Lecture 7a

EE-215 Electronic Devices and Circuits

Dr. Muhammad Anis Chaudhary

Small-Signal Operation and Models

Small-Signal Equivalent Circuit Models

• we had already seen the small-signal equivalent circuit model (hybrid-π model) for an NMOS
transistor

Small-Signal Operation and Models

Small-Signal Equivalent Circuit Models

• also for PMOS transistor, the MOSFET acts as a voltage controlled current source.

• thus the small-signal model for the p-channel MOSFET can be given as

EE-215 Electronic Devices and Circuits, Dr. M Anis Ch, Lecture 7a Page 1 of 17
Small-Signal Operation and Models
Small-Signal Equivalent Circuit Models

• In the small-signal model of PMOS transistor,

– if we substitute, vsg = −vgs

– =⇒ gm vsg = −gm vgs
– i.e. if the control voltage polarity is reversed, then the dependent current direction is also
reversed.

• also vsd = −vds

Small-Signal Operation and Models

Small-Signal Equivalent Circuit Models

• thus the resultant equivalent circuit (fig b) for the PMOS transistor is exactly the same as that
of the NMOS transistor

• we conclude that the small-signal equivalent circuit model (hybrid-π model) is

– exactly the same for both the NMOS and the PMOS transistors

EE-215 Electronic Devices and Circuits, Dr. M Anis Ch, Lecture 7a Page 2 of 17
Small-Signal Operation and Models
The T Equivalent-Circuit Model

Small-Signal Operation and Models

The T Equivalent-Circuit Model

• A simple circuit transformation can lead to an alternative

– equivalent circuit model for a MOSFET

• we start with the hybrid-π model

• here we have placed a 2nd gm vgs current source in series with the original controlled source.

• Note that, this new current source doesnot change the terminal currents and is thus allowed

Small-Signal Operation and Models

The T Equivalent-Circuit Model

• the new node X, can be connected to the gate.

• As because of KCL, still the gate current ig = 0 .

• so the gate current is still zero (i.e. this connection doesnot change the terminal characteristics)

EE-215 Electronic Devices and Circuits, Dr. M Anis Ch, Lecture 7a Page 3 of 17
Small-Signal Operation and Models
The T Equivalent-Circuit Model

• Note that, here we have a controlled current source gm vgs

– whose current is controlled by the control voltage vgs

– where vgs is across itself
vgs 1
• =⇒ this current source can be replaced by a resistor of value gm vgs = gm

Small-Signal Operation and Models

The T Equivalent-Circuit Model

EE-215 Electronic Devices and Circuits, Dr. M Anis Ch, Lecture 7a Page 4 of 17
 • Note that the resistance between the gate and the source,

– looking in to the source terminal is 1/gm

– and looking in to the gate terminal is infinite

Small-Signal Operation and Models

The T Equivalent-Circuit Model

• if the channel-length modulation effect cannot be ignored,

– we can include ro in the T-model between the drain and the source terminal

EE-215 Electronic Devices and Circuits, Dr. M Anis Ch, Lecture 7a Page 5 of 17
Small-Signal Operation and Models
The T Equivalent-Circuit Model

• Also we can have an alternative representation of the T model,

– where we can replace the voltage-controlled current source by

– a current controlled current source

Small-Signal Operation and Models

EE-215 Electronic Devices and Circuits, Dr. M Anis Ch, Lecture 7a Page 6 of 17
Small-Signal Operation and Models
Example 5.11

• Figure 5.42(a) shows a MOSFET amplifier biased by a constant-current source I. Assume

that the values of I and RD are such that the MOSFET operates in the saturation region. The
input signal vi is coupled to the source terminal by utilizing a large capacitor CC1 . Similarly,
the output signal at the drain is taken through a large coupling capacitor CC2 . Find the input
resistance Rin and the voltage gain vo ⁄vi . Neglect channel-length modulation.

EE-215 Electronic Devices and Circuits, Dr. M Anis Ch, Lecture 7a Page 7 of 17
Small-Signal Operation and Models
Example 5.11
vo
• here λ = 0 , Rin =? , Av = vi =?

• as an ac source is connected at the source terminal of the MOSFET, it is more convenient to use
T-model.

• thus for ac analysis,

– suppress dc sources i.e. VDD is replaced by short circuit

* and I is replaced by an open circuit
– CC1 , CC2 are replaced by short circuits
– MOSFET is replaced by its T-model

EE-215 Electronic Devices and Circuits, Dr. M Anis Ch, Lecture 7a Page 8 of 17
Small-Signal Operation and Models
Example 5.11

Small-Signal Operation and Models

Example 5.11
vgs 1
• as i = gm and vgs = −vi

−vi 1
– =⇒ i = gm

vi vi −vi 1
• and Rin = ii = −i = i = gm

EE-215 Electronic Devices and Circuits, Dr. M Anis Ch, Lecture 7a Page 9 of 17
 • by ohm’s law at RD

– vo = (−i) RD
vgs
– As i = 1/gm = gm vgs

• =⇒ vo = −gm vgs RD

• or vo = −gm (−vi ) RD ∵vgs = −vi

vo
• vo = gm vi RD =⇒ Av = vi = gm RD

Basic MOSFET Amplifier Configurations

Basic MOSFET Amplifier Configurations

Basic MOSFET Amplifier Configurations

Basic MOSFET Amplifier Configurations

• we have already determined that

– almost-linear amplification can be obtained by

– biasing the MOSFET at a suitable point Q in
– its saturation region of operation
– and by keeping the signal vgs small

EE-215 Electronic Devices and Circuits, Dr. M Anis Ch, Lecture 7a Page 10 of 17
Basic MOSFET Amplifier Configurations

Basic MOSFET Amplifier Configurations

EE-215 Electronic Devices and Circuits, Dr. M Anis Ch, Lecture 7a Page 11 of 17
Basic MOSFET Amplifier Configurations

• Also when vgs is small, the MOSFET can be replaced by its small-signal circuit model (either
hybrid-π model or the T-model)

• the resultant ac circuit can be used to determine the amplifier parameters like

– the voltage gain,

– the input resistance
– and the output resistance

Basic MOSFET Amplifier Configurations

Basic MOSFET Amplifier Configurations

The Three Basic Configurations

Basic MOSFET Amplifier Configurations

The Three Basic Configurations

• There are three basic configurations for connecting the MOSFET as an amplifier, namely

– the Common Source (CS) Amplifier

EE-215 Electronic Devices and Circuits, Dr. M Anis Ch, Lecture 7a Page 12 of 17
 – the Common Gate (CG) Amplifier
– The Common Drain (CD) Amplifier (also called Source Follower)

• Each of these configurations is obtained by

– connecting one of the three MOSFET terminals to ground

– thus creating a two-port network with the grounded terminal
– being common to the input and output ports

• The resulting three configurations with biasing arrangement ommited are shown in fig

Basic MOSFET Amplifier Configurations

Basic MOSFET Amplifier Configurations

The Three Basic Configurations
Common Source Amplifier

• here the source terminal is connected to ground,

• the input voltage is applied at the gate (w.r.t ground),

• the output voltage is taken at the drain (w.r.t ground)

EE-215 Electronic Devices and Circuits, Dr. M Anis Ch, Lecture 7a Page 13 of 17
 • this configuration is called the grounded source or the common source (CS) amplifier

• Note that dc biasing circuit is not shown in figure

Basic MOSFET Amplifier Configurations

The Three Basic Configurations
Common Gate Amplifier

• The common gate (CG) or grounded gate amplifier is obtained

• by connecting the gate to ground,

• applying the input between the source and ground

• taking the output vo between the drain and ground

• Note that dc biasing circuit is not shown in figure

Basic MOSFET Amplifier Configurations

The Three Basic Configurations
Common Drain Amplifier

• The common drain (CD) or grounded drain amplifier is obtained

EE-215 Electronic Devices and Circuits, Dr. M Anis Ch, Lecture 7a Page 14 of 17
 • by connecting the drain terminal to ground,
• applying the input between the gate and ground
• taking the output vo between the source and ground

• Note that dc biasing circuit is not shown in figure

• the Common Drain amplifier is also called Source Follower

Basic MOSFET Amplifier Configurations

Characterizing Amplifiers

Basic MOSFET Amplifier Configurations

Characterizing Amplifiers
• lets take a look at how to characterize the performance of an amplifier as a circuit building block
• here an amplifier is fed with a signal source

– having an open-circuit voltage vsig and an internal resistance Rsig

• this voltage source (vsig , Rsig ) can be an actual signal source

– or in a cascade amplifier, it can be the Thevenin equivalent of the output circuit of the
preceeding amplifier.

• the load resistor RL is connected at the output terminal of the amplifier

– this RL can be an actual load resistor

– or the input resistance of a succeeding amplifier stage in a cascade amplifier

EE-215 Electronic Devices and Circuits, Dr. M Anis Ch, Lecture 7a Page 15 of 17
Basic MOSFET Amplifier Configurations
Characterizing Amplifiers
• The amplfier block can be replaced by its equivalent circuit model

• the input resistance Rin

– indicate the loading effect of the amplifier input on the signal source
vi
– and is given as Rin = ii

• by voltage divider rule

Rin
– vi = Rin +Rsig vsig

Basic MOSFET Amplifier Configurations

Characterizing Amplifiers

Rin
• vi = Rin +Rsig vsig

• Avo is the open-circuit voltage gain and is defined as

vo
– Avo = vi R =∞
L

Basic MOSFET Amplifier Configurations

Characterizing Amplifiers

EE-215 Electronic Devices and Circuits, Dr. M Anis Ch, Lecture 7a Page 16 of 17
 • the 3rd parameter that is essential to characterize an amplifier is the output resistance Ro

– Ro is the resistance seen looking back into the amplfier output terminal with vi set to zero
vx
– =⇒ Ro = ix

• Note that the controlled source Avo vi and the output resistance Ro

– represent the Thevenin equivalent of the amplifier output circuit.

Basic MOSFET Amplifier Configurations

Characterizing Amplifiers

• by voltage divider

– the output voltage vo can be given as

RL
– vo = RL +Ro (Avo vi ) =⇒ vo
vi = Avo RLR+R
L
o

• thus the voltage gain of the amplifier is

– Av = vo
vi = Avo RLR+R
L
o

• the overall voltage gain is

vi
– Gv = vo
vsig = Avo RLR+R
L
o vsig
Rin Rin
– Gv = Avo RLR+R
L
o Rin +Rsig
∵vi = Rin +Rsig vsig

Basic MOSFET Amplifier Configurations

The Common-Source (CS) Amplifier

EE-215 Electronic Devices and Circuits, Dr. M Anis Ch, Lecture 7a Page 17 of 17