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Lecture 1 and 2

The document provides information about the Electronic Devices and Circuits course (EE 215) taught by Assoc Prof. Dr. Zeeshan Zahid, including prerequisites, grading criteria, and recommended textbooks. It outlines key topics such as semiconductor materials, current flow, and the characteristics of PN junctions. The course emphasizes the applications of semiconductor devices in circuits.

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Cynosure Wolf
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11 views17 pages

Lecture 1 and 2

The document provides information about the Electronic Devices and Circuits course (EE 215) taught by Assoc Prof. Dr. Zeeshan Zahid, including prerequisites, grading criteria, and recommended textbooks. It outlines key topics such as semiconductor materials, current flow, and the characteristics of PN junctions. The course emphasizes the applications of semiconductor devices in circuits.

Uploaded by

Cynosure Wolf
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Assoc Prof. Dr.

ZEESHAN ZAHID 1
Course Information
 Course Title: Electronic Devices and Circuits
 Course Code: EE 215
 Credit Hours: 3+1
 Pre-Requisite: Linear Circuit Analysis, Electrical
Network Analysis
 Grading Criteria (Theory):
10% 4× Quizzes
10% 3× Assignments
10% Complex Eng. Problem
30% Midterm
40% Final Exam
2
Assoc Prof Dr. Zeeshan Zahid, EE 215, MCS
Literature
 Textbook:
Microelectronic Circuits (7th ed.) by Sedra & Smith
Reference Book:
(1) Thomas L. Floyd, Electronics devices: Conventional
current version, 10th edition, Wiley, 2018.

(2) Razavi, B., Fundamentals of Microelectronics, 3rd


edition, Wiley, 2021.
Office:
1st floor, Iftikhar Block (Next to seminar hall)

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Assoc Prof Dr. Zeeshan Zahid, EE 215, MCS
Course contents

Final

4
Assoc Prof Dr. Zeeshan Zahid, EE 215, MCS
Introduction
 The course is focused on the circuit applications of
semiconductor devices, such as diodes and transistors
 Types of materials in terms of electrical properties
1. Conductors, 2. Semi-conductors 3. Insulators
 Properties of semiconductor materials can be understood
using the atomic configurations
 Bohr’s atomic model

5
Assoc Prof Dr. Zeeshan Zahid, EE 215, MCS
Revision of concepts
 Atomic number
 Valence shell and valence electrons
 Ion and Ionization
 Core of atom (atom without valance shell)
 Covalent bonds

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Assoc Prof Dr. Zeeshan Zahid, EE 215, MCS
Intrinsic semiconductors
 Atoms combine to form solid crystal material arrange in
symmetrical pattern
 Solids are held by covalent bonds
 The bonds are held by sharing electrons
 Bonds break at higher temp.

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Assoc Prof Dr. Zeeshan Zahid, EE 215, MCS
Doped semiconductors
 Process of adding impurities to enhance carrier
concentration in semiconductors is called doping
 Hole density = p, electron density = n

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Assoc Prof Dr. Zeeshan Zahid, EE 215, MCS
Current flow in semiconductors
 Two types of currents in semiconductors are drift current
and diffusion current
 Drift current:
 When an electrical field E is established in a semiconductor crystal, holes are
accelerated in the direction of E, and free electrons are accelerated in the
direction opposite to that of E.
 Vdrift = μpE
 Vdrift = -μnE
 J = ρVdrift
 J = qpμpE + qnμnE
 J = q(pμp + nμn)E
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Assoc Prof Dr. Zeeshan Zahid, EE 215, MCS
Current flow in semiconductors
 Diffusion current:
 Diffusion current occurs when the density of charge carriers in a piece of semiconductor
is not uniform.

Dp and Dn are diffusion constants


10
Assoc Prof Dr. Zeeshan Zahid, EE 215, MCS
Majority and minority carriers
 Holes in p region and electrons in n region are called
majority carriers
 Thermally generated electrons in p region and holes in n
region are called minority carriers

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Assoc Prof Dr. Zeeshan Zahid, EE 215, MCS
PN Junction
 The junction consists of a p-type semiconductor (e.g.,
silicon) brought in close contact with an n-type material
 In practice, both the p and n regions are part of the same
silicon crystal
 The pn junction is used as a diode, these constitute the
diode terminals and are therefore labeled “anode” and
“cathode”.

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Assoc Prof Dr. Zeeshan Zahid, EE 215, MCS
PN Junction in open circuit
 Holes diffuse across the junction from the p side to the n
side because of difference in concentration
 Depletion region
 ID = diffusion current
 IS = drift current
 Junction built-in voltage
 0.6 V – 0.9 V

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Assoc Prof Dr. Zeeshan Zahid, EE 215, MCS
PN Junction in forward bias
 VF applied as shown

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Assoc Prof Dr. Zeeshan Zahid, EE 215, MCS
PN Junction in reverse bias
 VF applied as shown

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Assoc Prof Dr. Zeeshan Zahid, EE 215, MCS
VI characteristics of PN junction
 Non-linear characteristics

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Assoc Prof Dr. Zeeshan Zahid, EE 215, MCS
PN Junction in breakdown
 Higher reverse bias voltage

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Assoc Prof Dr. Zeeshan Zahid, EE 215, MCS

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