TIGER ELECTRONIC CO.

,LTD
TO-92 Plastic-Encapsulate Transistors

SS8550 TRANSISTOR (PNP) TO-92

FEATURES 1. EMITTER
Power dissipation
2. BASE
PC : 1 W (Ta=25 ℃)
3. COLLECTOR

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol Parameter Value Unit
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -25 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current-Continuous -1.5 A
Tj Junction Temperature 150 ℃
Tstg Storage Temperature -55-150 ℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max Unit

Collector-base breakdown voltage V(BR)CBO IC=-100uA, IE=0 -40 V

Collector-emitter breakdown voltage V(BR)CEO IC=-0.1mA, IB=0 -25 V

Emitter-base breakdown voltage V(BR)EBO IE=-100μA, IC=0 -5 V

Collector cut-off current ICBO VCB=-40V, IE=0 -0.1 μA

Emitter cut-off current ICEO VCE=-20V, IE=0 -0.1 μA

Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 uA

hFE(1) VCE=-1V, IC=-100mA 85 400

DC current gain
hFE(2) VCE=-1V, IC=-800mA 40

Collector-emitter saturation voltage VCE(sat) IC=-800mA, IB=-80mA -0.5 V

Base-emitter saturation voltage VBE(sat) IC=-800mA, IB=-80mA -1.2 V

Base-emitter voltage VBE(on) VCE=-1V, IC=-10mA -1 V

Out capacitance Cob VCB=-10V, IE=0mA,f=1MHZ 20 pF

Transition frequency fT VCE=-10V, IC=-50mA,f=30MHZ 100 MHz

CLASSIFICATION OF hFE(2)
Rank B C D D3
Range 85-160 120-200 160-300 300-400

B,Sep,2011
 Typical Characteristics SS8550
Static Characteristic hFE —— IC
-250 1000
COMMON
EMITTER -1.0mA
Ta=25℃
-200 -0.9mA Ta=100℃
(mA)

-0.8mA 300

hFE
-0.7mA
IC

Ta=25℃
-150

DC CURRENT GAIN
COLLECTOR CURRENT

-0.6mA
100
-0.5mA
-100 -0.4mA

-0.3mA
30
-50 -0.2mA

COMMON EMITTER
IB=-0.1mA VCE=-1V
-0 10
-0 -1 -2 -3 -1 -3 -10 -30 -100 -300 -1000-1500

COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA)

VCEsat —— IC VBEsat —— IC
-1000 -1.2
β=10 β=10
COLLECTOR-EMMITTER SATURATION

-300
-1.0
BASE-EMMITTER SATURATION
VOLTAGE VBEsat (V)
VOLTAGE VCEsat (mV)

-100
-0.8
Ta=25℃
-30
Ta=100℃
Ta=100℃
-0.6
Ta=25℃
-10

-0.4
-3

-1 -0.2
-1 -3 -10 -30 -100 -300 -1000-1500 -1 -3 -10 -30 -100 -300 -1000-1500

COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA)

IC —— VBE Cob/ Cib —— VCB/ VEB

-1500 100
-1000 COMMON EMITTER f=1MHz
VCE=-1V IE=0/IC=0
Ta=25℃
(mA)

-300
(pF)

Ta=25℃ Cib
IC

-100
C
COLLECTOR CURRENT

CAPACITANCE

-30 30
Cob
Ta=100℃

-10

-3

-1 10
-0.2 -0.4 -0.6 -0.8 -1.0 -0.1 -0.3 -1 -3 -10 -20

BASE-EMITTER VOLTAGE VBE (V) REVERSE BIAS VOLTAGE V (V)

fT —— IC PC —— Ta
1000 1.2
COMMON EMITTER
VCE= -10V
COLLECTOR POWER DISSIPATION

Ta=25℃ 1.0
(MHz)

300

0.8
fT
TRANSITION FREQUENCY

PC (W)

100 0.6

0.4

30

0.2

10 0.0
-2 -6 -10 -30 -100 0 25 50 75 100 125 150

COLLECTOR CURRENT IC (mA) AMBIENT TEMPERATURE Ta (℃ )

B,Sep,2011