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Nand Gate

The document outlines the design and characteristics of a CMOS NAND gate, utilizing Tanner EDA tools for simulation. It explains the operation of NMOS and PMOS transistors in the circuit, detailing their roles in achieving NAND functionality with low power dissipation. The experiment confirmed the theoretical predictions regarding the gate's performance, highlighting its efficiency and significance in digital circuit design.

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vinja.0115
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48 views3 pages

Nand Gate

The document outlines the design and characteristics of a CMOS NAND gate, utilizing Tanner EDA tools for simulation. It explains the operation of NMOS and PMOS transistors in the circuit, detailing their roles in achieving NAND functionality with low power dissipation. The experiment confirmed the theoretical predictions regarding the gate's performance, highlighting its efficiency and significance in digital circuit design.

Uploaded by

vinja.0115
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Aim ↬ To design and study the characteristics of CMOS NAND Gate.

Software Required ↬ Tanner EDA Tools [S-Edit, T-Spice].


Circuit Elements ↬ PMOS, NMOS, Voltage sources, connecting wires.
Theory ↬
A CMOS (Complementary Metal-Oxide-Semiconductor) NAND gate is a
fundamental digital logic circuit composed of NMOS and PMOS transistors. It
operates by combining the characteristics of a CMOS inverter with the logic
functionality of a NAND gate. The output of a CMOS NAND gate is the complement
of the AND operation on its inputs.
The circuit consists of:
1. NMOS (N-type MOSFETs): These transistors conduct when a positive voltage
is applied to their gates. They are used parallel in the pull-down network to
pull the output to logic '0'.
2. PMOS (P-type MOSFETs): These transistors conduct when their gates are at
low voltage. They are used in series in the pull-up network to pull the output
to logic '1'.
Operation:
1. All Inputs High (Logic '1'):
o NMOS transistors are ON (conducting), forming a low-resistance path
to the ground.
o PMOS transistors are OFF (non-conducting), isolating the output from
the power supply.
o The output is pulled low (logic '0').
2. At Least One Input Low (Logic '0'):
o At least one NMOS transistor is OFF, breaking the connection to the
ground.
o The PMOS transistors form a conducting path in series, pulling the
output high (logic '1').
The complementary configuration ensures low static power dissipation, as only
one network (pull-up or pull-down) conducts in a steady state. This efficiency,
combined with its reliability, makes CMOS NAND gates crucial in modern digital
circuit design.

Circuit Diagram ↬

Fig. i) CMOS NAND Gate Circuit

Fig. ii) Plot conditions and parameter setting


Graphs ↬

Fig. iii) Transient characteristics of CMOS NAND Gate

Result ↬
The experiment successfully demonstrated the characteristics of a CMOS NAND
gate using Tanner EDA tools. The simulation confirmed proper NAND functionality,
aligning with theoretical predictions.
Conclusion ↬
The CMOS NAND gate’s transient behavior was analyzed, confirming efficient logic
operation, minimal delay, and low static power dissipation. The experiment
validated the NAND gate’s theoretical design and practical significance in digital
circuits.
Precautions ↬
▪ Double-check the orientation of NMOS and PMOS transistors in the circuit.
▪ Ensure all connections are correct and components are securely placed.
▪ Do not exceed the voltage ratings of components.

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