TUTORIAL 1

EC2002E ANALOG CIRCUITS

DEVICE STRUCTURE AND PHYSICAL OPERATION

1. MOS technology is used to fabricate a capacitor, utilizing the gate metallization

and the substrate as the capacitor electrodes. Find the area required per 1-pF
capacitance for oxide thickness ranging from 5 nm to 40 nm. For a square plate
capacitor of 10 pF, what maximum dimensions are needed?
2. A particular MOSFET using the same gate structure and channel length as the
transistor whose iD-vDS characteristics are shown in Fig has a channel width that
is 10 times greater. How should the vertical axis be relabelled to represent this
change? Find the new constant of proportionality relating i D and (vGS- Vt)vDS.
What is the range of drain to source resistance, rDS, corresponding to an overdrive
voltage (vGS- Vt) ranging from 0.5 V to 2 V?

Fig.1. The Id-VDS characteristics of the MOSFET

3. With the knowledge that µp = 0.4µn what must be the relative width of n-
channel and p-channel devices if they are to have equal drain currents when
operated in the saturation mode with overdrive voltages of the same magnitude?
4. An n-channel device has k'n = 50 µA/V2 , Vt = 0.8 V, and W/L = 20. The device
is to operate as a switch for small vDS, utilizing a control voltage vGS in the range
0V to 5V. Find the switch closure resistance, rDS, and closure voltage, VDS,
obtained when VGS=5 V and iD = 1mA. Recalling that µp = 0.4µn what must W/L
be for a p-channel device that provides the same performance as the n-channel
device in this application?
5 . An n-channel MOS device in a technology for which oxide thickness is 20 nm,
minimum gate length is 1 µm, k'n= 100 µA/V2 and Vt = 0.8 V operates in the
triode region, with small vDS and with the gate-source voltage in the range 0V to
+5 V. What device width is needed to ensure that the minimum available
resistance is 1 kΩ?
6. Consider a CMOS process for which Lmin= 0.8 µm, tox = 15 nm,
µn = 550 cm2 /V.s and Vt = 0.7 V.
(a) Find Cox and k'n .
(b) For an NMOS transistor with W/L = 16 µm/0.8 µm, calculate the values of
Vov, VGS, and VDSmin needed to operate the transistor in the saturation region with
a dc current ID= 100 µA.
(c) For the device in (b), find the value of Vov and VGS required to cause the
device to operate as a 1000Ω resistor for very small vDS.
7. Consider an n-channel MOSFET with tox = 20 nm, µn= 650 cm2 /V.s ,
Vt = 0.8 V, and W/L = 10. Find the drain current in the following cases:
(a) vGS = 5 V and vDS=1 V
(b) vGS= 2Vand vDS =1.2 V
(c) vGS = 5 V and vDS = 0.2 V
(d) vGS = vDS = 5 V
CURRENT-VOLTAGE CHARACTERISTICS

8. Consider an NMOS transistor that is identical to, except for having half the
width of, the transistor whose iD- vDS characteristics are shown in Fig. How should
the vertical axis be relabeled so that the characteristics correspond to the narrower
device? If the narrower device is operated in saturation with an overdrive voltage
of 1.5 V, what value of iD results?
 Fig.2 The iD-vDS characteristics for a device with k'„ ( W/L) = 1.0 mA/V

9. Explain why the graphs in Fig.2 do not change as Vt is changed. Can you devise
a more general (i.e., Vt independent) representation of the characteristics
presented in Fig. 3?

Fig.3
10. For the transistor whose iD-vGS characteristics are depicted in Fig.3, sketch iD
versus the overdrive voltage vov= VGS -Vt for VDS ≥ Vov What is the advantage of
this graph over that in Fig. 4.12? Sketch, on the same diagram, the graph for a
device that is identical except for having half the width.
11. An NMOS transistor having Vt = 1 V is operated in the triode region with vDS
small. With VGS = 1.5 V it is found to have a resistance rDS of 1 kΩ. What value
of VGS is required to obtain rDS = 200 Ω? Find the corresponding resistance values
obtained with a device having twice the value of W.
12. A particular enhancement MOSFET for which Vt = 1 V and k'n(W/L) = 0.1
mA/V2 is to be operated in the saturation region. If i D is to be 0.2 mA, find the
required vDS and the minimum required vDS. Repeat for iD = 0.8 mA.
13. A particular n-channel enhancement MOSFET is measured to have a drain
current of 4 mA at VGS = VDS = 5 V and of 1 mA at VGS = VDS = 3V. What are
the values of k'n (W/L) and Vt for this device?
14.For a particular IC-fabrication process, the transconductance parameter k'n =
50 µA/V2 and Vt = 1 V. In an application in which vGS = vDS = Vsupply =5V, a drain
current of 0.8 mA is required of a device of minimum length of 2 µm. What value
of channel width must the design use?
15. An NMOS transistor, operating in the linear-resistance region with vDS = 0.1
Vt is found to conduct 60 µA for vGS = 2V and 160 µA for vGS = 4V. What is the
apparent value of threshold voltage Vt? If k'n = 50 µA/V2, what is the device W/L
ratio? What current would you expect to flow with v GS = 3 V and vDS = 0.15 V?
If the device is operated at vGS = 3 V, at what value of VDS will the drain end of
the MOSFET channel just reach pinch off, and what is the corresponding drain
current?
16. For an NMOS transistor, for which Vt = 0.8 V, operating with vGS in the range
of 1.5 V to 4 V, what is the largest value of v DS for which the channel remains
continuous?
17. An NMOS transistor, fabricated with W= 100µA and L = 5µm in a technology
for which k'n = 50 µA/V2 and Vt = 1 V, is to be operated at very low values of vDS
as a linear resistor. For vGS varying from 1.1 V to 11 V, what range of resistor
values can be obtained? What is the available range if
(a) the device width is halved?
(b) the device length is halved?
(c) both the width and length are halved
18. When the drain and gate of a MOSFET are connected together, a two-
terminal device known as a "diode-connected transistor" results. Fig.4 shows
such devices obtained from MOS transistors of both polarities. Show that
(a) the i-v relationship is given by
i=1/2 k’W/L (v-|Vt|)2
(b) the incremental resistance r for a device biased to operate at v = |Vt| + Vov is
given by

Fig.4
19. For a particular MOSFET operating in the saturation region at a constant v GS,
iD is found to be 2 mA for vDS = 4 V and 2.2 mA for vDS = 8 V. What values of r0
VA , and λ correspond ?
20. A particular MOSFET has VA = 50 V. For operation at 0.1 mA and 1 mA,
what are the expected output resistances? In each case, for a change in vDS of 1
V, what percentage change in drain current would you expect?
21. In a particular IC design in which the standard channel length is 2 µm, an
NMOS device with W/L of 5 operating at 100 µA is found to have an output
resistance of 0.5 MΩ., about ¼ of that needed. What dimensional change can be
made to solve the problem? What is the new device length? The new device
width? The new W/L ratio? What is VA for the standard device in this IC? The
new device?
22. For a particular n-channel MOS technology, in which the minimum channel
length is 1µm, the associated value of λ is 0.02 V -1. If a particular device for which
L is 3µm operates at vDS=1 V with a drain current of 80 µA, what does the drain
current become if vDS is raised to 5 V? What percentage change does this
represent? What can be done to reduce the percentage by a factor of 2?
23 An NMOS transistor is fabricated in a 0.8µA process having k'n = 130 µA/V 2
and V’A = 20 V/um of channel length. If L = 1.6µm and W = 16µm, find VA and
λ . Find the value of ID that results when the device is operated with an overdrive
voltage of 0.5 V and VDS = 2 V. Also, find the value of r0 at this operating point.
If VDS is increased by 1 V, what is the corresponding change in iD ?