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WEEK 2 Tutorial

The document outlines a problem-solving session for a course on Power Electronic Converters, led by Prof. Shabari Nath. It includes various questions regarding the characteristics and classifications of electronic devices like IGBT, MOSFET, and BJT, as well as practical tasks related to the MOSFET 'IRFB7530PbF'. The session aims to enhance understanding of device properties, switching speeds, and thermal characteristics.

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Sargam
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10 views37 pages

WEEK 2 Tutorial

The document outlines a problem-solving session for a course on Power Electronic Converters, led by Prof. Shabari Nath. It includes various questions regarding the characteristics and classifications of electronic devices like IGBT, MOSFET, and BJT, as well as practical tasks related to the MOSFET 'IRFB7530PbF'. The session aims to enhance understanding of device properties, switching speeds, and thermal characteristics.

Uploaded by

Sargam
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Design of Power Electronic

Converters
Course Instructor: Prof. Shabari Nath (IIT Guwahati)

NPTEL Problem Solving Session - Week 1

Asif Mushtaq Bhat


Research Scholar, IIT Delhi
Summary
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Problem Solving

1. Which of the following statement(s) below is/are true?

a) IGBT and MOSFET are current controlled devices.

b) BJT is voltage-controlled device.

c) BJT is current controlled device.

d) IGBT is current controlled and MOSFET is voltage-controlled device.

e) IGBT and MOSFET are voltage-controlled devices.


Problem Solving
2. Which of the following statement(s) below is/are true?

a) IGBT and MOSFET are bidirectional currents and unipolar voltage devices.

b) IGBT and MOSFET are unidirectional currents and bipolar voltage devices.

c) IGBT and MOSFET are unidirectional currents and unipolar voltage devices.

d) IGBT and MOSFET are bidirectional currents and bipolar voltage devices.
Problem Solving
3. Rearrange the devices in ascending order based on their switching speed.

a) Rectifier diodes < Fast recovery diodes < Schottky diodes

b) Fast recovery diodes < Schottky diodes < Rectifier diodes

c) Rectifier diodes < Schottky diodes < Fast recovery diodes.

d) Schottky diodes < Rectifier diodes < Fast recovery diodes.


Problem Solving
4. What is the softness factor S, for fast recovery diode?

a) >1

b) =1

c) =0

d) <1
Problem Solving
5. Point out which statement(s) below is/are true.

a) MOSFET have lower switching loss and higher conduction than BJT.

b) MOSFET have higher switching loss and lower conduction than BJT.

c) On-state voltage drop of MOSFET is lower than BJT.

d) On-state voltage drop of MOSFET is higher than BJT.


Problem Solving
The MOSFET “IRFB7530PbF” is chosen for the synchronous buck-boost converter. You need to read the datasheet of
MOSFET. After studying the datasheet, enter the following values

6. Voltage rating

7. Continuous current rating at 100°C

8. Maximum ON state resistance, RDS-on

9. Maximum gate to source threshold voltage

10. Maximum total gate charge


Problem Solving

11. Typical turn ON time

12. Typical turn OFF time of MOSFET


Problem Solving
13. Typical reverse recovery time of the body diode at 125°C

14. dv/dt limit for the body diode … V/ns.

15. Maximum junction temperature … (οC).


Problem Solving

16. Junction to case thermal resistance, Rϴjc … (οC /W).

17. Typical Case to sink thermal resistance, Rϴcs … (οC /W).


Problem Solving

18. Calculate the typical value of the reverse recovery current Irr at 25°C … A.
Problem Solving
19. Input capacitance … pF.

20. Reverse Transfer capacitance … pF.


Problem Solving
Problem Solving
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Problem Solving

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