7.

M O S FET Characteristics in CS Configuration

Aim:
1. To plot a family of drain and transfer characteristics of a given FET.

2. To find the FET parameters drain resistance (rd), amplification factor (μ), and
transconductance (gm) of the given FET.

Apparatus Required:

NAME RANGE TYPE QUANTITY

REGULATED POWER SUPPLY 0 – 15 V 2
(RPS)
AMMETER 0 – 20 mA 1
0 – 200 µA
VOLTMETER 0 – 20 V 1
FIELD EFFECT TRANSISTOR BFW11 1
(FET)
RESISTORS 100KΩ 1
680Ω 1
BREADBOARD 1
CONNECTING WIRES SUFFICIENT

Circuit Diagram:-

BEEE Lab. Manual, J B Institute of Engineering & Technology 43

Theory:
An FET is a three terminal device, having the characteristics of high input
impedance and less noise, the Gate to Source junction of the FET s always
reverse biased. In response to small applied voltage from drain to source, the n -
type bar acts as sample resistor, and the drain current increases linearly with
VDS. With increase in ID the ohmic voltage drop between the source and the
channel region reverse biases the junction and the conducting position of the
channel begins to remain constant. The VDS at this instant is called “pinch of
voltage”. If the gate to source voltage (V GS) is applied in the direction to provide
additional reverse bias, the pinch off voltage ill is decreased.
In amplifier application, the FET is always used in the region beyond the pinch-
off. The current equation is given by
I D = I DSS(1− V GS/V P)2

Procedure:
To obtain drain characteristics:
1. All the connections are made as per the circuit diagram.
2. To plot the drain characteristics, keep V GS constant at 0V (VGS can be set 0V by
short circuiting the terminals of input power supply).
3. Vary the drain voltage (VDD) and observe the values of source voltage (V DS) and
drain current ID) and note down values in convenient steps.
4. Repeat the above step 3 for different values of VGS at -1V and -2V.
5. All the readings are tabulated and plot the graph V DS verses ID for a constant
VGS.

To obtain transfer characteristics:

6. To plot the transfer characteristics, keep VDS constant at 0.5 V.
7. Vary the gate voltage (VGG) and observe the values of gate source voltage (VGS)
and drain current (ID) and note down values in convenient steps.
8. Repeat step 7 for different values of VDS at 1 V and 1.5 V.
9. The readings are tabulated and plot the graph VGS verses ID for a constant
VDS.
10. From drain characteristics, calculate the values of dynamic resistance (r d) by
using the formula
∇ V DS
r =
d ∇ ID

BEEE Lab. Manual, J B Institute of Engineering & Technology 44

 11. From transfer characteristics, calculate the value of trans conductace (g m) By
using the formula
∇ ID
gm=
∇ VDS
∇ V DS
12. Amplification factor μ = dynamic resistance. Tranconductance μ=
∇ V GS

Model Graph:
Drain ctaracteristic

BEEE Lab. Manual, J B Institute of Engineering & Technology 45

Transfer characteristic

Observations:
Drain characteristics:

Sl. No VGS=0V VGS=-1V VGS=-2V

VDS(V) ID(mA) VDS(V) ID(mA) VDS(V) ID(mA)

Transfer characteristics:

Sl. No VDS=0.5V VDS=1.0V VDS=1.5V

VGS(V) ID(mA) VGS(V) ID(mA) VGS(V) ID(mA)

BEEE Lab. Manual, J B Institute of Engineering & Technology 46

 Calculations:
At a suitable operating point, the parameters are calculated as follows:
VDS
r= with V as constant =
1. Drain resistance, d
GS
I DS
I DS
g= with V as constant =
2. Trans-conductance, m DS
V DS
∇ V DS
3. Amplification factor, μ= with I D as constant =
∇ V
GS

These parameters are related by the equation μ= r d gm

Precautions:
1. The three terminals of the FET must be care fully identified
2. Practically FET contains four terminals, which are called source, drain,
Gate, substrate.
3. Source and case should be short circuited.
4. Voltages exceeding the ratings of the FET should not be applied.
Result :
1. The drain and transfer characteristics of a given FET are drawn
2. The dynamic resistance (rd), amplification factor (μ) and
Transconductance (g m) of the given FET are calculated.
VIVA QUESTIONS:
1. What are the advantages of FET?
2. Different between FET and BJT?
3. Explain different regions of V-I characteristics of FET?
4. What are the applications of FET?
5. What are the types of FET?
6. Draw the symbol of FET.
7. What are the disadvantages of FET?
8. What are the parameters of FET?

BEEE Lab. Manual, J B Institute of Engineering & Technology 47

 8. M O S FET Characteristics in CD Configuration
Aim:
1. To plot a family of drain and transfer characteristics of a given FET.

2. To find the FET parameters drain resistance (rd), amplification factor (μ), and
transconductance (gm) of the given FET.

Apparatus Required:

NAME RANGE TYPE QUANTITY

REGULATED POWER SUPPLY 0 – 15 V 2
(RPS)
AMMETER 0 – 20 mA 1
0 – 200 µA
VOLTMETER 0 – 20 V 1
FIELD EFFECT TRANSISTOR BFW11 1
(FET)
RESISTORS 100KΩ 1
680Ω 1
BREADBOARD 1
CONNECTING WIRES SUFFICIENT

Circuit Diagram:-

BEE Lab. Manual, J B Institute of Engineering & Technology

Theory:
An FET is a three terminal device, having the characteristics of high input
impedance and less noise, the Gate to Source junction of the FET s always
reverse biased. In response to small applied voltage from drain to source, the n-
type bar acts as sample resistor, and the drain current increases linearly with
VDS. With increase in ID the ohmic voltage drop between the source and the
channel region reverse biases the junction and the conducting position of the
channel begins to remain constant. The VDS at this instant is called “pinch of
voltage”. If the gate to source voltage (V GS) is applied in the direction to provide
additional reverse bias, the pinch off voltage ill is decreased.
In amplifier application, the FET is always used in the region beyond the pinch-
off. The current equation is given by
I D = I DSS(1− V GS/V P)2

Procedure:
To obtain drain characteristics:
13. All the connections are made as per the circuit diagram.
14. To plot the drain characteristics, keep V GS constant at 0V (VGS can be set
0V by short circuiting the terminals of input power supply).
15. Vary the drain voltage (VDD) and observe the values of source voltage (V DS)
and drain current ID) and note down values in convenient steps.
16. Repeat the above step 3 for different values of VGS at -1V and -2V.
17. All the readings are tabulated and plot the graph V DS verses ID for a
constant VGS.

To obtain transfer characteristics:

18. To plot the transfer characteristics, keep VDS constant at 0.5 V.
19. Vary the gate voltage (VGG) and observe the values of gate source voltage
(VGS) and drain current (ID) and note down values in convenient steps.
20. Repeat step 7 for different values of VDS at 1 V and 1.5 V.
21. The readings are tabulated and plot the graph VGS verses ID for a
constant VDS.
22. From drain characteristics, calculate the values of dynamic resistance (r d) by
using the formula
∇ V DS
r =
d ∇ ID

BEE Lab. Manual, J B Institute of Engineering & Technology

 23. From transfer characteristics, calculate the value of trans conductace (g m) By
using the formula
∇ ID
gm=
∇ VDS
∇ V DS
24. Amplification factor μ = dynamic resistance. Tranconductance μ=
∇ V GS

Model Graph:
Drain ctaracteristic

BEE Lab. Manual, J B Institute of Engineering & Technology

Transfer characteristic

Observations:
Drain characteristics:

Sl. No VGS=0V VGS=-1V VGS=-2V

VDS(V) ID(mA) VDS(V) ID(mA) VDS(V) ID(mA)

Transfer characteristics:

Sl. No VDS=0.5V VDS=1.0V VDS=1.5V

VGS(V) ID(mA) VGS(V) ID(mA) VGS(V) ID(mA)

BEE Lab. Manual, J B Institute of Engineering & Technology

 Calculations:
At a suitable operating point, the parameters are calculated as follows:
VDS
r= with V as constant =
4. Drain resistance, d
GS
I DS
I DS
g= with V as constant =
5. Trans-conductance, m DS
V DS
∇ V DS
6. Amplification factor, μ= with I D as constant =
∇ V
GS

These parameters are related by the equation μ= r d gm

Precautions:
1. The three terminals of the FET must be care fully identified
2. Practically FET contains four terminals, which are called source, drain,
Gate, substrate.
3. Source and case should be short circuited.
4. Voltages exceeding the ratings of the FET should not be applied.
Result :
1. The drain and transfer characteristics of a given FET are drawn
2. The dynamic resistance (rd), amplification factor (μ) and
Transconductance (g m) of the given FET are calculated.
VIVA QUESTIONS:
1. What are the advantages of FET?
2. Different between FET and BJT?
3. Explain different regions of V-I characteristics of FET?
4. What are the applications of FET?
5. What are the types of FET?
6. Draw the symbol of FET.
7. What are the disadvantages of FET?
8. What are the parameters of FET?

BEE Lab. Manual, J B Institute of Engineering & Technology