Assign 1 Ans
Assign 1 Ans
to the shoyt-civcuit.
Short ideal
diode
rent
Curre (I ) = 50 nA
x 10-23 0. 025
KT .3 I0
1
293
I. 6 X 10
Hence,
Vo /n VT
1)
I = Is (e
= 50 (e
0,6/0 02 5 1)
= 324 X 1o'2 nA
. The currentHlows in sa medirection itha
m agnitude of1, 3 24 10'nA.
3) Determine the DC res iełance level for the diode
shoun in Figure 1 at I
) I = 2 mA
îi ) Io = 20 mA
20 -—
iif Vo = Io
S0lu tion: 0-
i) henI ▇ m A,
Vo = 0. 5 VC from fig ure) 1 0.15 0 s
vo
uA
NOw,
I R = Vo
i, Ro = - 230.
li) When Io = 20 mA,
o = '0 7v
RD Vo 0. 7 = 35
Io 20 x 10-3
ii) Vo = - 10
Io = –1 A
R. =Vo o l0 7
I0
Lo
4) Determine the current I for each of the configur-
of Fig 2 and 3 using the
approximate equi-
valent model for the diode,
a) Here,
1094
Applying KVL,
_0.7+20 - IX 20 : 0
Or, 20.7
01, 1.035A
b) Here,
Si
Given the diodes are in
Or I = 10
10
5)0e termine Hhe level of Vo for gf ven net 0rk of
fg
20V
2 K
N
Solułíon: 6i G e
2K
for 6ilicon diode V6 = 0, 7V
for ger manium diode , V = O.3
Now , using kircho ff's volłage law,
20 0. 7 + (). 3 + Ix 2 K . Tx 2KS =0
or, K x I =1
. I = 4 . 75 m A
Th US
V = I 2k
= 75▇ k▇
= I. 5 v
fig -IOV
1 ,2KJ
NN
o2
Sol fiO n 2 S
No 3.3K
lying KVL,
1 O + 0. + 0, 3 +C1. 2 + 3.3) ) =()
y, . 5 I =-11
,I = * -2, 4 m
Th U 9,
V 10 + O + 0. 3) -11V
V = 16V - 0.7V - 0. 7 V
. 6V Si
Si
Bn. 6 - I X 4. - 12 = 0 V
O1, 2. 4. L . K
0r, T= 0.5 5 31 m A
12 V
9) Deter min e the Vo and Io for th e gi ven neł 0rk:
Solutión
The circuit can be redra n a5; 1. Si
iK S
0. 7, 2K
V + I0V e
(2K K
*
I0 v
N
2K
For Io,
0 – 0. - ( 12)– I ▇ =0
or, 9. 3 - 3 Io
* Io = 3.Im A
(Now
Vo = Io X2
= 3.| 2
= 6 2V
D
cal 7
ide
V;
diodes V
2. kn .2k
.2K
100
S lotion:
During posi tive cycle, t= to =t/2
D1 1s reverse bi ased
D.
12 is fo r rd biased
Leł 1 o0sin
D, is reverse bi sed
V = 50 sin t
Th e o the net oYk is SKeched b el o
50 sin
5V
At t= 0 to t t/2
; = 20v
the diode re vei e based ie I 0
= 0
At to
We get,
Design
7t
a) Pz = Vz Tz + 220 T— z
, Iz = 00 X 3
20 Vz 1O▇ R
0 PL— =400mW
max
. T z - 0. 0 A
W e ha ve V z = V z 1Ov
ThuSS
V = I RL
, I 10 O,05 5A
80
LR = LL+ Lz
0. 0 + 0., 0 55
0.0 95
b) for R = 4 0 S
z - =(OV
No ,
V - L R
:
o *= IL
O, I , O.0 2 2
Iz + IL
.04 + 0. 021 2
O. 06 12 A
, 0 - ILmin .R m a)c
For I
2 - I x 2 2O~ O =O
or, T x 220 = I0
. IR .0 4 5 4 S A
Kno ,
Ir = I2 m + I m in
P = I. V
Z ma. .
*2 mo z ma
-3
o, Iz ma Ho0 10-
| 0
0
Lzm6% =0. 0 F
Hen Ce
LR Izm ax - L m fn
, I min = 0. 0 6 – 0,04
C I min = 0.00 5 s
(Putting value of I r
in eo
10
R m 0.
= 19 34 , s6
0 06 s
of RL for zene
d) For deter m in ing the inim U m v lu e
dio de to be "ON' the current thrO gh ze ner diode
T2 ) Sho be minimum1.e IZnmin =SmA CStan dard
va|ue) and cuIren# tht ugh load res ean Le CL shou ld
be md im um fo rm inim um value of RL
e have IR = 0.0 4 5 s
(No ,
L ma = 0. 4S 5 - 0. 0 s
0. 0 04SA
VL = I mar. R min
0
Or,
, 04 4S
RL min
..
R m in = 250
14) Determine the voltage available from the voltage
of
oubled of fig, if the secondary voltage
the trans formey 19 120v Cyms)
_ Solution:
Given,
= 12042 V
Thus,
4.31 - 6. 3 V
_ Solution:
Vi
-6