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RD 9 Fe

The document provides specifications for the RD9FE NPN transistor, including its features, maximum ratings, and electrical characteristics. It is suitable for applications such as audio amplification and switching circuits, with a maximum collector current of 5 A and power dissipation of 750 mW. Additionally, it includes detailed dimensions and classifications for the transistor's gain.

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Andy Cordero
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83 views3 pages

RD 9 Fe

The document provides specifications for the RD9FE NPN transistor, including its features, maximum ratings, and electrical characteristics. It is suitable for applications such as audio amplification and switching circuits, with a maximum collector current of 5 A and power dissipation of 750 mW. Additionally, it includes detailed dimensions and classifications for the transistor's gain.

Uploaded by

Andy Cordero
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO.

, LTD

TO-126 Plastic-Encapsulate Transistors

RD9FE TRANSISTOR (NPN)


TO-126

FEATURES
z Audio amplifier
z Flash unit of camera 1. EMITTER
z Switching circuit
2. COLLECTOR

MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 3. BASE 123

Symbol Parameter Value Units


VCBO Collector-Base Voltage 42 V
VCEO Collector-Emitter Voltage 22 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 5 A
PC Collector Power Dissipation 750 mW
TJ Junction Temperature 150 ℃
Tstg Storage Temperature -55-150 ℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)


Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=0.1mA, IE=0 42 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 22 V
Emitter-base breakdown voltage V(BR)EBO IE= 10μA, IC=0 6 V
Collector cut-off current ICBO VCB=30V,IE=0 0.1 μA
Emitter cut-off current IEBO VEB=6V, IC=0 0.1 μA
hFE(1) VCE=2V, IC= 0.15 mA 150
DC current gain hFE(2) VCE= 2V,IC = 500 mA 340 2000
hFE(3) VCE=2V, IC = 2A 150
Collector-emitter saturation voltage VCE(sat) IC=3000mA,IB=100 mA 0.5 V
VCE=6V,
Transition frequency fT 150 MHz
IC=50mA,f=30MHz

CLASSIFICATION OF hFE(2)
Rank R T V

Range 400-800 560-950 900-2000


Typical Characteristics D965
Dimensions In Millimeters Dimensions In Inches
Symbol
Min Max Min Max
A 2.500 2.900 0.098 0.114
A1 1.100 1.500 0.043 0.059
b 0.660 0.860 0.026 0.034
b1 1.170 1.370 0.046 0.054
c 0.450 0.600 0.018 0.024
D 7.400 7.800 0.291 0.307
E 10.600 11.000 0.417 0.433
e 2.290 TYP 0.090 TYP
e1 4.480 4.680 0.176 0.184
h 0.000 0.300 0.000 0.012
L 15.300 15.700 0.602 0.618
L1 2.100 2.300 0.083 0.091
P 3.900 4.100 0.154 0.161
Φ 3.000 3.200 0.118 0.126

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