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ckts-1 Assignment

The document outlines an assignment with various tasks related to the operation and analysis of JFETs and MOSFETs, including their transfer characteristics and circuit parameters. It requires calculations of drain current, bias points, and amplifier parameters for specified circuits. Additionally, it involves designing a voltage-divider bias network and determining specific circuit values based on given specifications.

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kalidmuktar13
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22 views4 pages

ckts-1 Assignment

The document outlines an assignment with various tasks related to the operation and analysis of JFETs and MOSFETs, including their transfer characteristics and circuit parameters. It requires calculations of drain current, bias points, and amplifier parameters for specified circuits. Additionally, it involves designing a voltage-divider bias network and determining specific circuit values based on given specifications.

Uploaded by

kalidmuktar13
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
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Assignment #1 (Due Date: 07/03/2022)

1. Explain the basic operation of a JFET and MOSFET


2. Explain the JFET and MOSFET (both depletion and enhancement type MOSFET)
universal transfer characteristic
 Calculate the drain current using the transfer characteristic equation
3. Compute the parameters
( I B, I C, I E and V CE )
of this circuits ( β=100 )
assume BJTs are in cut-off and
forward active region.

4. Find the bias point and AC amplifier


parameters of this circuit
(Manufacturers’ spec sheets give:
h fe=200 , hie =5 k Ω , h oe=10 μ S )

5. Find the bias point and AC


amplifier parameters of this circuit
(Manufacturers' spec sheets give:
β=200 , r π=5 k Ω , r o =100 k Ω ).

1
6. Determine I D and V GS for the JFET with voltage-divider bias in Figure 1, given that
for this particular JFET the parameter values are such that V D=7 V .

Figure 1.
7. Determine the approximate Q-point for the JFET with voltage-divider bias in
Figure 2(a), given that this particular device has a transfer characteristic curve as
shown in Figure 2(b).

Figure 2
8. Determine V GS and V DS for the E-MOSFET circuit in Figure 3. Assume this particular
MOSFET has minimum values of I D (on)=200 mA at V GS=4 V and V GS (th) =2V .

2
Figure 3
9. Determine the drain-to-source voltage in the circuit of Figure 4. The MOSFET
datasheet gives V GS (off )=−8 V and I DSS=12 mA .

Figure 4

10. Given the information appearing in Fig. below determine:


(a) IC.
(b) VE.
(c) VCC.
(d) VCE.
(e) VB.
(f) R1.

3
11. Design a voltage-divider
bias network using a supply
of 24 V, a transistor with a
beta of 110, and an operating
point of ICQ = 4 mA and VCEQ
=8 V. Choose VE =1/8 VCC.
Use standard values.

12. For the network of Fig. below, determine:


(a) VG.
(b) IDQ and VGSQ.
(c) VD and VS.
(d) VDSQ

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