ELTRNX1 – ELETRONIC DEVICES AND CIRCUITS

NAME: DATE PERFORMED:

GROUP NO.: INSTRUCTOR:

LABORATORY WORK NO. 1

DIODE CHARACTERISTICS
INTRODUCTION
A diode is a two-terminal electronic component that conducts current primarily in one
direction; it has low resistance in one direction, and high resistance in the other. It is also
referred as the PN-junction diode wich is formed when a p-type semiconductor is fused to an n-
type semiconductor creating a potential barrier voltage across the diode junction. It is one of the
simplest semiconductor devices around, and which has the characteristic of passing current in
only one direction only. However, unlike a resistor, a diode does not behave linearly with respect
to the applied voltage as the diode has an exponential current-voltage ( I-V ) relationship and
therefore we cannot be described its operation by simply using an equation such as Ohm’s law.
Forward bias operation.
The P-N junction supports uni-directional current flow. If +ve terminal of the input supply is
connected to Pside and –ve terminal is connected the n side, then diode is said to be forward
biased condition. In this condition the height of the potential barrier at the junction is lowered by
an amount equal to given forward biasing voltage. Both the holes from p-side and electrons from
n-side cross the junction simultaneously thereby decreasing the depleted region. This constitutes
a forward current (majority carrier movement – diffusion current). Assuming current flowing
through the diode to be very large, the diode can be approximated as shortcircuited switch.
Diode offers a very small resistance called forward resistance (few ohms).
Reverse bias operation.
If negative terminal of the input supply is connected to p-side and –ve terminal is
connected to n-side then the diode is said to be reverse biased. In this condition an amount
equal to reverse biasing voltage increases the height of the potential barrier at the junction. Both
the holes on P-side and electrons on N-side tend to move away from the junction there by
increasing the depleted region. However, the process cannot continue indefinitely, thus a small
current called reverse saturation current continues to flow in the diode. This current is negligible;
the diode can be approximated as an open circuited switch it offers a very high resistance called
reverse resistance (few Kilo ohms).
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the band on the diode package represents the cathode

Static Resistance: The opposition offered by a diode to the direct current flowing forward bias
condition is known as its DC forward resistance or Static Resistance. It is measured by taking the
ratio of DC voltage across the diode to the DC current flowing through it at an operating point
Dynamic Resistance: The opposition offered by a diode to the changing current flow I forward
bias condition is known as its AC Forward Resistance. It is measured by a ratio of change in
voltage across the diode to the resulting change in current through it for an operating point P.
Average Resistance: Same as dynamic resistance but measured between extremities.
Diode current equation: The volt-ampere characteristics of a diode explained by the
following equations:

Where:
I0 = reverse saturation current
V = voltage applied to the diode
VT = volt- equivalent of temperature = k T/q = T/ 11,600 = 26mV (@ room temp) =1 (for
Ge) and 2 (for Si)

The forward voltage at which the silicon diode starts allowing large electric current is
called cut-in voltage.

I. LEARNING OUTCOME
After completing this lab activity, the student will be able to:
1. study the characteristics of diodes.
 2. study the voltage – current characteristic of diodes.
 3. be able to simulate simple circuits.

II. EQUIPMENT/MATERIALS/RESOURCES
Desktop PC or Laptop with Windows OS
Simulator (MULTISIM)
CANVAS (LMS)
III. PROCEDURES and DATA and RESULTS
A. Forward Bias Region
1. Construct the circuit of Fig. 1.1 using the 1N4148 diode and a 1kΩ resistor in MULTISIM. Vary V1 from 0
to 10V in appropriate intervals to obtain enough data points to plot the Forward Bias V-I
Characteristic of the diode.
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2. Measure and record the voltages across the diode (VD) and resistor (VR), and calculate the current (ID) for
each data point. Record your data on the table below.

V1 (measured) VD (measured) VR (measured) ID (calculated)

NOTE: Take more data points at diode voltages between 0.4V and 0.7V volts for greater accuracy.
3. Draw Characteristic curve. ID as the y-axis and VD for the x-axis.
Characteristic Curve
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B. Reverse Bias Region

1. In order to measure the Reverse Bias V-I Characteristic of the diode, swap the direction or polarity of the
diode and replace R1 with a 1MΩ resistor as shown in Fig. 1-2. Sweep the power supply from 0 to
20V in increments of 2V. Record the voltage drops across D1 and R1, and calculate the current (ID)
for each data point. Use these measurements to plot the Reverse Bias V-I Characteristic of the
diode. NOTE: VD and ID values should be indicated as negative values for reverse bias.

V1 (measured) VD (measured) VR (measured) ID (calculated)

2. Draw characteristic curve.

3. Discuss briefly the forward and reverse bias region of a diode.
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Characteristic curve:

PART II: DIODE V-I CHARACTERISTICS (SWEEP METHOD)

1. The sweep method can be used to easily display the V-I characteristic of a diode using an oscilloscope.
Specialized instruments of this type are known as Curve Tracers. If a curve tracer is available, you
most certainly can use one for this part of the experiment.
2. Set up the circuit in Figure 1-3 then simulate the circuit.
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3. Draw the waveform shown from the oscilloscope.

Characteristic curve:

4. In the circuit of Figure 1-3, remove the 1N4004 diode and replace it with the 1N5231B, Zener diode.
Connect the cathode to point “A” and the anode to point “B”.
5. Draw the waveform.
Characteristic curve:
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6. How are the V-I characteristics for the 1N4004 and 1N5231B similar? How do they
differ? Can you explain why?

IV. Personal Reflection and Conclusion

 ELTRNX1 – ELETRONIC DEVICES AND CIRCUITS

V. QUESTIONS
1. Enumerate and discuss briefly the functions of the different diodes.
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RATING SHEET

Criterion 4-5 2-3.9 0-1.9 Score

Data collection Follows and Follows the Does not follow the
interprets the procedure and asks procedure and asks
procedure to collect questions to collect questions to collect
data data data
Data Presentation All data can be Some data are The data cannot be
(x2) easily understood hardly understood understood and
and interpreted and interpreted interpreted
Data accuracy Answers to Some answers to Most of the answers
questions for the the data gathered to the data gathered
data gathered are are inaccurate are inaccurate
accurate
Conclusion/Personal Conclusion/Personal Conclusion/Personal Conclusion/Personal
Reflection Reflection answered Reflection answered Reflection answered
the objectives the some of the not related to the
completely objectives objectives
Answers to Answers to Some answers to Most answers to
Questions questions are questions are questions are not
correct correct correct

References:
Boylestad, R. L., & Nashelsky, L. (2013). Electronic devices and circuit theory. Pearson.