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The document discusses the characteristics of ideal diodes, explaining their behavior in forward and reverse bias states, and how they can be modeled as short-circuits and open-circuits. It also includes calculations for diode current, resistance levels, and voltage in various circuit configurations involving silicon and germanium diodes. Additionally, it covers design aspects for clamping circuits and Zener diode conditions for operation.

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0% found this document useful (0 votes)
16 views13 pages

Assign 1 Ans

The document discusses the characteristics of ideal diodes, explaining their behavior in forward and reverse bias states, and how they can be modeled as short-circuits and open-circuits. It also includes calculations for diode current, resistance levels, and voltage in various circuit configurations involving silicon and germanium diodes. Additionally, it covers design aspects for clamping circuits and Zener diode conditions for operation.

Uploaded by

akitsuakan3
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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1)

Describe in your own words the characteristics of the

ideal diode and how they determine the'on and 'off'


States of the device. That is describe why shovt-cincit
and open-circuit equivalents are appropriate
A Solution:

not offer any reeiotance to


the
An ideal diode does
biased
flow of cutrent through it when it is in forward
mode, This means that the ideal diode will be a perfect

conductor when forward biased. An ideal diode can provide


an infinite amount of current, This is because, te

kNOw from Ohm's law, I= V/R from the firet property,


i.e. I= Since the ideal diode has no depletion

region itself hence these diode requires zero thresold


diode makes them conduct
voltage This property of the
right at the instant of being biased
(when the diode is forward biased the ideal diode offers
resistance and allows the flow of cowent through
it. This chavacteristics of the ideal diode is equivalent

to the shoyt-civcuit.

Short ideal
diode

when the diode iS reverse biased, the ideal diode

offers maxcimume resistance and allows no flow of


the
current through the diode This is equivalent to
(2)0etermine the diode currentat 20% for silicon diode
ith I * 50nA and an a pplied fo r ard bias of 0 6 V.
Solutíon:

rent
Curre (I ) = 50 nA

Forward bias voltag C o) = 0. 6


Thermal VoHłage ( ) =?
Abs0 lute temperature T ) = 273 20 = 293
Magni tude of elechic charge Cq) = 1.6 xlo 19
Nw,

x 10-23 0. 025
KT .3 I0
1
293
I. 6 X 10

Hence,
Vo /n VT
1)
I = Is (e

= 50 (e
0,6/0 02 5 1)

= 324 X 1o'2 nA
. The currentHlows in sa medirection itha
m agnitude of1, 3 24 10'nA.
3) Determine the DC res iełance level for the diode
shoun in Figure 1 at I

) I = 2 mA
îi ) Io = 20 mA
20 -—
iif Vo = Io

S0lu tion: 0-

i) henI ▇ m A,
Vo = 0. 5 VC from fig ure) 1 0.15 0 s
vo
uA
NOw,
I R = Vo

i, Ro = - 230.
li) When Io = 20 mA,

o = '0 7v
RD Vo 0. 7 = 35
Io 20 x 10-3
ii) Vo = - 10
Io = –1 A
R. =Vo o l0 7
I0
Lo
4) Determine the current I for each of the configur-
of Fig 2 and 3 using the
approximate equi-
valent model for the diode,

a) Here,

the diode D1 is fowward biased 210.1


4 01
So, the equivalent model for
the diode tot is : -

1094

Applying KVL,
_0.7+20 - IX 20 : 0

Or, 20.7

01, 1.035A

b) Here,
Si
Given the diodes are in

opposite direction with respect


to each other. One is forward
biased while the other 19 eve se biased Dve to
this we obtain no recullant voltage as they cancel
each o ther. The equivalent circuit model is:
Using Ohm's Law,
V= IR

Or I = 10
10
5)0e termine Hhe level of Vo for gf ven net 0rk of

fg
20V
2 K
N
Solułíon: 6i G e
2K
for 6ilicon diode V6 = 0, 7V
for ger manium diode , V = O.3
Now , using kircho ff's volłage law,
20 0. 7 + (). 3 + Ix 2 K . Tx 2KS =0

or, K x I =1
. I = 4 . 75 m A

Th US
V = I 2k

= 75▇ k▇
= I. 5 v

6) De term ineth e Voand I.o for th e 9iven net rk


of fr9 Lo
Vo
So lution :

Kirchoff's 1 lomA 2.2K2 1. 2 k


Ap ly ing Nolłag e law,
|2.2 CI0 -Io) +0, v+Lo X |. 2k - 0
, 2 2 – 2.2Io +0. F + 2 Io =0
0, 22 .7= I
, Io = 2 2.F m A
ThueU

Vo = Lo X |2K 2 = 22.F 1.2= 2 ▇ ▇


7) Determine the Vo1 and . fo
*OY he nef 0rk of

fig -IOV
1 ,2KJ
NN
o2
Sol fiO n 2 S
No 3.3K

lying KVL,
1 O + 0. + 0, 3 +C1. 2 + 3.3) ) =()
y, . 5 I =-11
,I = * -2, 4 m

Th U 9,
V 10 + O + 0. 3) -11V

Vo 2 - I x 3.3 K 2 = - 2., 44 X 3.3 =-2·06 V


2

8 ) D eYr m in e th 6 Vo and Tfo r Hhe


net or K of Fig :
16 V
Gol tio :

V = 16V - 0.7V - 0. 7 V
. 6V Si
Si

Bn. 6 - I X 4. - 12 = 0 V

O1, 2. 4. L . K

0r, T= 0.5 5 31 m A
12 V
9) Deter min e the Vo and Io for th e gi ven neł 0rk:
Solutión
The circuit can be redra n a5; 1. Si
iK S

0. 7, 2K
V + I0V e
(2K K
*
I0 v
N
2K

For Io,

0 – 0. - ( 12)– I ▇ =0
or, 9. 3 - 3 Io
* Io = 3.Im A

(Now
Vo = Io X2

= 3.| 2
= 6 2V

10) SKetch Vo for the netl0rk of fig end determine the


dc voltag e ov ailable,
| 0 V

D
cal 7
ide
V;
diodes V

2. kn .2k
.2K
100

S lotion:
During posi tive cycle, t= to =t/2
D1 1s reverse bi ased
D.
12 is fo r rd biased
Leł 1 o0sin

The circoit no becom es:


zz

= 100sin t 2.2 _ 5os n t


2. 2 2. 2

During negaHive cycle, t= t2 to =


D is for a1d biased

D, is reverse bi sed
V = 50 sin t
Th e o the net oYk is SKeched b el o

50 sin

11 De fer m in e+h e VoFor the net rk of fig fo r the


input S ho n.
vi 2vTdea!
20 v

5V

At t= 0 to t t/2
; = 20v
the diode re vei e based ie I 0
= 0

At to

the diode acts as forward biased


-5+2% - Vo +0.9 26

We get,

12) Design a clamper to perform the function indicated


in figure
Vo
Ideal diode

Design
7t

can observe that the waveform is


moving
Upward the diode direction will be up
We can also notice that the -20V diops -10 v. Therefove
we need to integate reverse biasing in the circuit.

Hence the design looks D9:


V; 20V 10V =
R= V.

13) a. Dete rmine V , I ,Iz an d IR for the net ork


of fig if RL = 190
6) Repeal part a) if RL z470
)mDetermi
im m
ne the va lue of Ru tał il|esłablish
o e
condití ons for th e
Zen ey díode
d) 0ete rmi ne the mini mum value of
H at RL to en Sure
the zeney diode i in Hh e "ON sale
Solu tion: I
S
0 A

a) Pz = Vz Tz + 220 T— z

, Iz = 00 X 3
20 Vz 1O▇ R

0 PL— =400mW
max
. T z - 0. 0 A
W e ha ve V z = V z 1Ov
ThuSS

V = I RL
, I 10 O,05 5A
80

LR = LL+ Lz
0. 0 + 0., 0 55
0.0 95
b) for R = 4 0 S

z - =(OV
No ,
V - L R
:

o *= IL

O, I , O.0 2 2

Sin ce, the zener Jiode 19 akenid ea ▇


I 2 - O.0 A

Iz + IL
.04 + 0. 021 2

O. 06 12 A

() For ma c im Um ower condit on, ▇ e cor ent through


zen er diode CI2) should be m a c im um ndcur en

h ro ghload rests tance (I) 6 ho vld be minim um for


M xim m valu of RL.
So, V = I RL
0, V - I x R
m in m C

, 0 - ILmin .R m a)c
For I
2 - I x 2 2O~ O =O
or, T x 220 = I0
. IR .0 4 5 4 S A
Kno ,

Ir = I2 m + I m in
P = I. V
Z ma. .
*2 mo z ma
-3

o, Iz ma Ho0 10-
| 0

0
Lzm6% =0. 0 F

Hen Ce

LR Izm ax - L m fn
, I min = 0. 0 6 – 0,04
C I min = 0.00 5 s
(Putting value of I r
in eo
10
R m 0.
= 19 34 , s6
0 06 s

of RL for zene
d) For deter m in ing the inim U m v lu e
dio de to be "ON' the current thrO gh ze ner diode
T2 ) Sho be minimum1.e IZnmin =SmA CStan dard
va|ue) and cuIren# tht ugh load res ean Le CL shou ld
be md im um fo rm inim um value of RL

e have IR = 0.0 4 5 s
(No ,
L ma = 0. 4S 5 - 0. 0 s
0. 0 04SA

VL = I mar. R min
0
Or,
, 04 4S
RL min
..
R m in = 250
14) Determine the voltage available from the voltage
of
oubled of fig, if the secondary voltage
the trans formey 19 120v Cyms)

_ Solution:

Given,

= 12042 V

Thus,

V, - 12012 =16 9.70V

V2 22 V m = 2* 1201 2 = 339 .41 V

15 Sketch in and V. for the circuit shown in fig:


+
O-
+
S:

4.31 - 6. 3 V

_ Solution:
Vi

-6

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