ch04 Imperfections in Solids
ch04 Imperfections in Solids
Imperfections in Solids
There is no such thing as a perfect crystal.
• What are these imperfections?
• Why are they important?
2
Types of Imperfections
• Vacancy atoms
• Interstitial atoms Point defects
• Substitutional atoms
3
Point Defects in Metals
• Vacancies:
-vacant atomic sites in a structure.
Vacancy
distortion
of planes
• Self-Interstitials:
-"extra" atoms positioned between atomic sites.
self-
interstitial
distortion
of planes
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Equilibrium Concentration:
Vacancy
• Equilibrium concentration of vacancy varies with temperature!
Nv −Q v
= exp
No. of atomic sites N kT
Temperature
Boltzmann's constant
-23
(1.38 x 10 J/atom-K)
-5
(8.62 x 10 eV/atom-K)
Nv Nv slope
ln
N N
-Qv /k
exponential
dependence!
T
1/T
vacancy concentration
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Estimating Vacancy Concentration
• Find the equil. # of vacancies in 1 m3 of Cu at 1000°C.
• Given:
ρ = 8.4 g /cm 3 A Cu = 63.5 g/mol
Q v = 0.9 eV/atom N A = 6.02 x 1023 atoms/mol
0.9 eV/atom
Nv - Qv
= exp = 2.7 x 10-4
N kT
1273 K
8.62 x 10-5 eV/atom-K
1× ρ
=
for 1 m3 N = 8.0 ×1028 sites/m3
ACu / N A
• Answer:
N v = (2.7 x 10-4)(8.0 x 1028) sites = 2.2 x 1025 vacancies
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Point Defects in Ceramics (i)
• Vacancies
-- vacancies exist in ceramics for both cations and anions
• Interstitials
-- interstitials exist for cations
-- interstitials are not normally observed for anions because anions
are large relative to the interstitial sites
Cation
Interstitial
Cation
Vacancy
Anion
Vacancy 8
Point Defects in Ceramics (ii)
• Frenkel Defect
-- a cation vacancy-cation interstitial pair.
• Shottky Defect
-- a paired set of cation and anion vacancies.
Shottky
Defect:
Frenkel
Defect
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Point Defects in Ceramics (iii)
Nonstoichiometry
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Equilibrium number of defects
Q fr
Number of Frenkel =
N fr N exp(− )
defect 2kT
Qs
Number of Schottky =
N s N exp(− )
defect 2kT
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example
Calculate Schottky defect per cubic meter in potassium chloride at
500 ℃. Qs = 2.6 eV, KCl density = 1.955 g/cm3 at 500 ℃.
N Aρ
N=
AK + ACl
(6.022 ×1023 atoms / mol )(1.955 g / cm3 )
=
(39.10 + 35.45) g / mol
= 1.58 ×1028 atoms / m3
2.6eV
Ns =
(1.58 ×1028 ) exp(− )
2(8.62 ×10−5 eV / K )(500 + 273) K
= 5.31×1019 defects / m3
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Impurities in Metals (i)
Two outcomes if impurity (B) added to host (A):
• Solid solution of B in A (i.e., random dist. of point defects)
OR
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Interstitial site in BCC
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Interstitial site in FCC
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Impurities in Metals (ii)
Conditions for substitutional solid solution (S.S.)
• Hume – Rothery rules
– 1. Δr (atomic radius) < 15% (atomic size factor)
– 2. Same crystal structure for pure metals
– 3. Proximity in periodic table
• i.e., similar electronegativity factor
– 4. Valency
• If other conditions being equal, a metal will have a
greater tendency to dissolve a metal of higher valency
than one of lower valency
16
Impurities in Metals (iii)
Application of Hume–Rothery rules – Solid
Solutions Element Atomic Crystal Electro- Valence
Radius Structure nega-
(nm) tivity
1. Would you predict Cu 0.1278 FCC 1.9 +2
more Al or Ag C 0.071
H 0.046
to dissolve in Zn? O 0.060
Ag 0.1445 FCC 1.9 +1
More Al because size is closer and val. Is
Al 0.1431 FCC 1.5 +3
higher – but not too much – FCC in HCP
Co 0.1253 HCP 1.8 +2
Cr 0.1249 BCC 1.6 +3
Fe 0.1241 BCC 1.8 +2
2. More Zn or Al Ni 0.1246 FCC 1.8 +2
in Cu? Pd 0.1376 FCC 2.2 +2
Zn 0.1332 HCP 1.6 +2
Surely Zn since size is closer thus
causing lower distortion (4% vs 12%)
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example
Compute the radius r of an impurity atom that just fits into a BCC
octahedral site
4R
2 R + 2r =
3
r = 0.155 R
Figun_06_p152
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Impurities in Ceramics
• Electroneutrality (charge balance) must be maintained
when impurities are present
• Ex: NaCl Na + Cl -
cation
• Substitutional cation impurity vacancy
Ca 2+
Na +
Na +
Ca 2+
without impurity Ca 2+ impurity with impurity
• Substitutional anion impurity anion vacancy
O2-
Cl - Cl -
without impurity O2- impurity with impurity
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Point Defects in Polymers
• Defects due in part to chain packing errors and impurities such
as chain ends and side chains
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Specification of composition
– weight percent
m1
C1 = x 100
m1 + m2
m1 = mass of component 1
m2 = mass of component 2
n m1
– atom percent C =
'
x 100
n m1 + n m 2
1
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Composition conversion
22
Composition in mass per unit volume
23
example
m1
C1 = x 100
m1 + m2
24
example
25
example
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Line Defects
Dislocations:
• are line defects,
• slip between crystal planes result when dislocations move,
• produce permanent (plastic) deformation.
slip steps
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Linear Defects in Solids
Linear Defects (Dislocations)
– Are one-dimensional defects around which atoms are
misaligned
• Edge dislocation:
– extra half-plane of atoms inserted in a crystal structure
– b perpendicular (⊥) to dislocation line
• Screw dislocation:
– spiral planar ramp resulting from shear deformation
– b parallel (||) to dislocation line
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Imperfections in Solids
Edge Dislocation
b
Dislocation
line
Burgers vector b (b)
(a)
Adapted from Fig. 6.10, Callister & Rethwisch 9e.
[Figure (b) from W. T. Read, Jr.,Dislocations in Crystals,
McGraw-Hill Book Company, New York, NY, 1953.]
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VMSE: Screw Dislocation
• In VMSE:
– a region of crystal containing a dislocation can be rotated in 3D
– dislocation motion may be animated
Edge
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Imperfections in Solids
Dislocations are visible in electron micrographs
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interfacial Defects in Solids
• External surface
• Grain boundaries
• Phase boundaries
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interfacial Defects in Solids
• Stacking faults
– For FCC metals an error in ABCABC packing sequence
– Ex: ABCABABC
35
Microscopic Examination
36
Optical Microscopy
• Useful up to 2000X magnification.
• Polishing removes surface features (e.g., scratches)
• Etching changes reflectance, depending on crystal
orientation.
crystallographic planes
Fig. 6.19(b) & (c), Callister &
Rethwisch 9e.
0.75 mm
37
Optical Microscopy
Grain boundaries...
• are imperfections,
• are more susceptible
to etching,
• may be revealed as polished surface
dark lines,
• change in crystal surface groove
orientation across grain boundary
(a)
boundary.
ASTM grain
size number
N = 2 n -1
• Polarized light
– metallographic scopes often use polarized
light to increase contrast
– Also used for transparent samples such as
polymers
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Microscopy
Optical resolution ca. 10-7 m = 0.1 μm = 100 nm
For higher resolution need higher frequency
– X-Rays? Difficult to focus.
– Electrons
• wavelengths ca. 3 pm (0.003 nm)
– (Magnification - 1,000,000X)
• Atomic resolution possible
• Electron beam focused by magnetic lenses.
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Scanning Tunneling Microscopy
(STM)
• Atoms can be arranged and imaged!
Photos produced from the
work of C.P. Lutz,
Zeppenfeld, and D.M. Eigler.
Reprinted with permission
from International Business
Machines Corporation,
copyright 1995.
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Grain size
• Linear intercept
• counting numbers of grain boundary intersections by
straight lines
LT
l =
PM
l : a measure of grain diameter
P: number of intersections
LT : total length of lines
M : magnification
42
Grain size
• Comparison
• Compare grain structure with standard charts
(numbers of grains per unit area)
n = 2G −1
n : average number of grains per square inch
G: grain-size number
magnification=100
M 2
nM ( ) = 2G −1
100
nM : average number of grains per square inch
G: grain-size number
magnification=M
G=
−6.6457 log l − 3.298
( l in mm)
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example
Grain-size computation
(a) Intercept length
(b) ASTM grain-size number
16000
=M = 160
100
length of each line = 50mm
Figun_06_p173a
line no.
total length =7 × 50 =350mm 1 8
2 8
3 8
350 4 9
=l = 0.0377 mm 5 9
58 ×160
6 9
G= −6.6457 log l − 3.298 7 7
=58 Figun_06_p173b
= 6.16
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Summary
• Point, Line, and Area defects exist in solids.
• The number and type of defects can be varied
and controlled (e.g., temperature controls vacancy
concentration).
• Defects affect material properties (e.g., grain
boundaries control crystal slip).
• Defects may be desirable or undesirable
(e.g., dislocations may be good or bad, depending
on whether plastic deformation is desirable or not).
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