2.

SPECIAL DIODES

Zener diode - Varactor diode - LED ( Light Emitting Diode) - Photo diode - Tunnel diode

ZENER DIODE :

A zener diode is a special type of device designed to operate in the zener

breakdown region. Zener diodes acts like normal p-n junction diodes under
forward biased condition. When forward biased voltage is applied to the zener
diode it allows large amount of electric current and blocks only a small
amount of electric current.

Zener diode is heavily doped than the normal p-n junction diode. Hence, it has
very thin depletion region. Therefore, zener diodes allow more electric current
than the normal p-n junction diodes.

Zener diode allows electric current in forward direction like a normal diode but
also allows electric current in the reverse direction if the applied reverse
voltage is greater than the zener voltage. Zener diode is always connected in
reverse direction because it is specifically designed to work in reverse
direction.

Symbol of Zener diode:

The symbol of zener diode is shown in below figure. Zener diode consists of
two terminals: cathode and anode. The symbol of zener diode is similar to the
normal p-n junction diode, but with bend edges on the vertical bar.

In Zener diode, electric current flows from both anode to cathode and cathode
to anode.
The VI characteristics of a zener diode is shown in the below
figure. When forward biased voltage is applied to the zener diode, it works like
a normal diode. However, when reverse biased voltage is applied to the zener
diode, it works in different manner.

When reverse biased voltage is applied to a zener diode, it allows only a small
amount of leakage current until the voltage is less than zener voltage. When
reverse biased voltage applied to the zener diode reaches zener voltage, it
starts allowing large amount of electric current. At this point, a small increase
in reverse voltage will rapidly increases the electric current. Because of this
sudden rise in electric current, breakdown occurs called zener breakdown.
However, zener diode exhibits a controlled breakdown that does damage the
device.

The zener breakdown voltage of the zener diode is depends on the amount of
doping applied. If the diode is heavily doped, zener breakdown occurs at low
reverse voltages. On the other hand, if the diode is lightly doped, the zener
breakdown occurs at high reverse voltages. Zener diodes are available with
zener voltages in the range of 1.8V to 400V.
Breakdown in zener diode:
There are two types of reverse breakdown regions in a zener diode:
Zener breakdown and Avalanche breakdown.

Zener breakdown:

The zener breakdown occurs in heavily doped p-n junction diodes because of
their narrow depletion region. When reverse biased voltage applied to the
diode is increased, the narrow depletion region generates strong electric field.

When reverse biased voltage applied to the diode reaches close to zener
voltage, the electric field in the depletion region is strong enough to pull
electrons from their valence band. The valence electrons which gains sufficient
energy from the strong electric field of depletion region will breaks bonding
with the parent atom. The valance electrons which break bonding with parent
atom will become free electrons. This free electrons carry electric current from
one place to another place. At zener breakdown region, a small increase in
voltage will rapidly increases the electric current.

 Zener breakdown occurs at low reverse voltage whereas avalanche

breakdown occurs at high reverse voltage.
 Zener breakdown occurs in zener diodes because they have very thin
depletion region.
 Breakdown region is the normal operating region for a zener diode.
 Zener breakdown occurs in zener diodes with zener voltage (Vz) less
than 6V.
Avalanche breakdown:
The avalanche breakdown occurs in both normal diodes and zener diodes at
high reverse voltage. When high reverse voltage is applied to the p-n junction
diode, the free electrons (minority carriers) gains large amount of energy and
accelerated to greater velocities.

The free electrons moving at high speed will collides with the atoms and
knock off more electrons. These electrons are again accelerated and collide
with other atoms. Because of this continuous collision with the atoms, a large
number of free electrons are generated. As a result, electric current in the diode
increases rapidly. This sudden increase in electric current may permanently
destroys the normal diode. However, avalanche diodes may not be destroyed
because they are carefully designed to operate in avalanche breakdown region.
Avalanche breakdown occurs in zener diodes with zener voltage (Vz) greater
than 6V.
Zener diode as a Voltage Regulator:

Zener diode is a silicon semiconductor with a p-n junction that is specifically

designed to work in the reverse biased condition. When forward biased, it
behaves like a normal signal diode, but when the reverse voltage is applied to
it, the voltage remains constant for a wide range of currents. Due to this
feature, it is used as a voltage regulator in d.c. circuit. The primary objective of
the Zener diode as a voltage regulator is to maintain a constant voltage. Let us
say if Zener voltage of 5 V is used then, the voltage becomes constant at 5 V,
and it does not change.
A Semiconductor Diode blocks current in the reverse direction but will suffer
damage if the reverse voltage applied across becomes too high.
A voltage regulator is a device that regulates the voltage level. It essentially
steps down the input voltage to the desired level and keeps it at that same level
during the supply. This ensures that even when a load is applied the voltage
doesn’t drop. The voltage regulator is used for two main reasons, and they are:
To vary or regulate the output voltage
To keep the output voltage constant at the desired value in spite of variations
in the supply voltage.
Voltage regulators are used in computers, power generators, alternators to
control the output of the plant.
 There is a series resistor connected to the circuit in order to limit the current
into the diode. It is connected to the positive terminal of the d.c. It works in
such a way the reverse-biased can also work in breakdown conditions. We do
not use ordinary junction diode because the low power rating diode can get
damaged when we apply reverse bias above its breakdown voltage. When the
minimum input voltage and the maximum load current is applied, the Zener
diode current should always be minimum.
The value of the series resistor is written as RS = (VL − VZ)IL.
Current through the diode increases when the voltage across the diode tends to
increase which results in the voltage drop across the resistor. Similarly, the
current through the diode decreases when the voltage across the diode tends to
decrease. Here, the voltage drop across the resistor is very less, and the output
voltage results normally.
Since the input voltage and the required output voltage is known, it is
easier to choose a Zener diode with a voltage approximately equal to the load
voltage, i.e. VZ = VL
KEY POINTS :

▶ When the input voltage (Vin) is greater than the Zener voltage (Vz),
the diode enters the breakdown region and acts as a low impedance
path.

▶ As a result, the excess current flows through the diode, limiting the
voltage across the load (Vout) to the Zener voltage (Vz).

▶ Conversely, when the input voltage (Vin) is lower than the Zener
voltage (Vz), the diode remains in the normal forward bias region and
allows current to pass through it.

▶ In this case, the voltage across the load (Vout) is equal to the
inputvoltage (Vin) minus the forward voltage drop of the diode.
Advantages of Zener diode:

Power dissipation capacity is very high

 High accuracy

 Efficiency: Zener diodes provide efficient voltage regulation with low

power dissipation.
 Small size
 Low cost
 Simplicity: Zener diode voltage regulators are straight forward to design
and implement

Applications of Zener diode:

 Zener diode is normally used as voltage regulators.

 Zener diodes are used in voltage stabilizers or shunt regulators.
 Zener diodes are used in switching operations
 Zener diodes are used in clipping and clamping circuits.
 Zener diodes are used in various protection circuits.
2. VARACTOR DIODE

The diode whose internal capacitance varies with the variation of the reverse
voltage such type of diode is known as the Varactor diode.
 It is used for storing the charge.
 The varactordiode always works in reverse bias, and it is a voltage-
dependent semiconductor device.
The voltage-dependent device means the output of the diode
depends on their input voltage.
 The varactor diode is used in a place where the variable capacitance
is required, and that capacitance is controlled with the helpof the
voltage.
 The Varactor diode is also known as the Varicap, Voltcap, Voltage
variable capacitance or Tunningdiode.

Symbol of Varactor Diode

A Diode is an electronic component that has two terminals and allows
current to flow only in one direction. Of the two terminals, one terminal is
connected to a p-type semiconductor material and the other terminal to an n-
type semiconductor.

The symbol of the varactor diode is similar to that of the PN-

junction diode.
The diode has two terminals namely anode and cathode. The one end of
a symbol consists thediode, and their other end has two parallel lines
that represent the conductive plates of the capacitor.
The gapbetween the plates shows their dielectric.
Construction
A Varactor Diode consists of p-type and n-type semiconductor layers
sandwiched together, with the n-type layer attached to a mesa (table- shaped)
structure. A gold plated molybdenum stud is connected to n-type layer via
themesa structure and it acts as cathode terminal.

The p-type layer is connected to another gold plated molybdenum stud

(whichacts as anode) via a gold wire. Except for some portion of the
molybdenum studs, the entire arrangement is enclosed in a ceramic layer.

The p-type and n-type layers of the varactor diode are made up of
silicon or gallium arsenide depending on the type of application for
which it is used. For low frequency applications, silicon is used, and
for high-frequency applicationsgallium arsenide is used.

For conventional diodes, the p-type and n-type semiconductor

layers are uniformly doped with impurities to improve conductivity.
But in the case of varactor diodes, the concentration of impurities
near the pn junction is very less and it gradually increases as we
move towards the layer’s other surface.
 Working of Varactor Diode

The Varactor diode is made up of n-type and p-type

semiconductor material. In an n-type semiconductor material,
the electrons are the majority charge carrier and in the p-type
material, the holes are the majority carriers. When the p-type
and n-type semiconductor material are joined together, the p-n
junction is formed,and the depletion region is created at the PN-
junction.
The positive and negative ions make the depletion region. This
region blocks the current to enter from the PN-region.

The varactor diode operates only in reverse bias. Because of

reverse bias, the current does not flow.
WORKING PTRINCIPLE :
A capacitor consists of two conducting surfaces separated by a
non- conducting dielectric medium (see figure below). When one
of surfaces is connected to a positive voltage and the other to
negative voltage, because of attraction between positive and
negative carriers, positive charge accumulates on one surface
and negative charge on the other.
 The amount of charge that accumulates is termed
as capacitance. If we reduce the gap between the
two surfaces, the force of attraction between
positive and negative charge carriers increases and
so more charge accumulates on the surface i.e. the
capacitance increases.

The opposite happens when the surfaces are moved away from
each other i.e..the capacitance decreases. A variable
capacitor has a mechanical arrangement which allows us to
change the gap between surfaces, which effectively changes
the capacitance.

Characteristic of Varactor Diode

 You can observe that the junction capacitance of

a varactor diode is inversely proportional to
reverse bias voltage.

 Also because of difference in the way impurities

are added to the p-type and n-type layers, the
capacitance of a varactor diode is always higher
than that of a conventional diode.
 The below graph illustrates the relation between the
magnitude of reverse bias voltage p-type & n-type
layers of a varactor diode, and the magnitude of
junction capacitance.

The graph shows that when the

reverse bias voltage increases the
depletion region increases, and the
capacitance of the diode reduces.
Advantages of Varactor Diode
The following are the advantages of the varactor diode.

1. The varactor diode produces less noise as less compared

to the other diode.
2. It is less costly and more reliable.
3. The varactor diode is small in size and less in weight.

Applications
 Owing to the special property of varying capacitance
with varying voltage, varactor diodes are mostly used
in frequency modulation or tuning circuits where the
value of capacitance determines the output
modulation frequency.
 Some of the other applications include:

 Automatic Frequency Controllers (AFCs)

 Ultra High Frequency Television sets
 High frequency Radios
 Frequency Multipliers
 Band Pass Filters
 Harmonic Generators
Varactor diode in Tunning Circuit
The figure below shows that D1 and D2 are the two
Varactor diode. These diodes provide the variable
resistance in the parallel resonance circuit. The Vc is the
DC voltage used for controlling the reverse voltage of the
diode.

frequency Where,

The L is the inductance of the circuit, and it is measured

in Henry. The resonant of the circuit is expressed as
C1 and C2 is the maximum voltage capacitance of the
diode.
Light Emitting Diode (LED):
Light Emitting Diodes (LEDs) are the most widely used semiconductor diodes
among all the different types of semiconductor diodes available today. Light
emitting diodes emit either visible light or invisible infrared light when
forward biased. The LEDs which emit invisible infrared light are used for
remote controls.
The symbol of LED is similar to the normal p-n junction diode except that it
contains arrows pointing away from the diode indicating that light is being
emitted by the diode.

LEDs are available in different colors. The most common colors of LEDs are
orange, yellow, green and red.
The schematic symbol of LED does not represent the color of light. The
schematic symbol is same for all colors of LEDs. Hence, it is not possible to
identify the color of LED by seeing its symbol.
A light Emitting Diode (LED) is an optical semiconductor device that emits
light when voltage is applied. In other words, LED is an optical semiconductor
device that converts electrical energy into light energy.

When Light Emitting Diode (LED) is forward biased, free electrons in the
conduction band recombines with the holes in the valence band and releases
energy in the form of light.
The process of emitting light in response to the strong electric field or flow of
electric current is called electroluminescence.
The construction of LED is similar to the normal p-n junction diode except
that gallium, phosphorus and arsenic materials are used for construction
instead of silicon or germanium materials.
In normal p-n junction diodes, silicon is most widely used because it is less
sensitive to the temperature. Also, it allows electric current efficiently without
any damage. In some cases, germanium is used for constructing diodes.
However, silicon or germanium diodes do not emit energy in the form of light.
Instead, they emit energy in the form of heat. Thus, silicon or germanium is
not used for constructing LEDs.
Working of LED:

LED in the a figure has a flat side and

curved side, the lead at the flat side is
made shorter than the other one, so as to
indicate that the shorter one is Cathode
or negative terminal and the other one is
Anode or the Positive terminal.

Light Emitting Diode (LED) works only in

forward bias condition. When Light Emitting Diode (LED) is forward biased,
the free electrons from n-side and the holes from p-side are pushed towards the
junction.
When free electrons reach the junction or depletion region, some of the free
electrons recombine with the holes in the positive ions. We know that positive
ions have less number of electrons than protons. Therefore, they are ready to
accept electrons. Thus, free electrons recombine with holes in the depletion
region. In the similar way, holes from p-side recombine with electrons in the
depletion region.
Because of the recombination of free electrons and holes in the depletion
region, the width of depletion region decreases. As a result, more charge
carriers will cross the p-n junction.
Some of the charge carriers from p-side and n-side will cross the p-n junction
before they recombine in the depletion region. For example, some free
electrons from n-type semiconductor cross the p-n junction and recombines
with holes in p-type semiconductor. In the similar way, holes from p-type
semiconductor cross the p-n junction and recombines with free electrons in the
n-type semiconductor.
Thus, recombination takes place in depletion region as well as in p-type
and n- type semiconductor.The free electrons in the conduction band
releases energy in the form of light before they recombine with holes in
the valence band.In silicon and germanium diodes, most of the energy is
released in the form of heat and emitted light is too small.However, in
materials like gallium arsenide and gallium phosphide the emitted
photons have sufficient energy to produce intense visible light.

As the electrons jump into the holes,the

energy is dissipated spontaneously in the form of light. LED is a
current dependent device. The output light intensity dependsupon
the current through the diode.
 Output characteristics of LED:
The amount of output light emitted by the LED is directly proportional
to the amount of forward current flowing through the LED. More the
forward current, the greater is the emitted output light. The graph of
forward current vs output light is shown in the figure.

The amount of output light emitted by the LED is directly proportional

to the amount of forward current flowing through the LED
The brightness of light emitted by LED is depends on the current
flowing through the LED. Hence, the brightness of LED can be easily
controlled by varying the current. This makes possible to operate LED
displays under different ambient lighting conditions.

ADVANTAGES :
1. Consumes low energy
2. Very cheap & readily available
3. Light in weight
4. Smaller size
5. Longer lifetime.
6. operates very fast.
7. can be turned on and off in very less time.
8. do not contain toxic material like mercury
which is used in fluorescent lamps.
9. can emit different colors of light.
 10. High efficiency
11. High speed
12. High reliability
13. Low heat dissipation
14. Larger life span
15. Low cost
16. Easily controlled and programmable
17. High levels of brightness and intensity
18. Low voltage and current requirements
19. Less wiring required
20. Low maintenance cost
21. No UV radiation
22. Instant Lighting effect
Disadvantages of LED
LEDs need more power to operate than normal p-n junction
diodes. Luminous efficiency of LEDs is low.
Applications of LED
Burglar alarms systems ,Calculators.Picture phones,Digital
computers,Multimeters,Microprocessors ,Digital watches,Automotive
heat lamps,Camera flashes,Aviation lighting.
In Displays

• Especially used for seven segment display

• Digital clocks
• Microwave ovens
• Traffic signaling
• Display boards in railways and public places
• Toys
In Electronic Appliances
• Stereo tuners
• Calculators
• DC power supplies
• On/Off indicators in amplifiers
• Power indicators

Commercial Use

• Infrared readable machines

• Barcode readers
• Solid state video displays

Optical Communications

• In Optical switching applications

• For Optical coupling where manual help is unavailable
• Information transfer through FOC
• Image sensing circuits
• Burglar alarms
• In Railway signaling techniques &door and security systems
Optoelectronics (or optronics) is the study and application of
electronic devices and systems that source, detect and control light,
usually considered a sub-field of photonics. In this context,light often
includes invisible forms of radiation such as gamma rays, X-rays,
ultraviolet and infrared, in addition to visible light.
Optoelectronic devices are electrical-to-optical or optical-to- electrical
transducers, or instruments that use such devices in their operation.
Electro-optics is often erroneously used as a synonym, but is a wider
branch of physics that concerns all interactions between light and
electric fields, whether or not they form part of an electronic device.
Optoelectronics is based on thequantum mechanical effects of light on
electronic materials, especially semiconductors, sometimes in the
presence of electric fields.
Photo diode:

Definition: A special type of PN junction device that generates

current when exposed to light is known as Photodiode. It is also
known as photodetector or photosensor. It operates in reverse biased
mode and converts light energy intoelectrical energy.

Principle of Photodiode
It works on the principle of Photoelectric effect.
The operating principle of the photodiode is such that when the
junction of this two-terminal semiconductor device is illuminated
then the electric current starts flowing through it. Only minority
current flows through the device when the certain reverse potential is
applied to it.

Construction of Photodiode:
OUTPUT:
It is noteworthy that
the current flowing
through the device is
in micro Ampere and
is measured through
an Ammeter.

The PN junction of the device placed inside a glass material. This is done to
order to allow the light energy to pass through it. As only the junction is
exposed to radiation, thus, the other portion of the glass material is
paintedblack or is metallised.
The overall unit is of very small dimension nearly about 2.5 mm.
Operational Modes of Photodiode
Photo diode basically operates in two
modes:
Photovoltaic mode: It is also known as zero-bias mode because
no external reverse potential is provided to the device. However,
the flow of minority carrier will take place when the device is
exposed to light.
Photoconductive mode: When a certain reverse potential is
applied to thedevice then it behaves as a photoconductive device.
Here, an increase in depletion width is seen with the
corresponding change in reverse voltage
KEY POINTS:.

When the diode is connected in reverse bias, a small reverse saturation current
flows due to thermally generated electron hole pairs. As the current in reverse
bias flows due to minority carriers,the output voltage depends upon this reverse
current. As the light intensity focused on the junction increases, the current flow
due tominority carriers increase.
Working of Photodiode
In the photodiode, a very small reverse current flows through the
device that is termed as dark current. It is called so because this
current is totally the result of the flow of minority carriers and is thus
flows when the device is not exposed to radiation.
The electrons present in the p side and holes present in n
side are the minority carriers. When a certain reverse-biased
voltage is applied then minority carrier, holes from n-side
experiences repulsive force from the positive potential of
thebattery.

Similarly, the electrons present in the p side experience

repulsion from the negative potential of the battery. Due
to this movement electron and hole recombine at the
junction resultantly generating depletion region at the
junction.

Due to this movement, a very small reverse current flows

through the deviceknown as dark current.

The combination of electron and hole at the junction

generates neutral atom at the depletion. Due to which any
further flow of current is restricted.

Now, the junction of the device is illuminated with light.

As the light falls on the surface of the junction, then the
temperature of the junction gets increased. This causes the
electron and hole to get separated from each other.
At the two gets separated then electrons from n side gets
attracted towards the positive potential of the battery.
Similarly, holes present in the p side get attracted to the
negative potential of the battery.

This movement then generates high reverse current through the

device.

With the rise in the light intensity, more charge carriers are
generated and flow through the device. Thereby, producing
a large electric current through the device.

This current is then used to drive other circuits of the system.

So, we can say the intensity of light energy

Is directly proportional to the current through the
device.

Only positive biased potential can put the device in no

current condition incase of the photodiode.

By changing the illumination level, reverse current can be

changed.

Characteristics of Photodiode
Here, the vertical line represents the reverse current
flowing through the device and the horizontal line
represents the reverse-biased potential.

The first curve represents the dark current that generates

due to minority carriers in the absence of light.

As we can see in the above figure that all the curve shows
almost equal spacing in between them. This is so because
current proportionally increases with the luminous flux.

TYPES:
1.PIN Photo diode
2.AVALANCHE photo diode

PIN photo diode:

AVALANCHE photo diode :
The diode which uses the avalanche method to provide extra performance as
compared to other diodes is known as avalanche photodiode.These diodes
are used to change the signals from optical to electrical. These diodes can be
operated in high reverse bias. The avalanche photodiode symbol is similar to
the Zener diode.

WORKING PRINCIPLE:
 Avalanche breakdown occurs only in maximum reverse voltage.


A huge charge carrier’s pair will result in high photocurrent.
 Tunnel diode
• Invented by Leo Esaki
• Tunnel diode is a heavily doped p-n junction diode (thin-junction)
• The Diode which utilizes this tunneling phenomenon to exhibit negative resistance
under forward bias condition is known as Tunnel Diode.
• i.e when the voltage is increased the current through it decreases.
• Tunneling is the phenomenon in which the electron from the N side penetrates into
the P side through the junction.
• Made from Germanium or Gallium Arsenide
• The Tunneling property is achieved by increasing the doping concentration of
1 part of 103.
• It consists of thin junction that is of 100 A˚ which is achieved by increasing the
doping concentration, since width of the junction barrier is inversely
proportional to square root of Impurity concentration.

Electron Devices
 Symbol & Equivalent circuit
of Tunnel diode
Symbol

Rs - series resistance Ls – series inductance

-Rn – negative resistance or junction resistance
C – junction capacitance

Electron Devices
 Width of the Depletion Region in Tunnel Diode
 When mobile charge carriers both free electrons and holes are missing, the
region in a p-n junction has a region called Depletion region.
 To stop the flow of electrons from the n-type semiconductor and holes from
the p-type semiconductor, depletion region acts as a barrier.
 Depending on the number of impurities added, width of depletion region
varies. To increase electrical conductivity of the p-type and n- type
semiconductor impurities are added.
 A wide and big depletion region is formed when a smaller number of
impurities is added to p-n junction diode.
 At the same time, when a greater number of impurities is added, narrow
depletion region occurs.

Electron Devices
 Tunneling Effect
 Tunneling is known as a direct flow of electrons across the small depletion region
from n-side conduction band into the p-side valence band.

 In a p-n junction diode, both positive and negative ions form the depletion region.

 Due to these ions, in-built electric potential or electric field is present in the
depletion region.

 This electric field gives an electric force to the opposite direction of externally
applied voltage.

Electron Devices
As the width of the depletion layer reduces, charge carriers can
easily cross the junction.
 Charge carriers do not need any form of kinetic energy to
move across the junction. Instead, carriers punch through
junction. This effect is called Tunneling and hence the
diode is called Tunnel Diode.
 Due to Tunneling, when the value of forward voltage is
low value of forward current generated will be high. It
can operate in forward biased as well as in reverse biased.
 Due to high doping, it can operate in reverse biased. Due
to the reduction in barrier potential, the value of reverse
breakdown voltage also reduces.
 It reaches a value of zero. Due to this small reverse
voltage leads to diode breakdown. Hence, this creates
negative resistance region.

Electron Devices
V I CHARACTERISTICS OF TUNNEL DIODE

 Due to forward
biasing, because of
heavy doping
conduction happens in
the diode.

 The maximum current

that a diode reaches is
Ip and voltage applied
is Vp.

 The current value

decreases, when more
amount of voltage is
applied.
 Current keeps decreasing until
it reaches a minimal value.

Electron Devices
 Unbiased Tunnel diode

Under zero bias, the electron will not have sufficient energy to
move into P side through the junction. Hence the forward current
is zero and the energy level will be same throughout the material.

Electron Devices
Tunnel diode under forward biased condition

• When forward bias increases with small applied potential,

energy level of the N side increases.
• The electron in the conduction band of the N side will see empty
energy level on the P side. This makes the tunneling to happen
from the N side to the P side

• When the forward bias is further increased the tunneling will

decreases.
• At particular voltage there will be no empty state and few
electrons in the N side are opposite to the P side energy level.
• Hence current drops to zero. This phenomenon of decrease in
current due to increase in voltage is known as negative resistance
characteristics.
• The diode will behave as a normal PN junction diode after some
particular voltage

Electron Devices
 Tunnel diode under forward biased condition

• When the voltage increases, the current increases till the

peak point is reached. The voltage & current at this
particular peak point is known as peak voltage (VP) and
peak current (IP)

• After this point current decreases with increase in the

applied voltage. This phenomenon of decrease in the
current when the voltage increases takes place till the point
known as valley point. This Region from the peak point to
the valley point is known as Negative resistance Region.

• The voltage and current at valley point is known as valley

voltage (Vv) and valley current (IV)

• After this point, the tunnel diode will behave as a normal PN

junction diode.

Electron Devices
 Applications of Tunnel diode
• Used in Relaxation oscillator, an amplifier and
microwave oscillator due to the negative
Resistance characteristics (which Requires a
few mw of power).

• High speed switch circuits.

• Memory element.

• Since it shows a fast response, it is used as high frequency

component. Tunnel diode acts as logic memory storage device.

• They are used in oscillator circuits, and in FM receivers.

Since it is a lowcurrent device, it is not used more.

Electron Devices
Advantages & Disadvantages of
Tunnel diode
Advantages
• Low cost.
• Simple to operate and maintain.
• Need low power and less noise.
• Exhibit high speed due to the fact that tunneling takes
place at the speed of light.

Disadvantages:
• Tunnel diodes cannot be fabricated in large numbers
• Being a two terminal device, the input and output are
not isolated from one another

Electron Devices
Tuning LC circuit in microwave frequency multipliers(Tunnel diode) :

The equivalent circuit of the tunnel diode when biased in the negative
resistance region is as shown in Fig. In the circuit, Rsis the series
resistance and Ls is the series inductance which may be ignored except
at highest frequencies. The resulting diode equivalent circuit is thus
reduced to parallel combination of the junction capacitance Cj and the Ls
R
negative resistance Rn. Typical values of the circuit components are s

RS=6W,LS=0.1n H ,CJ=0.6p F and Rn=75W.

–Rn
APPLICATIONS
1. Tunnel diode is used as an ultra-high speed switch with switching speed of the order of ns or ps
2. As logic memory storage device
3. As microwave oscillator
4. In relaxation oscillator circuit
5. As an amplifier

1. Low noise
2. Ease of operation
3. High speed
4. Low power

1. Voltage range over which it can be operated is 1 V less

2. Being a two terminal device, there is no isolation between the input and output circuit.

Electron Devices
 References
1. Millman J. , Halkias C. C. "Electronic Devices and Circuits ",
Tata McGraw Hill, New Delhi, 2011.
2. Salivahanan.S, Suresh kumar.N and Vallavaraj.A, “Electronic
Devices and Circuits”, Second Edition, TMH, New Delhi, 2008.
3. Robert Boylestad and Louis Nashelsky, “Electron Devices and
Circuit Theory”, Pearson Prentice Hall, Tenth Edition, 2008.
4. Streetman Ben G. and Banerjee Sanjay, “Solid State Electronic
devices”, PHI, Sixth Edition, 2006
5. David A. Bell, “Electronic Devices and Circuits”, Oxford
University Press, Fifth Edition, 2008

Electron Devices