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2SC5248

The document provides specifications for the isc Silicon NPN Power Transistor 2SC5248, highlighting its collector-emitter breakdown voltage of 160V and suitability for power amplifier applications. It details absolute maximum ratings, electrical characteristics, and hFE classifications, indicating a DC current gain range of 60-200. The transistor is complemented by type 2SA1964 and is designed for various amplifier stages.

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Josimar Vargas
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8 views2 pages

2SC5248

The document provides specifications for the isc Silicon NPN Power Transistor 2SC5248, highlighting its collector-emitter breakdown voltage of 160V and suitability for power amplifier applications. It details absolute maximum ratings, electrical characteristics, and hFE classifications, indicating a DC current gain range of 60-200. The transistor is complemented by type 2SA1964 and is designed for various amplifier stages.

Uploaded by

Josimar Vargas
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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INCHANGE Semiconductor isc Product Specification

isc Silicon NPN Power Transistor 2SC5248

DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 160V(Min)
·Good Linearity of hFE
·Wide Area of Safe Operation
·Complement to Type 2SA1964

APPLICATIONS
·Power amplifier applications.
·Driver stage amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

VCBO Collector-Base Voltage 160 V

VCEO Collector-Emitter Voltage 160 V

VEBO Emitter-Base Voltage 5 V

IC Collector Current-Continuous 1.5 A

Collector Power Dissipation


2
@Ta=25℃
PC W
Collector Power Dissipation
20
@TC=25℃

TJ Junction Temperature 150 ℃

Tstg Storage Temperature -55~150 ℃

isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification

isc Silicon NPN Power Transistor 2SC5248

ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0


B 160 V

V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA; IE= 0 160 V

V(BR)EBO Emitter-Base Breakdown Voltage IE= 50μA; IC= 0 5 V

VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A


B 1.0 V

ICBO Collector Cutoff Current VCB= 160V; IE= 0 1.0 μA

IEBO Emitter Cutoff Current VEB= 4V; IC= 0 1.0 μA

hFE DC Current Gain IC= 0.1A; VCE= 5V 60 200

fT Current-Gain—Bandwidth Product IC= 0.2A; VCE= 10V 150 MHz

COB Output Capacitance IE= 0; VCB= 10V; f= 1MHz 20 pF

‹ hFE Classifications

D E

60-120 100-200

isc Website：www.iscsemi.cn 2

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