Lecture 4 09082024
Lecture 4 09082024
Lecture -4
09-08-2024
Prof. Ramesha C K
◼ It is easy to oxidize
◼ Crystal growth
◼ Wafer formation
◼ Doping to make n or p type
◼ Growth of oxide on the surface
◼ Photolithography
◼ Transferring patterns on the wafer
◼ Etching
◼ Window opening
◼ Wafer preparation
◼ Oxidation
◼ Photolithography
◼ Ion implantation
◼ Epitaxial growth
◼ metallization
SiO2
Si single crystal
◼ Role of interface
Photo resist
SiO2
Si single crystal
Photo resist
SiO2
Si single crystal
◼ Through transparent region of the mask photoresist is exposed and its properties changes. It becomes soft and easy to remove
from these portions.
◼ Concept of – and + photo resist will also be of our interest.
BITS Pilani, K K Birla Goa Campus
Channel opening: selective removal
SiO2
Si single crystal
Si single crystal
◼ Hard portion of the photoresist protects the underlying oxide layer. Finally
the photresist is removed.
◼ Hard portion of the photoresist protects the underlying oxide layer. Finally
the photresist is removed.
SiO2
Steps till here are
(i) oxidation (ii)
n+
photolithography
SiO2 n
P layer + n+
For new Epitaxially grown layer n type
layer (i)
oxidation
(ii)
n+
photolitho
graphy
and (iii) P-type Si single crystal
diffusion
SiO2 n
P layer + n+
For new Epitaxially grown layer n type
layer (i)
oxidation
(ii)
n+
photolitho
graphy
and (iii) P-type Si single crystal
diffusion
P type
substra
te
n+
p n
◼ O-P-D for n+
◼ Epitaxial growth of n type
◼ O-P-D for p layer in n type
◼ O-P-D for n layer in n type
◼ Oxide layer formation
◼ O-P-D of metallization at three places