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Obsolete Product(s) - Obsolete Product(s) : 4A Linear Driver

The L149 is a high-performance linear driver capable of delivering a peak output current of 4A and operating at supply voltages up to ±20V. It features thermal and short circuit protection, a high current gain of 10,000, and a slew rate of 30 V/µs, making it suitable for use with operational amplifiers in closed-loop configurations. The document provides detailed specifications, electrical characteristics, and application information for the L149 device.

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0% found this document useful (0 votes)
7 views6 pages

Obsolete Product(s) - Obsolete Product(s) : 4A Linear Driver

The L149 is a high-performance linear driver capable of delivering a peak output current of 4A and operating at supply voltages up to ±20V. It features thermal and short circuit protection, a high current gain of 10,000, and a slew rate of 30 V/µs, making it suitable for use with operational amplifiers in closed-loop configurations. The document provides detailed specifications, electrical characteristics, and application information for the L149 device.

Uploaded by

miaupisu73
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 6

L149

4A LINEAR DRIVER

■ HIGH OUTPUT CURRENT (4A peak)


■ HIGH CURRENT GAIN (10.000 typ.)
■ OPERATION UP TO ± 20 V
■ THERMAL PROTECTION
■ SHORT CIRCUIT PROTECTION
■ OPERATION WITHIN SOA
■ HIGH SLEW-RATE (30 V/ms)

DESCRIPTION
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Pentawatt V
The L149 is a general purpose power booster in
Pentawatt ® package consisting of a quasi-com-
plentary darlington output stage with the associat-
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ORDERING NUMBER: L149V

ed biasing system an inhibit facility.


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The device is particularly suited for use with an op-
erational amplifier inside a closed loop configura- P r
tion to increase output current.
te
TEST CIRCUIT
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July 2003 1/6


L149

ABSOLUTE MAXIMUM RATINGS


Symbol Parameter Value Unit
VS Supply Voltage ±20 V
Vi Input Voltage V
s
V5 - V4 Upper Power Transistor VCE 40 V
V4 - V3 Lower Power Transistor VCE 40 V
IO DC Output Current 3 A
IO Peak Output Current (internally limited) 4 A
VINH Input Inhibit Voltage - Vs + 5 V
- Vs - 1.5 V
Ptot Total Power Dissipation at Tcase = 75 °C) 25 W

PIN CONNECTION (Top view)

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SCHEMATIC DIAGRAM
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THERMAL DATA
Symbol Parameter Value Unit

Rth-j-case Thermal resistance junction-case max 3 °C/W

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L149

ELECTRICAL CHARACTERISTCS (Tj = 25 °C, VS = ± 16V)


Symbol Parameter Test Condition Min. Typ. Max. Unit

VS Supply Voltage ± 20 V

Id Quiescent Drain Current V S = ± 16V 30 mA

Iin Input current V S = ± 16V; Vi = 0V 200 400 µA

hFE DC current drain VS = ± 16V; IO = 3A 6000 10000 -

GV Voltage gain V S = ± 16V; IO = 1.5A 1 -

VCEsat Saturation voltage (for each IO = 3A 3.5 V


transistor)

VOS Input offset voltage V S = ± 16V 0.3 V

VINH Inhibit input voltage (pins 1-3) ON condition ± 0.3 V

OFF condition ± 1.8


s)V

t(
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RINH Inhibit input resistance 2.0 KΩ

SR Slew rate 30

o d V/µs

B Power bandwidth V O = ± 10V, d = 1%, R L = 8Ω

P r 200 KHZ

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APPLICATION INFORMATION

o
Figure 1. High slew-rate power operational amplifier (SR = 13V/µs)
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3/6
L149

Figure 2. Maximum saturation voltage vs. Figure 5. Distorsion vs. output power (f = 1KHz).
output current.

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Figure 3. Current limiting characteristics.
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Figure 6. Distorsion vs. output power (f = 1KHz).

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Figure 4. Supply voltage rejection vs. Figure 7. Output power vs. supply voltage.
frequency.
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4/6
L149

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX. OUTLINE AND
A 4.8 0.189 MECHANICAL DATA
C 1.37 0.054
D 2.4 2.8 0.094 0.110
D1 1.2 1.35 0.047 0.053
E 0.35 0.55 0.014 0.022
Weight: 2.00gr
E1 0.76 1.19 0.030 0.047
F 0.8 1.05 0.031 0.041
F1 1.0 1.4 0.039 0.055
G 3.2 3.4 3.6 0.126 0.134 0.142
G1 6.6 6.8 7.0 0.260 0.268 0.276
H2 10.4 0.409
H3 10.05 10.4 0.396 0.409
L 17.55 17.85 18.15 0.691 0.703 0.715
L1 15.55 15.75 15.95 0.612 0.620 0.628
L2 21.2 21.4 21.6 0.831 0.843 0.850
L3 22.3 22.5 22.7 0.878 0.886 0.894
L4
L5 2.6
1.29
3.0 0.102
0.051
0.118
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L6
L7
15.1
6.0
15.8 0.594
6.6 0.236
0.622
0.260
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L9
L10
2.1
4.3
2.7
4.8
0.008
0.17
0.106
0.189
d u
M 4.23 4.5 4.75 0.167 0.178 0.187
r o
M1
V4
3.75 4.0 4.25 0.148
40˚ (typ.)
0.157 0.167
P V
Pentawatt
e
let
V5 90˚ (typ.)
Dia 3.65 3.85 0.144 0.152

s o
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L1

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( s M1

A
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Pr
L5
D1
L2 V5
H2

et e L3

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F

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E1
E

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V4

O b H3 G G1

Dia.

F1 F
L9
H2
L10 L4
V4

L7 RESIN BETWEEN
L6 LEADS PENTVME

0015981

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L149

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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences

b s
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not

Oauthorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

STMicroelectronics acknowledges the trademarks of all companies referred to in this document.

The ST logo is a registered trademark of STMicroelectronics


© 2003 STMicroelectronics - All Rights Reserved

STMicroelectronics GROUP OF COMPANIES


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Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
http://www.st.com

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