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GOVERNMENT COLLEGE OF ENGINEERING, JALGAON

(An Autonomous Institute of Government of Maharashtra)
National Highway No.6, Jalgaon -425002

Name of Examination: Final Year B. Tech. Examination: Summer-2020

Course Code and Course Name:
Maximum marks: 60. Duration: 1hour 30 Minutes

Q. No. Problem Statement with four option Marks Single

Correct
Answer
1) Choose the correct statement 1 b
a) MOSFET is a uncontrolled device c) MOSFET is a current
controlled device
b) MOSFET is a voltage controlled d) MOSFET is a temperature
device controlled device
2) Choose the correct statement(s) 1 c
i) The gate circuit impedance of MOSFET is higher than that of a
BJT
ii) The gate circuit impedance of MOSFET is lower than that of a
BJT
iii) The MOSFET has higher switching losses than that of a BJT
iv) The MOSFET has lower switching losses than that of a BJT
a) Both i & ii c) Both i & iv
b) Both ii & iv d) Only ii
3) The controlling parameter in MOSFET is 1 b
a) Vds c) Vgs
b) Ig d) Is
4) In the internal structure of a MOSFET, a parasitic BJT exists between 1 b
the
a) source & gate terminals c) drain & gate terminals
b) source & drain terminals d) there is no parasitic BJT in
MOSFET
5) The output characteristics of a MOSFET, is a plot of 1 b
a) Id as a function of Vgs with Vds c) Ig as a function of Vgs with
as a parameter Vds as a parameter

b) Id as a function of Vds with Vgs d) Ig as a function of Vds with

as a parameter Vgs as a parameter
6) Choose the correct statement 1 b
a) MOSFET suffers from secondary c) MOSFET has high value of
breakdown problems on-state resistance as
compared to other devices
b) MOSFET has lower switching d) All of the mentioned
losses as compared to other devices
7) Choose the correct statement 1 d
a) MOSFET has a positive c) MOSFET is a voltage
 temperature co-efficient controlled device
b) MOSFET has a high gate circuit d) All of the mentioned
impedance
8) How does the MOSFET differ from the JFET? 1 a
a) JFET has a p-n junction c) JFET is small in size
b) They are both the same d) MOSFET has a base
terminal
9) For a MOSFET Vgs=3V, Idss=5A, and Id=2A. Find the pinch of 1 b
voltage Vp
a) 4.08 c) 16.32
b) 8.16 d) 0V
10) The N-channel MOSFET is considered better than the P-channel 1 d
MOSFET due to its
a) low noise levels c) lower input impedance
b) TTL compatibility d) faster operation
11) The output impedance of the follower is _____________ 1 c
a) Low c) Depends on it’s
transconductance and low
b) Very low d) High

12) Neglecting Channel Length Modulation, if the aspect ratio of the 1 a

MOSFET increases, the gain of the follower stage will ________
a) increase c) increases proportionately
b) decrease d) doesn’t get affected
13) Can the voltage gain of a follower stage be greater than 1? 1 b
a) Yes, by changing the c) Yes, by changing the bias
transconductance current
b) No d) Yes, by changing the
supply rail
14) The input impedance of the follower stage is ____________ than that 1 a
of a CG stage?
a) greater c) equal
b) lesser d) cannot be compared
15) The difference output of the basic differential amplifier is taken at 1 d
___________
a) At X and ground c) Difference of the voltages
at the gates of M1 and M2
b) At Y and ground d) Difference of the voltages
between X and Y
16) The Differential output of the difference amplifier is the amplification 1 a
of __________
a) Difference between the voltages c) Difference between the
of input signals supply and the output of the
each transistor
b) Difference between the output of d) All of the mentioned
the each transistor
17) In Common Mode Differential Amplifier, the outputs Vout1 and 1 d
Vout2 are related as:
a) Vout2 is in out of phase with c) Vout1 and Vout2 have
Vout1 with same amplitude same amplitude and are in
phase with each other and
 their respective inputs
b) Vout2 and Vout1 have same d) Vout1 and Vout2 have
amplitude but the phase difference is same amplitude and are in
90 degrees phase with each other but out
of phase with their respective
inputs
18) The input output characteristic of an amplifier is 1 b
a) Linear function c) Sinusoidal function with
change of phase
b) Non Linear function d) None of the mentioned
19) In MOSFET amplifier, the input is applied as: 1 a
a) Voltage across gate and source c) Current at gate
b) Voltage across drain and source d) Current at Drain
20) What is a cascode amplifier? 1 c
a) A cascade of two CE amplifiers
b) A cascade of two CB amplifiers
c) A cascade of CE and CB amplifiers
d) A cascade of CB and CC amplifiers

21) The voltage gain of the MOSFET is given by: 1 c

a) Av = -βRd c) Av = -gmRd
b) Av = γRd d) None of the mentioned
22) The MOSFET is said to be in diode connected configuration if: 1 d
a) A diode is placed between supply c) Source and gate are
and drain connected
b) A diode is placed between source d) Drain and gate are
and ground connected
23) The diode connected MOSFET acts as: 1 d
a) Active element for amplification c) Current Source
b) Voltage source d) Load Impedance
24) The advantage of using source degeneration resistor in Common 1 c
source amplifier is to provide:
a) Huge gain c) Linearity behaviour of
amplifier
b) Non Linearity behaviour of d) Less gain
amplifier
25) Compute the output voltage if the input voltage is reduced to zero in 1 d
differential amplifier with one op-amp?
a) Inverted Voltage c) Amplified inverted voltage
b) Same as the input voltage d) Cannot be determined
26) The difference between the input and output voltage are -1v and 17v. 1 c
Calculate the closed loop voltage gain of differential amplifier with
one op-amp?
a) -51 c) -17
b) 34 d) 14
27) Why differential amplifiers are preferred for instrumentation and 1 d
industrial applications?
a) Input resistance is low c) Amplify individual input
voltage
b) Produce amplified output d) Reject common mode
 voltage
28) Change in value of common mode input signal in differential pair 1 a
amplifier make
a) Change in voltage across collector c) Collector voltage decreases
to zero
b) Slight change in collector voltage d) None of the mentioned
29) How to improve CMRR value 1 b
a) Increase common mode gain c) Increase Differential mode
gain
b) Decrease common mode gain d) Decrease differential mode
gain
30) In practical application of current mirror, early voltage is assumed to 1 a
be
a) Infinite
b) Zero
c) Unity
d) None of the mentioned
a) c)
b) d)
31) A widlar current source is used 1 a
a) to get low value of current
b) to get high value of CMRR
c) to get low voltage of gain
d) to get high value of Output
a) c)
b) d)
32) Which current source exhibits a very high output resistance? 1 b
a) Simple current mirror
b) Wilson current mirror
c) Widlar current mirror
d) All of the mentioned
a) c)
b) d)
33) Which among the following has best immunity to induced noise? 1 c
a) Non-inverting amplifier
b) Inverting amplifier
c) Differential amplifier
d) Voltage follower
a) c)
b) d)
34) Common mode voltage gain of an op-amp is generally 1 c
a) >1
b) =1
c) <1
d) None of the mentioned
a) c)
b) d)
35) In Miller’s theorem, what is the constant K? 1 b
a) Total voltage gain
b) Internal voltage gain
c) Internal current gain
 d) Internal power gain
a) c)
b) d)
36) Which of the following is an expression for gm0? 1 b
a) gm0 = IDSS/Vp
b) gm0 = 2IDSS/|Vp|
c) gm0 = IDSS/5Vp
d) gm0 = IDSS/2Vp
a) c)
b) d)
37) Which of the following is the necessary to hold drain current in 0 for 1 b
n channel E-MOSFET?
a) Vgs > Vt
b) Vgs < Vt
c) Vgs < 2Vt
d) 2Vgs > Vt
a) c)
b) d)
38) In an n-channel E-MOSFET, the current becomes constant in 1 b
saturation region. Which of the following condition depicts this?
a) VDS = 2Vgs-Vt
b) VDS > Vgs-Vt
c) VDS ≤ Vgs-Vt
d) VDS = Vgs
a) c)
b) d)
39) Which of the following is true about n-channel E-MOSFET? 1 a
a) Electrons are the majority charge carries
b) Holes are the majority charge carries
c) Both holes and electrons are present in same ratio
d) Neutrons are the charge carriers
a) c)
b) d)
40) In a MOSFET operating in a saturation region, the channel length 1 d
modulation effect causes
a) An increase in gate-source capacitance
b) Decrease in Trans conductance
c) Decrease in the unity gain cut off
d) Decrease in the output impedance
a) c)
b) d)
41) Which of the following statement is true about enhancement 1 b
MOSFET?
a) It acts as closed switch
b) It acts as open switch
c) It acts as resistor with small resistance
d) Capacitor
a) c)
b) d)
42) Which of the following is true about the common Source amplifier? 1 d
a) It has low input impedance
 b) It has high output impedance
c) Infinite gain
d) Phase reversal voltage output
a) c)
b) d)
43) If gain is need to be stabilized, which of the following element is used 1 c
for a Common source amplifier?
a) Capacitive
b) Inductive
c) Resistive
d) LC tank circuit
a) c)
b) d)
44) Output Impedance of Common Drain Amplifier is______________ 1 d
a) RS+rd
b) RS
c) RS || rd
d) RS||1/gm
a) c)
b) d)

45) Which of the following is true about Common Drain amplifier? 1 d

a) It has low input impedance
b) It has high output impedance
c) Infinite gain
d) Output will be same as input
a) c)
b) d)
46) While choosing the operating conditions, the Vgs value was set lesser 1 a
to Vt. What will the output if the FET is made to work as Source
Follower?
a) 0
b) Same as the input
c) Same as input but phase reversed
d) Cannot be determined
a) c)
b) d)
47) In which of the following configuration does a MOSFET works as an 1 d
amplifier?
a) Common Source (CS)
b) Common Gate (CG)
c) Common drain (CD)
d) All of the mentioned
a) c)
b) d)
48) In which of the following configuration is the input resistance (Ri) not 1 c
equal to zero ideally?
a) Common source configuration
b) Common source configuration with source resistance
c) Common gate configuration
 d) Source follower configuration
a) c)
b) d)
49) The threshold voltage is 1 d
a) Increases on increasing temperature
b) May increase or decrease on increasing temperature depending
upon other factors
c) Temperature independent
d) Decreases on increasing temperature
a) c)
b) d)
50) At ______________ the drain current is no longer related to the Vgs 1 c
by square law relationship.
a) When the temperature is high (around 700 Celsius)
b) When temperature is very low (around -50 Celsius)
c) Velocity saturation
d) None of the mentioned
a) c)
b) d)
51) The current gain of a simple CG stage is approximately ___ 1 b
a) Infinity
b) unity
c) twice
d) 0
a) c)
b) d)
52) What are the units of slew rate? 1 b
a) Second/Volt
b) Volt/second
c) It is a ratio, no units
d) Ohm/second
a) c)
b) d)
53) The other name for Miller Circuit is 1 b
a) Non-Inverting Integrator
b) Inverting Integrator
c) Non-Inverting Differentiator
d) Inverting Differentiator
a) c)
b) d)
54) Determine the slew rate of the amplifier having full power bandwidth 1 a
f0 and the rated output voltage as V0. Given that the input signal is of
sinusoidal nature.
a) 2πf0 V0
b) V0 / 2πf0
c) V0 / f0
d) f0 V0
a) c)
b) d)
55) Which of the following is not limitation of the operational amplifier 1 d
a) Output voltage saturation
 b) Output current limits
c) Slew rate
d) None of the mentioned
a) c)
b) d)
56) When does the op-amp said to operate in common-mode 1 c
configuration?
a) When the input voltage are equal
b) When input voltage is equal to the output voltage
c) When same voltage is applied to both input terminal of an op-amp
d) When different voltage is applied to both input and terminal of an
op-amp
a) c)
b) d)
57) Define the common-mode rejection ratio (CMRR) of op-amp? 1 a
a) CMRR=AD/ACM
b) CMRR=ACM/ AD
c) CMRR=VOCM/ACM
d) CMRR=AD*ACM
a) c)
b) d)
58) In the frequency response plot, the frequency is expressed in 1 b
a) Anti-logarithmic scale
b) Logarithmic scale
c) Linear scale
d) Exponential scale
a) c)
b) d)
59) Which factor is responsible for causing slew rate? 1 d
a) Internal capacitor
b) External resistor
c) None of the mentioned
d) Both internal and external capacitor
a) c)
b) d)
60) In MOSFET amplifier, the input is applied as: 1 a
a) Voltage across gate and source
b) Voltage across drain and source
c) Current at gate
d) Current at Drain
a) c)
b) d)