0% found this document useful (0 votes)
5 views22 pages

Lecture 4 09082024

The document outlines the IC fabrication technology process, focusing on wafer preparation, crystal growth, and various fabrication steps such as oxidation, photolithography, doping, and metallization. It emphasizes the importance of silicon as the primary material used in circuits and details the specific steps involved in BJT fabrication. The lecture is part of a course at BITS Pilani, K K Birla Goa Campus, led by Prof. Ramesha C K.

Uploaded by

Tanvi naik
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
0% found this document useful (0 votes)
5 views22 pages

Lecture 4 09082024

The document outlines the IC fabrication technology process, focusing on wafer preparation, crystal growth, and various fabrication steps such as oxidation, photolithography, doping, and metallization. It emphasizes the importance of silicon as the primary material used in circuits and details the specific steps involved in BJT fabrication. The lecture is part of a course at BITS Pilani, K K Birla Goa Campus, led by Prof. Ramesha C K.

Uploaded by

Tanvi naik
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 22

IC Fabrication Technology

Lecture -4
09-08-2024
Prof. Ramesha C K

BITS Pilani, K K Birla Goa Campus


Basic Process Steps for Wafer Preparation

Wafer Lapping and


Crystal Growth Edge Grind Cleaning

Shaping Etching Inspection

Wafer Slicing Polishing Packaging

BITS Pilani, K K Birla Goa Campus


The element: Si
◼ 95% ckts are made up of Si

◼ It is easy to oxidize

◼ Good masking properties

◼ Selective doping is possible

◼ High speed deliverable.

◼ Low cost because of the easily availability of raw material

BITS Pilani, K K Birla Goa Campus


Basic units
◼ BJT (older technology)

◼ MOSFET (newer technology)

◼ In this course our focus in on fabrication not on working


principles.

◼ Substrate choice is important: choice of a single XL with a


particular orientation, electrical resistivity is also imp.

BITS Pilani, K K Birla Goa Campus


BJT fabrication processing steps

◼ Crystal growth
◼ Wafer formation
◼ Doping to make n or p type
◼ Growth of oxide on the surface
◼ Photolithography
◼ Transferring patterns on the wafer
◼ Etching
◼ Window opening

BITS Pilani, K K Birla Goa Campus


Actual important steps -6

◼ Wafer preparation
◼ Oxidation
◼ Photolithography
◼ Ion implantation
◼ Epitaxial growth
◼ metallization

BITS Pilani, K K Birla Goa Campus


step1: crystal growth and wafer preparation.
• We grow crystal and make a wafer out of it. 100-500 n and to be
doped with B/P to make n or p type.
step1: crystal growth and wafer
preparation.
◼ We grow crystal and make a wafer out of it.
100-500 n and to be doped with B/P to make
n or p type.

BITS Pilani, K K Birla Goa Campus


Step2: oxidation on the surface

SiO2

Si single crystal

◼ SiO2 is transparent and thickness decides the colour.

BITS Pilani, K K Birla Goa Campus


Issues related to oxidation

◼ Si-SiO2 is the most imp junction in solid state electronics.

◼ Role of interface

◼ Which is the diffusing species Si or O

◼ We will also examine insulators for next generation


microelectronics.

BITS Pilani, K K Birla Goa Campus


Channel opening: selective removal

Photo resist

SiO2

Si single crystal

◼ Cover the oxide by photoresist which is exposed to


UV radiation.
BITS Pilani, K K Birla Goa Campus
Step 3: photolithography (transferring patterns through
masking on the photo resist)
h
Mask

Photo resist

SiO2

Si single crystal

◼ Through transparent region of the mask photoresist is exposed and its properties changes. It becomes soft and easy to remove
from these portions.
◼ Concept of – and + photo resist will also be of our interest.
BITS Pilani, K K Birla Goa Campus
Channel opening: selective removal

SiO2

Si single crystal

◼ Hard portion of the photoresist protects the


underlying oxide layer.
BITS Pilani, K K Birla Goa Campus
Finally photo resist is removed

Si single crystal

◼ Hard portion of the photoresist protects the underlying oxide layer. Finally
the photresist is removed.

BITS Pilani, K K Birla Goa Campus


Finally photo resist is removed

P-type Si single crystal

◼ Hard portion of the photoresist protects the underlying oxide layer. Finally
the photresist is removed.

BITS Pilani, K K Birla Goa Campus


step 4: doping through the window

SiO2
Steps till here are
(i) oxidation (ii)

n+
photolithography

P-type Si single crystal

◼ Buried layer creation through Buried layer diffusion.

BITS Pilani, K K Birla Goa Campus


step 5:removal of oxide layer and
epitaxial growth

SiO 2 layer n type


Steps till Epitaxially grown
here are
(i)
oxidatio
n+
n (ii)
photolith
ography P-type Si single crystal
(iii)
diffusion
◼ A much thinner, another single crystal layer (few microns) on
the top of this substrate.
BITS Pilani, K K Birla Goa Campus
Doing of p, n+ regions

SiO2 n
P layer + n+
For new Epitaxially grown layer n type
layer (i)
oxidation
(ii)
n+
photolitho
graphy
and (iii) P-type Si single crystal
diffusion

◼ A much thinner, another single crystal layer (few microns) on


the top of this substrate.
BITS Pilani, K K Birla Goa Campus
Step 6 metallization
B E C

SiO2 n
P layer + n+
For new Epitaxially grown layer n type
layer (i)
oxidation
(ii)
n+
photolitho
graphy
and (iii) P-type Si single crystal
diffusion

◼ A much thinner, another single crystal layer (few microns) on


the top of this substrate.
BITS Pilani, K K Birla Goa Campus
n+
n+

P type
substra
te

n+
p n

BITS Pilani, K K Birla Goa Campus


Flow chart

◼ O-P-D for n+
◼ Epitaxial growth of n type
◼ O-P-D for p layer in n type
◼ O-P-D for n layer in n type
◼ Oxide layer formation
◼ O-P-D of metallization at three places

BITS Pilani, K K Birla Goa Campus


Thank You

BITS Pilani, K K Birla Goa Campus

You might also like