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Semiconductor Devices Board Questions

The document is a worksheet for Army Public School Khadki focused on semiconductor devices for XII grade students. It includes various questions related to p-n junctions, intrinsic and extrinsic semiconductors, and their characteristics, as well as circuit diagrams for rectifiers. The worksheet aims to assess students' understanding of semiconductor physics and their applications.

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Revant Harge
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12 views2 pages

Semiconductor Devices Board Questions

The document is a worksheet for Army Public School Khadki focused on semiconductor devices for XII grade students. It includes various questions related to p-n junctions, intrinsic and extrinsic semiconductors, and their characteristics, as well as circuit diagrams for rectifiers. The worksheet aims to assess students' understanding of semiconductor physics and their applications.

Uploaded by

Revant Harge
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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ARMY PUBLIC SCHOOL KHADKI

WORKSHEET ON PYQs - XII


SEMICONDUCTOR DEVICES

1) A pure Si crystal having 5×1028 atoms m−3 is dopped with 1 ppm concentration of antimony. If the
concentration of holes in the doped crystal is found to be 4.5×109 m−3, the concentration (in m−3 ) of intrinsic
charge carriers in Si crystal is about
A)1.2×1015 B)1.5×1016 C)3.0×1015 D)2.0×1016
2) During the formation of a p-n junction:
A)diffusion current keeps increasing.
B)drift current remains constant.
C)both the diffusion current and drift current remain constant.
D)diffusion current remains almost constant but drift current increases till both currents become equal.
3) Assertion (A) : The resistance of an intrinsic semiconductor decreases with increase in its temperature.

Reason (R) : The number of conduction electrons as well as hole increase in an intrinsic semiconductor with
rise in its temperature.
4) In an extrinsic semiconductor, the number density of holes is 4×1020 m−3. If the number density of intrinsic
carriers is 1.2×1015m3, the number density of electrons in it is
A) 1.8×109 m−3 B) 2.4×1010 m−3 C) 3.6×109 m−3 D) 3.2×1010 m−3
5) (a) Explain the characteristics of a p−n junction diode that makes it suitable for its use as a rectifier.

(b) With the help of a circuit diagram, explain the working of a full wave rectifier.
6) Explain the following, giving reasons:

(a) A doped semiconductor is electrically neutral.

(b) In a p - n junction under equilibrium, there is no net current.

(c) In a diode, the reverse current is practically not dependent on the applied voltage.
7) A student wants to use two p-n junction diodes to convert alternating current into direct current. Draw the labelled
circuit diagram she would use and explain how it works.
8)a) State briefly the processes involved in the formation of p-n junction explaining clearly how
the depletion region is formed.

b)Using the necessary circuit diagrams, show how the V-1 cnaracteristics of a p-n junction are
obtained in

i)Forward biasing ii)Reverse biasing

How are these characteristics made use of in rectification ?


9) Draw the circuit diagram of a full wave rectifier and explain its working. Also, give the input and
output waveforms.
10) An AC source of voltage is connected in series with a p-n junction diode and a load resistor. The correct
option for output voltage across load resistance will be:
11) When an intrinsic semiconductor is doped with a small amount of trivalent impurity, then:
(a) its resistance increases.
(b) it becomes a p-type semiconductor.

(c) there will be more free electrons than holes in the semiconductor.

(d) dopant atoms become donor atoms.


12) In the energy-band diagram of n-type Si, the gap between the bottom of the conduction band EC
and the donor energy level EDis of the order of:

(a) 10 eV (b)1 eV (c) 0.1 eV (d) 0.01 eV


13) (a) Differentiate between intrinsic and extrinsic semiconductors.
(b)Briefly explain how the diffusion and drift currents contribute to the formation of potential barrier in a p-n
junction diode
14) The conductivity of a semiconductor increases with increase in temperature because
a) number density of free current carriers increases b) relaxation time increases c) both number density of
carriers and relaxation time increase d) number density of current carriers increases, relaxation time decreases
but effect of decrease in relaxation time is much less than increase in number density
15) a pure Si crystal having 5 x 1028 atoms m-3 is dopped with 1 ppm concentration of antimony. If the
concentration of holes in the doped crystal is found to be 4.5 x 109 m-3, the concentration (in m-3) of intrinsic
charge carrires in Si crystal is about
a) 1.2 x 1015 b) 1.5x 1016 c) 3.0 x 1015 d) 2.0 x 1016

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