is
about
___________________18. Chemical bond that is significant in metals.
___________________19. A semiconductor that is free from impurities.
___________________20. If the substance used in doping has less than four valence
electrons, it is known as

II. PROBLEM SOLVING. Solve the problem correctly. Show your complete solution
at the back of the paper. ERASURES/ITERATIONS IN FINAL ANSWER MEANS WRONG.

1. A material has a resistivity of 50 ohm-cm and a cross-sectional area of 10 sq. mm.

Determine the resistance of 8 meters of this material. (5pts)
Final Answer: _______________

2. A copper wire with a resistivity of 1.68 × 10⁻⁶ ohm-cm has a length of 500 meters
and a resistance of 2 ohms. What is the cross-sectional area of the wire in square
millimeters? (5pts)
Final Answer: _______________
 COLLEGE OF ENGINEERING
AC7 – Basic Electronics
2nd Semester S.Y. 2024-2025
Quiz # 2

NAME: _____________________________ SCORE: ___________

COURSE & SECTION: _______________ DATE: _____________
ENGR. EFRYL JHON D. REYES

I. IDENTIFICATION: Read the statements/questions carefully and write your

answer on the space provided. Erasures/Iterations in final answer means wrong.

___________________1. What is formed when n-type and p-type semiconductors are brought
together?
___________________2. The device that is formed when an n-type and p-type
semiconductors are brought together.
___________________3. An external voltage applied to a junction reduces its barrier and
aid current to flow through the junction.
___________________4. A device containing an anode and a cathode or a pn junction of a
semiconductor as the principal elements and provides unidirectional conduction.
___________________5. The area in the semiconductor diode where there are no charge
carriers.
___________________6. What do you call the very small amount of current that will flow
in the diode when it is reverse biased?
___________________7. The minimum voltage required before a diode can totally conduct
in a forward direction.
___________________8. What will happen to the threshold voltage of the diode when it
operates at higher temperatures.
___________________9. The forward current in a conducting diode will ______________ as
the operating temperature increases.
___________________10. As the operating temperature of a reverse-biased diode is
increased, its leakage or reverse saturation current will ________ exponentially.
___________________11. Normally, diodes will not conduct when reverse-biased, but if
the reverse voltage is increased further, a point will be reached where the diode gives
up and allowing the current to surge. This voltage is one of the limiting parameter of
diodes and is known as
___________________12. The breakdown voltage of a junction diode will _____________ as
operating temperature rises.
___________________13. In every increase of 10°C in the operating temperature of a
diode will cause its reverse saturation current to
___________________14. What do you call the resistance of the diode when operating at a
steady state voltage?
___________________15. The resistance of the diode that is significant when operating
with a small ac signal.
___________________16. When a diode is used in large ac voltages, the resistance that
is to be considered is
___________________17. At forward bias condition, what will happen to the diode
resistance when the applied voltage is increased?
___________________18. The primary use of Zener diode in electronic circuits.
___________________19. What capacitance is significant when the diode is forward
biased?
___________________20. The time taken by the diode to operate in the reverse condition
from forward conduction.
II. PROBLEM SOLVING. Solve the problem correctly. Show your complete solution
at the back of the paper. ERASURES/ITERATIONS IN FINAL ANSWER MEANS WRONG.

1. The reverse saturation current of a silicon PN junction diode is 10μA. Calculate the
diode current for the forward-bias voltage of 0.6V at 25°C. (5pts)
Final Answer: ________________

2. A silicon diode has a reverse saturation current of 2pA at room temperature. At what
temperature will the reverse saturation current double from its value at 25°C? (5pts)
Final Answer: ________________

3. A silicon diode has a threshold voltage of 1.5V at 27ºC. At what temperature will
the threshold voltage drop to 1 V? (5pts)
Final Answer: ________________