Scribd
Upload
45 views4 pages

Diode Semiconductor Korea: PNP Silicon Epitaxial Planar Transistor

The S9012 is a PNP Silicon Epitaxial Planar Transistor with a maximum collector current of -500mA and is complementary to the S9013. It features excellent HFE linearity and is suitable for high collector current applications. The device is packaged in a SOT-23 format and has specified electrical characteristics and maximum ratings at 25℃.

Uploaded by

George David
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
45 views4 pages

Diode Semiconductor Korea: PNP Silicon Epitaxial Planar Transistor

The S9012 is a PNP Silicon Epitaxial Planar Transistor with a maximum collector current of -500mA and is complementary to the S9013. It features excellent HFE linearity and is suitable for high collector current applications. The device is packaged in a SOT-23 format and has specified electrical characteristics and maximum ratings at 25℃.

Uploaded by

George David
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 4

Diode Semiconductor Korea

PNP Silicon Epitaxial Planar Transistor S9012

FEATURES
Pb
z High Collector Current.(IC= -500mA）
Lead-free
z Complementary To S9013.
z Excellent HFE Linearity.

APPLICATIONS
z High Collector Current.

SOT-23

ORDERING INFORMATION
Type No. Marking Package Code

S9012 2T1 SOT-23

MAXIMUM RATING @ Ta=25℃ unless otherwise specified


Symbol Parameter Value Units

VCBO Collector-Base Voltage -40 V

VCEO Collector-Emitter Voltage -25 V

VEBO Emitter-Base Voltage -5 V

IC Collector Current -Continuous -500 mA

PC Collector Dissipation 300 mW

Tj,Tstg Junction and Storage Temperature -55~150 ℃

www.diode.kr
Diode Semiconductor Korea
PNP Silicon Epitaxial Planar Transistor S9012

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified


Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -25 V
Emitter-base breakdown voltage V(BR)EBO IE=-100μA,IC=0 -5 V
Collector cut-off current ICBO VCB=-40V,IE=0 -0.1 μA
Collector cut-off current ICEO VCE=-20V,IB=0 -0.1 μA
Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 μA
DC current gain hFE VCE=-1V,IC=-50mA 120 400
Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB= -50mA -0.6 V
Base-emitter saturation voltage VBE(sat) IC=-500mA, IB= -50mA -1.2 V
VCE=-6V, IC= -20mA
Transition frequency fT 150 MHz
f=30MHz
Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 5 pF

CLASSIFICATION OF hFE(1)
Rank L H J

Range 120-200 200-350 300-400

MARKING 2T1

www.diode.kr
Diode Semiconductor Korea
PNP Silicon Epitaxial Planar Transistor S9012

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

www.diode.kr
Diode Semiconductor Korea
PNP Silicon Epitaxial Planar Transistor S9012

PACKAGE OUTLINE
Plastic surface mounted package SOT-23

SOT-23
Dim Min Max
A 2.85 2.95
B 1.25 1.35
C 1.0Typical
D 0.37 0.43
E 0.35 0.48
G 1.85 1.95
H 0.02 0.1
J 0.1Typical
K 2.35 2.45
All Dimensions in mm

SOLDERING FOOTPRINT

Unit : mm
PACKAGE INFORMATION

Device Package Shipping

S9012 SOT-23 3000/Tape&Reel

www.diode.kr

You might also like