Format of Multiset Question paper for Mid-Semester Test

Birla Institute of Technology & Science, Pilani

Work Integrated Learning Programmes Division
First Semester 2022-2023

Mid-Semester Test
(EC-2 Regular)

Course No. : MEL ZG631

Course Title : Physics and Modeling of Microelectronic Devices
Nature of Exam : Open Book
Weightage : 35% No. of Pages =
Duration : 2 Hours No. of Questions = 4
Date of Exam : 24/09/2022 (FN)
Note to Students:
1. Please follow all the Instructions to Candidates given on the cover page of the answer book.
2. All parts of a question should be answered consecutively. Each answer should start from a fresh page.
3. Assumptions made if any, should be stated clearly at the beginning of your answer.
Q1v1.
I. Determine the probability that an energy level is occupied by an electron if the state is
above the Fermi level (EF) by kT. [2 M]

II. Fermi level (EF) is at 5 eV. Given kT = 0.0259 eV at room temperature. Also, given that
there is a 2% probability that a state at 4.741 eV will be empty of electrons.
Determine the temperature. [2 M]

III. Consider a silicon semiconductor at room temperature which is doped with 1017 /cm3
donor impurities and 1014 /cm3 acceptor impurities. Calculate the thermal equilibrium
hole concentrations.
Given: ni = 1.5 x 1010 /cm3 at 300K. [2 M]
IV. Consider a silicon semiconductor at absolute zero temperature which is doped with 3 ×
1010 /cm3 nitrogen atoms and 1 × 1010 /cm3 Al atoms. Calculate the thermal
equilibrium hole concentrations.
Given: ni = 1.5 x 1010 /cm3 at 300K. [2 M]

Q1v2.
I. Determine the probability that an energy level is empty of an electron if the state is above
the Fermi level (EF) kT. [2 M]

II. Fermi level (EF) is at 5 eV. Given kT = 0.0259 eV at room temperature. Also, given that
there is a 1% probability that a state at 4.741 eV will be empty of electrons.
Determine the temperature. [2 M]

III. Consider a silicon semiconductor at room temperature which is doped with 1018 /cm3
donor impurities and 1015 /cm3 acceptor impurities. Calculate the thermal equilibrium
hole concentrations.
Given: ni = 1.5 x 1010 /cm3 at 300K. [2 M]
IV. Consider a silicon semiconductor at absolute zero temperature which is doped with 2.5 ×
1010 /cm3 nitrogen atoms and 1 × 1010 /cm3 Al atoms. Calculate the thermal
equilibrium hole concentrations.
Given: ni = 1.5 x 1010 /cm3 at 300K. [2 M]
Q2v1.
I. A bar of Si, which is 0.2 cm long and 100 μm2 in cross-sectional area is doped with 1017
cm-3 phosphorus. Electron mobility of Si is 700 cm2/V-s whereas hole mobility is 200
cm2/V-s. Find the current at 300K with 10 V applied. Given q = 1.6 × 10-19 C. [2M]

II. In a Ge sample maintained under equilibrium conditions near room temperature, it is

known that ni = 1013 cm-3, n =2p, and NA = 0. Determine n and ND. [3M]

III. Two valance band is shown in the Figure 1. Which band will result in lighter hole
effective mass? Justify your answer. [2M]

Fig. 1. Valance band of two materials A and B.

IV. Consider The energy band diagrams shown below characterize a Silicon sample
maintained at 300 K. Sketch n and p inside the Si as a function of x. [2M]
Q3v1. For a step pn junction, Nd = 3×1015 cm-3 and Na = 1016 cm-3. Given, ni = 1.5×1010 cm-3,
Band-gap = 1.12 eV, q=1.6×10-19 C, kT = 0.0259 eV, ϵs = 11.7 × 8.85 × 10-14 F/cm. At
equilibrium, determine
(a) Value of built-in potential, [2M]
(b) Depletion extension in n-region (xn0) and in p-region (xpo), [3M]
(c) Calculate maximum electric field and Plot electric field vs. distance. [2M]
(d) Determine the magnitude of reverse bias voltage for which depletion capacitance is
reduced by 20% of its equilibrium value. [2M]

Q3v1. For a step pn junction, Nd = 1015 cm-3 and Na = 1016 cm-3. Given, ni = 1.5×1010 cm-3,
Band-gap = 1.12 eV, q=1.6×10-19 C, kT = 0.0259 eV, ϵs = 11.7 × 8.85 × 10-14 F/cm. At
equilibrium, determine
(a) Value of built-in potential, [2M]
(b) Depletion extension in n-region (xn0) and in p-region (xpo), [3M]
(c) Calculate maximum electric field and Plot electric field vs. distance. [2M]
(d) Determine the magnitude of reverse bias voltage for which depletion capacitance is
reduced by 40% of its equilibrium value. [2M]
Q4v1. A Si sample doped with phosphorous impurities with a doping concentration of 3 × 1017
cm-3. It has an electron affinity of qχ = 4.05 eV. A metallic contact of gold (qФm = 4.8 eV) is
made on it. Given, ni = 1.5×1010 cm-3, Band-gap = 1.12 eV, q=1.6×10-19 C, kT = 0.0259 eV.
a) Calculate the work function of Si. [3M]
b) Calculate the built-in potential (Vbi) if there is any. [2M]
c) Calculate the Schottky barrier height (ФB). [2M]
d) Now, assume fermi level at the surface of the semiconductor is pinned to 0.35 eV above
the valance band. Determine the Schottky barrier height. [2M]

Q4v2. A Si sample doped with phosphorous impurities with a doping concentration of 2 × 1017
cm-3. It has an electron affinity of χ = 4.05 eV. A metallic contact of gold (Фm = 4.8 eV) is made
on it. Given, ni = 1.5×1010 cm-3, Band-gap = 1.12 eV, q=1.6×10-19 C, kT = 0.0259 eV.
a) Calculate the work function of Si. [3M]
b) Calculate the built-in potential (Фi) if there is any. [2M]
c) Calculate the Schottky barrier height (ФB). [2M]
d) Now, assume fermi level at the surface of the semiconductor is pinned to 0.35 eV above
the valance band. Determine the Schottky barrier height. [2M]