Random-access memory

Random-access memory (RAM; /ræm/) is a form of electronic computer

memory that can be read and changed in any order, typically used to store working
data and machine code.[1][2] A random-access memory device allows data items to
be read or written in almost the same amount of time irrespective of the physical
location of data inside the memory, in contrast with other direct-access data
storage media (such as hard disks and magnetic tape), where the time required to
read and write data items varies significantly depending on their physical locations Example of writable volatile random-
on the recording medium, due to mechanical limitations such as media rotation access memory: Synchronous
speeds and arm movement. dynamic RAM modules, primarily
used as main memory in personal
In today's technology, random-access memory takes the form of integrated circuit computers, workstations, and
servers.
(IC) chips with MOS (metal–oxide–semiconductor) memory cells. RAM is
normally associated with volatile types of memory where stored information is
lost if power is removed. The two main types of volatile random-access
semiconductor memory are static random-access memory (SRAM) and dynamic
random-access memory (DRAM).

Non-volatile RAM has also been developed[3] and other types of non-volatile
memories allow random access for read operations, but either do not allow write
operations or have other kinds of limitations. These include most types of ROM
and NOR flash memory.

The use of semiconductor RAM dates back to 1965 when IBM introduced the A 64 bit memory chip die, the SP95
monolithic (single-chip) 16-bit SP95 SRAM chip for their System/360 Model 95 Phase 2 buffer memory produced at
computer, and Toshiba used bipolar DRAM memory cells for its 180-bit Toscal IBM mid-1960s, versus memory
BC-1411 electronic calculator, both based on bipolar transistors. While it offered core iron rings
higher speeds than magnetic-core memory, bipolar DRAM could not compete with
the lower price of the then-dominant magnetic-core memory.[4] In 1966, Dr.
Robert Dennard invented modern DRAM architecture in which there's a single
MOS transistor per capacitor.[5] The first commercial DRAM IC chip, the 1K Intel
1103, was introduced in October 1970. Synchronous dynamic random-access
memory (SDRAM) was reintroduced with the Samsung KM48SL2000 chip in
1992.

8GB DDR3 RAM stick with a white

heatsink
History
Early computers used relays, mechanical counters[6] or delay lines for main memory functions. Ultrasonic delay lines
were serial devices which could only reproduce data in the order it was written. Drum memory could be expanded at
relatively low cost but efficient retrieval of memory items requires knowledge of the physical layout of the drum to
optimize speed. Latches built out of triode vacuum tubes, and later, out of discrete transistors, were used for smaller and
faster memories such as registers. Such registers were relatively large and too costly to use for large amounts of data;
generally only a few dozen or few hundred bits of such memory could be provided.

The first practical form of random-access memory was the Williams tube. It stored data as electrically charged spots on
the face of a cathode-ray tube. Since the electron beam of the CRT could read and write the spots on the tube in any order,
memory was random access. The capacity of the Williams tube was a few hundred to around a thousand bits, but it was
much smaller, faster, and more power-efficient than using individual vacuum tube latches. Developed at the University of
Manchester in England, the Williams tube provided the medium on which the first electronically stored program was
implemented in the Manchester Baby computer, which first successfully ran a
program on 21 June, 1948.[7] In fact, rather than the Williams tube memory being
designed for the Baby, the Baby was a testbed to demonstrate the reliability of the
memory.[8][9]

Magnetic-core memory was invented in 1947 and developed up until the mid-
1970s. It became a widespread form of random-access memory, relying on an
array of magnetized rings. By changing the sense of each ring's magnetization,
data could be stored with one bit stored per ring. Since every ring had a
combination of address wires to select and read or write it, access to any memory
location in any sequence was possible. Magnetic core memory was the standard
form of computer memory until displaced by semiconductor memory in integrated
circuits (ICs) during the early 1970s.[10]
These IBM tabulating machines
Prior to the development of integrated read-only memory (ROM) circuits,
from the mid-1930s used
permanent (or read-only) random-access memory was often constructed using
mechanical counters to store
diode matrices driven by address decoders, or specially wound core rope memory information.
planes.

Semiconductor memory appeared in the 1960s with bipolar memory, which used bipolar transistors. Although it was
faster, it could not compete with the lower price of magnetic core memory.[11]

MOS RAM
In 1957, Frosch and Derick manufactured the first silicon dioxide field-effect transistors at Bell Labs, the first transistors
in which drain and source were adjacent at the surface.[12] Subsequently, in 1960, a team demonstrated a working
MOSFET at Bell Labs.[13][14] This led to the development of metal–oxide–semiconductor (MOS) memory by John
Schmidt at Fairchild Semiconductor in 1964.[10][15] In addition to higher speeds, MOS semiconductor memory was
cheaper and consumed less power than magnetic core memory.[10] The development of silicon-gate MOS integrated
circuit (MOS IC) technology by Federico Faggin at Fairchild in 1968 enabled the production of MOS memory chips.[16]
MOS memory overtook magnetic core memory as the dominant memory technology in the early 1970s.[10]

Integrated bipolar static random-access memory (SRAM) was invented by Robert H. Norman at Fairchild Semiconductor
in 1963.[17] It was followed by the development of MOS SRAM by John Schmidt at Fairchild in 1964.[10] SRAM became
an alternative to magnetic-core memory, but required six MOS transistors for each bit of data.[18] Commercial use of
SRAM began in 1965, when IBM introduced the SP95 memory chip for the System/360 Model 95.[11]

Dynamic random-access memory (DRAM) allowed replacement of a 4 or 6-transistor latch circuit by a single transistor
for each memory bit, greatly increasing memory density at the cost of volatility. Data was stored in the tiny capacitance of
each transistor and had to be periodically refreshed every few milliseconds before the charge could leak away.

Toshiba's Toscal BC-1411 electronic calculator, which was introduced in 1965,[19][20][21] used a form of capacitor bipolar
DRAM, storing 180-bit data on discrete memory cells, consisting of germanium bipolar transistors and capacitors.[20][21]
Capacitors had also been used for earlier memory schemes, such as the drum of the Atanasoff–Berry Computer, the
Williams tube and the Selectron tube. While it offered higher speeds than magnetic-core memory, bipolar DRAM could
not compete with the lower price of the then-dominant magnetic-core memory.[22]

In 1966, Robert Dennard, while examining the characteristics of MOS technology, found it was capable of building
capacitors, and that storing a charge or no charge on the MOS capacitor could represent the 1 and 0 of a bit, and the MOS
transistor could control writing the charge to the capacitor. This led to his development of modern DRAM architecture for
which there is a single MOS transistor per capacitor.[18] In 1967, Dennard filed a patent under IBM for a single-transistor
DRAM memory cell, based on MOS technology.[18][23] The first commercial DRAM IC chip was the Intel 1103, which
was manufactured on an 8 μm MOS process with a capacity of 1 kbit, and was released in 1970.[10][24][25]
The earliest DRAMs were often synchronized with the CPU clock (clocked) and
were used with early microprocessors. In the mid-1970s, DRAMs moved to the
asynchronous design, but in the 1990s returned to synchronous operation.[26][27] In
1992 Samsung released KM48SL2000, which had a capacity of 16 Mbit.[28][29]
and mass-produced in 1993.[28] The first commercial DDR SDRAM (double data
rate SDRAM) memory chip was Samsung's 64 Mbit DDR SDRAM chip, released
in June 1998.[30] GDDR (graphics DDR) is a form of DDR SGRAM (synchronous
graphics RAM), which was first released by Samsung as a 16 Mbit memory chip
in 1998.[31] CMOS 1-megabit (Mbit) DRAM chip,
one of the last models developed by
VEB Carl Zeiss Jena, in 1989

Types
The two widely used forms of modern RAM are static RAM (SRAM) and dynamic RAM (DRAM). In SRAM, a bit of
data is stored using the state of a six-transistor memory cell, typically using six MOSFETs. This form of RAM is more
expensive to produce, but is generally faster and requires less dynamic power than DRAM. In modern computers, SRAM
is often used as cache memory for the CPU. DRAM stores a bit of data using a transistor and capacitor pair (typically a
MOSFET and MOS capacitor, respectively),[32] which together comprise a DRAM cell. The capacitor holds a high or low
charge (1 or 0, respectively), and the transistor acts as a switch that lets the control circuitry on the chip read the
capacitor's state of charge or change it. As this form of memory is less expensive to produce than static RAM, it is the
predominant form of computer memory used in modern computers.

Both static and dynamic RAM are considered volatile, as their state is lost or reset when power is removed from the
system. By contrast, read-only memory (ROM) stores data by permanently enabling or disabling selected transistors, such
that the memory cannot be altered. Writable variants of ROM (such as EEPROM and NOR flash) share properties of both
ROM and RAM, enabling data to persist without power and to be updated without requiring special equipment. ECC
memory (which can be either SRAM or DRAM) includes special circuitry to detect and/or correct random faults
(memory errors) in the stored data, using parity bits or error correction codes.

In general, the term RAM refers solely to solid-state memory devices (either DRAM or SRAM), and more specifically the
main memory in most computers. In optical storage, the term DVD-RAM is somewhat of a misnomer since, it is not
random access; it behaves much like a hard disc drive if somewhat slower. Aside, unlike CD-RW or DVD-RW, DVD-
RAM does not need to be erased before reuse.

Memory cell
The memory cell is the fundamental building block of computer memory. The memory cell is an electronic circuit that
stores one bit of binary information and it must be set to store a logic 1 (high voltage level) and reset to store a logic 0
(low voltage level). Its value is maintained/stored until it is changed by the set/reset process. The value in the memory
cell can be accessed by reading it.

In SRAM, the memory cell is a type of flip-flop circuit, usually implemented using FETs. This means that SRAM
requires very low power when not being accessed, but it is expensive and has low storage density.

A second type, DRAM, is based around a capacitor. Charging and discharging this capacitor can store a "1" or a "0" in the
cell. However, the charge in this capacitor slowly leaks away, and must be refreshed periodically. Because of this refresh
process, DRAM uses more power, but it can achieve greater storage densities and lower unit costs compared to SRAM.
 SRAM cell (6 transistors)

DRAM cell (1 transistor and one

capacitor)

Addressing
To be useful, memory cells must be readable and writable. Within the RAM device, multiplexing and demultiplexing
circuitry is used to select memory cells. Typically, a RAM device has a set of address lines , and for each
combination of bits that may be applied to these lines, a set of memory cells are activated. Due to this addressing, RAM
devices virtually always have a memory capacity that is a power of two.

Usually several memory cells share the same address. For example, a 4 bit "wide" RAM chip has four memory cells for
each address. Often the width of the memory and that of the microprocessor are different, for a 32 bit microprocessor,
eight 4 bit RAM chips would be needed.

Often more addresses are needed than can be provided by a device. In that case, external multiplexors to the device are
used to activate the correct device that is being accessed. RAM is often byte addressable, although it is also possible to
make RAM that is word-addressable.[33][34]

Memory hierarchy
One can read and over-write data in RAM. Many computer systems have a memory hierarchy consisting of processor
registers, on-die SRAM caches, external caches, DRAM, paging systems and virtual memory or swap space on a hard
drive. This entire pool of memory may be referred to as "RAM" by many developers, even though the various subsystems
can have very different access times, violating the original concept behind the random access term in RAM. Even within
a hierarchy level such as DRAM, the specific row, column, bank, rank, channel, or interleave organization of the
components make the access time variable, although not to the extent that access time to rotating storage media or a tape
is variable. The overall goal of using a memory hierarchy is to obtain the fastest possible average access time while
minimizing the total cost of the entire memory system (generally, the memory hierarchy follows the access time with the
fast CPU registers at the top and the slow hard drive at the bottom).

In many modern personal computers, the RAM comes in an easily upgraded form of modules called memory modules or
DRAM modules about the size of a few sticks of chewing gum. These can be quickly replaced should they become
damaged or when changing needs demand more storage capacity. As suggested above, smaller amounts of RAM (mostly
SRAM) are also integrated in the CPU and other ICs on the motherboard, as well as in hard-drives, CD-ROMs, and
several other parts of the computer system.

Other uses of RAM

In addition to serving as temporary storage and working space for the operating system and applications, RAM is used in
numerous other ways.
Virtual memory
Most modern operating systems employ a method of extending RAM capacity,
known as "virtual memory". A portion of the computer's hard drive is set aside for
a paging file or a scratch partition, and the combination of physical RAM and the
paging file form the system's total memory. (For example, if a computer has 2 GB
(10243 B) of RAM and a 1 GB page file, the operating system has 3 GB total
memory available to it.) When the system runs low on physical memory, it can
A SO-DIMM stick of laptop RAM,
"swap" portions of RAM to the paging file to make room for new data, as well as
roughly half the size of desktop
to read previously swapped information back into RAM. Excessive use of this RAM
mechanism results in thrashing and generally hampers overall system
performance, mainly because hard drives are far slower than RAM.

RAM disk
Software can "partition" a portion of a computer's RAM, allowing it to act as a much faster hard drive that is called a
RAM disk. A RAM disk loses the stored data when the computer is shut down, unless memory is arranged to have a
standby battery source, or changes to the RAM disk are written out to a nonvolatile disk. The RAM disk is reloaded from
the physical disk upon RAM disk initialization.

Shadow RAM
Sometimes, the contents of a relatively slow ROM chip are copied to read/write memory to allow for shorter access
times. The ROM chip is then disabled while the initialized memory locations are switched in on the same block of
addresses (often write-protected). This process, sometimes called shadowing, is fairly common in both computers and
embedded systems.

As a common example, the BIOS in typical personal computers often has an option called "use shadow BIOS" or similar.
When enabled, functions that rely on data from the BIOS's ROM instead use DRAM locations (most can also toggle
shadowing of video card ROM or other ROM sections). Depending on the system, this may not result in increased
performance, and may cause incompatibilities. For example, some hardware may be inaccessible to the operating system
if shadow RAM is used. On some systems the benefit may be hypothetical because the BIOS is not used after booting in
favor of direct hardware access. Free memory is reduced by the size of the shadowed ROMs.[35]

Memory wall
The 'memory wall is the growing disparity of speed between CPU and the response time of memory (known as memory
latency) outside the CPU chip. An important reason for this disparity is the limited communication bandwidth beyond
chip boundaries, which is also referred to as bandwidth wall. From 1986 to 2000, CPU speed improved at an annual rate
of 55% while off-chip memory response time only improved at 10%. Given these trends, it was expected that memory
latency would become an overwhelming bottleneck in computer performance.[36]

Another reason for the disparity is the enormous increase in the size of memory since the start of the PC revolution in the
1980s. Originally, PCs contained less than 1 mebibyte of RAM, which often had a response time of 1 CPU clock cycle,
meaning that it required 0 wait states. Larger memory units are inherently slower than smaller ones of the same type,
simply because it takes longer for signals to traverse a larger circuit. Constructing a memory unit of many gibibytes with
a response time of one clock cycle is difficult or impossible. Today's CPUs often still have a mebibyte of 0 wait state
cache memory, but it resides on the same chip as the CPU cores due to the bandwidth limitations of chip-to-chip
communication. It must also be constructed from static RAM, which is far more expensive than the dynamic RAM used
for larger memories. Static RAM also consumes far more power.

CPU speed improvements slowed significantly partly due to major physical barriers and partly because current CPU
designs have already hit the memory wall in some sense. Intel summarized these causes in a 2005 document.[37]
 First of all, as chip geometries shrink and clock frequencies rise, the transistor leakage current increases,
leading to excess power consumption and heat... Secondly, the advantages of higher clock speeds are in part
negated by memory latency, since memory access times have not been able to keep pace with increasing
clock frequencies. Third, for certain applications, traditional serial architectures are becoming less efficient
as processors get faster (due to the so-called von Neumann bottleneck), further undercutting any gains that
frequency increases might otherwise buy. In addition, partly due to limitations in the means of producing
inductance within solid state devices, resistance-capacitance (RC) delays in signal transmission are growing
as feature sizes shrink, imposing an additional bottleneck that frequency increases don't address.

The RC delays in signal transmission were also noted in "Clock Rate versus IPC: The End of the Road for Conventional
Microarchitectures"[38] which projected a maximum of 12.5% average annual CPU performance improvement between
2000 and 2014.

A different concept is the processor-memory performance gap, which can be addressed by 3D integrated circuits that
reduce the distance between the logic and memory aspects that are further apart in a 2D chip.[39] Memory subsystem
design requires a focus on the gap, which is widening over time.[40] The main method of bridging the gap is the use of
caches; small amounts of high-speed memory that houses recent operations and instructions nearby the processor,
speeding up the execution of those operations or instructions in cases where they are called upon frequently. Multiple
levels of caching have been developed to deal with the widening gap, and the performance of high-speed modern
computers relies on evolving caching techniques.[41] There can be up to a 53% difference between the growth in speed of
processor and the lagging speed of main memory access.[42]

Solid-state hard drives have continued to increase in speed, from ~400 Mbit/s via SATA3 in 2012 up to ~7 GB/s via
NVMe/PCIe in 2024, closing the gap between RAM and hard disk speeds, although RAM continues to be an order of
magnitude faster, with single-lane DDR5 8000MHz capable of 128 GB/s, and modern GDDR even faster. Fast, cheap,
non-volatile solid state drives have replaced some functions formerly performed by RAM, such as holding certain data for
immediate availability in server farms - 1 terabyte of SSD storage can be had for $200, while 1 TB of RAM would cost
thousands of dollars.[43][44]
Timeline

SRAM

Static random-access memory (SRAM)

Date of Chip Capacity Access
SRAM type Manufacturer(s) Process MOSFET Ref
introduction name (bits) time

Bipolar
March 1963 — 1 ? Fairchild — —
(cell) [11]

? 8 ? Bipolar IBM ? —

SP95 16 ? Bipolar IBM ? — [45]

1965

? 64 ? MOSFET Fairchild ? PMOS [46]

Bipolar [10]
TMC3162 16 ? Transitron ? —
(TTL)
1966
? ? ? MOSFET NEC ? ? [47]

64 ? MOSFET Fairchild ? PMOS

[47]
1968 ? 144 ? MOSFET NEC ? NMOS

512 ? MOSFET IBM ? NMOS [46]

? 128 ? Bipolar IBM ? — [11]

1969
12,000 [48][49][50][51]
1101 256 850 ns MOSFET Intel PMOS
nm

1972 2102 1 kbit ? MOSFET Intel ? NMOS [48]

5101 1 kbit 800 ns MOSFET Intel ? CMOS [48][52]

1974
NMOS [48][53]
2102A 1 kbit 350 ns MOSFET Intel ?
(depletion)

1975 2114 4 kbit 450 ns MOSFET Intel ? NMOS [48][52]

NMOS [48][49]
2115 1 kbit 70 ns MOSFET Intel ?
(HMOS)
1976
NMOS [48][54]
2147 4 kbit 55 ns MOSFET Intel ?
(HMOS)

1977 ? 4 kbit ? MOSFET Toshiba ? CMOS [49]

CMOS [54]
HM6147 4 kbit 55 ns MOSFET Hitachi 3,000 nm
(twin-well)
1978
Texas [49]
TMS4016 16 kbit ? MOSFET ? NMOS
Instruments

16 kbit ? MOSFET Hitachi, Toshiba

1980 ? ? CMOS [55]
64 kbit ? MOSFET Matsushita
Texas [55]
1981 ? 16 kbit ? MOSFET 2,500 nm NMOS
Instruments

Matsushita, [56]
October 1981 ? 4 kbit 18 ns MOSFET 2,000 nm CMOS
Toshiba

NMOS [55]
1982 ? 64 kbit ? MOSFET Intel 1,500 nm
(HMOS)

February 1983 ? 64 kbit 50 ns MOSFET Mitsubishi ? CMOS [57]

1984 ? 256 kbit ? MOSFET Toshiba 1,200 nm CMOS [55][50]

1987 ? 1 Mbit ? MOSFET Sony, Hitachi, ? CMOS [55]

Mitsubishi,
 Toshiba

Texas [58]
December 1987 ? 256 kbit 10 ns BiMOS 800 nm BiCMOS
Instruments
NEC, Toshiba,
15–23
1990 ? 4 Mbit MOSFET Hitachi, ?
ns
Mitsubishi CMOS [55]

12–15
1992 ? 16 Mbit MOSFET Fujitsu, NEC 400 nm
ns

CMOS [59]
December 1994 ? 512 kbit 2.5 ns MOSFET IBM ?
(SOI)
Cache [60]
4 Mbit 6 ns Hitachi 100 nm CMOS
(SyncBurst)
1995 ?
256 Mbit ? MOSFET Hyundai ? CMOS [61]
DRAM

Dynamic random-access memory (DRAM)

Date of Capacity DRAM
Chip name Manufacturer(s) Process MOSFET Area Ref
introduction (bits) type

DRAM [20][21]
1965 — 1 bit Toshiba — — —
(cell)

DRAM [23][47]
1967 — 1 bit IBM — MOS —
(cell)
DRAM [10]
1968 ? 256 bit Fairchild ? PMOS ?
(IC)

DRAM [47]
1969 — 1 bit Intel — PMOS —
(cell)

DRAM [47]
1102 1 kbit Intel, Honeywell ? PMOS ?
(IC)
1970
1103 1 kbit DRAM Intel 8,000 nm PMOS 10 mm2 [62][63][24]

μPD403 1 kbit DRAM NEC ? NMOS ? [64]

1971
General
? 2 kbit DRAM
Instrument
? PMOS 13 mm2 [65]

1972 2107 4 kbit DRAM Intel ? NMOS ? [48][66]

1973 ? 8 kbit DRAM IBM ? PMOS 19 mm2 [65]

1975 2116 16 kbit DRAM Intel ? NMOS ? [67][10]

1977 ? 64 kbit DRAM NTT ? NMOS 35 mm2 [65]

MK4816 16 kbit PSRAM Mostek ? NMOS ? [68]

1979
? 64 kbit DRAM Siemens ? VMOS 25 mm2 [65]

1,000– 34– [65]

1980 ? 256 kbit DRAM NEC, NTT NMOS
1,500 nm 42 mm2

1981 ? 288 kbit DRAM IBM ? MOS 25 mm2 [69]

64 kbit DRAM Intel 1,500 nm CMOS 20 mm2

1983 ? [65]
256 kbit DRAM NTT ? CMOS 31 mm2
January 5, [70][71]
? 8 Mbit DRAM Hitachi ? MOS ?
1984

74– [65][72]
Hitachi, NEC 1,000 nm NMOS
February
? 1 Mbit DRAM 76 mm2
1984
NTT 800 nm CMOS 53 mm2 [65][72]

DPRAM [73][74]
1984 TMS4161 64 kbit Texas Instruments ? NMOS ?
(VRAM)

DPRAM [75][76]
January 1985 μPD41264 256 kbit NEC ? NMOS ?
(VRAM)

June 1986 ? 1 Mbit PSRAM Toshiba ? CMOS ? [77]

NEC 800 nm NMOS 99 mm2

1986 ? 4 Mbit DRAM Texas [65]

100–
Instruments, 1,000 nm CMOS
Toshiba 137 mm2

1987 ? 16 Mbit DRAM NTT 700 nm CMOS 148 mm2 [65]

October 1988 ? 512 kbit HSDRAM IBM 1,000 nm CMOS 78 mm2 [78]

Matsushita, [55]
1991 ? 64 Mbit DRAM Mitsubishi, Fujitsu, 400 nm CMOS ?
Toshiba
 1993 ? 256 Mbit DRAM Hitachi, NEC 250 nm CMOS ?
DPRAM [60]
1995 ? 4 Mbit Hitachi ? CMOS ?
(VRAM)

January 9, NEC 250 nm CMOS ?

? 1 Gbit DRAM [79][60]
1995 Hitachi 160 nm CMOS ?

1996 ? 4 Mbit FRAM Samsung ? NMOS ? [80]

1997 ? 4 Gbit QLC NEC 150 nm CMOS ? [55]

1998 ? 4 Gbit DRAM Hyundai ? CMOS ? [61]

June 2001 TC51W3216XB 32 Mbit PSRAM Toshiba ? CMOS ? [81]

February [55][82]
? 4 Gbit DRAM Samsung 100 nm CMOS ?
2001
SDRAM

Synchronous dynamic random-access memory (SDRAM)

Date of Capacity SDRAM

Chip name Manufacturer(s) Process MOSFET Area Ref
introduction (bits)[83] type

1992 KM48SL2000 16 Mbit SDR Samsung ? CMOS ? [84][28]

MSM5718C50 18 Mbit RDRAM Oki ? CMOS 325 mm2 [85]

1996 N64 RDRAM 36 Mbit RDRAM NEC ? CMOS ? [86]

? 1024 Mbit SDR Mitsubishi 150 nm CMOS ? [55]

1997 ? 1024 Mbit SDR Hyundai ? SOI ? [87]

1998 MD5764802 64 Mbit RDRAM Oki ? CMOS 325 mm2 [85]

March 1998 Direct RDRAM 72 Mbit RDRAM Rambus ? CMOS ? [88]

June 1998 ? 64 Mbit DDR Samsung ? CMOS ? [89][90][91]

64 Mbit DDR Hyundai ? CMOS ? [87]

1998 ?
128 Mbit SDR Samsung ? CMOS ? [92][90]

128 Mbit DDR Samsung ? CMOS ? [90]

1999 ?
1024 Mbit DDR Samsung 140 nm CMOS ? [55]

2000 GS eDRAM 32 Mbit eDRAM Sony, Toshiba 180 nm CMOS 279 mm2 [93]

288 Mbit RDRAM Hynix ? CMOS ? [94]

2001 ?
? DDR2 Samsung 100 nm CMOS ? [91][55]

2002 ? 256 Mbit SDR Hynix ? CMOS ? [94]

EE+GS
eDRAM
32 Mbit eDRAM Sony, Toshiba 90 nm CMOS 86 mm2 [93]

72 Mbit DDR3 Samsung 90 nm CMOS ? [95]

2003 Hynix ? CMOS ? [94]

? 512 Mbit DDR2
Elpida 110 nm CMOS ? [96]

1024 Mbit DDR2 Hynix ? CMOS ? [94]

2004 ? 2048 Mbit DDR2 Samsung 80 nm CMOS ? [97]

EE+GS
eDRAM
32 Mbit eDRAM Sony, Toshiba 65 nm CMOS 86 mm2 [98]

2005 Xenos [99]

80 Mbit eDRAM NEC 90 nm CMOS ?
eDRAM

? 512 Mbit DDR3 Samsung 80 nm CMOS ? [91][100]

2006 ? 1024 Mbit DDR2 Hynix 60 nm

CMOS ? [94]
2008 ? ? LPDDR2 Hynix ?

April 2008 ? 8192 Mbit DDR3 Samsung 50 nm CMOS ?

[101]
2008 ? 16384 Mbit DDR3 Samsung 50 nm CMOS ?

? DDR3 Hynix 44 nm
2009 ? CMOS ? [94]
2048 Mbit DDR3 Hynix 40 nm

16384 Mbit DDR3 Hynix 40 nm CMOS ? [102]

2011 ?
2048 Mbit DDR4 Hynix 30 nm CMOS ? [102]

2013 ? ? LPDDR4 Samsung 20 nm CMOS ? [102]

2014 ? 8192 Mbit LPDDR4 Samsung 20 nm CMOS ? [103]

 2015 ? 12 Gbit LPDDR4 Samsung 20 nm CMOS ? [92]

8192 Mbit LPDDR5 Samsung 10 nm FinFET ? [104]

2018 ?
128 Gbit DDR4 Samsung 10 nm FinFET ? [105]

SGRAM and HBM

Synchronous graphics random-access memory (SGRAM) and High Bandwidth Memory (HBM)

Date of Capacity SDRAM

Chip name Manufacturer(s) Process MOSFET Area Ref
introduction (bits)[83] type

November SGRAM
1994
HM5283206 8 Mbit
(SDR)
Hitachi 350 nm CMOS 58 mm2 [106][107]

December SGRAM
1994
μPD481850 8 Mbit
(SDR)
NEC ? CMOS 280 mm2 [108][109]

SGRAM
1997 μPD4811650 16 Mbit
(SDR)
NEC 350 nm CMOS 280 mm2 [110][111]

September SGRAM [89]

? 16 Mbit Samsung ? CMOS ?
1998 (GDDR)

SGRAM
1999 KM4132G112 32 Mbit
(SDR)
Samsung ? CMOS 280 mm2 [112]

SGRAM [113]
2002 ? 128 Mbit Samsung ? CMOS ?
(GDDR2)

SGRAM
(GDDR2)
2003 ? 256 Mbit Samsung ? CMOS ? [113]
SGRAM
(GDDR3)
SGRAM
March 2005 K4D553238F 256 Mbit
(GDDR)
Samsung ? CMOS 77 mm2 [114]

October SGRAM [115]

? 256 Mbit Samsung ? CMOS ?
2005 (GDDR4)

SGRAM
2005 ? 512 Mbit Hynix ?
(GDDR4)
1024 SGRAM [94]
2007 ? Hynix 60 nm CMOS ?
Mbit (GDDR5)

2048 SGRAM
2009 ? Hynix 40 nm
Mbit (GDDR5)

1024 SGRAM
2010 K4W1G1646G
Mbit (GDDR3)
Samsung ? CMOS 100 mm2 [116]

4096 SGRAM
2012 ?
Mbit (GDDR3) SK Hynix ? CMOS ? [102]

2013 ? ? HBM

SGRAM
March 2016 MT58K256M32JA 8 Gbit
(GDDR5X)
Micron 20 nm CMOS 140 mm2 [117]

June 2016 ? 32 Gbit HBM2 Samsung 20 nm CMOS ? [118][119]

2017 ? 64 Gbit HBM2 Samsung 20 nm CMOS ? [118]

January SGRAM
2018
K4ZAF325BM 16 Gbit
(GDDR6)
Samsung 10 nm FinFET 225 mm2 [120][121][122]

See also

Technology portal
 CAS latency (CL)
Hybrid Memory Cube
Multi-channel memory architecture
Registered/buffered memory
RAM parity
Memory Interconnect/RAM buses
Memory geometry
Chip creep
Read-mostly memory (RMM)
Electrochemical random-access memory

References
1. "RAM" (https://dictionary.cambridge.org/dictionary/english/ram). Cambridge English Dictionary. Retrieved
11 July 2019.
2. "RAM" (https://www.oxfordlearnersdictionaries.com/definition/american_english/ram_2). Oxford Advanced
Learner's Dictionary. Retrieved 11 July 2019.
3. Gallagher, Sean (April 4, 2013). "Memory that never forgets: non-volatile DIMMs hit the market" (https://ars
technica.com/information-technology/2013/04/memory-that-never-forgets-non-volatile-dimms-hit-the-marke
t/). Ars Technica. Archived (https://web.archive.org/web/20170708073138/https://arstechnica.com/informati
on-technology/2013/04/memory-that-never-forgets-non-volatile-dimms-hit-the-market/) from the original on
July 8, 2017.
4. "1966: Semiconductor RAMs Serve High-speed Storage Needs" (https://www.computerhistory.org/silicone
ngine/semiconductor-rams-serve-high-speed-storage-needs/). Computer History Museum.
5. US3387286A (https://patents.google.com/patent/US3387286A), Dennard, Robert H., "Field-effect
transistor memory", issued 1968-06-04
6. "IBM Archives -- FAQ's for Products and Services" (https://web.archive.org/web/20121023184527/http://ww
w-03.ibm.com/ibm/history/reference/faq_0000000011.html). ibm.com. Archived from the original (http://ww
w-03.ibm.com/ibm/history/reference/faq_0000000011.html) on 2012-10-23.
7. Napper, Brian, Computer 50: The University of Manchester Celebrates the Birth of the Modern Computer
(https://web.archive.org/web/20120504133240/http://www.computer50.org/), archived from the original (htt
p://www.computer50.org/) on 4 May 2012, retrieved 26 May 2012
8. Williams, F. C.; Kilburn, T. (Sep 1948), "Electronic Digital Computers", Nature, 162 (4117): 487,
Bibcode:1948Natur.162..487W (https://ui.adsabs.harvard.edu/abs/1948Natur.162..487W),
doi:10.1038/162487a0 (https://doi.org/10.1038%2F162487a0), S2CID 4110351 (https://api.semanticschola
r.org/CorpusID:4110351). Reprinted in The Origins of Digital Computers.
9. Williams, F. C.; Kilburn, T.; Tootill, G. C. (Feb 1951), "Universal High-Speed Digital Computers: A Small-
Scale Experimental Machine" (https://web.archive.org/web/20131117101730/http://www.computer50.org/k
gill/mark1/ssem.html), Proc. IEE, 98 (61): 13–28, doi:10.1049/pi-2.1951.0004 (https://doi.org/10.1049%2Fp
i-2.1951.0004), archived from the original (http://www.computer50.org/kgill/mark1/ssem.html) on 2013-11-
17.
10. "1970: Semiconductors compete with magnetic cores" (https://www.computerhistory.org/storageengine/se
miconductors-compete-with-magnetic-cores/). Computer History Museum. Retrieved 19 June 2019.
11. "1966: Semiconductor RAMs Serve High-speed Storage Needs" (https://www.computerhistory.org/silicone
ngine/semiconductor-rams-serve-high-speed-storage-needs/). Computer History Museum. Retrieved
19 June 2019.
12. Frosch, C. J.; Derick, L (1957). "Surface Protection and Selective Masking during Diffusion in Silicon" (http
s://iopscience.iop.org/article/10.1149/1.2428650). Journal of the Electrochemical Society. 104 (9): 547.
doi:10.1149/1.2428650 (https://doi.org/10.1149%2F1.2428650).
13. KAHNG, D. (1961). "Silicon-Silicon Dioxide Surface Device" (https://doi.org/10.1142/9789814503464_007
6). Technical Memorandum of Bell Laboratories: 583–596. doi:10.1142/9789814503464_0076 (https://doi.
org/10.1142%2F9789814503464_0076). ISBN 978-981-02-0209-5.
14. Lojek, Bo (2007). History of Semiconductor Engineering. Berlin, Heidelberg: Springer-Verlag Berlin
Heidelberg. p. 321. ISBN 978-3-540-34258-8.
15. Solid State Design – Vol. 6 (https://books.google.com/books?id=kG4rAQAAIAAJ&q=John+Schmidt).
Horizon House. 1965.
16. "1968: Silicon Gate Technology Developed for ICs" (https://www.computerhistory.org/siliconengine/silicon-g
ate-technology-developed-for-ics/). Computer History Museum. Retrieved 10 August 2019.
17. US patent 3562721 (https://worldwide.espacenet.com/textdoc?DB=EPODOC&IDX=US3562721), Robert
H. Norman, "Solid State Switching and Memory Apparatus", published 9 February 1971
18. "DRAM" (https://www.ibm.com/ibm/history/ibm100/us/en/icons/dram/). IBM100. IBM. 9 August 2017.
Retrieved 20 September 2019.
19. Toscal BC-1411 calculator (http://collection.sciencemuseum.org.uk/objects/co8406093/toscal-bc-1411-calc
ulator-with-electronic-calculator). Archived (https://web.archive.org/web/20170729145228/http://collection.s
ciencemuseum.org.uk/objects/co8406093/toscal-bc-1411-calculator-with-electronic-calculator) 2017-07-29
at the Wayback Machine, Science Museum, London.
20. "Spec Sheet for Toshiba "TOSCAL" BC-1411" (http://www.oldcalculatormuseum.com/s-toshbc1411.html).
Old Calculator Web Museum. Archived (https://web.archive.org/web/20170703071307/http://www.oldcalcul
atormuseum.com/s-toshbc1411.html) from the original on 3 July 2017. Retrieved 8 May 2018.
21. Toshiba "Toscal" BC-1411 Desktop Calculator (http://www.oldcalculatormuseum.com/toshbc1411.html)
Archived (https://web.archive.org/web/20070520202433/http://www.oldcalculatormuseum.com/toshbc1411.
html) 2007-05-20 at the Wayback Machine
22. "1966: Semiconductor RAMs Serve High-speed Storage Needs" (https://www.computerhistory.org/silicone
ngine/semiconductor-rams-serve-high-speed-storage-needs/). Computer History Museum.
23. "Robert Dennard" (https://www.britannica.com/biography/Robert-Dennard). Encyclopedia Britannica.
Retrieved 8 July 2019.
24. Lojek, Bo (2007). History of Semiconductor Engineering (https://books.google.com/books?id=2cu1Oh_CO
v8C&pg=PA362). Springer Science & Business Media. pp. 362–363. ISBN 9783540342588. "The i1103
was manufactured on a 6-mask silicon-gate P-MOS process with 8 μm minimum features. The resulting
product had a 2,400 μm2 memory cell size, a die size just under 10 mm2, and sold for around $21."
25. Bellis, Mary. "Who Invented the Intel 1103 DRAM Chip?" (http://inventors.about.com/library/weekly/aa1008
98.htm). Retrieved 2025-03-03.
26. P. Darche (2020). Microprocessor: Prolegomenes - Calculation and Storage Functions - Calculation
Models and Computer (https://books.google.com/books?id=rLC9zQEACAAJ). John Wiley & Sons. p. 59.
ISBN 9781786305633.
27. B. Jacob; S. W. Ng; D. T. Wang (2008). Memory Systems: Cache, DRAM, Disk (https://books.google.com/
books?id=SrP3aWed-esC). Morgan Kaufmann. p. 324. ISBN 9780080553849.
28. "Electronic Design" (https://books.google.com/books?id=QmpJAQAAIAAJ). Electronic Design. 41 (15–21).
Hayden Publishing Company. 1993. "The first commercial synchronous DRAM, the Samsung 16-Mbit
KM48SL2000, employs a single-bank architecture that lets system designers easily transition from
asynchronous to synchronous systems."
29. "KM48SL2000-7 Datasheet" (https://www.datasheetarchive.com/KM48SL2000-7-datasheet.html).
Samsung. August 1992. Retrieved 19 June 2019.
30. "Samsung Electronics Develops First 128Mb SDRAM with DDR/SDR Manufacturing Option" (https://www.s
amsung.com/semiconductor/insights/news-events/samsung-electronics-develops-first-128mb-sdram-with-
ddr-sdr-manufacturing-option/). Samsung Electronics. Samsung. 10 February 1999. Retrieved 23 June
2019.
31. "Samsung Electronics Comes Out with Super-Fast 16M DDR SGRAMs" (https://www.samsung.com/semic
onductor/insights/news-events/samsung-electronics-comes-out-with-super-fast-16m-ddr-sgrams/).
Samsung Electronics. Samsung. 17 September 1998. Retrieved 23 June 2019.
32. Sze, Simon M. (2002). Semiconductor Devices: Physics and Technology (http://www.fulviofrisone.com/atta
chments/article/453/Semiconductor.Devices_Physics.Technology_Sze.2ndEd_Wiley_2002.pdf) (PDF)
(2nd ed.). Wiley. p. 214. ISBN 0-471-33372-7.
33. The Essentials of Computer Organization and Architecture (https://books.google.com/books?id=QGPHAl9
GE-IC&dq=size+of+a+memory+address&pg=PA321). Jones & Bartlett Learning. 2006. ISBN 978-0-7637-
3769-6.
34. Anderson, Alexander John (25 October 2020). Foundations of Computer Technology (https://books.google.
com/books?id=-vQCEAAAQBAJ). CRC Press. ISBN 978-1-000-15371-2.
35. "Shadow Ram" (http://hardwarehell.com/articles/shadowram.htm). Archived (https://web.archive.org/web/2
0061029162135/http://hardwarehell.com/articles/shadowram.htm) from the original on 2006-10-29.
Retrieved 2007-07-24.
36. The term was coined in "Archived copy" (http://www.eecs.ucf.edu/~lboloni/Teaching/EEL5708_2006/slides/
wulf94.pdf) (PDF). Archived (https://web.archive.org/web/20120406111104/http://www.eecs.ucf.edu/~lbolo
ni/Teaching/EEL5708_2006/slides/wulf94.pdf) (PDF) from the original on 2012-04-06. Retrieved
2011-12-14..
37. "Platform 2015: Intel Processor and Platform Evolution for the Next Decade" (http://epic.hpi.uni-potsdam.d
e/pub/Home/TrendsAndConceptsII2010/HW_Trends_borkar_2015.pdf) (PDF). March 2, 2005. Archived (ht
tps://web.archive.org/web/20110427072037/http://epic.hpi.uni-potsdam.de/pub/Home/TrendsAndConcepts
II2010/HW_Trends_borkar_2015.pdf) (PDF) from the original on April 27, 2011.
38. Agarwal, Vikas; Hrishikesh, M. S.; Keckler, Stephen W.; Burger, Doug (June 10–14, 2000). "Clock Rate
versus IPC: The End of the Road for Conventional Microarchitectures" (http://www.cs.utexas.edu/users/car
t/trips/publications/isca00.pdf) (PDF). Proceedings of the 27th Annual International Symposium on
Computer Architecture. 27th Annual International Symposium on Computer Architecture (https://dl.acm.org/
citation.cfm?id=339647). Vancouver, BC. Retrieved 14 July 2018.
39. Rainer Waser (2012). Nanoelectronics and Information Technology (https://books.google.com/books?id=1
PgYS7zDCM8C&q=processor-memory+performance+gap&pg=PA790). John Wiley & Sons. p. 790.
ISBN 9783527409273. Archived (https://web.archive.org/web/20160801114150/https://books.google.com/
books?id=1PgYS7zDCM8C&pg=PA790&dq=processor-memory+performance+gap&hl=en&sa=X&ei=jeM5
U93YAqTr2QWc74A4&ved=0CDYQ6AEwAg#v=onepage&q=processor-memory%20performance%20gap
&f=false) from the original on August 1, 2016. Retrieved March 31, 2014.
40. Chris Jesshope and Colin Egan (2006). Advances in Computer Systems Architecture: 11th Asia-Pacific
Conference, ACSAC 2006, Shanghai, China, September 6-8, 2006, Proceedings (https://books.google.co
m/books?id=0IY7LW5J4JgC&q=processor-memory+performance+gap&pg=PA109). Springer. p. 109.
ISBN 9783540400561. Archived (https://web.archive.org/web/20160801135254/https://books.google.com/
books?id=0IY7LW5J4JgC&pg=PA109&dq=processor-memory+performance+gap&hl=en&sa=X&ei=jeM5U
93YAqTr2QWc74A4&ved=0CEkQ6AEwBg#v=onepage&q=processor-memory%20performance%20gap&f
=false) from the original on August 1, 2016. Retrieved March 31, 2014.
41. Ahmed Amine Jerraya and Wayne Wolf (2005). Multiprocessor Systems-on-chips (https://books.google.co
m/books?id=7i9Z69lrYBoC&q=processor-memory+performance+gap&pg=PA90). Morgan Kaufmann.
pp. 90–91. ISBN 9780123852519. Archived (https://web.archive.org/web/20160801105357/https://books.g
oogle.com/books?id=7i9Z69lrYBoC&pg=PA90&dq=processor-memory+performance+gap&hl=en&sa=X&ei
=jeM5U93YAqTr2QWc74A4&ved=0CFMQ6AEwCA#v=onepage&q=processor-memory%20performance%
20gap&f=false) from the original on August 1, 2016. Retrieved March 31, 2014.
42. Celso C. Ribeiro and Simone L. Martins (2004). Experimental and Efficient Algorithms: Third International
Workshop, WEA 2004, Angra Dos Reis, Brazil, May 25-28, 2004, Proceedings, Volume 3 (https://books.go
ogle.com/books?id=f0pJYJQMlmoC&q=processor-memory+performance+gap&pg=PA529). Springer.
p. 529. ISBN 9783540220671. Archived (https://web.archive.org/web/20160801092734/https://books.googl
e.com/books?id=f0pJYJQMlmoC&pg=PA529&dq=processor-memory+performance+gap&hl=en&sa=X&ei=
1eM5U7veEaTx2QXM2oDYCw&ved=0CCwQ6AEwADgU#v=onepage&q=processor-memory%20performa
nce%20gap&f=false) from the original on August 1, 2016. Retrieved March 31, 2014.
43. "SSD Prices Continue to Fall, Now Upgrade Your Hard Drive!" (https://www.minitool.com/news/ssd-prices-f
all.html). MiniTool. 2018-09-03. Retrieved 2019-03-28.
44. Coppock, Mark (31 January 2017). "If you're buying or upgrading your PC, expect to pay more for RAM" (h
ttps://www.digitaltrends.com/computing/ram-prices-are-increasing-until-third-quarter-2017/).
www.digitaltrends.com. Retrieved 2019-03-28.
45. IBM first in IC memory (https://www.computerhistory.org/collections/catalog/102770626). IBM Corporation.
1965. Retrieved 19 June 2019. {{cite book}}: |website= ignored (help)
46. Sah, Chih-Tang (October 1988). "Evolution of the MOS transistor-from conception to VLSI" (http://www.dej
azzer.com/ece723/resources/Evolution_of_the_MOS_transistor.pdf) (PDF). Proceedings of the IEEE. 76
(10): 1280–1326 (1303). Bibcode:1988IEEEP..76.1280S (https://ui.adsabs.harvard.edu/abs/1988IEEEP..7
6.1280S). doi:10.1109/5.16328 (https://doi.org/10.1109%2F5.16328). ISSN 0018-9219 (https://search.worl
dcat.org/issn/0018-9219).
47. "Late 1960s: Beginnings of MOS memory" (http://www.shmj.or.jp/english/pdf/ic/exhibi718E.pdf) (PDF).
Semiconductor History Museum of Japan. 2019-01-23. Retrieved 27 June 2019.
48. "A chronological list of Intel products. The products are sorted by date" (https://web.archive.org/web/20070
809053720/http://download.intel.com/museum/research/arc_collect/timeline/TimelineDateSort7_05.pdf)
(PDF). Intel museum. Intel Corporation. July 2005. Archived from the original (http://download.intel.com/mu
seum/research/arc_collect/timeline/TimelineDateSort7_05.pdf) (PDF) on August 9, 2007. Retrieved
July 31, 2007.
49. "1970s: SRAM evolution" (http://www.shmj.or.jp/english/pdf/ic/exhibi724E.pdf) (PDF). Semiconductor
History Museum of Japan. Retrieved 27 June 2019.
50. Pimbley, J. (2012). Advanced CMOS Process Technology (https://books.google.com/books?id=8EUWHSq
evQoC&pg=PA7). Elsevier. p. 7. ISBN 9780323156806.
51. "Intel Memory" (https://web.archive.org/web/20220319073833/https://www.intel-vintage.info/intelmemory.ht
m). Intel Vintage. Archived from the original on 2022-03-19. Retrieved 2019-07-06.
52. Component Data Catalog (http://bitsavers.trailing-edge.com/components/intel/_dataBooks/1978_Intel_Co
mponent_Data_Catalog.pdf) (PDF). Intel. 1978. p. 3. Retrieved 27 June 2019.
53. "Silicon Gate MOS 2102A" (https://drive.google.com/file/d/0B9rh9tVI0J5mMmZlYWRlMDQtNDYzYS00OW
JkLTg4YzYtZDYzMzc5Y2ZlYmVk/view). Intel. Retrieved 27 June 2019.
54. "1978: Double-well fast CMOS SRAM (Hitachi)" (http://www.shmj.or.jp/english/pdf/ic/exhibi727E.pdf)
(PDF). Semiconductor History Museum of Japan. Retrieved 5 July 2019.
55. "Memory" (http://maltiel-consulting.com/Semiconductor_technology_memory.html). STOL (Semiconductor
Technology Online). Retrieved 25 June 2019.
56. Isobe, Mitsuo; Uchida, Yukimasa; Maeguchi, Kenji; Mochizuki, T.; Kimura, M.; Hatano, H.; Mizutani, Y.;
Tango, H. (October 1981). "An 18 ns CMOS/SOS 4K static RAM". IEEE Journal of Solid-State Circuits. 16
(5): 460–465. Bibcode:1981IJSSC..16..460I (https://ui.adsabs.harvard.edu/abs/1981IJSSC..16..460I).
doi:10.1109/JSSC.1981.1051623 (https://doi.org/10.1109%2FJSSC.1981.1051623). S2CID 12992820 (htt
ps://api.semanticscholar.org/CorpusID:12992820).
57. Yoshimoto, M.; Anami, K.; Shinohara, H.; Yoshihara, T.; Takagi, H.; Nagao, S.; Kayano, S.; Nakano, T.
(1983). "A 64Kb full CMOS RAM with divided word line structure". 1983 IEEE International Solid-State
Circuits Conference. Digest of Technical Papers. Vol. XXVI. pp. 58–59. doi:10.1109/ISSCC.1983.1156503
(https://doi.org/10.1109%2FISSCC.1983.1156503). S2CID 34837669 (https://api.semanticscholar.org/Corp
usID:34837669).
58. Havemann, Robert H.; Eklund, R. E.; Tran, Hiep V.; Haken, R. A.; Scott, D. B.; Fung, P. K.; Ham, T. E.;
Favreau, D. P.; Virkus, R. L. (December 1987). "An 0.8 μm 256K BiCMOS SRAM technology". 1987
International Electron Devices Meeting. pp. 841–843. doi:10.1109/IEDM.1987.191564 (https://doi.org/10.1
109%2FIEDM.1987.191564). S2CID 40375699 (https://api.semanticscholar.org/CorpusID:40375699).
59. Shahidi, Ghavam G.; Davari, Bijan; Dennard, Robert H.; Anderson, C. A.; Chappell, B. A.; et al. (December
1994). "A room temperature 0.1 μm CMOS on SOI". IEEE Transactions on Electron Devices. 41 (12):
2405–2412. Bibcode:1994ITED...41.2405S (https://ui.adsabs.harvard.edu/abs/1994ITED...41.2405S).
doi:10.1109/16.337456 (https://doi.org/10.1109%2F16.337456). S2CID 108832941 (https://api.semanticsc
holar.org/CorpusID:108832941).
60. "Japanese Company Profiles" (http://smithsonianchips.si.edu/ice/cd/PROF96/JAPAN.PDF) (PDF).
Smithsonian Institution. 1996. Retrieved 27 June 2019.
61. "History: 1990s" (https://web.archive.org/web/20210205032928/https://www.skhynix.com/eng/about/history
1990.jsp). SK Hynix. Archived from the original (https://www.skhynix.com/eng/about/history1990.jsp) on 5
February 2021. Retrieved 6 July 2019.
62. "Intel: 35 Years of Innovation (1968–2003)" (https://www.intel.com/Assets/PDF/General/35yrs.pdf) (PDF).
Intel. 2003. Retrieved 26 June 2019.
63. The DRAM memory of Robert Dennard (http://history-computer.com/ModernComputer/Basis/dram.html)
history-computer.com
64. "Manufacturers in Japan enter the DRAM market and integration densities are improved" (http://www.shmj.
or.jp/english/pdf/ic/exhibi745E.pdf) (PDF). Semiconductor History Museum of Japan. Retrieved 27 June
2019.
65. Gealow, Jeffrey Carl (10 August 1990). "Impact of Processing Technology on DRAM Sense Amplifier
Design" (https://core.ac.uk/download/pdf/4426308.pdf) (PDF). Massachusetts Institute of Technology.
pp. 149–166. Retrieved 25 June 2019 – via CORE.
66. "Silicon Gate MOS 2107A" (https://drive.google.com/file/d/0B9rh9tVI0J5mMDJjOGZkNzUtNzMxMS00ZW
M5LWIzNjEtZTg1MDZiNjM3ZDBm/view). Intel. Retrieved 27 June 2019.
67. "One of the Most Successful 16K Dynamic RAMs: The 4116" (https://web.archive.org/web/2023053118005
3/https://smithsonianchips.si.edu/augarten/p50.htm). National Museum of American History. Smithsonian
Institution. Archived from the original (http://smithsonianchips.si.edu/augarten/p50.htm) on 2023-05-31.
Retrieved 20 June 2019.
68. Memory Data Book And Designers Guide (http://www.bitsavers.org/components/mostek/_dataBooks/1979
_Mostek_Memory_Data_Book_and_Designers_Guide_Mar79.pdf) (PDF). Mostek. March 1979. pp. 9 &
183.
69. "The Cutting Edge of IC Technology: The First 294,912-Bit (288K) Dynamic RAM" (http://smithsonianchips.
si.edu/augarten/p66.htm). National Museum of American History. Smithsonian Institution. Retrieved
20 June 2019.
70. "Computer History for 1984" (https://www.computerhope.com/history/1984.htm). Computer Hope.
Retrieved 25 June 2019.
71. "Japanese Technical Abstracts" (https://books.google.com/books?id=Fa0kAQAAIAAJ). Japanese Technical
Abstracts. 2 (3–4). University Microfilms: 161. 1987. "The announcement of 1M DRAM in 1984 began the
era of megabytes."
72. Robinson, Arthur L. (11 May 1984). "Experimental Memory Chips Reach 1 Megabit: As they become
larger, memories become an increasingly important part of the integrated circuit business, technologically
and economically". Science. 224 (4649): 590–592. doi:10.1126/science.224.4649.590 (https://doi.org/10.1
126%2Fscience.224.4649.590). ISSN 0036-8075 (https://search.worldcat.org/issn/0036-8075).
PMID 17838349 (https://pubmed.ncbi.nlm.nih.gov/17838349).
73. MOS Memory Data Book (http://bitsavers.trailing-edge.com/components/ti/_dataBooks/1984_TI_MOS_Me
mory_Data_Book.pdf) (PDF). Texas Instruments. 1984. pp. 4–15. Retrieved 21 June 2019.
74. "Famous Graphics Chips: TI TMS34010 and VRAM" (https://www.computer.org/publications/tech-news/cha
sing-pixels/Famous-Graphics-Chips-IBMs-professional-graphics-the-PGC-and-8514A/Famous-Graphics-C
hips-TI-TMS34010-and-VRAM). IEEE Computer Society. 10 January 2019. Retrieved 29 June 2019.
75. "μPD41264 256K Dual Port Graphics Buffer" (https://console5.com/techwiki/images/4/4b/UPD41264.pdf)
(PDF). NEC Electronics. Retrieved 21 June 2019.
76. "Sense amplifier circuit for switching plural inputs at low power" (https://patents.google.com/patent/US4808
857). Google Patents. Retrieved 21 June 2019.
77. "Fine CMOS techniques create 1M VSRAM" (https://books.google.com/books?id=Fa0kAQAAIAAJ).
Japanese Technical Abstracts. 2 (3–4). University Microfilms: 161. 1987.
78. Hanafi, Hussein I.; Lu, Nicky C. C.; Chao, H. H.; Hwang, Wei; Henkels, W. H.; Rajeevakumar, T. V.;
Terman, L. M.; Franch, Robert L. (October 1988). "A 20-ns 128-kbit*4 high speed DRAM with 330-Mbit/s
data rate". IEEE Journal of Solid-State Circuits. 23 (5): 1140–1149. Bibcode:1988IJSSC..23.1140L (https://
ui.adsabs.harvard.edu/abs/1988IJSSC..23.1140L). doi:10.1109/4.5936 (https://doi.org/10.1109%2F4.593
6).
79. Breaking the gigabit barrier, DRAMs at ISSCC portend major system-design impact. (dynamic random
access memory; International Solid-State Circuits Conference; Hitachi Ltd. and NEC Corp. research and
development) (https://web.archive.org/web/20140827092848/http://business.highbeam.com/3591/article-1
G1-16482653/breaking-gigabit-barrier-drams-isscc-portend-major)[usurped], January 9, 1995
80. Scott, J.F. (2003). "Nano-Ferroelectrics" (https://books.google.com/books?id=z2ryCAAAQBAJ&pg=PA59
7). In Tsakalakos, Thomas; Ovid'ko, Ilya A.; Vasudevan, Asuri K. (eds.). Nanostructures: Synthesis,
Functional Properties and Application. Springer Science & Business Media. pp. 584–600 (597).
ISBN 9789400710191.
81. "Toshiba's new 32 Mb Pseudo-SRAM is no fake" (https://web.archive.org/web/20190629232051/https://ww
w.theengineer.co.uk/toshibas-new-32-mb-pseudo-sram-is-no-fake/). The Engineer. 24 June 2001. Archived
from the original (https://www.theengineer.co.uk/toshibas-new-32-mb-pseudo-sram-is-no-fake/) on 29 June
2019. Retrieved 29 June 2019.
82. "A Study of the DRAM industry" (https://dspace.mit.edu/bitstream/handle/1721.1/59138/659514510-MIT.pd
f) (PDF). MIT. 8 June 2010. Retrieved 29 June 2019.
83. Here, K, M, G, or T refer to the binary prefixes based on powers of 1024.
84. "KM48SL2000-7 Datasheet" (https://www.datasheetarchive.com/KM48SL2000-7-datasheet.html).
Samsung. August 1992. Retrieved 19 June 2019.
85. "MSM5718C50/MD5764802" (https://retrocdn.net/images/c/c3/Oki_Concurrent_RDRAM_datasheet.pdf)
(PDF). Oki Semiconductor. February 1999. Archived (https://web.archive.org/web/20190621151518/https://
retrocdn.net/images/c/c3/Oki_Concurrent_RDRAM_datasheet.pdf) (PDF) from the original on 2019-06-21.
Retrieved 21 June 2019.
86. "Ultra 64 Tech Specs". Next Generation. No. 14. Imagine Media. February 1996. p. 40.
87. "History: 1990s" (http://www.az5miao.com/history1990.html). az5miao. Retrieved 4 April 2022.
88. "Direct RDRAM" (https://retrocdn.net/images/6/68/Direct_RDRAM_datasheet.pdf) (PDF). Rambus. 12
March 1998. Archived (https://web.archive.org/web/20190621151523/https://retrocdn.net/images/6/68/Dire
ct_RDRAM_datasheet.pdf) (PDF) from the original on 2019-06-21. Retrieved 21 June 2019.
89. "Samsung Electronics Comes Out with Super-Fast 16M DDR SGRAMs" (https://www.samsung.com/semic
onductor/insights/news-events/samsung-electronics-comes-out-with-super-fast-16m-ddr-sgrams/).
Samsung Electronics. Samsung. 17 September 1998. Retrieved 23 June 2019.
90. "Samsung Electronics Develops First 128Mb SDRAM with DDR/SDR Manufacturing Option" (https://www.s
amsung.com/semiconductor/insights/news-events/samsung-electronics-develops-first-128mb-sdram-with-
ddr-sdr-manufacturing-option/). Samsung Electronics. Samsung. 10 February 1999. Retrieved 23 June
2019.
91. "Samsung Demonstrates World's First DDR 3 Memory Prototype" (https://phys.org/news/2005-02-samsun
g-world-ddr-memory-prototype.html). Phys.org. 17 February 2005. Retrieved 23 June 2019.
92. "History" (https://www.samsung.com/us/aboutsamsung/company/history/). Samsung Electronics.
Samsung. Retrieved 19 June 2019.
 93. "EMOTION ENGINE AND GRAPHICS SYNTHESIZER USED IN THE CORE OF PLAYSTATION BECOME
ONE CHIP" (https://www.sie.com/content/dam/corporate/en/corporate/release/pdf/030421be.pdf) (PDF).
Sony. April 21, 2003. Archived (https://web.archive.org/web/20170227150247/https://www.sie.com/content/
dam/corporate/en/corporate/release/pdf/030421be.pdf) (PDF) from the original on 2017-02-27. Retrieved
26 June 2019.
94. "History: 2000s" (http://www.az5miao.com/history2000.html). az5miao. Retrieved 4 April 2022.
95. "Samsung Develops the Industry's Fastest DDR3 SRAM for High Performance EDP and Network
Applications" (https://www.samsung.com/semiconductor/insights/news-events/samsung-develops-the-indu
strys-fastest-ddr3-sram-for-high-performance-edp-and-network-applications/). Samsung Semiconductor.
Samsung. 29 January 2003. Retrieved 25 June 2019.
96. "Elpida ships 2GB DDR2 modules" (https://web.archive.org/web/20190710115030/https://www.theinquirer.
net/inquirer/news/1044210/elpida-ships-2gb-ddr2-modules). The Inquirer. 4 November 2003. Archived
from the original on July 10, 2019. Retrieved 25 June 2019.
97. "Samsung Shows Industry's First 2-Gigabit DDR2 SDRAM" (https://www.samsung.com/semiconductor/insi
ghts/news-events/samsung-shows-industrys-first-2-gigabit-ddr2-sdram/). Samsung Semiconductor.
Samsung. 20 September 2004. Retrieved 25 June 2019.
98. "ソニー、65nm対応の半導体設備を導入。3年間で2,000億円の投資" (https://pc.watch.impress.co.jp/docs/2
003/0421/sony1.htm). pc.watch.impress.co.jp. Archived (https://web.archive.org/web/20160813020249/htt
p://pc.watch.impress.co.jp/docs/2003/0421/sony1.htm) from the original on 2016-08-13.
99. ATI engineers by way of Beyond 3D's Dave Baumann
100. "Our Proud Heritage from 2000 to 2009" (https://www.samsung.com/semiconductor/about-us/history-03/).
Samsung Semiconductor. Samsung. Retrieved 25 June 2019.
101. "Samsung 50nm 2GB DDR3 chips are industry's smallest" (https://www.slashgear.com/samsung-50nm-2g
b-ddr3-chips-are-industrys-smallest-2917676/). SlashGear. 29 September 2008. Retrieved 25 June 2019.
102. "History: 2010s" (http://www.az5miao.com/history2010.html). az5miao. Retrieved 4 April 2022.
103. "Our Proud Heritage from 2010 to Now" (https://www.samsung.com/semiconductor/about-us/history-04/).
Samsung Semiconductor. Samsung. Retrieved 25 June 2019.
104. "Samsung Electronics Announces Industry's First 8Gb LPDDR5 DRAM for 5G and AI-powered Mobile
Applications" (https://news.samsung.com/global/samsung-electronics-announces-industrys-first-8gb-lpddr5
-dram-for-5g-and-ai-powered-mobile-applications). Samsung. July 17, 2018. Retrieved 8 July 2019.
105. "Samsung Unleashes a Roomy DDR4 256GB RAM" (https://web.archive.org/web/20190621205106if_/http
s://www.tomshardware.co.uk/samsung-256gb-ddr4-ram,news-59123.html). Tom's Hardware. 6 September
2018. Archived from the original (https://www.tomshardware.co.uk/samsung-256gb-ddr4-ram,news-59123.
html) on June 21, 2019. Retrieved 4 April 2022.
106. HM5283206 Datasheet (https://www.datasheetarchive.com/pdf/download.php?id=d740571591400628c124
d16f943c9f96145441&type=M&term=HM5283206). Hitachi. 11 November 1994. Retrieved 10 July 2019.
107. "Hitachi HM5283206FP10 8Mbit SGRAM" (http://smithsonianchips.si.edu/ice/cd/9702_529.pdf) (PDF).
Smithsonian Institution. Archived (https://web.archive.org/web/20030716101100/http://smithsonianchips.si.
edu/ice/cd/9702_529.pdf) (PDF) from the original on 2003-07-16. Retrieved 10 July 2019.
108. μPD481850 Datasheet (https://www.datasheetarchive.com/pdf/download.php?id=96dd7345eb44f58adee4
24725f8fa65f48c794&type=O). NEC. 6 December 1994. Retrieved 10 July 2019.
109. NEC Application Specific Memory (https://archive.org/details/bitsavers_necdataBoonSpecificMemory_2314
8799). NEC. Fall 1995. p. 359 (https://archive.org/details/bitsavers_necdataBoonSpecificMemory_2314879
9/page/n365). Retrieved 21 June 2019.
110. UPD4811650 Datasheet (https://www.datasheetarchive.com/pdf/download.php?id=74d301b62a3253e6f3e
4ff722cad1e9cb1ac90&type=P). NEC. December 1997. Retrieved 10 July 2019.
111. Takeuchi, Kei (1998). "16M-BIT SYNCHRONOUS GRAPHICS RAM: μPD4811650" (https://www.datasheet
archive.com/pdf/download.php?id=5fde91b774d1f298423c9d3ae6982f843a4df7&type=P). NEC Device
Technology International (48). Retrieved 10 July 2019.
112. "Samsung Announces the World's First 222 MHz 32Mbit SGRAM for 3D Graphics and Networking
Applications" (https://www.samsung.com/semiconductor/insights/news-events/samsung-announces-the-wo
rlds-first-222-mhz-32mbit-sgram-for-3d-graphics-and-networking-application/). Samsung Semiconductor.
Samsung. 12 July 1999. Retrieved 10 July 2019.
113. "Samsung Electronics Announces JEDEC-Compliant 256Mb GDDR2 for 3D Graphics" (https://www.samsu
ng.com/semiconductor/insights/news-events/samsung-electronics-announces-jedec-compliant-256mb-gdd
r2-for-3d-graphics/). Samsung Electronics. Samsung. 28 August 2003. Retrieved 26 June 2019.
114. "K4D553238F Datasheet" (https://www.datasheetarchive.com/pdf/download.php?id=cbbd25bf58d1232267
a54268161c1af804dc2f&type=P). Samsung Electronics. March 2005. Retrieved 10 July 2019.
115. "Samsung Electronics Develops Industry's First Ultra-Fast GDDR4 Graphics DRAM" (https://www.samsun
g.com/semiconductor/insights/news-events/samsung-electronics-develops-industrys-first-ultra-fast-gddr4-g
raphics-dram/). Samsung Semiconductor. Samsung. October 26, 2005. Retrieved 8 July 2019.
116. "K4W1G1646G-BC08 Datasheet" (https://www.datasheet.directory/index.php?title=Special:PdfViewer&url=
https%3A%2F%2Ffanyv88.com%3A443%2Fhttps%2Fdatasheet.iiic.cc%2Fdatasheets-1%2Fsamsung_semiconductor_division%2FK4W1G16
46G-BC08.pdf) (PDF). Samsung Electronics. November 2010. Archived (https://web.archive.org/web/2022
0124234650/https://datasheet.iiic.cc/datasheets-1/samsung_semiconductor_division/K4W1G1646G-BC08.
pdf) (PDF) from the original on 2022-01-24. Retrieved 10 July 2019.
117. Shilov, Anton (March 29, 2016). "Micron Begins to Sample GDDR5X Memory, Unveils Specs of Chips" (htt
ps://www.anandtech.com/show/10193/micron-begins-to-sample-gddr5x-memory). AnandTech. Retrieved
16 July 2019.
118. Shilov, Anton (July 19, 2017). "Samsung Increases Production Volumes of 8 GB HBM2 Chips Due to
Growing Demand" (https://www.anandtech.com/show/11643/samsung-increases-8gb-hbm2-production-vol
ume). AnandTech. Retrieved 29 June 2019.
119. "HBM" (https://samsungsemiconductor-us.com/hbm/). Samsung Semiconductor. Samsung. Retrieved
16 July 2019.
120. "Samsung Electronics Starts Producing Industry's First 16-Gigabit GDDR6 for Advanced Graphics
Systems" (https://news.samsung.com/global/samsung-electronics-starts-producing-industrys-first-16-gigabi
t-gddr6-for-advanced-graphics-systems). Samsung. January 18, 2018. Retrieved 15 July 2019.
121. Killian, Zak (18 January 2018). "Samsung fires up its foundries for mass production of GDDR6 memory" (h
ttps://techreport.com/news/33129/samsung-fires-up-its-foundries-for-mass-production-of-gddr6-memory).
Tech Report. Retrieved 18 January 2018.
122. "Samsung Begins Producing The Fastest GDDR6 Memory In The World" (https://wccftech.com/samsung-g
ddr6-16gb-18gbps-mass-production-official/). Wccftech. 18 January 2018. Retrieved 16 July 2019.

External links
Media related to RAM at Wikimedia Commons

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