EEE 425

Lecture 1
EEE 425
Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 1
 EEE 425

Introduction to
Power Electronics
Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 2
 Definition EEE 425

➢ Power electronics is the process of transferring electrical

energy from any source to the load in a controlled manner by
converting or processing it using electronic methods.
➢ Power electronics is one of the most essential branches of
the electronics sector, expanding daily.
➢ Power electronics circuits and systems, previously used in
electronic solutions in industrial areas, have now entered
homes, offices, and vehicles in addition to industry.

Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 3

 Basic Structure EEE 425

➢ The basic structure of a power electronic device is seen as a

block in the figure.
➢ Any power device consists of two parts: the power and
control circuits.
Power Power
Load
Source Circuit

Control
Circuit

Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 4

 History EEE 425

➢ The journey of power electronics started with the speed

control of direct current (DC) motors, widely utilized in
industrial machinery during the 1900s.
➢ Although numerous theoretical studies on the industrial
applications of power electronics were conducted until the
1950s, these concepts could not be implemented in practice
due to the lack of materials available beyond electron tubes.

Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 5

 History EEE 425

➢ The development of semiconductor materials in the early

1950s and the production of circuit elements such as diodes
and transistors using these materials gave momentum to
power electronics applications.
➢ Finally, the discovery of the Thyristor in the early 1960s
was a significant revolution in power electronics.
➢ With the discovery of the Thyristor, applications
previously conducted with electron tubes began to be done
with thyristors.
Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 6
 History EEE 425

➢ The application areas of power electronic circuits, which

became simpler, smaller, and cheaper using thyristors,
started spreading rapidly.
➢ At the same time, many applications that were thought of
but could not be done until then became possible thanks to
thyristors!
➢ The 1960s and 1970s were the golden years of the
thyristor, and power electronic applications spread to every
field.
Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 7
 History EEE 425

➢ From the early 1980s onwards, with the developments in

digital electronics and the development of microprocessors,
new horizons began to open in power electronics.
➢ In line with these developments, studies were started to
develop new power electronics elements as an alternative to
the thyristor, and because of these studies, “Power
Transistors and Power MOSFETs” were developed from
transistors and MOSFETs that had been used in low-power
until then.
Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 8
 History EEE 425

With the development of power transistors, power MOSFETs,

and more advanced versions of these elements, power
electronic circuits and industrial applications that were both
more difficult and more expensive to make using thyristors in
previous years have become
❑ Simpler in structure,
❑ More petite in volume and weight,
❑ More functional,
❑ It could be made and used more cheaply.
Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 9
 Usage Fields of Power Electronics EEE 425

Industry;
1. In energy transmission and distribution
2. In all types of motor control
3. In machine automation
4. In all types of heating and cooling processes
5. In all types of production and assembly industries
6. In all types of power supply and power control systems.

Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 10

 Usage Fields of Power Electronics EEE 425

In Buildings, Offices and Homes:

1. In building automation systems
2. In heating, cooling, ventilation, and security systems
3. In all office equipment
4. In entertainment, sports, and game equipment
5. In medical devices
6. In household appliances such as washing machines,
dishwashers, refrigerators, air conditioners, vacuum cleaners,
etc.
Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 11
 Usage Fields of Power Electronics EEE 425

In Basic Power Circuits

1. All works and applications within the scope of power
electronics are based on four basic circuit structures.
2. These circuit structures convert alternating current (AC) or
direct current (DC) electrical energy to each other or to
different shapes and amplitude levels within themselves.

Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 12

 Usage Fields of Power Electronics EEE 425

In Basic Power Circuits

3. The basic circuit structures of power electronics are shown
in the figure.
Basic power circuits:
Rectifiers
- AC-DC converters,
AC
- AC-AC converters, Choppers SMPS

- DC-DC converters, Invertors

AC / DC
- DC-AC converters ̴/=

Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 13

 AC-DC Convertors (Rectifiers) EEE 425

➢ Rectifiers are one of the basic circuits of power

electronics.
➢ They are used to obtain constant or variable DC voltage
using a single-phase or three-phase AC source.
➢ Rectifiers are divided into two main groups
1. Uncontrolled rectifiers
2. Controlled rectifiers

Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 14

 Rectifiers EEE 425

The figure shows a simple controlled rectifier circuit and

input/output waveforms.
Control

T
Thyristor Input
Source

Load
RL Output
Load

Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 15

 AC-AC Convertors (AC Choppers) EEE 425

Another basic power electronics circuit is AC choppers. It is

used to obtain AC voltage with fixed or variable frequency
and amplitude using a single-phase or three-phase AC source.
AC-AC converters (AC choppers) are divided into two main
groups.
1. AC voltage controllers,
2. Direct frequency converters.

Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 16

 AC-AC Convertors EEE 425

Dynamic Frequency Convertors:

50 Hz - 400 Hz convertors

Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 17

 AC-AC Convertors EEE 425

The figure shows a simple AC voltage controller circuit and

waveforms.
Control

Input
Source

Load
RL Çıkış
Output
(Yük)
Load

Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 18

 AC-AC Convertors EEE 425

Static Frequency Converters

Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 19

 AC-AC Convertors EEE 425

Another device that can be considered under AC/AC converters is the

Uninterruptible Power Supply (UPS). These do not change the
frequency but provide uninterrupted and clean power.

Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 20

 AC-AC Convertors EEE 425

Internal structure and battery group of

UPSs.

Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 21

 DC-DC Convertors EEE 425

DC-DC converters, the third of the basic circuits of power

electronics, are used to obtain fixed or variable DC voltage(s)
by increasing, decreasing, or multiplexing the voltage
received from any DC source.
DC-DC converters are divided into two main groups
1. DC choppers,
2. Switched power supplies (SMPS).

Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 22

 DC-DC Convertors EEE 425

A simple DC chopper circuit is shown in the figure.

Control

Input
Source

Output
Load

Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 23

 DC-AC Convertors (Invertors) EEE 425

Inverters are the last of the basic circuits of power

electronics. They are used to obtain AC voltage with constant
or variable amplitude and frequency by processing the
voltage received from any DC source.
Inverters are divided into two main groups.
1. PWM inverters
2. Resonant inverters

Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 24

 DC-AC Convertors (Invertors) EEE 425

The figure shows a simple series resonant inverter circuit with an RLC
resonant section.

Circuit

Output voltage

Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 25

 DC-AC Convertors (Invertors) EEE 425

A simple PWM inverter circuit is shown in the figure.

Control Voltage

Driver
Freq.

Input
Source

Load Output
Load

Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 26

 EEE 425

Basic Power
Components

Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 27

 Power Components EEE 425

➢ Desired power transformations can be achieved

appropriately with proper power elements used in power
circuits.
➢ Power elements used in power circuits, regardless of the
type of transformation, always close/open the connection
between the source and the load. Therefore, these elements
are operated as a "SWITCH".
➢ Switch structures are fundamental to power electronics
and will be examined here differently.

Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 28

 Switch Types EEE 425

There are three types of switches used in electrical-

electronic power systems. These are
1. Mechanical switches
2. Electromechanical switches
3. Semiconductor switches.
Before explaining these types of switches, discussing the
"ideal switch" structure will be helpful.

Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 29

 Ideal Switch Properties EEE 425

The ideal key is the key that does not cause any loss during its
operation. The ideal key can only exist in two cases. These are
1- Isolation (off),
2- Conduction (on).
There are two types of losses during the operation of the
switches. These losses are:
1- Switching (on-off) losses
2- Conduction losses.
Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 30
 Ideal Switch Properties EEE 425

Ideal switch losses are zero.

Input
Source

Ideal Switch Switch

Input Output
(Source) (Load) current (IA)

Switch
voltage
(VA)
PS=VSxIS
Consumed
Power (PS)

Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 31

 Ideal Switch Properties EEE 425

In this case, the critical parameters related to the ideal key

can be shown in the table. Of course, such a key does not
exist.
On/
Off Dir.

1) Operating voltage(VA)
2) Operating current (IA)

T W O Direction
3) Conduction resistance (Ron)
4) Operating frequency (fA)
5) Switching time (tA)
6) Switching direction.
Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 32
 Ideal Switch Properties EEE 425

As can be seen from the table, six priority parameters are

used for the keys. These are: 1) Operating voltage(V )
A
On/
Off
Dir.
2) Operating current (IA)
3) Conduction resistance (Ron)
4) Operating frequency (fA)

T W O Direction
5) Switching time (tA)
6) Switching direction.
Conduction and switching losses are zero
in an ideal switch because the conduction
internal resistance and transition time are
zero.
Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 33
 Mechanical Switches EEE 425

➢Mechanical switches are used to cut electrical circuits,

such as conventional, and paco switches, etc.
➢ They do not cause any loss during transmission.

Mechanical switches can only be in 2 states.

1. Insulation state (off)
2. Conduction state (on)

Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 34

 Mechanical Switches EEE 425

Mechanical switches are

generally used as on-off Input
Source
components in circuits.
Switch
current (IA)

Switch
voltage PS
(VA)
PS=VSxIS
Consumed
Power (PS)

Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 35

 Mechanical Switches EEE 425

Important parameters related to the mechanical switch are

shown in the table by sample values.
On/
Dir.
Off As the table shows, the mechanical switch's
zero internal resistance will result in zero
T W O Direction
conduction losses.
Also, mechanical switches' frequency and
transition time parameters are unsuitable
for fast switching.
Mechanical switches, such as keys, paco switches, circuit breakers, and
breakers, can be found in various voltages, from a few amperes to several
hundred amperes. Assoc.Prof.Dr.A.G.Pakfiliz
Spring 2025 36
 Electromechanical Switches EEE 425

➢ Electromechanical switches interrupt or change electrical

circuits, such as relays, contactors, breakers, etc.
➢ Electromechanical switches can only be found in 2 cases.
1. Insulation state (off)
2. Conduction state (on)

Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 37

 Electromechanical Switches EEE 425

Electromechanical switches
are generally used as power
Input
switching and automatic Source
power control elements in
circuits. Switch
current (IA)

Switch
voltage PS
(VA)
PS=VSxIS
Consumed
Power (P)
Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 38
 Electromechanical Switches EEE 425

Parameters related to the electromechanical switch are shown in

the table by sample values.
On/
Off
Dir.
➢ If the contacts in electromechanical
switches are clean, the transmission

T W O Direction
losses will also be zero since the “internal
conduction resistance” is zero.
➢ The “frequency” and “transition time”
parameters in electromechanical
switches are also quite bad. Therefore,
they cannot switch quickly.
Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 39
 Electromechanical Switches EEE 425

On/
Dir.
Off
If fast switching is to be done in
electromechanical switches
(assuming it is possible), switching

T W O Direction
losses will be very high because the
"transition time" between states is
very long.

Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 40

 Semiconductor (Static) Switches EEE 425

❑ Semiconductor switches, such as thyristors, transistors,

MOSFETs, etc., are used for high-speed switching in electrical-
electronic circuits.
❑ Most semiconductor switches have three states.
1- Cut-off
2- Saturation
3- Active/linear (amlification).

Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 41

 Semiconductor (Static) Switches EEE 425

These switches can be used as on-off

switches (in the cut-off and
conduction/saturation regions) or Input
amplifying elements (in the linear Source

region). Switch
current
(IA)

Switch
voltage PS
(VA) PC
Consumed
Power (P)

Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 42

 Semiconductor (Static) Switches EEE 425

Important parameters related to the semiconductor switch are

shown in the table using sample values.
On/
Off Dir. ➢ The table shows that the frequency and
transition time parameters are very good in
semiconductor switches. Therefore, high-speed

T W O Direction
switching can be done.
➢ Since the transmission internal resistance is not
zero in a semiconductor switch, the transmission
losses will not be zero as in the others.
➢ The transition time in this switch is very short,
even if fast switching is done, the switching losses
will be low.
Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 43
 Switches in Power Electronics EEE 425

❑ Switches in power conversion processes in power

electronic circuits must perform many on-off operations,
even for a simple conversion process.
❑ For example, diodes must perform 50 on-off operations
in an uncontrolled mains rectifier circuit in 1 second.
❑ In this case, using mechanical or electromechanical
switches with low frequencies is impossible for power
conversion.

Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 44

 Switches in Power Electronics EEE 425

❑ Although the transmission losses for power conversion in

power electronic circuits are higher than mechanical
switches, semiconductor (static) switches with high
operating frequencies and very short transition times are
used.
❑ Mechanical and electromechanical switches are used for
energy supply and cut-off purposes at the input and output
of power circuits.

Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 45

 Semiconductor Power Switches EEE 425

Issues to be Considered When Using Semiconductor Power

Switches:
❑ When using mechanical and electromechanical switches, there
is nothing to be careful about other than placing the switch in the
appropriate place and making the connections correctly.
❑ Apart from these two issues, some operations (precautions)
must be carried out for semiconductor power switches to safely
operate (protect).

Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 46

 Semiconductor Power Switches EEE 425

Precautions to be taken for the protection of the

semiconductor switch:
1. Ensuring the thermal safety of the power switch.
2. Protection of the power switch against sudden changes in
voltage.
3. Protection of the power switch against sudden changes in
current.
If the above precautions are not taken, the power switch will
either fail before regular operation hours or unexpectedly.

Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 47

 Semiconductor Power Switches EEE 425

Diodes: Structure of the diodes

Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 48

 Semiconductor Power Switches EEE 425

Diodes:
(a) Rectifier diode
(b) i-v characteristic
(c) Ideal i-v characteristic
(d) Reverse recovery time trr
(e) Schottky diode (transmission
voltage drop 0.3V, blocking
100V).

Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 49

 Semiconductor Power Switches EEE 425

Thyristor:
➢ The thyristor is the general name of a component family
with three inputs.
➢ Semiconductors belonging to this family:
❖ SCR (silicon-controlled rectifier)
❖ Triac
❖ GTO (gate turn-off thyristor)
❖ MCT (MOS-controlled thyristor)
Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 50
 Semiconductor Power Switches EEE 425

Thyristor Types

SCR symbol Ideal SCR Behavior Triac

Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 51

 Semiconductor Power Switches EEE 425

Thyristor Types

GTO symbol MCT (two symbols)

Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 52

 Semiconductor Power Switches EEE 425

Thyristor’s Structure

Thyristor Symbol Thyristor Structure

Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 53

 Semiconductor Power Switches EEE 425

Thyristor’s Structure

Anode

Gate

Thyristor’s Diode Kathode

Thyristor Structure Equivalent Thyristor’s Symbol
Thyristor’s BJT
Equivalent

Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 54

 Semiconductor Power Switches EEE 425

Anode
Thyristor’s V-I
Characteristics Gate
Cathode
Thyristor’s Symbol

Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 55

 Semiconductor Power Switches EEE 425

DC Thyristor Switching Circuit

This simple “on-off” thyristor triggering circuit uses the thyristor as a
switch to control a DC load. The thyristor is forward biased and is triggered
into conduction by closing the normally-open “ON” push button, S1, which
connects the Gate terminal to the DC supply via the Gate resistor, Rg.
This allows current to flow into the Gate.

If the RG value is too high with respect

to the supply voltage, the thyristor
may not trigger. C

Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 56

 Semiconductor Power Switches EEE 425

DC Thyristor Switching Circuit

Once the circuit has been turned on, it self-latches and stays in
conduction even when the push button is released, provided the load
current is more than the thyristor latching current. Additional push
button operations, S1, will not affect the circuit's state, as once
"latched," the Gate loses all control.
The thyristor is now turned fully "ON"
(conducting), allowing full load circuit
current to flow through the device in the
forward direction. C

Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 57

 Semiconductor Power Switches EEE 425

DC Thyristor Switching Circuit

When S2 opens the normally closed “OFF” push button, it breaks the
circuit, reducing the circuit current flowing through the Thyristor to
zero, thus forcing it to turn “OFF” until another Gate signal is applied.
One disadvantage of this DC thyristor
circuit design is that the mechanical
normally closed “OFF” switch S2 needs to
be big enough to handle the circuit power
C
flowing through both the thyristor and the
lamp when the contacts are opened.
Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 58
 Semiconductor Power Switches EEE 425

Alternative DC Thyristor Switching Circuit

Here, the thyristor switch receives the required terminal voltage and
Gate pulse signal as before, but the larger normally closed switch of
the previous circuit has been replaced by a smaller normally open
switch in parallel with the thyristor.
Activation of switch S2 momentarily applies
a short circuit between the thyristors
Anode and Cathode, stopping the device
C
from conducting by reducing the holding
current to below its minimum value.
Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 59
 Semiconductor Power Switches EEE 425

AC Thyristor Switching Circuit

The above thyristor firing circuit is similar in design to the DC SCR circuit
except for the lack of an additional “OFF” switch and the inclusion of
diode D1, which prevents reverse bias from being applied to the Gate.
During the positive half-cycle of the sinusoidal waveform, the device is
forward-biased.
However, with switch S1 open, zero gate
current is applied to the thyristor, and it
remains “OFF.” On the negative half-cycle,
the device is reverse-biased and will remain
“OFF” regardless of the condition of switch C

S1.
Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 60
 Semiconductor Power Switches EEE 425

AC Thyristor Switching Circuit

If switch S1 is now closed, at the beginning of each positive half-cycle, the
thyristor is “OFF,” but shortly after, there will be a sufficient increase in
positive trigger voltage. Therefore, the current is present at the Gate to turn
the thyristor into conduction, and the lamp is “ON.” The thyristor is now
latched-“ON” for the duration of the positive half-cycle, with the Gate having
no effect and effectively shorted to the Cathode.
This condition continues until the thyristor
automatically turns “OFF” again when the positive
half-cycle ends as the sinusoidal waveform
reaches zero volts at 180o. The Anode current falls
C
below the holding current value.
Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 61
 Semiconductor Power Switches EEE 425

AC Thyristor Switching Circuit

During the next negative half-cycle, the device is “OFF” until the following
positive half-cycle, when the process repeats itself and the thyristor conducts
again if the switch is closed. In this condition, the lamp will receive only half of
the available power from the AC source, as the thyristor acts like a rectifying
diode and conducts current only during the positive half-cycles when it is
forward-biased.

The thyristor continues to supply half power to the

lamp until the switch is opened.

Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 62

 Semiconductor Power Switches EEE 425

GTO
GTO is a semiconductor switching element with three terminals: anode,
cathode, and gate terminals, as seen in the figure below. The name GTO
comes from the words "Gate Turn Off Thyristor." GTO can be driven to cut
off from the gate terminal. A positive current applied from the gate
terminal can put GTO into conduction, and a negative pulse applied to the
gate terminal is sufficient to drive GTO to cut off.

Two gaps are placed at the gate end, as

presented in the symbol of GTO. These arrows
show that it can be used by applying bidirectional
current to the gate terminal.
Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 63
 Semiconductor Power Switches EEE 425

Power Transistors
➢ Transistors are operated as switches in power electronics circuits.
Transistor drive circuits are designed to manage the transistor in
either an on or off state. This situation differs from applications
where the transistor is operated as a linear amplifier circuit,
operating simultaneously in a region with high voltage and current.
➢ Unlike a diode, a transistor can be controlled to turn on and off.
Types of transistors used in power electronic circuits include
MOSFETs, bipolar junction transistors (BJTs), and hybrid devices such
as Insulated Gate Bipolar Junction Transistors (IGBTs).
Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 64
 Semiconductor Power Switches EEE 425

Power Transistors (MOSFET)

Idealized
MOSFET
characteristics

MOSFET properties
MOSFET (N-channel)
NOTE: Usually the enhancement type
is used (not the depletion type)
Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 65
 Semiconductor Power Switches EEE 425

Power Transistors (MOSFET)

MOSFET (N-channel)
Comparison of enhancement type and depletion type
Mosfets
Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 66
 Semiconductor Power Switches EEE 425

Power Transistors (BJT)

BJT (npn) BJT Characteristics Idealized BJT Darlington

Characteristics Configuration

Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 67

 Semiconductor Power Switches EEE 425

Power Transistors (IGBT)

IGBT Equivalent Circuit

NOTE: It has input MOSFET, and
IGBT’s Circuit Models
conduction BJT characteristics.
Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 68
 Switch Selection EEE 425

➢ The selection of a power switch for a particular application

depends on the required voltage, current levels, and switching
characteristics.
➢ Transistors and GTOs provide both on- and off-switching,
while SCRs only do on-switching but cannot off-switching. Diodes
do neither.
➢ Switching speeds and the resulting power losses are very
important in power electronic circuits. The BJT is a minor carrier
device, while the MOSFET is a major carrier device and has an
advantage in switching speeds.
Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 69
 Switch Selection EEE 425

➢ BJT switching time is usually greater than MOSFET switching

time.
➢ Therefore, MOSFET generally has lower switching losses and
is preferred over BJT.
➢ When selecting a suitable switching device, the points to
consider are the operating point (v-i/P) and on and off
characteristics (on/off time and on/off frequency).

Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 70

 Ensuring Thermal Safety of Semiconductor EEE 425

Power Switches
➢ Since semiconductor power switches have a small
conduction resistance, they consume power as long as they
remain in conduction. (I² x R).
➢ Since semiconductor power switches are operated by
making many on-off turns in the circuits, power is consumed
during switching.
➢ These consumed power to cause the element to heat up.

Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 71

 Ensuring Thermal Safety of Semiconductor EEE 425

Power Switches
➢ In semiconductor power switches, performance decreases as
the temperature increases, and the element burns out after a
certain level.
➢ To prevent this adverse situation, the heat energy generated by
the element must be taken and distributed.
➢ A suitable size, “Heatsink-Cooler,” must be used for this
purpose.
➢ As a cooler, specially produced aluminum sheets with leaves
and, if necessary, fans and liquid flow are used.
Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 72
 Protection of Semiconductor Power Switch EEE 425

from Instant Voltage Changes

➢ Semiconductor power switches consist of p and n layers. The
displacement of electrons and holes also conducts the current
transfer process between these layers.
➢ This displacement occurs in cases where current starts to flow in
power switches,
- The element is excited
- It heats up excessively
- High voltage is applied
- There is a sudden voltage change.

Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 73

 Protection of Semiconductor Power Switch EEE 425

from Instant Voltage Changes

As seen in the figure, a Snubber-Voltage smoothing circuit
prevents semiconductor power switches from damaging
themselves and other elements in the circuit by switching on
undesired during sudden voltage changes.

Snubber Circuit
In this way, the rate of change VA-C
of voltage that may occur Semi-
conductor
suddenly can be limited in a Switch
VA-C
level.
Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 74
 Protection of Semiconductor Power Switch EEE 425

from Instant Current Changes

➢ Semiconductor power switches are made using silicon material
with a crystalline structure.
➢ This material has a instant current carrying speed determined
during production.
➢ If the user exceeds this speed determined by the manufacturer, the
material's crystal structure is damaged, and the component burns.
➢ It is necessary to prevent semiconductor power switches from
being damaged and damaging both themselves and other elements in
the circuit due to instant current changes.
Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 75
 Protection of Semiconductor Power Switch EEE 425

from Instant Current Changes

➢ As shown in the figure, a current softener (for smoothing)
circuit is used for this purpose. This reduces the current rate of
change to the desired level.

Current Softener
IA
Semiconductor
Switch

IA

Spring 2025 Assoc.Prof.Dr.A.G.Pakfiliz 76