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Lecture 1 & 2

The document outlines the curriculum for the Industrial Electronics course at the Dar es Salaam Institute of Technology, focusing on power electronic devices and their applications. It covers various components such as power diodes, thyristors, and their operational characteristics, including advantages, disadvantages, and protection methods. Additionally, it discusses the importance of these devices in controlling and converting electric energy in various applications.

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0% found this document useful (0 votes)
17 views30 pages

Lecture 1 & 2

The document outlines the curriculum for the Industrial Electronics course at the Dar es Salaam Institute of Technology, focusing on power electronic devices and their applications. It covers various components such as power diodes, thyristors, and their operational characteristics, including advantages, disadvantages, and protection methods. Additionally, it discusses the importance of these devices in controlling and converting electric energy in various applications.

Uploaded by

deowelsaguge
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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DAR ES SALAAM INSTITUTE OF TECHNOLOGY

INDUSTRIAL ELECTRONICS
ETU 05102

SEMESTER 1- 2024/2025

BENG 24 EE-1/2&3

LECTURE 1 &2
1
OUTLINE

• Introduction
- power electronic circuits and devices
- Applications of power electronic circuits and devices
- Examples of power electronic devices

• Power diode
• Thyristors
• Power BJT
• Power MOSFET
• IGBT
• GTO

• Rectifiers
• Inverters
• Converters 2
INTRODUCTION

• Power electronic devices are devices that are used for conversion and control of electric energy. The figure
below shows the basic functioning of power electronic system, thus performs conversion of electric energy. It also
controls the amount of electric energy to be given to the output.

Electric energy in one form Power electronic Electric energy in another form
system

Control and conversion


• Examples of power electronic devices are:
- Power diode, thyristor, power BJT, power MOSFET, IGBT, GTO, TRIAC, etc.
• Applications of power electronic devices includes:
- Speed control of motors.
- Uninterruptible power supplies and stand- by power supplies ( UPS ).
- Power control in resistance welding, induction heating, electrolysis, process industry, etc.,.
- Power conversion for HVDC and HVAC transmission system.
- High voltage supplies for electrostatic precipitators, and x-ray generators, etc..
- Power supplies for communication systems, telephone exchanges, satellite systems, etc. 3
POWER DIODES

 Power diode is a two terminal device consisting of two terminals named as anode (A) and cathode (C). If terminal A
experiences a higher potential compared to terminal C, the device is said to be forward biased and a current called forward
current (If) will flow through the device in the direction as shown..
If

P N
A C
Structure of a power diode
Symbol of a power diode

 A power diode metal-semiconductor interface device is different from a normal standard pn-junction diode, in
terms of its structural features and dimensions.
 The power diode primarily conducts current in one direction by blocking the current flow in the reverse direction,
with lower resistance in that direction and high resistance in the reverse direction.
 In power electronics power diode is of much importance since it can be used in many applications such as power
supply and rectification purposes. 4
POWER DIODES

Operation of power diodes

It operates on the principle of a semiconductor junction; in


power diodes P-type semiconductor is connected to an N-
type semiconductor material. When a positive voltage is
applied to the P-type side and a negative voltage to the N-
type side (forward bias), it allows current to flow easily
through the diode with a lower voltage drop. However,
when the polarity of the applied voltage is reversed
(reverse bias), the diode blocks most of the current flow This characteristic is vital in preventing undesired
due to the creation of a depletion layer that significantly reverse currents in circuits and maintaining the
increases resistance. desired direction of current flow.
5
POWER DIODES

Characteristics of Power Diode


 V-I characteristics of Power Diode
 When the anode potential is positive with respect to the cathode,
the diode is said to be forward biased and the diode conducts.
 A conducting diode has a relatively small forward voltage drop
across it.
 When the cathode potential is positive with respect to the an ode,
the diode is said to be reverse biased.
 Under reverse-biased conditions, a small reverse current (also
known as leakage current) in the range of micro- or milliampere
flows and this leakage current increases slowly in magnitude with
the reverse voltage until the avalanche or zener voltage is reached. 6
POWER DIODES

 The v-i characteristics as shown in Figure above can be expressed by an equation known as Schockley diode
equation, which is given under DC steady-state operation by:

The voltage VT is a constant called thermal voltage.

Where
ID = current through the diode, A;
VD = diode voltage with anode positive with respect to
cathode, V;
IS = leakage (or reverse saturation) current, typically in
the range 10-6 to 10-15 A;
n = empirical constant known as emission coefficient,
or ideality factor, 1 to 2.
POWER DIODES

Reverse Recovery Characteristics

Assignment 1

Prepare not than 5 slides (PPT) concerning Reverse Recovery Characteristics

8
POWER DIODES

Types of Power Diode


Power diodes can be classified into three categories depending on the recovery characteristics
and manufacturing techniques:
1. Standard or general-purpose diodes
2. Fast-recovery diodes
3. Schottky diodes
General-purpose diodes
 They are designed to handle high power levels in the electronic circuits. They are used for Handling higher currents and
Voltages which makes them suitable for power supply and Control Applications.
 Have relatively high reverse recovery time, typically 25 µs;
 Are used in low-speed applications, where recovery time is not critical (e.g., diode rectifiers and converters for a low-input
frequency up to 1kHz applications and line-commutated converters).
 Current ratings from less than 1 A to several thousands of amperes, with voltage ratings from 50 V to around 5 kV. 9
POWER DIODES

Fast-Recovery Diodes
 Fast Recovery diodes which are also known as fast-recovery epitaxial diodes (FREDs).
 It has Short Recovery time(trr) which is mainly in the range of nanoseconds to microseconds.
 This makes this diode to rapidly switch off when applied voltage polarity changes which reduces switching losses
and improve efficiency.
 These diodes can have a faster recovery time after being forward biased. Thus, they can be turned off quickly and
hence can be used in high frequency applications such as AC-DC converters.
 Current Rating: 1 A to 100 A and Voltage Rating: 50 V to 3 kV.
 These diodes have higher efficiency due to their lower reverse recovery time, which allows them to save energy
and minimize power dissipation during transition from one state to other.
 Applications: These diodes are used in circuits requiring high-speed switch transitions and high frequency
optimization devices, such as power supplies, inverters, motor drives, and various rectification devices 10
POWER DIODES

Schottky Diodes
 Schottky diode is another type of power diode which is also known as Schottky barrier diodes (SBDs).
 Schottky barrier diode (SBDs) are used due to its fast switching speed, low forward voltage drop, and high
efficiency.
 They have a lower forward voltage drop (0.3V to 0.4V) which is responsible for their reduced power loss and
faster switching.
 Their low forward voltage drop improves the efficiency, making them suitable in power supply and rectification
circuits.
 They have a faster recovery time as compared to other types of power diodes.
 High Reverse Leakage Current.
 Lower peak inverse voltage (PIV): 50 V to 100 V.
 Applications: It is commonly used in higher power applications where good efficiency is required such as high
11
POWER DIODES

Applications of Power Diodes


 It acts as an important rectification device in converting alternating current (AC) to direct
current (DC) and also supplies power to various devices like TV, Laptops, AC etc.
 It is used in freewheeling diodes to protect the SCR (Silicon-controlled rectifier) by
protecting it from the damaged caused due to large reverse recovery voltage generated by the
inductive load.
 It enhances the input power factor and also helps to decrease the ripple components in the
output response.
 It is used in many voltages regulated circuits to stabilize the effect of voltage change in the
output. 12
POWER DIODES

Protection circuits for power diodes

 Snubber circuits are essential for diodes used


in switching circuits. It can save a diode
from overvoltage spikes, which may arise
during the reverse recovery process. A very
common snubber circuit for a power diode
consists of a capacitor and a resistor
connected in parallel with the diode

13
POWER DIODES

Advantages of Power Diodes

 The Power diodes have the larger voltage and current handling capacities, making them appropriate for
applications requiring higher power systems.
 Power diodes have faster switching speed and faster recovery time which makes them suitable for high-
frequency applications the required rapid transitions.
 Power diodes are used for supplying power to power devices and are suitable for converting AC signals to DC
providing large rectification efficiency.
 due to their lower forward voltage drops, power dissipation in power dioses is minimum and have high energy
efficiency in circuits.
 The have the ability to protect the components from high temperature variations and also stabilizes the output
signal.
14
POWER DIODES

Important parameters of power diodes

The most important parameters are the followings:


 Forward voltage, VF is the voltage drop of a diode across A and K at a defined current
level when it is forward biased.
 Breakdown voltage, VB is the voltage drop across the diode at a defined current level
when it is beyond reverse biased level. This is popularly known as avalanche.
 Reverse current IR is the current at a particular voltage, which is below the breakdown
voltage.

15
THYRISTOR

Introduction
 A thyristor is a semiconductor device that works as a
switch in electronic circuits.
 It is a four-layered semiconductor device, consisting
of alternating P-type and N-type materials (PNPN).
 A thyristor usually has three electrodes: an anode, a
cathode and a gate, also known as a control
electrode.

16
THYRISTOR

Introduction
 Operated as bistable switches, operating from
nonconducting state to conducting state.

 Thyristors have
 lower on-state conduction losses
 higher power handling capability
 In low-and medium power applications
thyristors are replaced by power transistors.
 Mostly used in high-power applications.
17
THYRISTOR

Operation of a thyristor

 When the anode voltage is made positive with respect to the cathode,

the junctions J1 and J3 are forward biased

the junction J2 is reverse biased,

only a small leakage current flows from anode to cathode,

thyristor is in the forward blocking, or off-state, condition

the leakage current is known as off-state current ID


18
THYRISTOR

Operation of a thyristor

 If the anode-to-cathode voltage VAK is increased to a sufficiently large value


the reverse-biased junction J2 breaks,
known as avalanche breakdown,
voltage is called forward breakdown voltage VBO,
the other junctions J1 and J3 are already forward biased,
there is free movement of carriers across all three junctions,
resulting in a large forward anode current.
The device is then in a conducting state, or on-state
THYRISTOR

General Operation of a thyristor


 When a positive voltage is applied to the anode (with respect to cathode), the thyristor
is in its forward-blocking state. The junction, J2 is reverse biased. In this operating
mode the gate current is held to zero (open circuit).
 When a positive gate current is injected into the device, J3 becomes forward biased
and electrons are injected from the n-emitter into the p-base. This collected charge
causes a change in the bias condition of J1.
 The change in bias of J1 causes holes to be injected from the p-emitter into the n-base.
These holes diffuse across the n-base and are collected in the p-base. The addition of
these collected holes in the p-base acts the same as gate current. The entire process is
regenerative and will cause the increase in charge carriers until J2. This mode of turn-
on is considered to be the desired one as it is controlled by the gate signal. 20
THYRISTOR

Properties of Thyristors

• It is a unidirectional device
• It Controls DC Power
• It Conducts only one direction
• It has a 3 terminals (Anode, Cathode and Gate)
• It used for medium to high voltage applications
• It is also known as Silicon Controlled Rectifier
• It has many applications like, it is used in Rectifiers, power supplies, Inverters, Battery charges

21
THYRISTOR

Understanding the Role of Thyristors in Power Electronics

 Thyristors in Power Electronics plays an important role in electronics in switching on and off
quickly, making them ideal for use in high-power applications.
 Thyristors are used in circuits that require precise control of voltage and current, such as in
power supplies, motor drives, and inverters.
 In power electronics, thyristors are used in conjunction with other electronic components, such
as capacitors, inductors, and diodes, to create complex circuits that can regulate power output.
 These circuits can be used to control the speed of motors, regulate voltage, and convert DC
power to AC power
22
THYRISTOR

• Important parameters of thyristors


The most important parameters are the followings:
- Temperature, current and voltage ratings, these define maximum or minimum values that set limits on device
capability. For example, DC forward-blocking voltage, DC reverse-blocking voltage, Peak controllable current, Junction
operating temperature, etc.
- Specific characteristics, The maximum value means that the manufacturer guarantees that the device will not exceed the
value given under the specified operating or switching conditions. A minimum value means that the manufacturer
guarantees that the device will perform at least, as well as the characteristic given under the specified operating or
switching conditions..

• Common types of thyristors


- Silicone controlled rectifier (SCR),
- Gate turn-off thyristor (GTO),
- MOS-controlled thyristor (MCT),
- Static induction thyristor (Sith),
- Optically operated thyristor (OPT),
- Bi-directional thyristor (BTH)
- TRIAC 23
THYRISTOR

Applications of Thyristors
Thyristors can support high voltages and contain a simplified approach to switching the on and off
states. So that thyristors has many applications:
• Thyristors are used in speed controls;
• Thyristors are used in light dimmers
• Thyristors are used in Rectifiers
• Thyristors are used in power supplies
• Thyristors are used in Inverters
• Thyristors are used in Battery charges
• Thyristors are used in camera flashes
24
THYRISTOR

Advantages of Thyristors
Thyristors have become standard components because they offer several advantages.
• Fast switching speed
• Good thermal stability
• Low conduction losses
• High reliability
• Speed and the ability to switch currents in microseconds
• Ability to control high voltages and high levels of power
• Lack of moving parts and high reliability
• Ability to control direct current devices, not just routine alternating current 25
THYRISTOR

Disadvantages of Thyristors

• Gate triggering can be sensitive to noise.

• Unidirectional conduction.

• Potential for voltage spikes.

• Lack of inherent turn-off capability.

• Limited frequency response.

• Higher cost compared to some alternatives


26
THYRISTOR

• Protection of a thyristor
To protect a thyristor, from a large di/dt during turn-on and a large dv/dt during turn-off, a snubber circuit is needed. The turn-on
snubber is made by inductance L1 (often L1 is stray inductance only). This protects the thyristor from a large di/dt during the
turn-on process. The auxiliary circuit made by R1 and D1 allows the discharging of L1 when the thyristor is turned off.

The turn-off snubber is made by resistor R2 and capacitance C2. This circuit protects a GTO
from large dv/dt during the turn-off process. The auxiliary circuit made by D2 and R2
allows the discharging of C2 when the thyristor is turned on. The circuit of capacitance C2 and
inductance L1 also limits the value of dv/dt across the thyristor during forward-blocking. In
addition, L1 protects the thyristor from reverse over-currents. R1 and diodes D1, D2 are usually
omitted in ac circuits with converter-grade thyristors. A similar second set of L, C and R
may be used around this circuit in HVDC applications.

Turn-on (top elements) and turn-off (bottom


elements) snubber circuits for thyristors.

Note: Gate circuits


It is possible to turn on a thyristor by injecting a current pulse into its gate. This process is known as gating,
triggering or firing the thyristor. The most important restrictions are on the maximum peak and duration of the gate
pulse current. 27
THYRISTOR

Assignment 2

1. Prepare notes concerning V-I characteristics of thyristor not than three pages

2. Prepare notes concerning turn On and turn Off characteristics of thyristor not than three pages

28
THYRISTOR

• Static characteristic curve of a thyristor


The forward-blocking mode is shown as the low-current portion of the graph
(solid curve around operating point “1”). With zero gate current and positive
VAK , the forward characteristic in the off- or blocking-state
is determined by the center junction J2, which is reverse biased. However, if
the applied voltage exceeds the forward-blocking voltage, the thyristor
switches to its on or conducting-state (shown as operating point “2”).

As the thyristor moves from forward-blocking to forward conduction, the


external circuit must allow sufficient anode current to flow to keep the device
latched. The minimum anode current that will cause the device to remain in
forward conduction as it switches from forward-blocking is called the
latching current IL.
If the thyristor is already in forward conduction and the anode current is
reduced, the device can move its operating mode from forward-conduction
back to forward-blocking. The minimum value of anode current necessary to
keep the device in forward-conduction after it has been operating at a high
anode current value is called the holding current IH. The holding current
value is lower than the latching current value. Typical static characteristics curve of a thyristor 29
TUTORIAL 1

1. Define a power diode, and draw its well-labelled symbol and structure.

2. Explain the operational characteristics of a power diode, and draw its characteristic curve.

3. Mention five areas where power diodes can be used.

4. Define a thyristor, and draw its well-labelled symbol and structure.

5. Explain the operational characteristics of a thyristor, and draw its characteristic curve.

6. Mention five areas where thyristors can be used.

7. State the merits of thyristors over power diodes.

30

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