Memory
Memory
Both static and dynamic RAMs are volatile; that is, power must be
continuously supplied to the memory to preserve the bit values.
A dynamic memory cell is simpler and smaller than a static memory cell.
A DRAM is more dense (smaller cells = more cells per unit area) and less
expensive than a corresponding SRAM.
A DRAM requires the supporting refresh circuitry. The fixed cost of the
refresh circuitry is more than compensated for by the smaller variable cost
of DRAM cells.
DRAMs tend to be favored for large memory requirements.
SRAMs are somewhat faster than DRAMs. Because of these relative
characteristics, SRAM is used for cache memory (both on and off chip), and
DRAM is used for main memory.
Flash Memory
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Flash memory is used both for internal memory and external memory
applications.
Like EEPROM, flash memory uses an electrical erasing technology. An entire
flash memory can be erased in one or a few seconds, which is much faster
than EPROM.
In addition, it is possible to erase just blocks of memory rather than an
entire chip.
Like EPROM, flash memory uses only one transistor per bit, and so achieves
the high density (compared with EEPROM) of EPROM.
There are two distinctive types of flash memory, designated as NOR and
NAND
Nonvolatile Solid-State Memory Technologies
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Seek Time
Rotational Latency
Transfer time
RAID
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RAID
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RAID
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RAID
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