Imam Mohammad Ibn Saud Islamic University

College of Engineering
Electrical Department

EE223
Fundamentals of Electronic Devices
 Formula Sheet

−𝐸𝑔
𝑘𝑇 𝑑 𝑥
𝑛𝑖 = 𝐵𝑇 3Τ2 𝑒 2𝑘𝑇 , 𝑉𝑇 = , 𝑉𝑇 𝑎𝑡 300 𝐾 = 26 𝑚𝑉, 𝐽 = 𝐸𝑞(𝑝𝜇𝑝 + 𝑛𝜇𝑛 ), 𝐽 = 𝑞𝐷 ,
𝑞 𝑑𝑥
𝐷𝑛 𝐷𝑝
= 𝜇 = 𝑉𝑇
𝜇𝑛 𝑝

2𝜀𝑠 1 1 𝑁𝑎 𝑁𝑑 𝐶𝐽0 𝜏𝑇
𝑊= +𝑁 𝑉𝑏𝑖 , 𝑄𝐽 = 𝐴𝑞𝑊 , 𝐶𝐽 = , 𝐶𝑑 = 𝐼𝐷
𝑞 𝑁𝑎 𝑑 𝑁𝑎 +𝑁𝑑 𝑉
1+𝑉 𝑅 𝑉𝑇
𝑏𝑖
𝑣𝐷
𝑞𝜀𝑠 𝑁𝑑 𝑁𝑎 1 𝐷𝑝 𝐷𝑛
𝐶𝐽0 = 𝐴 2 𝑁𝑑 +𝑁𝑎 𝑉𝑏𝑖
, 𝑖𝐷 = 𝐼𝑠 𝑒 𝑛𝑉𝑇 − 1 , 𝐼𝑠 = 𝐴𝑞𝑛𝑖2 𝐿𝑝 𝑁𝐷
+𝐿
𝑛 𝑁𝐴

𝑘 = 86 × 10−6 𝑒𝑉Τ𝐾 = 1.38 × 10−23 𝐽Τ𝐾 , 𝑞 = 1.68𝑥10−19 𝐶

For Si at temperature equals 300 K:
𝐸𝑔 = 1.1 𝑒𝑉, 𝐵 = 5.23 × 1015 𝑐𝑚−3 𝐾 −3Τ2 , 𝜀𝑠 = 1.04 × 10−12 𝐹ൗ𝑐𝑚 ,
𝑐𝑚 2 𝑐𝑚 2
𝑛𝑖 = 1.5 × 1010 𝑐𝑚−3 , 𝜇𝑛 = 1350 ൗ𝑉. 𝑠 , 𝑎𝑛𝑑 𝜇𝑝 = 480 ൗ𝑉. 𝑠
 Semiconductor Materials and Properties

Q1: Calculate the intrinsic carrier concentration in silicon at T = 300 K.

Q2: Calculate the intrinsic carrier concentration in gallium arsenide at T = 300 K.

𝑘 = 86 × 10−6 𝑒𝑉 Τ𝐾
 Semiconductor Materials and Properties

Sol1:
T= 300 K
−𝐸𝑔
3Τ2 2𝑘𝑻
𝑛𝑖 = 𝐵𝑻 𝑒
−1.1
15 3 Τ2 2(86 × 10−6 )(300)
𝑛𝑖 = (5.32 × 10 )(300) 𝑒

𝑛𝑖 = 1.5 × 1010 𝑐𝑚−3

Sol2: T=300 K
−𝐸𝑔
3 Τ2 2𝑘𝑻
𝑛𝑖 = 𝐵𝑻 𝑒
−1.4
14 3 Τ2 2(86 × 10−6 )(300)
𝑛𝑖 = (2.1 × 10 )(300) 𝑒

𝑛𝑖 = 1.8 × 106 𝑐𝑚−3

𝑘 = 86 × 10−6 𝑒𝑉 Τ𝐾
 Semiconductor Materials and Properties
Q3: Calculate the thermal equilibrium electron and hole concentrations.

(a) Consider silicon at T = 300 K doped with phosphorus at a concentration of 1016 𝑐𝑚−3 .

(b) Consider silicon at T = 300 K doped with boron at a concentration of 5 × 1016 𝑐𝑚−3 .
 Semiconductor Materials and Properties

Sol: (a) T= 300 K and 𝑁𝑑 = 1016 𝑐𝑚−3

𝑛 ≈ 𝑁𝑑 = 1016 𝑐𝑚−3
𝑛𝑖2 1.5 × 1010 2
𝑝= = 16
= 2.25 × 104 𝑐𝑚−3
𝑁𝑑 10

(b) T= 300 K and 𝑁𝑎 = 5 × 1016 𝑐𝑚−3

𝑝 ≈ 𝑁𝑎 = 5 × 1016 𝑐𝑚−3
𝑛𝑖2 1.5 × 1010 2
𝑛= = 16
= 4.5 × 103 𝑐𝑚−3
𝑁𝑎 5 × 10
 Semiconductor Materials and Properties
Q4: Calculate the drift current density for a silicon at T = 300 K doped with arsenic atoms at a concentration
2 2
of 8 × 1015 𝑐𝑚−3 . Assume electron and hole mobility values are 1350 𝑐𝑚 ൗ𝑉.𝑠 and 480 𝑐𝑚 ൗ𝑉.𝑠. Assume the
applied electric field is 100 V/cm.
 Semiconductor Materials and Properties

Sol: T=300 K, 𝑁𝑑 = 8 × 1015 𝑐𝑚−3

2 2
𝜇𝑛 = 1350 𝑐𝑚 ൗ𝑉.𝑠, 𝜇𝑝 = 480 𝑐𝑚 ൗ𝑉.𝑠, and E= 100 V/cm

𝑛 ≈ 𝑁𝑑 = 8 × 1015 𝑐𝑚−3
𝑛𝑖2 1.5 × 1010 2
𝑝= = 15
= 2.81 × 104 𝑐𝑚−3
𝑁𝑑 8 × 10
𝐽 = 𝐸𝜎 OR 𝐽 = 𝐸Τ𝜌
𝜎 = 𝑞(𝑝𝜇𝑝 + 𝑛𝜇𝑛 )
𝜎 = 1.68 × 10−19 2.81 × 104 480 + 8 × 1015 1350
= 1.68 × 10−19 13.488 × 106 + 10.8 × 1018
= 1.81 Ω. 𝑐𝑚 −1
𝐽 = 100 × 1.81 = 181 𝐴Τ𝑐𝑚2
 Semiconductor Materials and Properties
Q5: Calculate the diffusion current density for silicon at T = 300 K. Assume the electron concentration
varies linearly from 1012 𝑐𝑚−3 to 1016 𝑐𝑚−3 over the distance from 0 to 3 μm. Assume electron diffusion
2
constant is 35 𝑐𝑚 Τ𝑠.
 Semiconductor Materials and Properties

Sol:

1016
T = 300 K and 𝐷𝑛 = 35 𝑐𝑚2Τ
𝑠
1012
𝑑𝑛 𝑥
𝐽𝑛 = 𝑞𝐷𝑛 0 3 μm
𝑑𝑥
(1016 − 1012 )
𝐽𝑛 = 1.68 × 10−19 35 3 × 10−4 𝑐𝑚
(3 × 10−4 − 0)
𝐽𝑛 = 196 𝐴ൗ 2
𝑐𝑚
 Semiconductor Materials and Properties

Q6: Holes are being steadily injected into a region of n-type silicon. 𝑁𝐷 = 1016 𝑐𝑚−3 , 𝑛𝑖 = 1.5 × 1010 𝑐𝑚−3 ,
2
𝐷𝑝 = 12 𝑐𝑚 Τ𝑠, and W = 50 nm find the density of the current that will flow in the x direction.
 Semiconductor Materials and Properties

Sol:
𝑁𝐷 = 1016 𝑐𝑚−3 , 𝑛𝑖 = 1.5 × 1010 𝑐𝑚−3 , 𝐷𝑝 = 12 𝑐𝑚2Τ , and W = 50 nm
𝑠

𝑛 ≈ 𝑁𝑑 = 1016 𝑐𝑚−3
𝑛𝑖2 1.5 × 1010 2
𝑝𝑛 = = 16
= 2.25 × 104 𝑐𝑚−3
𝑁𝑑 10
𝑑𝑝 𝑥
𝐽𝑝 = −𝑞𝐷𝑝
𝑑𝑥
−19
𝐽𝑝 = − 1.68 × 10 12(−4.5 × 1017 )
𝐽𝑝 = 0.907 𝐴ൗ 2
𝑐𝑚
𝑑𝑝 𝑥 (2.25 × 104 − 108 × 2.25 × 104
=
Since 𝐽𝑝 is positive, the current flows in the x direction 𝑑𝑥
𝑑𝑝 𝑥
(50 × 10−7 − 0)
= −4.5 × 1017
𝑑𝑥
 Semiconductor Materials and Properties
Q7: Find the current that flows in a silicon bar of 10 𝜇𝑚 length having a 5 𝜇𝑚 * 4 𝜇𝑚 cross-section and having
free-electron and hole densities of 104 𝑐𝑚−3 and 1016 𝑐𝑚−3 respectively, when a 1 V is applied end-to-end. Use
2 2
electron mobility value of 1350 𝑐𝑚 ൗ𝑉.𝑠 and hole mobility value of 480 𝑐𝑚 ൗ𝑉.𝑠.
 Semiconductor Materials and Properties

Sol:

𝐽 = 𝐸𝑞 𝑝𝜇𝑝 + 𝑛𝜇𝑛 → 𝐼 = 𝐴𝐸𝑞 𝑝𝜇𝑝 + 𝑛𝜇𝑛

10 𝜇𝑚 = 1 × 10−3 𝑐𝑚

5 𝜇𝑚
4 𝜇𝑚

𝐴 = 5 𝜇𝑚 × 4 𝜇𝑚 = 5 × 10−4 × 4 × 10−4 = 2 × 10−7 𝑐𝑚2

𝑉 1
𝐸= = = 1000 V/cm
𝑙 1 × 10−3

𝐼 = (2 × 10−7 )(1000)(1.68 × 10−19 ) 1016 × 480 + 104 × 1350

𝐼 = 161 𝜇A
 Semiconductor Materials and Properties

Q8: In a phosphorus-doped silicon layer with impurity concentration of 1016 𝑐𝑚−3 , find the hole and electron
concentrations at 27°C
 Semiconductor Materials and Properties

Sol:
T= 27°C = 27+273= 300 K

𝑁𝑑 = 1016 𝑐𝑚−3

𝑛 ≈ 𝑁𝑑 = 1016 𝑐𝑚−3

𝑛𝑖2 1.5 × 1010 2

𝑝= = = 2.25 × 104 𝑐𝑚−3
𝑁𝑑 1016