Ec3361 Edc Lab
Ec3361 Edc Lab
AND TECHNOLOGY
VASUDEVANALLUR-627 758.
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MAHAKAVI BHARATHIYAR COLLEGE OF
ENGINEERING AND TECHNOLOGY
VASUDEVANALLUR- 627 758.
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BONAFIDE CERTIFICATE
Certified that this record is the bonafide record work of the above Student in the
EC3361Electronic Devices and Circuits Laboratory during the academic year 2024-2025.
CIRCUIT DIAGRAM:
FORWARD BIAS
REVERSE BIAS
EX.NO:1(A) Characteristics of PN Junction diode
DATE:
AIM:
To plot the Volt Ampere characteristics of PN junction diode under forward and reverse
bias condition and to find the cut-in voltage, static resistance, dynamic resistance under forward
and reverse bias.
APPARATUS REQUIRED:
SI.NO
COMPONENTS/ EQUIPMENTS SPECIFICATIONS QUANTITY
1. Diode-PN IN4007 1
2. Resistors 1KΩ 1
3. Dual Regulated Power Supply (0-30)V 1
MC(0-1)V 1
4. Voltmeters
MC(0-15)V 1
MC(0- 1
5. Ammeters
500)µAMC(0- 1
20)mA
6. Breadboard 1
7. Connecting Wires Few
THEORY:
The semi conductor diode / PN junction diode is created by simply joining an n-type and a p-type
material together nothing more just the joining of one material with a majority carrier of
electrons to one with a majority carrier of holes.
The P-N junction supports uni-directional current flow. If +ve terminal of the input supply is
connected to anode (P-side) and–ve terminal of the input supply is connected to cathode (N-side),
then diode is said to be forward biased.
TABULATION
FORWARD BIAS REVERSE BIAS
VF IF(mA) VR IR(µA)
(Volts) (Volts)
MODEL GRAPH
In this condition the height of the potential barrier at the junction is lowered by an amount equal
to given forward biasing voltage. Both the holes from p-side and electrons from n-side cross the
junction simultaneously and constitute a forward current (injected minority current – due to holes
crossing the junction and entering N-side of the diode, due to electrons crossing the junction and
entering P-side of the diode). Assuming current flowing through the diode to be very large, the diode
can be approximated as short-circuited switch.
If –ve terminal of the input supply is connected to anode (p-side) and +ve terminal of the
input supply is connected to cathode (n-side) then the diode is said to be reverse biased.
In this condition an amount equal to reverse biasing voltage increases the height of the
potential barrier at the junction. Both the holes on p-side and electrons on n-side tend to move away
from the junction thereby increasing the depleted region. However the process cannot continue
indefinitely, thus a small current called reverse saturation current continues to flow in the diode. This
small current is due to thermally generated carriers. Assuming current flowing through the diode to
be negligible, the diode can be approximated as an open circuited switch.
𝐼=𝐼0(𝑒ƞ𝑉𝑇−1)
I – Current flowing in the diode
I0–Reversesaturationcurrent
𝑉
Static forward resistance𝑅𝑆 = 𝐹Ω at Q point
𝐼𝐹
𝐷 𝑉
Dynamic Resistance𝑅𝐷 = Ω at Q point
𝐼𝐷
PROCEDURE FORWARD BIAS
REVERSE BIAS
RESULT
FORWARD BIAS
REVERSE BIAS
EXPERIMENT NO:1 (B) CHARACTERISTICS OF ZENER DIODE
DATE:
AIM:
To plot the Volt-Ampere characteristics of Zener Diode in reverse bias condition and
to find the Break down voltage in reverse bias condition.
APPARATUS REQUIRED:
1. Diode-Zener FZ3.2 1
2. Resistors 1KΩ 1
3. Dual Regulated Power Supply (0-30)V 1
MC(0-1)V 1
4. Voltmeters
MC(0-10)V 1
5. Ammeters MC(0- 1
20)mAMC(0
-20)µA
6. Breadboard 1
7. Connecting Wires Few
THEORY:
Zener diodes have many of the same basic properties of ordinary semiconductor diodes.
When forward biased, they conduct in the forward direction and have the same turn on voltage as
ordinary diodes. For silicon this is about 0.6 volts.
In the reverse direction, the operation of a Zener diode is quite different to an ordinary diode.
For low voltages the diodes do not conduct as would be expected. However, once a certain
voltage is reached the diode "breaks down" and current flows. Looking at the curves for a Zener
diode, it can be seen that the voltage is almost constant regardless of the current carried. This
means that a Zener diode provides a stable and known reference voltage.
TABULATION
FORWARD BIAS REVERSE BIAS
VF IF(mA) VR IR(mA)
(Volts) (Volts)
MODEL GRAPH
PROCEDURE:
FORWARD BIAS:
REVERSE BIAS:
1. The connections are made as per the circuit diagram.
2. The positive terminal of power supply is connected to cathode of the diode and
negative terminal to anode of the diode.
3. Reverse voltage VR across the diode is increased in small steps and the Reverse
current is noted.
4. The readings are tabulated. A graph is drawn between VR and IR.
RESULT:
Thus the characteristics of Zener diode were plotted and the Zener breakdown voltage
was determined and is given as V.
FULL WAVE RECTIFIER WITHOUT FILTER
APPARATUS REQUIRED:
COMPONENTS /
Sl.No SPECIFICATIONS QUANTITY
EQUIPMENTS
1. Transformer 230V/(12-0-12)V 1
2. Diode 1N4007 2
1000µF,16V 1
3. Capacitors
470µF/25V 1
4. Resistor 10KΩ 1
5. Decade resistance box - 1
6. Dual Trace CRO 20MHz 1
7. Multimeter 1
8. Breadboard 1
9. Connecting Wires Few
THEORY
FULL WAVE RECTIFIER
Full wave rectifier utilizes both the cycle of input AC voltage. Two or four diodes are
used in full wave rectifier. If full wave rectifier is designed using four diodes it is known as
full wave bridge rectifier. Full wave rectifier using two diodes without capacitor is shown in
the figure. Center tapped transformer is used in this full wave rectifier. During the positive
cycle diode D1 conducts and it is available at the output. During negative cycle diode D1
remains OFF but diode D2 is in forward bias hence it conducts and negative cycle is available
as a positive cycle at the output. Note that direction of current in the load resistance is same
during both the cycles hence output is only positive cycles.
MODEL GRAPH
Ripple Factor
O/P Voltage(Vo)
Load
ResistanceRL (Ω) 𝑽
Vac(V) Vdc(V) = 𝑽𝒂𝒄
𝒅𝒄
Advantages of full wave rectifier over half wave rectifier:
Disadvantages:
PROCEDURE
FULL WAVE RECTIFIER
WITHOUT FILTER:
1. Connecting the circuit on bread board as per the circuit diagram.
2. Connect the primary of the transformer to main supply i.e. 230V,50Hz
3. Connect the decade resistance box and set the RL value to 100Ω
4. Connect the Multimeter at output terminals and vary the load resistance (DRB) from
100Ω to1KΩ and note down the Vac and Vdc as per given tabular form
5. Disconnect load resistance (DRB) and note down no load voltage Vdc (Vno load)
6. Connect load resistance at 1kΩ and connect Channel – II of CRO at output terminals
and CH – I of CRO at Secondary Input terminals observe and note down the Input and
Output Waveform on Graph Sheet.
7. Calculate ripple factor𝛾=𝑉𝑎𝑐/𝑉𝑑𝑐
𝑉𝑛𝑜𝑙𝑜𝑎𝑑 −𝑉𝑓𝑢𝑙𝑙𝑙𝑜𝑎𝑑
8. Calculate Percentage of Regulation,%ƞ= x100 %
𝑉𝑛𝑜𝑙𝑜𝑎𝑑
WITHCAPACITORFILTER:
1. Connecting the circuit as per the circuit Diagram and repeat the above procedure from
steps 2 to 8.
WITH FILTER
No load Voltage(Vdc)=V
Ripple Factor
O/P Voltage(Vo)
Load
Resistance Vac(V) Vdc(V) 𝑽
= 𝑽𝒂𝒄
RL (Ω) 𝒅𝒄
CALCULATIONS:
FULL WAVE RECTIFIER
Without filter
RF=Forward resistance of diode=30Ω
RL=Load Resistance
𝑉 𝑅
𝑉𝑑𝑐= 𝑚 𝐿
𝜋(𝑅+𝑅)
𝐹 𝐿
𝑉𝑚𝑅𝐿
𝑉𝑟𝑚𝑠=
2(𝑅 𝐹+ 𝑅𝐿)
1
2 2 /2
(𝑉𝑟𝑚𝑠−𝑉𝑑𝑐 )
Ripple factor,𝑟=
𝑉𝑑𝑐
𝑉𝑚
Average load voltage at no load =
𝜋
𝑉 𝑚𝑅 𝐿
Average load voltage at full load(𝑉𝐹𝐿 )=
2(𝑅𝐹+𝑅𝐿)
Withfilter
F=50Hz
𝑉𝑚𝑅𝐿
𝑉 𝑑𝑐 = 1
( +𝑅 𝐿)
4𝑓𝑐
1 𝑉𝑚
𝑉𝑟𝑚𝑠=( )(1 )
2√3𝑓𝑐 4𝑓𝑐
+ 𝑅𝐿
𝑉𝑟𝑚𝑠 𝑉
𝑅𝑖𝑝𝑝𝑙𝑒𝑓𝑎𝑐𝑡𝑜𝑟= 𝑟= (𝑜𝑟)= 𝑎𝑐
𝑉𝑑𝑐 𝑉𝑑𝑐
To calculate the percentage of Regulation
𝑉𝑛𝑜 𝑙𝑜𝑎𝑑 − 𝑉𝑓𝑢𝑙𝑙𝑙𝑜𝑎𝑑
%ƞ= 𝑥100%
𝑉𝑛𝑜𝑙𝑜𝑎𝑑
RESULT:
Thus the full wave rectifier with capacitive filter is designed and the corresponding Ripple
factor and percentage of Regulation are measured and verified with theoretical values.
TABULATION:
AIM:
To find the voltage regulation of a given Zener diode
APPARATUS:
THEORY:
A Zener diodeis heavily doped p-n junction diode, specially made to operate in the break
down region. A p-n junction diode normally does not conduct when reverse biased. But if the
reverse bias is increased, at a particular voltage it starts conducting heavily. This voltage is
called Break down Voltage. High current through the diode can permanently damage the
device.
To avoid high current, we connect a resistor in series with zener diode. Once the diode starts
conducting it maintains almost constant voltage across the terminals whatever may be the
current through it, i.e., it has very low dynamic resistance. It is used in voltage regulators.
PROCEDURE:
PRECAUTIONS:
1. The terminals of the Zener diode should be properly identified
2. While determined the load regulation, load should not be immediately shorted.
3. Should be ensured that the applied voltages & currents do not exceed the ratings of the diode.
RESULT:
MODEL GRAPH
EXPERIMENT NO: 4
DATE:
Common Emitter input-output characteristics
AIM:
To plot the input and output characteristics of a transistor connected in Common Emitter
Configuration and to find the dynamic resistance and amplification factor.
APPARATUS REQUIRED:
Max Rating:
1. TransistorBC107 1
50V1A, 3W
2. Resistors 1KΩ 2
3. Dual Regulated Power Supply (0-30)V 1
MC(0-2)V 1
4. Voltmeters
MC(0-10)V 1
MC(0- 1
5. Ammeters
25)mA,MC(0- 1
100)µA
6. Breadboard 1
7. Connecting Wires Few
THEORY:
A Bipolar Junction Transistor or BJT is a three terminal device having two PN-
junctions connected together in series. Each terminal is given a name to identify it and these
are known as the Emitter (E), Base (B)and Collector (C).
There are two basic types of bipolar transistor construction, NPN and PNP, which basically
describes the physical arrangement of the P-type and N-type semiconductor materials from
which they are made.
TABULATION
INPUT CHARACTERISTICS
VCE= 1 V VCE= 2 V
OUTPUT CHARACTERISTICS
IB= µA IB= µA
The principle of operation of the two transistors types NPN and PNP, is exactly the same the
only difference being in the biasing (base current) and the polarity of the power supply for
each type.
In CE configuration, Emitter is common to both the input and output as shown in figure. The
direction of the arrow in the symbol shows current flow between the base and emitter
terminal, pointing from the positive P-type region to the negative N-type region, exactly the
same as for the standard diode symbol. For normal operation, the emitter-base junction is
forward-biased and the collector-base junction is reverse-biased.
DESCRIPTION:
Input Characteristics: The variation of the base current IB with the base-emitter voltage VBE
keeping the collector-emitter voltage VCE fixed, gives the input characteristic in CE mode.
Input Dynamic Resistance (ri): This is defined as the ratio of change in base emitter voltage
(ΔVBE) to the resulting change in base current (ΔIB) at constant collector-emitter voltage
(VCE). This is dynamic and it can be seen from the input characteristic, its value varies with
the operating current in the transistor:
𝛥𝑉𝐵𝐸
𝑟𝑖 = |
𝛥𝐼𝐵 𝑉𝐶𝐸
The value of ri can be any thing from a few hundreds to a few thousand ohms.
Output Characteristics: The variation of the collector current I C with the collector-emitter
voltage VCE is called the output characteristic. The plot of I C versus VCE for different fixed
values of IB gives one output characteristic. Since the collector current changes with the base
current, there will be different output characteristics or responding to different values of IB.
𝛥𝑉𝐶𝐸
𝑟𝑜 = | 𝐼𝐵
𝛥𝐼𝐶
The High magnitude of the output resistance (of order of 100kW) is due to the reverse biased
state of this diode.
Current amplification factor (β)
This is defined as the ratio of the change in collector current to the change in base current at a
constant collector-emitter voltage (VCE) when the transistor is in active state.
𝛥𝐼𝐶
𝛽𝑎𝑐 = |
𝛥𝐼𝐵𝑉𝐶𝐸
This is also known as small signal current gain and its value us very large. The ratio of IC and
IB we get what is called dc of the transistor. Hence,
𝐼𝐶
𝛽𝑑𝑐= |
𝐼𝐵𝑉𝐶𝐸
Since IC increases with IB almost linearly, the values of both dc and ac are nearly equal.
PROCEDURE
To find the input Characteristics
1. Connect the circuit as in the circuit diagram.
2. Keep VBB and VCC in zero volts before giving the supply.
3. Set VCE= 1Volt by varying VCC and vary the VBB smoothly with fine control such
that base current IB varies in steps of 5µA from zero up to 100µA, and note down the
corresponding voltage VBE for each step in the tabular form.
4. Repeat the experiment forVCE1 volt and 2volts.
5. Draw a graph between VBE vs .IB against VCE=Constant
To find the output characteristics
1. Start VEE and VCC from zero volts.
2. Set the IB=20µA by using VBB such that, VCE changes in steps of 0.2volts from zero
up to 10 volts, note down the corresponding collector current I C for each step in the
tabular form.
3. Repeat the experiment for IE=20µA and IE=40µA, tabulate the readings
4. Draw a graph between VCE vs IC against IB=Constant.
RESULT:
Thus the input and output Characteristic of BJT in Common Emitter Configuration were
plotted and the dynamic resistance and amplification factor were obtained.
,
CIRCUIT DIAGRAM:
,
EXPERIMENT N0: 5
DATE
N-CHANNEL MOSFET DRAIN AND TRANSFER CHARACTERISTICS
AIM:
To study transfer and output characteristics of an n-channel Metal Oxide Semiconductor field
effect Transistor (MOSFET) in Common-source configuration.
APPARATUS:
MOSFET(2N7000),
Breadboard, resistor (1KΩ, 100KΩ),
Connecting wires,
Ammeters (0‐10mA/ 0‐25mA),
DC power supply
(0‐30V)multimeter.
THEORY:
The MOSFET is actually a four-terminal device, whose substrate, or body terminal must be always
held at one of the extreme voltage in the circuit, either the most positive for the PMOS or the most
negative for the NMOS. One unique property of the MOSFET is that the gate draws no measurable
current.
PROCEDURE:
TRANSFER CHARACTERISTICS:
1. Connect the circuit as per given diagram properly.
2. Set the voltage VDSconstant at10V.
3. Vary VGS by varying VGG in the step of 0.1 upto 1.55 V and note down value of drain current
ID. Tabulate all the readings.
4. Plot the output characteristics VDS vs ID and transfer characteristics VGS vs ID.
5. Calculate VT, gm, from the graphs and verify it from the datasheet
,
OBSERVATION TABLE:
VDS(V) ID(mA) VDS(V) ID(mA) VDS(V) ID(mA) VDS(V) ID(mA) VDS(V) ID(mA)
0 0 0 0 0
1 1 1 1 1
2 2 2 2 2
. . . . .
. . . . .
. . . . .
TRANSFER CHARACTERISTICS
VDS= 10 V
VGS(V) ID(mA)
0.1
1.1
1.2
1.3
1.4
1.5
1.55
,
CALCULATION:
1. Threshold voltage VT:Gate to source voltage at which, drain current starts flowing.
3. Output drain resistance: It is given by the relation of small change in drain to source
Voltage (ΔVDS) to the corresponding change in Drain Current (ΔID) for a constant VGS.
RESULTS:
1. VT:
2. gm :
3. ro:
,
PIN DIAGRAM
APPARATUS REQUIRED:
COMPONENTS
Sl.No SPECIFICATIONS QUANTITY
/EQUIPMENTS
5. CRO (0-30)MHz 1
7. Breadboard 1
8. Connecting Wires Few
9. BNC CRO probe 2
THEORY:
Common Emitter amplifier has the emitter terminal as the common terminal between
input and output terminals. The emitter base junction is forward biased and collector base
junction is reverse biased, so that transistor remains in active region throughout the operation.
When a sinusoidal AC signal is applied at input terminals of circuit during positive half cycle
the forward bias of base emitter junction VBE is increased resulting in an increase in IB, the
increase in IB, VCE is correspondingly
,
TABULATION
Vi=1V
MODEL GRAPH
decreased. i.e. output voltage gets decreased. Thus in a CE amplifier a positive going signal is
converted into a negative going output signal i.e. 180° phase shift is introduced between
output and input signal and it is an amplified version of input signal.
,
PROCEDURE:
RESULT:
Thus a BJT CE amplifier with voltage divider bias was designed and plotted the frequency
response curve
,
CIRCUIT DIAGRAM
MODEL GRAPH
INPUT WAVEFORM
B) OUTPUT WAVEFORM
,
APPARATUS:
THEORY:
A field-effect transistor (FET) is a type of transistor commonly used for weak-signal
amplification (for example, for amplifying wireless (signals). The device can amplify analog or
digital signals. It can also switch DC or function as an oscillator. In the FET, current flows along
a semiconductor path called the channel. At one end of the channel, there is an electrode called
the source. At the other end of the channel, there is an electrode called the drain. The physical
diameter of the channel is fixed, but its effective electrical diameter can be varied by the
application of a voltage to a control electrode called the gate. Field-effect transistors exist in two
major classifications. These are known as the junction FET(JFET)and the metal-oxide-
semiconductor FET(MOSFET). The junction FET has a channel consisting of N-type
semiconductor (N-channel) or P-type semiconductor (P-channel) material; the gate is made of the
opposite semiconductor type. In P-type material, electric charges are carried mainly in the form
of electron deficiencies called holes. In N-type material, the charge carriers are primarily
electrons. In a JFET, the junction is the boundary between the channel and the gate. Normally,
this P-N junction is reverse-biased (a DC voltage is applied to it) so that no current flows
between the channel and the gate. However, under some conditions there is a small current
through the junction during part of the input signal cycle. The FET has some advantages and
some disadvantages relative to the bipolar transistor.
,
FREQUENCY RESPONSE PLOT
TABULATION
Field-effect transistors are preferred for weak-signal work, for example in wireless,
communication and broadcast receivers. They are also preferred in circuits and systems requiring
high impedance. The FET is not, in general, used for high-power amplification, such as is
required in large wireless communications and broadcast transmitters.
Field-effect transistors are fabricated onto silicon integrated circuit (IC) chips. A single IC can
contain many thousands of FETs, along with other components such as resistors, capacitors, and
diodes. A common source amplifier FET amplifier has high input impedance and a moderate
voltage gain. Also, the input and output voltages are 180 degrees out of Phase.
PROCEDURE:
1. Connections are made as per the circuit diagram.
2. A signal of 1 KHz frequency and 20mVpeak-to-peak is applied at the Input of
amplifier.
3. Output is taken at drain and gain is calculated by using the expression,
Av=V0/Vi
4. Voltage gain in dB is calculated by using the expression,
Av=20 log10(V0/Vi)
5. Repeat the above steps for various input voltages.
6. Plot Av in dB Versus Frequency
7. The Bandwidth of the amplifier is calculated from the graph using the Expression,
BandwidthBW=f2-f1
PRECAUTIONS:
1. All the connections should be tight.
2. Transistor terminals must be identified properly
RESULT:
Thus the frequency response of the common source FET Amplifier was drawn and
Bandwidth was calculated.
Bandwidth=
,
,
,
EXPERIMENT NO:7A
DATE:
DESIGN OF COMMON BASE AMPLIFIER CIRCUIT
AIM:
To design and construct a Common Base amplifier circuit using and to calculate its bandwidth and
cutoff frequency.
EQUIPMENTS REQUIRED:
1 Transistor BC547 1
2 RPS (0-30)V 1
3 Resistor 22K 1
4 Resistor 4.7K 1
5 Resistor 330 Ω 1
6 Resistor 1.2K 1
7 Capacitor 1 uf 3
8 BreadBoard - 1
9 Single strand Wires - -
10 CRO 30 MHz 1
11 CRO Probes - 3
12 Function Generator (0-3)MHz 1
THEORY
An amplifier is used to increase the signal level; the amplifier is use to get a larger signal output
from a small signal input The transistor can be used as a amplifier, if it is biased to operate in the
active region, i.e. base-emitter junction is to be forward biased, while the base –collector junction
to be reverse biased. Common-Base amplifier is constructed using self-bias circuit. The resistors
R1, R2 and RE are biasing resistors. Acts as a potential divider. Due to the change in the
temperature or β, the base current increases so this makes to increase the collector current IC,
therefore a Reverse Leakage Current ICO increases hence this affects the stability of transistor. By
providing an emitter resistor RE, it creates a voltage drop across RE therefore the increased emitter
current due to IC starts to flow through RE to ground and this makes in the reduction of Base
Emitter Voltage VBE. Due to reduction in V BE, base current IB reduces and hence collector Current
IC also reduces and the output remains constant.
For the common base amplifier the AC Input resistance is typically low from 10to100Ω.The output.
,
TABULATION
Vin =
resistance of CB amplifier is typically high from 50KΩ to 1MΩ. Typical values of voltage amplification
(Av) for CB amplifier vary from 50 to 300. The current amplification is always less than 1. The basic CB
amplifying action was proposed for transferring the current from low resistance to high resistance circuit.
PROCEDURE
RESULT
Hence designed and constructed the Common Base Amplifier and calculated the
bandwidth and cut-off frequency.
,
CIRCUIT DIAGRAM:
INPUT WAVWFORM
OUTPUT WAVEFORM
,
APPARATUS REQUIRED:
TransistorBC107 -1No.
Regulated Power Supply (0-30V) -1No.
Function Generator -1No.
CRO -1No.
Resistors 33KΩ, 3.3KΩ, 330Ω, -1No.Each
1.5KΩ, 1KΩ, 2.2KΩ & 4.7KΩ
Capacitors10µF -2Nos
100µF -1No.
Breadboard
Connecting wires
THEORY:
In common-collector amplifier the input is given at the base and the output is taken at the emitter. In
this amplifier, there is no phase inversion between input and output. The input impedance of the CC
amplifier is very high and output impedance is low. The voltage gain is less than unity. Here the collector is
at ac ground and the capacitors used must have a negligible reactance at the frequency of operation.
This amplifier is used for impedance matching and as a buffer amplifier. This circuit is also known as
emitter follower.
The most common use of the emitter follower is as a circuit, which performs the function of impedance
transformation over a wide range of frequencies.
,
TABULATION:
PROCEDURE:
Av=20log10(V0/Vi)
6. A graph is drawn by taking frequency on X-axis and gain in dB on y-axis on semi-log graph sheet.
7. The Bandwidth of the amplifier is calculated from the graph using the Expression,
Bandwidth BW=f2-f1
Where f1is lower cut-off frequency of CE amplifier ; f2is upper cut-off frequency of CE amplifier
8. The gain Bandwidth product of the amplifier is calculated using the Expression,
PRECAUTIONS:
1. The input voltage must be kept constant while taking frequency response.
2. Proper biasing voltages should be applied.
RESULT:
Thus the voltage gain of a CC amplifier was measured and the frequency response of the CC
amplifier was drawn.
CIRCUIT DIAGRAM:
MODEL CALCULATIONS
𝑉𝑂
𝐺𝑎𝑖𝑛 𝐴𝐶=
((𝑉1 +𝑉2)/2)
AC=
𝑉𝑂
𝐺𝑎𝑖𝑛 𝐴𝑑=
(𝑉1 −𝑉2)
Ad=
DATE:
Differential amplifier using FET
AIM:
To construct the Differential Amplifier in Differential mode and to find the common
mode rejection ratio (CMRR).
APPARATUSREQUIRED:
COMPONENTS
Sl.No SPECIFICATIONS QUANTITY
/EQUIPMENTS
1. FET BFW10 2
2. Resistor 1KΩ 3
3. Dual trace CRO 20MHz 1
4. Dual Regulated Power Supply (0-30)V 1
5. Breadboard 1
6. Connecting Wires Few
THEORY
CMRR=|Ad/Ac|
Where
Ad =Differential mode gain
Ac=Common mode gain
1. Connections are made as per the circuit diagram.
2. Switch ON the RPS
3. Vary the input voltages using function generator and note the corresponding output voltage.
4. ReducetheRPSvoltageto0V
5. Calculate the Gain.
6. Calculate the CMRR
RESULT
Thus constructed a differential amplifier circuit for single input balanced output in the common
mode and differential mode configuration and studied the output waveform, also its CMRR has been
determined and verified practically.
Differential mode :
Common mode :
CMRR :
,
EXPERIMENT NO: 8
DATE:
CASCODE AMPLIFIERS
AIM:
To design and construct a cascade amplifier circuit and to draw its frequency response graph.
EQUIPMENTS REQUIRED
1 Transistor BC547 2
2 RPS (0-30)V 1
3 Resistor 1.2K,33 K,22K, 12K 1
4 Resistor 680Ω 1
5 Capacitor 1 uf,2.2uf 2
6 BreadBoard - 1
7 Single strand Wires - -
8 CRO (0-30)MHz 1
9 CRO Probes - 3
10 Function Generator (0-3)MHz 1
THEORY
A cascode amplifier comprises of a common emitter amplifier and a common base amplifier
stages in cascade. In the circuit diagram Q1 common base configuration and Q2 is common emitter
configuration. Principal advantage of this circuit is its low internal capacitance which is a limiting factor
gain at high frequencies. Cascode amplifier can able to amplify wide range of frequencies than that is
possible with CE amplifier. This is because no high frequency feedback occurs from the output back to
input through the miller capacitance as it occurs in transistor CE configuration. Cascode amplifier
provides same voltage gain of CE amplifier but in wide range of frequencies. The advantage of CE and
CB stages are put together in cascode connection.
,
TABULATION
Vin=
Frequency Output Gain=20log(Vo/Vi)
SL.NO
(Hz) Voltage(Vo) (db)
,
PROCEDURE
RESULT
Hence designed and constructed Cascode amplifier and plotted its frequency response.
CIRCUIT DIAGRAM:
GRAPH:
INPUT WAVEFORM
OUTPUT WAVEFORM
ELECTRONICDEVICESANDCIRCUITSLAB
EXPERIMENT NO: 10
DATE:
AIM:
To observe the input and output waveforms and to calculate the efficiency of CLASS
A Power Amplifier.
EQUIPMENT REQUIRED:
1 Transistor BC547 2
2 RPS (0-30)V 1
3 Resistor 1.2K,33 K,22K, 12K 1
4 Resistor 680Ω 1
5 Capacitor 1 uf,2.2uf 2
6 BreadBoard - 1
7 Single strand Wires - -
8 CRO (0-30)MHz 1
9 CRO Probes - 3
10 Function Generator (0-3)MHz 1
THEORY:
The amplifier is said to be class A power amplifier if the q point and the input signal are
selected such that the output signal is obtained for a full input cycle. For this class the position
of q point is approximately at the midpoint of the load line. For all the values of input signal
the transistor remains in the active region and never entire into the cutoff or saturation region.
The collector current flows for 3600 (lifecycle) of the input signal in other words the angle of
the collector current flow is 3600 the class A amplifiers or furthers classified as directly
coupled and transformer coupled and transformer coupled amplifiers in directly coupled type.
The load is directly connected in the collector circuit while in the transformer coupled type,
the load is coupled to the collector using the transformer.
Advantages:
2. It amplifies audio frequency signals faithfully hence they are called as audio
amplifiers
Disadvantages:
PROCEDURE
RESULT: