Experiment No.
01:
Title: Determination of the characteristic curve of a Diode.
Objective:
The volt–ampere characteristics of a diode give the variation of diode current
with the voltage. This characteristic curve is essential to understand the behavior of a
diode when it is connected to circuit.
Theory:
It is the simplest of semiconductor devices but plays a very vital role in
electronic systems, having characteristics that closely match those of a simple switch.
The ideal diode is a two-terminal device formed from a junction of n-type and p-type
semiconductor material. The lead connected to the p-type material is called the anode
and the lead connected to the n-type material is the cathode. In general, the cathode of
a diode is marked by a solid line on the diode. It has low (ideally zero) resistance to
the flow of current in one direction, and high (ideally infinite) resistance in the other
direction.
A diode is made of a crystal of semiconductor, usually silicon, but germanium
and gallium arsenide are also used. Impurities are added to it to create a region on one
side that contains negative charge carriers (electrons), called an n-type semiconductor,
and a region on the other side that contains positive charge carriers (holes), called a p-
type semiconductor. P-type of semiconducting material is made by defusing impurity
of trivalent type of material in the pure form of semiconductor as shown below in
Figure 2(b). N-type semiconducting material is made by defusing impurity of
pentavalent type of material in the pure form of semiconductor as shown below in
Figure 2(c).
(a) (b) (c)
Figure-2: (a) Covalent bonding Silicon atom; (b) P-type semiconductor (Boron as
trivalent impurity); (c) N-type semiconductor (Antimony used as pentavalent
impurity).
When the n-type and p-type materials are attached together, a momentary flow
of electrons occur from the n to the p side resulting in a third region between the two
where no charge carriers are present. This region is called the depletion region
because there are no charge carriers (neither electrons nor holes) in it.
The diode's terminals are attached to the n-regions and p-regions. The
boundary between these two regions, called a p–n junction, is where the action of the
diode takes place.
When the diode is forward biased, due to the negative terminal on the n-side,
electrons from the n-side are pushed towards the p-region. Similarly, due to positive
voltage on the p-side of the diode, Holes from the p-region are pushed towards n-side.
Due to this the electrons will start converting the positive ions in the p-region into
neutral atoms and holes will start converting the negative ions in the n-region to
neutral atoms. Hence width of the depletion region starts reducing due to reduction in
the barrier potential. This keeps happening and at a certain point the depletion region
collapses and there is no opposition to the flow of current. Hence large number of
electrons and holes will cross the junction and make the current to flow from anode to
cathode. Hence, forward biased electrical resistance of diode is very small and hence
there is a small voltage drop (Practical condition, ideally there should be 0 forward
resistance) across it. Its value for silicon diode is about 0.7 V. Thus the p-n junction
diode will allow a current to pass through it only when it is forward biased.
When the diode is reversed biased the hole from the p-side will get attracted
towards the negative terminal of the supply and electrons from the n-side are attracted
towards the positive terminal. Hence the process of widening of the depletion region
takes place and hence more and more opposition to the flow of current takes place.
Hence, ideally the reverse biased resistance of the diode is infinite and no current
flows from the diode when it is reversed biased. Due to large reverse biased voltage,
suddenly large current will flow through the reverse biased voltage. Due to this large
power gets dissipated in the diode which may damage it permanently. In zero bias
condition no voltage is applied and no current flows through the diode. So the diode
remains in the cut-off region. Operation of diode can be summarized in form of I-V
diode characteristics graph.
Figure 3: Forward and Reverse Bias Condition of Diode.
Figure-4: I-V characteristics curve of Diode.
Circuit Diagram:
Figure: Circuit Diagram of the experiment.
Data Table for Diode characteristics:
VD (mV) VR (mV) ID =
VR/1KΩ
(mA)
0 0 0
200 173.15 0
300 288 0
400 332.5 0
500 438 0.02
600 503 0.09
700 526 0.17
800 545 0.25
900 558 0.33
1000 570 0.49
1100 579 0.50
Discussion:
Conclusion:
In conclusion, we accurately obtained the characteristic curve of a diode by
examining its voltage-current (V-I) relationship. The experiment demonstrated the diode’s
distinct forward conduction threshold and minimal reverse bias current, effectively
confirming its rectifying behavior as predicted by semiconductor theory. These findings
reinforce the fundamental understanding of diode operation, particularly in its role in
directing current flow in electronic circuits. for a couple of seconds
In conclusion, we accurately obtained the characteristic curve of a diode by examining its
voltage-current (V-I) relationship. The experiment clearly demonstrated that the diode
exhibits a distinct forward conduction threshold with a sharp increase in current beyond that
point, while maintaining minimal current in reverse bias, thus confirming its rectifying
behavior as predicted by semiconductor theory.
