Power Electronics Sem VI
Power Electronics Sem VI
Lab Manual
Power Electronics
EE- 502
Name
Roll No.
Branch
Semester
INDEX
S. Page Date of Date of
List of Experiments Sign Remarks
No. no Performance checking
Theory:
1. Normally, with no bias applied to the gate, the SCR is blocked & it acts as open
circuit switch, it passes negligible current in either direction.
2. When a suitable bias is applied to the gate, SCR acts like a normal silicon rectifier,
and conducts (between anode &cathode) in the forward direction, but blocks in the
reverse direction.
3. Once the SCR has turned on and is conducting in the forward direction, the gate loose
control, and SCR conducts, even through the gate bias may be removed, till
anode current la is greater than holding current lth.
A major advantage of SCR is, it offers high power gain between gate & anode current. It
can be used to replace mechanical relays.
When a low value forward bias is applied to SCR, it exhibits very high impedance. This
is forward blocking or off state of SCR & in this state very small forward off state current
flows through the device.
As we go on increasing forward bias (with no gate bias) a voltage point is reached
at which suddenly forward current increases and SCR goes in ON state. This value of
forward voltage is called Forward Break over Voltage, VBO. When SCR is in the ON state,
the forward current is limited by external load resistance only. Under reverse bias SCR
exhibits a very high impedance and only very small amount reverse blocking current flow
through it. If reverse bias is increased to reverse damage to the device.
Under forward bias condition, by using proper gate bias, SCR can be made to
fire at lower voltage than VBO& it depends on the value of gate current.
Once the SCR is triggered by gate signal, the current through the device is independent of
gate voltage or current. The SCR remains in the ON state until forward current is reduced
to a level below that required to sustain conduction. This minimum forward current is
called Holding Current.
Circuit Diagram-
Connection Diagram-
Apparatus Required: -
1- PEC16M1A Trainer
2- Ammeter(0-200Ma) MC -2Nos
3- Voltmeter (0-30V) MC
4- Patch chords
Connection Procedure
1-Connected to SCR anode ,cathode, gate terminal to SCR characteristic circuit.
2-Connected the Ammeter in anode terminal as indicated in the connection diagram.
3-Connected the Ammeter is gate terminal as indicated in the connection diagram.
4-Voltmeter is connected to the across of anode and cathode terminal.
Experimental Procedure
o Switch on the 230V AC supply.
o Now very the pot3 and set the gate current (IG) the range of 4mA to 5mA.
o Now slowly increase the anode and cathode voltage (VAK) by varying the pot 4 till the
thyristor get turned on note down the ammeter (Ia) Voltmeter (VAK) readings.
o Now find the break over voltage (VBR)
o For various gate current take the reading and tabulate in table 1.
o Plot the graph (VAK) Vs Ia in a graph sheet.
o After note down the max anode current remove the gate current by switch OFF the
switch S1.
o Now reduce the anode cathode voltage (VAK) gradually, at on stage the anode current
will suddenly reach zero value. The current at this stage is holding current (IH).
o Now switch ON the switch S1 and increase anode cathode voltage (VAK) slightly, now
again switch OFF S1
o If the anode current show zero value again switch ON S1 and very the anode cathode
voltage
o If the anode current shows some value, that is the latching current of SCR.
Note-
1- The holding current is in the order of milliampere and is less than the latching
current.
2- Only forward characteristics of the SCR can be studied in the experiment.
Precautions
➢ No loose wires or metal pieces should be lying on table or near the circuit as they cause
short circuits and sparking.
➢ Avoid using long wires, that may get in your way while making adjustments or changing
leads.
➢ Keep the conducting parts and connections out of the way from accidental touching and
from any contacts to test equipment or any parts, connected to other voltage levels.
➢ When working with inductive circuits, reduce voltages or currents to near zero before
switching open the circuits.
➢ When working with energized circuits, use only one hand while keeping the rest of your
body away from conducting surfaces.
➢ Before powering the circuits, check for all the connections of the circuit and scope
connection. This avoids shorting or any ground looping that may lead to electrical shocks
or damage of equipment.
➢ Double check you’re wiring and circuit connections (use a point-to-point wiring diagram
to review when making these checks).
➢ First apply low voltages to check proper functionality of circuits. Once functionality is
ok, increase voltages to the required levels.
➢ Reduce the voltage or power slowly till it comes to zero.
➢ While Switch of all the power supplies. Let the load be connected at the output for some
time, so that it helps to discharge capacitor or inductor if any, completely.
➢ While Modifying the Circuit, switch off the circuit, Modify the connections based on the
requirement. Reverify the circuit by the faculty member and power up.
Observation Table
IG IG
S. No.
VAK IA VAK IA
Calculation
Model Graph
Result-
Thus the Vi characteristics of SCR were drawn and note down the following values from
the graph sheet.
1- Latching current =
2- Holding current =
3- Gate current =
4- Break over voltage =
Discussion: Comparison of the standard result with the result obtained are as follows
Conclusion:
Future Scope:
Viva Voice
Experiment No 2
Aim: To Verify, simulate and plot the VI characteristics of DIAC using simulation software and
test the same circuit on the bread board or PEC16MIA trainer and compare the results with the
simulated results.
Theory: A DIAC is a two terminal three-layer bidirectional device which can be switched from
its off state to on state for either polarity of applied voltage. The operation of DIAC is identical
both in forward and reverse conduction. The DIAC does not conduct until the applied voltage of
either polarity reaches the break over voltage VBO.
APPARATUS REQUIRED:
(0-30) V
1 R.P. S 1
(0-300)V
(0–50)mA
2 Ammeter (0–30)mA 1
(0–10)mA
(0–50)V
3 Voltmeter 1
(0-15)V
4
DIAC SSD3A 1
5 Resistor 5K Ω, 1K Ω 1
Procedure:
1. The connections are made as shown in the circuit diagram.
2. First DIAC is connected in forward direction
3. The input supply is increased in step by step by varying the RPS o
The corresponding ammeter and voltmeter readings are noted and
tabulated.
4. Then the DIAC is connected in reverse condition.
5. The above process is repeated
Precautions
➢ No loose wires or metal pieces should be lying on table or near the circuit as they cause
short circuits and sparking.
➢ Avoid using long wires, that may get in your way while making adjustments or changing
leads.
➢ Keep the conducting parts and connections out of the way from accidental touching and
from any contacts to test equipment or any parts, connected to other voltage levels.
➢ When working with inductive circuits, reduce voltages or currents to near zero before
switching open the circuits.
➢ When working with energized circuits, use only one hand while keeping the rest of your
body away from conducting surfaces.
➢ Before powering the circuits, check for all the connections of the circuit and scope
connection. This avoids shorting or any ground looping that may lead to electrical shocks
or damage of equipment.
➢ Double check you’re wiring and circuit connections (use a point-to-point wiring diagram
to review when making these checks).
➢ First apply low voltages to check proper functionality of circuits. Once functionality is
ok, increase voltages to the required levels.
➢ Reduce the voltage or power slowly till it comes to zero.
➢ While Switch of all the power supplies. Let the load be connected at the output for some
time, so that it helps to discharge capacitor or inductor if any, completely.
➢ While Modifying the Circuit, switch off the circuit, Modify the connections based on the
requirement. Reverify the circuit by the faculty member and power up.
Calculation
Model Graph
Result:Thus, the V-I characteristics of DIAC was obtained and graph was drawn.
Discussion: Comparison of the standard result with the result obtained are as follows
Conclusion:
Future Scope
Viva Questions
4. What Is the Relation Between the Gate Signal and Forward Break Over Voltage (vbo)?
Theory:
In common emitter configuration the emitter is common to both input and output. For normal operation the
Base-Emitter junction is forward biased and base- collector junction is reverse biased. The input characteristics
are plotted between IB that of a forward biased diode. The input dynamic resistance is calculated using the
formula
The output characteristics are plotted between IC and VCE keeping IB constant. These curves are almost
horizontal. The output dynamic resistance is given by,
APPARATUS REQUIRED:
Procedure:
Input Characteristics:
a. Connect the circuit as shown in fig A.
b. Keep the voltage VCE as constant at 2V by varying VCC.
c. Vary the input voltage, VBB in steps of 1V up to 10V
d. Measure the voltage, VBE from voltmeter and current IB through the ammeter for different value of
input voltage.
e. Repeat the step 3 and 4 for VCE values of 5V and 10V.
f. Draw input static characteristics for tabulated values.
g. At suitable operating point, calculate input dynamic resistance.
Output Characteristics:
a. Fix input base current, Isat at constant value say at 10 BµA.
b. Vary the output voltage, VCC in steps of 1V from 0V up to10V.
c. Measure the voltage, VCE from voltmeter and current IC through the ammeter for different values.
d. Repeat above steps 2and 3 for various values of I =20µA and 30µA.
e. Draw output static characteristics for tabulated values
Precautions
➢ No loose wires or metal pieces should be lying on table or near the circuit as they cause short circuits
and sparking.
➢ Avoid using long wires, that may get in your way while making adjustments or changing leads.
➢ Keep the conducting parts and connections out of the way from accidental touching and from any
contacts to test equipment or any parts, connected to other voltage levels.
➢ When working with inductive circuits, reduce voltages or currents to near zero before switching open
the circuits.
➢ When working with energized circuits, use only one hand while keeping the rest of your body away
from conducting surfaces.
➢ Before powering the circuits, check for all the connections of the circuit and scope connection. This
avoids shorting or any ground looping that may lead to electrical shocks or damage of equipment.
➢ Double check your wiring and circuit connections (use a point-to-point wiring diagram to review
when making these checks).
➢ First apply low voltages to check proper functionality of circuits. Once functionality is ok, increase
voltages to the required levels.
➢ Reduce the voltage or power slowly till it comes to zero.
➢ While Switch of all the power supplies. Let the load be connected at the output for some time, so that
it helps to discharge capacitor or inductor if any, completely.
➢ While Modifying the Circuit, switch off the circuit, Modify the connections based on the requirement.
Reverify the circuit by the faculty member and power up.
Observation Table
Input Characteristics:
Applied VCE= 2V VCE= 5V VCE= 10V
S.No. Voltage VBE(V) IE (µA) VBE(V) IE (µA) VBE(V) IE (µA)
VBB(V)
01 0
02 0.2
03 0.4
04 0.6
05 0.8
06 1.0
07 2.0
08 3.0
09 4.0
10 5.0
Output Characteristics:
Applied IB = 10µA IB = 20µA IB = 30µA
S.No. Voltage VCE(V) IC (µA) VCE(V) IC (µA) VCE(V) IC (µA)
VCC(V)
01 0
02 0.2
03 0.4
04 0.6
05 0.8
06 1.0
07 2.0
08 3.0
09 4.0
10 5.0
Calculations:
Input Characteristics:
Input Resistance ri = ΔVBE / ΔIB at constant VCE
Output Characteristics:
Output Dynamic Resistance ro = Δ VCE / ΔIc at constant IB
Gain:
Ac current gain βdc=ΔIC /ΔIB at constant VCE
Model Graph:
Result:
Discussion: Comparison of the standard result with the result obtained are as follows
Conclusion:
Future Scope
Viva Questions
1. Define the current gain for CE configuration & CB configuration
2. Derive the relationship between α and β?
3. Compare the performance of CB, CE & CC configuration on the basis of:
(a) Input resistance
(b) Output resistance
(c) Current gain (d) Voltage gain
4. Explain the term base-width modulation or early effect?
5. Why CE is preferred over CB & CC configuration?
Experiment No 4
Aim: Design and simulate a circuit whose input gate current is 4mA then plot VI characteristics of TRIAC
using simulation software and test the same circuit on the bread board or PEC16MIA trainer and compare the
results with the simulated results.
Theory: A TRIAC is a three terminal semiconductor switching device which can control alternating current
in a load. A TRIAC can control conduction of both positive and negative half cycles of A.C supply. It is
sometimes called a bidirectional semiconductor triode switch.
APPARATUS REQUIRED:
1 PEC16MIA Trainer 1
5 TRIAC BTM36 1
6 Resistor 5K Ω, 1K Ω 1
Procedure:
1.The connections are made as shown in the circuit diagram.
2. The TRIAC is connected in forward direction and supply is switched ‘ON’.
3. VMT1MT2 is constant by varying RPS2 and then varying IG by varying RPS1.
4. The corresponding ammeter and voltmeter readings are noted and tabulated.
5.Next the TRIAC is connected in reverse direction.
6.The above process is repeated.
Precautions
➢ No loose wires or metal pieces should be lying on table or near the circuit as they cause short circuits and
sparking.
➢ Avoid using long wires, that may get in your way while making adjustments or changing leads.
➢ Keep the conducting parts and connections out of the way from accidental touching and from any
contacts to test equipment or any parts, connected to other voltage levels.
➢ When working with inductive circuits, reduce voltages or currents to near zero before switching open the
circuits.
➢ When working with energized circuits, use only one hand while keeping the rest of your body away from
conducting surfaces.
➢ Before powering the circuits, check for all the connections of the circuit and scope connection. This
avoids shorting or any ground looping that may lead to electrical shocks or damage of equipment.
➢ Double check you’re wiring and circuit connections (use a point-to-point wiring diagram to review when
making these checks).
➢ First apply low voltages to check proper functionality of circuits. Once functionality is ok, increase
voltages to the required levels.
➢ Reduce the voltage or power slowly till it comes to zero.
➢ While Switch of all the power supplies. Let the load be connected at the output for some time, so that it
helps to discharge capacitor or inductor if any, completely.
➢ While Modifying the Circuit, switch off the circuit, Modify the connections based on the requirement.
Reverify the circuit by the faculty member and power up.
Observation Table
VMT1MT2 (V) IG (mA) VMT1MT2 IMT2 (mA)
21
Calculation:
Result: Thus, the V-I characteristics of TRIAC was obtained and graph was drawn.
Discussion: Comparison of the standard result with the result obtained are as follows
Conclusion:
Future Scope
Viva Questions
• What Is the Relation Between the Gate Signal and Forward Break Over Voltage (vbo) in TRIAC?
Experiment No 5
22
Aim: Design and simulate a circuit to verify the output characteristics of MOSFET using simulation
software and test the same circuit on the bread board or PEC16MIA trainer and compare the results with the
simulated results.
Theory:
A bipolar junction transistor (BJT) is a current – controlled device and requires base current for current flow in
the collector. Since the collector current is dependent on the Input (or base) current, the current gain is highly
dependent on the junction temperature.
A power MOSFET is a voltage – controlled device and requires only a small input current.
The switching speed is very high and the switching times are if the order of nanoseconds. Power MOSFETS
are finding increasing applications in low – proper high- frequency converters. MOSFET do not have the
problems of second breakdown phenomena as do BJTs. However, MOSFETs have the problems of electrostatic
discharge & require special care in handling. In addition, it is relatively, difficult to protect them under short
circuited fault conditions.
An n – channel depletion – type MOSFET is formed on a P- type silicon substrate with two heavily doped n+
silicon for low resistance connection. The gate is isolated from the channel by a thin oxide layer. The terminates
are called gate, drain and source. The substrate is normally connected to the source. The gate –to –source
voltage. VGS could be either positive or negative. If VGS is negative some of the electrons in the n- channel
area will be repelled and a depletion region will be completely depleted, offering ahigh value of RDS, and there
will be no current flow from drain to source, IDS=0. The value of VGS when this happens is called pinch –off
voltage Vp.
On the other hand, if VGS is made positive, the channel becomes wider, and IDS increases due to reduction in
RDS with P-channel depletion–type MOSFET, the polarities of VDS, IDS and VGS are reversed.
An n-channel enhancement- type MOSFET has no physical channel, as shown in figure. If VGS is +ve,
an induced voltage will attract the electrons from P-substrate and accumulate them at the surface beneath the
oxide layer. Sufficient numbers of electrons are accumulated to form a virtual n- channel & the current flows
from drain to source.
STEADY STATE CHARACTERISTIC
To MOSFET is a voltage - controlled device and have very high input impedance. The gate draws a very small
leakage current, in the order of nano-ampere. The current gain, which is the ratio of drain current, ID, to input
gate current, IG, is typically of the order of 1012 .However, the current gain is not an important parameter. The
trans- conductance which is the ratio of drain current to gate voltage defines the transfer characteristics and is
very important parameter.
23
Circuit Diagram
Connection Diagram
Apparatus Required
1- PEC16M1A trainer
2- Ammeter(0-200mA) - 2Nos
3- Voltmeter (0-20V) MC - 2Nos
4- Patch chords
Connection Procedure
1. Connect the MOSFET drain, source, gate terminal to MOSFET characteristics circuit
2. Voltmeter is connected to the across of the gate source terminal
3. Connect the ammeter in drain terminal as indicated in connection diagram
4. voltmeter is connected to the across the drain and source terminal
24
Experimental Procedure
1- Now switch ON the 230V AC supply
2- Keep the gate-source (Vgs) voltage at particular voltage by varying pot1
3- Smoothly vary the drain-source (Vds) voltage by varying pot2 till the MOSFET gate turn ON and note
the voltmeter(Vds) ammeter(Id) reading as soon in table-3
4- Further increase the drain source(Vds) voltage and note the current Id
5- For different value of gate-source voltage (Vgs) note the reading as soon in the table-3
6- To calculate Gm, Rds. values the plot the Vds Vs Id in a graph sheet
7- Note down the following values from graph sheet
Precautions
➢ No loose wires or metal pieces should be lying on table or near the circuit as they cause short circuits and
sparking.
➢ Avoid using long wires, that may get in your way while making adjustments or changing leads.
➢ Keep the conducting parts and connections out of the way from accidental touching and from any
contacts to test equipment or any parts, connected to other voltage levels.
➢ When working with inductive circuits, reduce voltages or currents to near zero before switching open the
circuits.
➢ When working with energized circuits, use only one hand while keeping the rest of your body away from
conducting surfaces.
➢ Before powering the circuits, check for all the connections of the circuit and scope connection. This
avoids shorting or any ground looping that may lead to electrical shocks or damage of equipment.
➢ Double check you’re wiring and circuit connections (use a point-to-point wiring diagram to review when
making these checks).
➢ First apply low voltages to check proper functionality of circuits. Once functionality is ok, increase
voltages to the required levels.
➢ Reduce the voltage or power slowly till it comes to zero.
➢ While Switch of all the power supplies. Let the load be connected at the output for some time, so that it
helps to discharge capacitor or inductor if any, completely.
➢ While Modifying the Circuit, switch off the circuit, Modify the connections based on the requirement.
Reverify the circuit by the faculty member and power up.
Observation Table-
VGS
S. No.
VAK IA GM = ⧋ID/ ⧋VDS RDS = ⧋VDS / ⧋ID
25
Calculation
Model Graph
Result: Thus, the output characteristics of MOSFET were studied and the graph was plotted note down the
following value from the graph sheet.
Discussion: Comparison of the standard result with the result obtained are as follows
Conclusion:
Future Scope
Viva Questions
26
Experiment No 6
Aim: Design and simulate a circuit to verify the transfer characteristics of MOSFET using simulation software
and test the same circuit on the bread board or PEC16MIA trainer and compare the results with the simulated
results.
Theory:
A bipolar junction transistor (BJT) is a current – controlled device and requires base current for current flow in
the collector. Since the collector current is dependent on the Input (or base) current, the current gain is highly
dependent on the junction temperature.
A power MOSFET is a voltage – controlled device and requires only a small input current.
The switching speed is very high and the switching times are if the order of nanoseconds. Power MOSFETS are
finding increasing applications in low – proper high- frequency converters. MOSFET do not have the problems
of second breakdown phenomena as do BJTs. However, MOSFETs have the problems of electrostatic discharge
& require special care in handling. In addition, it is relatively, difficult to protect them under short circuited fault
conditions.
An n – channel depletion – type MOSFET is formed on a P- type silicon substrate with two heavily doped n+
silicon for low resistance connection. The gate is isolated from the channel by a thin oxide layer. The terminates
are called gate, drain and source. The substrate is normally connected to the source. The gate –to –source voltage.
VGS could be either positive or negative. If VGS is negative some of the electrons in the n- channel area will be
repelled and a depletion region will be completely depleted, offering ahigh value of RDS, and there will be no
current flow from drain to source, IDS=0. The value of VGS when this happens is called pinch –off voltage Vp.
On the other hand, if VGS is made positive, the channel becomes wider, and IDS increases due to reduction in
RDS with P-channel depletion–type MOSFET, the polarities of VDS, IDS and VGS are reversed.
An n-channel enhancement- type MOSFET has no physical channel, as shown in figure. If VGS is +ve,
an induced voltage will attract the electrons from P-substrate and accumulate them at the surface beneath the oxide
layer. Sufficient numbers of electrons are accumulated to form a virtual n- channel & the current flows from drain
to source.
STEADY STATE CHARACTERISTIC
To MOSFET is a voltage - controlled device and have very high input impedance. The gate draws a very small
leakage current, in the order of nano-ampere. The current gain, which is the ratio of drain current, ID, to input
gate current, IG, is typically of the order of 1012 .However, the current gain is not an important parameter. The
trans- conductance which is the ratio of drain current to gate voltage defines the transfer characteristics and is very
important parameter.
27
Circuit Diagram:
Connection Diagram
Apparatus Required
1- PEC16M1A trainer
2- Ammeter (0-200mA) MC - 2Nos
3- Voltmeter(0-20V) MC – 2Nos
4- Patch chord
28
Connection Procedure
1. Connect the MOSFET drain, source, gate terminal to MOSFET characteristics circuit
2. Voltmeter is connected to the across of the gate source terminal
3. Connect the ammeter in drain terminal as indicated in connection diagram
4. voltmeter is connected to the across the drain and source terminal
Experimental Procedure
Precautions
➢ No loose wires or metal pieces should be lying on table or near the circuit as they cause short circuits and
sparking.
➢ Avoid using long wires, that may get in your way while making adjustments or changing leads.
➢ Keep the conducting parts and connections out of the way from accidental touching and from any
contacts to test equipment or any parts, connected to other voltage levels.
➢ When working with inductive circuits, reduce voltages or currents to near zero before switching open the
circuits.
➢ When working with energized circuits, use only one hand while keeping the rest of your body away from
conducting surfaces.
➢ Before powering the circuits, check for all the connections of the circuit and scope connection. This
avoids shorting or any ground looping that may lead to electrical shocks or damage of equipment.
➢ Double check you’re wiring and circuit connections (use a point-to-point wiring diagram to review when
making these checks).
➢ First apply low voltages to check proper functionality of circuits. Once functionality is ok, increase
voltages to the required levels.
➢ Reduce the voltage or power slowly till it comes to zero.
➢ While Switch of all the power supplies. Let the load be connected at the output for some time, so that it
helps to discharge capacitor or inductor if any, completely.
➢ While Modifying the Circuit, switch off the circuit, Modify the connections based on the requirement.
Reverify the circuit by the faculty member and power up.
29
Observation Table
VDS =
S No
VGS = ID =
Model Graph
ID
VGS
Result: Thus, the transfer characteristics of MOSFET were studied and the graph was plotted. Note down the
following values from the graph sheet.
Discussion: Comparison of the standard result with the result obtained are as follows
Conclusion:
Future Scope
Viva Questions
30
Experiment No 7
Aim: Design and simulate a circuit to verify the output characteristics of IGBT using simulation software and
test the same circuit on the bread board or PEC16MIA trainer and compare the results with the simulated results.
Theory: -
An IGBT Insulated Gate Bipolar Transistor combines advantages of both BJT and MOSFET. An IGBT have
high input impedance like MOSFET and low on state conduction loses like BJT.
It has three terminals namely Gate, Collector and Emitter instead of Gate, Drain and Source as in MOSFET.
The parameters and their symbols are similar to that of MOSFET except that the subscript D and S have been
changed. The current rating of single IGBT can be up to 400A, 1200V and switching frequency can be up to
20KHz. An IGBT is inherently faster than a BJT. The structure of IGBT is quite similar to MOSFET. The IGBT
conducts in two modes reverse blocking mode and forward blocking mode. If gate – emitter voltage applied is of
sufficient magnitude to surface the base region under gate, device switches to its positive forward conduction state
and current can flow from collector N-region to base N- region.
Circuit Diagram:
Connection Diagram:
31
Connection
Procedure
1. Connect the IGBT collector, emitter and gate terminal to IGBT characteristics circuit
2. Connect voltmeter across gate emitter terminal as soon in the connection diagram
3. Connect ammeter in collector terminal as indicated in the connection diagram
4. Voltmeter is connected to the in between collector and emitter terminal
Experimental Procedure
Precautions
➢ No loose wires or metal pieces should be lying on table or near the circuit as they cause short circuits and
sparking.
➢ Avoid using long wires, that may get in your way while making adjustments or changing leads.
➢ Keep the conducting parts and connections out of the way from accidental touching and from any
contacts to test equipment or any parts, connected to other voltage levels.
➢ When working with inductive circuits, reduce voltages or currents to near zero before switching open the
circuits.
32
➢ When working with energized circuits, use only one hand while keeping the rest of your body away from
conducting surfaces.
➢ Before powering the circuits, check for all the connections of the circuit and scope connection. This
avoids shorting or any ground looping that may lead to electrical shocks or damage of equipment.
➢ Double check your wiring and circuit connections (use a point-to-point wiring diagram to review when
making these checks).
➢ First apply low voltages to check proper functionality of circuits. Once functionality is ok, increase
voltages to the required levels.
➢ Reduce the voltage or power slowly till it comes to zero.
➢ While Switch of all the power supplies. Let the load be connected at the output for some time, so that it
helps to discharge capacitor or inductor if any, completely.
➢ While Modifying the Circuit, switch off the circuit, Modify the connections based on the requirement.
Reverify the circuit by the faculty member and power up.
Observation Table-
VBE =
S. No.
VCE Ic GM = ⧋IC/ ⧋VCE RDS = ⧋VD / ⧋IC
Model Graph
VGS
Result: Thus, the output characteristics of IGBT were studied and the graph was plotted. Note down the
following values from the graph sheet.
33
1-pinch -OFF voltage
Discussion: Comparison of the standard result with the result obtained are as follows
Conclusion:
Future Scope
VIVA QUESTIONS:-
Experiment No 8
Aim: Design and simulate a circuit to verify the transfer characteristics of IGBT using simulation software and
test the same circuit on the bread board or PEC16MIA trainer and compare the results with the simulated results.
Theory: -
An IGBT Insulated Gate Bipolar Transistor combines advantages of both BJT and MOSFET. An IGBT have
high input impedance like MOSFET and low on state conduction loses like BJT.
It has three terminals namely Gate, Collector and Emitter instead of Gate, Drain and Source as in MOSFET.
The parameters and their symbols are similar to that of MOSFET except that the subscript D and S have been
changed. The current rating of single IGBT can be up to 400A, 1200V and switching frequency can be up to
20KHz. An IGBT is inherently faster than a BJT. The structure of IGBT is quite similar to MOSFET. The IGBT
conducts in two modes reverse blocking mode and forward blocking mode. If gate – emitter voltage applied is of
sufficient magnitude to surface the base region under gate, device switches to its positive forward conduction state
and current can flow from collector N-region to base N- region.
Circuit Diagram:
34
Connection Diagram:
Apparatus Required:
1- PEC16M1A trainer
2- Ammeter (0-200mA) MC - 2Nos
3- Voltmeter(0-20V) MC – 2Nos
4- Patch chord
Connection Procedure
1. Connect the IGBT collector, emitter and gate terminal to IGBT characteristics circuit
2. Connect voltmeter across gate emitter terminal as soon in the connection diagram
3. Connect ammeter in collector terminal as indicated in the connection diagram
4. Voltmeter is connected to the in between collector and emitter terminal
Experimental Procedure
1. Now switch ON the 230V AC supply
2. Keep the collector-emitter (VCE) voltage at particular voltage by varying pot2
35
3. Smoothly vary the gate-emitter (VGE) voltage by varying pot1 till the IGBT gate turn ON and note the
voltmeter(VBE) ammeter(IC) reading as soon in table-6
4. Further increase the gate-emitter (VGE) voltage and note the current Ic
5. For different value of collector-emitter voltage (VCE) note the reading as soon in the table-6
6. Plot the Vce Vs Ic in a graph sheet
7. Note down the following values from graph sheet
Precautions
➢ No loose wires or metal pieces should be lying on table or near the circuit as they cause short circuits and
sparking.
➢ Avoid using long wires, that may get in your way while making adjustments or changing leads.
➢ Keep the conducting parts and connections out of the way from accidental touching and from any
contacts to test equipment or any parts, connected to other voltage levels.
➢ When working with inductive circuits, reduce voltages or currents to near zero before switching open the
circuits.
➢ When working with energized circuits, use only one hand while keeping the rest of your body away from
conducting surfaces.
➢ Before powering the circuits, check for all the connections of the circuit and scope connection. This
avoids shorting or any ground looping that may lead to electrical shocks or damage of equipment.
➢ Double check you’re wiring and circuit connections (use a point-to-point wiring diagram to review when
making these checks).
➢ First apply low voltages to check proper functionality of circuits. Once functionality is ok, increase
voltages to the required levels.
➢ Reduce the voltage or power slowly till it comes to zero.
➢ While Switch of all the power supplies. Let the load be connected at the output for some time, so that it
helps to discharge capacitor or inductor if any, completely.
➢ While Modifying the Circuit, switch off the circuit, Modify the connections based on the requirement.
Reverify the circuit by the faculty member and power up.
Observation Table-
VCE=
S No
VBE= IC =
Calculation
36
Model Graph
Result Thus the transfer characteristic of IGBT was studied and the graph was plotted.
Discussion: Comparison of the standard result with the result obtained are as follows
Conclusion:
Future Scope
VIVA QUESTIONS: -
Experiment No 9
Aim: To study and verify the operation single phase SCR half-controlled convertor with R-Load and R-L load
using PEC14M14HW module.
THEORY:
The circuit arrangement of a single – phase full converter is shown in figure with a highly inductive load so
that load current is continuous and ripple free. During the positive half- cycle, thyristors T1& T4 are forward
biased; and when these two thyristors are fired simultaneously at ω t =α, the load is connected to the input supply
through T1&T4. Due to inductive load, thyristors T1& T4 will continue to conduct beyond ω t =π even though the
37
input voltage is already negative. During then negative half cycle of the input voltage, thyristors T3& T2 are
forward biased; and firing of thyristors T3& T2 will apply the supply voltage across thyristors T1& T4 as reverse
blocking voltage. T1& T4 will be turned off due to line or natural commutation and the load current will be
transferred from T1& T4 to. T3& T2 Figure shows the regions of converter operation & figure shows the waveforms
for input voltage, output voltage & output currents. During the period from α to π, the input voltage Vs and input
current ls is positive, and the power flows from the supply to the load. The converter is said to be operated in
rectification mode. During the period from π to π+ α, the input voltage Vs is negative & the input current l s is
positive, and there will be reverse power flow from the load the supply. The converter is said to be operated in
inversion mode. This converter is extensively used in industrial applications up to 15 KW. Depending on the value
of α , the average output voltage could be either positive or negative and it provides two – quadrant operations.
The average output voltage
Circuit Diagram:
The circuit arrangement of a single – phase full converter is shown in figure with a highly inductive load so that
load current is continuous and ripple free. During the positive half- cycle, thyristors T1& T4 are forward biased;
and when these two thyristors are fired simultaneously at ω t =α, the load is connected to the input supply through
T1&T4. Due to inductive load, thyristors T1& T4 will continue to conduct beyond ω t =π even though the input
voltage is already negative. During then negative half cycle of the input voltage, thyristors T3& T2 are forward
biased; and firing of thyristors T3& T2 will apply the supply voltage across thyristors T1& T4 as reverse blocking
voltage. T1& T4 will be turned off due to line or natural commutation and the load current will be transferred from
T1& T4 to. T3& T2 Figure shows the regions of converter operation & figure shows the waveforms for input
voltage, output voltage & output currents. During the period from α to π, the input voltage Vs and input current ls
is positive, and the power flows from the supply to the load. The converter is said to be operated in rectification
mode. During the period from π to π+ α, the input voltage Vs is negative & the input current l s is positive, and
there will be reverse power flow from the load the supply. The converter is said to be operated in inversion mode.
This converter is extensively used in industrial applications up to 15 KW. Depending on the value of α, the average
output voltage could be either positive or negative and it provides two – quadrant operations. The average output
voltage
Circuit Diagram:
38
Apparatus Required:
Connection Procedure:
Experiment Procedure:
40
Calculation:
𝑽𝒎
𝑬𝒅𝒄 = ( 𝟏 + 𝐜𝐨𝐬 𝜶)
𝝅
Result: Thus the SCR Half Controlled Convertor with R and R-L load was studied and their graph was plotted.
Discussion: Comparison of the standard result with the result obtained are as follows
Conclusion:
Future Scope
Viva Question
3. What are the effects of removing the freewheeling diode in single phase semi converter?
41
4. Why is the power factor of semi converters better than that of full converters?
Experiment No: 10
AIM: Modeling & Simulation of Single-Phase Full Wave Converter with R-L Load.
THEORY: The bridge thyristors can only conduct in one direction, but without diodes in the bridge the load
voltage can reverse due to the load inductance, the load current continues to circulate, and current is circulated
back to the mains against the direction of the mains voltage. In fact, the stored energy in the load is generating
back to the supply. This is two-quadrant operation.
42
CIRCUIT DIAGRAM:
PROCEDURE:
1. Make the connections as per the circuit diagram.
2. Verify the connections before simulating.
3. Set the value of resistance.
4. Connect the scope and simulate the circuit.
5. Observe output voltage waveform.
43
6. Note down readings of firing angle and output voltage.
7. Also calculate theoretical and practical values of output voltages and compare.
8. Repeat above steps for various firing angles.
9. For RL-load connect Inductance in series with resistance.
10. Repeat the above steps.
Precautions
➢ No loose wires or metal pieces should be lying on table or near the circuit as they cause short circuits and
sparking.
➢ Avoid using long wires, that may get in your way while making adjustments or changing leads.
➢ Keep the conducting parts and connections out of the way from accidental touching and from any
contacts to test equipment or any parts, connected to other voltage levels.
➢ When working with inductive circuits, reduce voltages or currents to near zero before switching open the
circuits.
➢ When working with energized circuits, use only one hand while keeping the rest of your body away from
conducting surfaces.
➢ Before powering the circuits, check for all the connections of the circuit and scope connection. This
avoids shorting or any ground looping that may lead to electrical shocks or damage of equipment.
➢ Double check you’re wiring and circuit connections (use a point-to-point wiring diagram to review when
making these checks).
➢ First apply low voltages to check proper functionality of circuits. Once functionality is ok, increase
voltages to the required levels.
➢ Reduce the voltage or power slowly till it comes to zero.
➢ While Switch of all the power supplies. Let the load be connected at the output for some time, so that it
helps to discharge capacitor or inductor if any, completely.
➢ While Modifying the Circuit, switch off the circuit, Modify the connections based on the requirement.
Reverify the circuit by the faculty member and power up.
Simulated Model:
44
SIMULINK MODEL OF SINGLE PHASE FULL WAVE CONVERTER WITH RL LOAD:
Result: Thus, the Single-phase Full wave converter with R-L load was studied and their graph was plotted.
45
Discussion: Comparison of the standard result with the result obtained are as follows
Conclusion:
Future Scope
Viva Question
4. What are the advantages of three phase rectifier over a single-phase rectifier?
5. What is the difference between half wave and full wave rectifier?
6. If firing angle is greater than 90 degrees, the inverter circuit formed is called as?
46
Experiment No :11
AIM: Design and simulate a circuit to obtain 3Φ SCR HALF CONTROLLED CONVERTER
WITH R-LOAD using MATLAB Software 230V 5Amp Input to 10V 100mAmp current
rating
THEORY:
47
APPARATUS: MATLAB SOFTWARE
Procedure:
• Also calculate theoretical and practical values of output voltages and compare.
• Repeat above steps for various firing angles.
48
Model Graphs:
49
Result: The waveform was observed is identical to model waveform
Discussion: Comparison of the standard result with the result obtained are as follows
Conclusion:
Future Scope
Viva Question
3. What are the effects of removing the freewheeling diode in single phase semi converter?
4. Why is the power factor of semi converters better than that of full converters?
50
Experiment No 12
AIM: Design and simulate a circuit to obtain 3Φ SCR FULL CONTROLLED CONVERTER
WITH R-LOAD using MATLAB Software 230V 5Amp Input to 10V 100mAmp current
rating
THEORY:
Procedure:
1. Make the connections as per the circuit diagram.
2. Verify the connections before simulating.
3. Set the value of resistance.
4. Connect the scope and simulate the circuit.
51
5. Observe output voltage waveform.
6. Note down readings of firing angle and output voltage.
7. Also calculate theoretical and practical values of output voltages and compare.
8. Repeat above steps for various firing angles.
9. For RL-load connect Inductance in series with resistance.
10. Repeat the above steps.
Precautions
➢ No loose wires or metal pieces should be lying on table or near the circuit as they cause short circuits and
sparking.
➢ Avoid using long wires, that may get in your way while making adjustments or changing leads.
➢ Keep the conducting parts and connections out of the way from accidental touching and from any contacts
to test equipment or any parts, connected to other voltage levels.
➢ When working with inductive circuits, reduce voltages or currents to near zero before switching open the
circuits.
➢ When working with energized circuits, use only one hand while keeping the rest of your body away from
conducting surfaces.
➢ Before powering the circuits, check for all the connections of the circuit and scope connection. This avoids
shorting or any ground looping that may lead to electrical shocks or damage of equipment.
➢ Double check your wiring and circuit connections (use a point-to-point wiring diagram to review when
making these checks).
➢ First apply low voltages to check proper functionality of circuits. Once functionality is ok, increase voltages
to the required levels.
➢ Reduce the voltage or power slowly till it comes to zero.
➢ While Switch of all the power supplies. Let the load be connected at the output for some time, so that it
helps to discharge capacitor or inductor if any, completely.
➢ While Modifying the Circuit, switch off the circuit, Modify the connections based on the requirement.
Reverify the circuit by the faculty member and power up.
Model Graphs:
52
Result: The waveform was observed is identical to model waveform
Discussion: Comparison of the standard result with the result obtained are as follows
Conclusion:
Future Scope
Viva Question
3. What are the advantages of three phase rectifier over a single phase rectifier?
4. What is the difference between half wave and full wave rectifier?
53
Experiment No 13
THEORY:
CLASS-ACOMMUTATION CLASS-BCOMMUTATION
C1
CLASS-CCOMMUTATION CLASS-DCOMMUTATION
54
CLASS-E COMMUTATION
1
D1
2 2N1597 T1
V1 C1
R1
CLASS-F COMMUTATION
D1
2N1597
V1
R1
100Ω
120 Vrms
Apparatus Required: Thyristor forced commutation trainer, CRO & Patch chords
Procedure:
CLASSA:ConnectG1oftriggeringcircuittoG1ofthepowercircuit
Connect K1 of triggering circuit to K1 of the power circuit
Connect +15V to A1 terminal ofSCR1
Connect K1 of SCR to inductor L1
Connect another end of L1 to C2 and resistance Rl2
Connect other end of capacitor C2& Resistance RL2 to – 15 V DC
Connect CRO probe across the resistor RL2.
Switch on the trainer kit ON/OFF switch, 15V Dc Supply, auxiliary switch of the
55
SCR and the main SCR switch.
Slowly vary the frequency knob and observe the waveforms & Plot
56
Also connect the K1 OF SCR1 to load resistor RL1
Connect K1of SCR1 to +15V and Connect the CRO across RL1
Switch on the trainer kit ON/OFF switch, 15V Dc Supply, auxiliary switch of
the SCR and the main SCR switch.
Fix the frequency knob at certain value, vary the duty cycle knob step by
step, and observe the waveforms & Plot them.
CLASS E:
ConnectG1oftriggeringcircuittoG1ofthepowercircu
it
ConnectK1oftriggeringcircuittoK1ofthepowercircuit
Connect +15V to A1 terminal of SCR1 and to
capacitor C1 Connect other terminal of C to Load
and external pulse P2. Connect K1 of SCR1 to
external pulse P1.
Switch on the trainer kit ON/OFF switch, 15V Dc Supply, auxiliary switch of
the SCR1.
Fix the frequency knob at certain value, vary the duty cycle knob step by
step, and observe the waveforms & Plot them
Precautions
➢ No loose wires or metal pieces should be lying on table or near the circuit as they cause short circuits
and sparking.
➢ Avoid using long wires, that may get in your way while making adjustments or changing leads.
➢ Keep the conducting parts and connections out of the way from accidental touching and from any
contacts to test equipment or any parts, connected to other voltage levels.
➢ When working with inductive circuits, reduce voltages or currents to near zero before switching open
the circuits.
➢ When working with energized circuits, use only one hand while keeping the rest of your body away
from conducting surfaces.
➢ Before powering the circuits, check for all the connections of the circuit and scope connection. This
avoids shorting or any ground looping that may lead to electrical shocks or damage of equipment.
➢ Double check you’re wiring and circuit connections (use a point-to-point wiring diagram to review
when making these checks).
➢ First apply low voltages to check proper functionality of circuits. Once functionality is ok, increase
voltages to the required levels.
➢ Reduce the voltage or power slowly till it comes to zero.
➢ While Switch of all the power supplies. Let the load be connected at the output for some time, so that
it helps to discharge capacitor or inductor if any, completely.
➢ While Modifying the Circuit, switch off the circuit, Modify the connections based on the
requirement. Reverify the circuit by the faculty member and power up.
Model Graphs:
CLASS-A COMMUTATION
CLASS-BCOMMUTATION
CLASS-CCOMMUTATION
CLASS-DCOMMUTATION
CLASS-ECOMMUTATION
CLASS-F COMMUTATION
Results: The output waveforms of the forced commutation and natural commutation are
observed.
Discussion: Comparison of the standard result with the result obtained are as follows
Conclusion:
Future Scope
Viva Questions
Theory:
Reactive loads present two basic requirements of the trigger circuits in order to provide symmetry
and proper control.
a) Synchronization must be obtained from the supply voltage rather than SCR voltage.
b) The trigger signal must be continuous during most of the desired conduction period. UJT trigger circuit
is suitable for resistive loads. However, it cannot provide continuous triggering signal due to its typical
working principles. Hence circuitry is required to extend the first firing pulse of UJT there by maintaining
continuous trigger signal. This is called as extended pulse triggering. As shown in figure, UJT is connected
across AC supply line by means of the bridge rectifier D1 D2 D3 D4. Thus, UJT trigger in both halves of the
AC cycle. The time constant of potentiometer R in conjunction with capacitor C determine the delay angle at
which the UJT delivers its first pulse to the primary of pulse transformer during each half cycle. These pulses
are coupled to gates of auxiliary SCR’s. Four auxiliary SCR’s A1, A2, A3, A4 forms the extended pulse
circuit.
Control transformer gives 12 VAC supply to four auxiliary SCR’s. SCR’s A1 &A4 are connected to TS
1 & TS 4 secondary of control transformer T1 and SCR’s A2 & A3 are connected to TS 2 & Ts 3 secondary
of control transformer T1. As shown in figure, in phase tapping of TS2 & Ts3 is connected the SCR’s A2 &
A3. Because of this specific type of transformer connections, anodes of SCR A1 & A4 are positive in positive
half cycle & when they get UJT pulse, A1 & A4 will turn on in positive half cycle. But as Anodes of A2 &
A3 are at negative they will remain OFF.
In negative half cycle, SCR A2 & A3 anode will be positive and A1, A4 will get reverse bias. When
UJT pulse reaches gate of A2& A3, they will turn on. But A1 & A4 remains OFF. Thus, in positive half cycle
depending on RC combination of UJT circuits SCR A1 & A4 will provide continuous trigger signal at firing
angle, while is negative half cycle SCR A2 & A3 will provide continuous trigger signal at the same firing
angle.
Zener diode Dz is used in configuration with resistor R1 to clip the AC gate voltage to prevent excessive
power dissipation in the gates of the main SCR’s. The R – C network R2 –C1 also limits the gate dissipation
in main SCR’s while delivering a momentarily higher gate pulses at the beginning of the conduction period to
accelerate the switching action in the main SCR’s.
Resistance Trigger:
AC supply which drives the SCR can be used directly through proper resistance to
trigger gate. As shown in figure, AC supply through RV1 drives the gate.
The SCR will trigger when the instantaneous anode voltage e is,
E=Vd +Vgt + lgt *RV
Vd = Voltage drops across diode D
lgt = Gate current to trigger the thyristors.
Vgt = Gate voltage corresponding to lgt.
The minimum triggering angle is obtained when R is zero and increases as R increases.
Thus, power delivered to load decreases. Since the thyristors T1 latches into conduction, the first timed l gt is
reached, and because the anode voltage and gate current are in phase, the trigger angle cannot be beyond and
900(giving phase control from 50 to 100 %only).
Circuit Diagram:
Apparatus Required:
1. PEC14M12Module
2. Patch Cords
3. Digital Multimeter
4. Rheostat
5. CRO.
Connection Procedure:
Experiment Procedure:
√𝟐𝑽
𝑽𝒅𝒄 = ( 𝟏 + 𝐜𝐨𝐬 𝜶)
𝟐𝝅
Model graph
Result
Discussion: Comparison of the standard result with the result obtained are as follows
Conclusion:
Aim: To study analyze, and verify the operation of resistance triggering circuit using RC Firing module.
THEORY:
Reactive loads present two basic requirements of the trigger circuits in order to provide symmetry
and proper control.
a. Synchronization must be obtained from the supply voltage rather than SCR voltage.
b. The trigger signal must be continuous during most of the desired conduction period. UJT trigger circuit
is suitable for resistive loads. However, it cannot provide continuous triggering signal due to its typical
working principles. Hence circuitry is required to extend the first firing pulse of UJT there by
maintaining continuous trigger signal. This is called as extended pulse triggering. As shown in figure,
UJT is connected across AC supply line by means of the bridge rectifier D1 D2 D3 D4. Thus, UJT
trigger in both halves of the AC cycle. The time constant of potentiometer R in conjunction with
capacitor C determine the delay angle at which the UJT delivers its first pulse to the primary of pulse
transformer during each half cycle. These pulses are coupled to gates of auxiliary SCR’s. Four
auxiliary SCR’s A1, A2, A3, A4 forms the extended pulse circuit.
Control transformer gives 12 VAC supply to four auxiliary SCR’s. SCR’s A1 &A4 are connected to TS
1 & TS 4 secondary of control transformer T1 and SCR’s A2 & A3 are connected to TS 2 & Ts 3 secondary
of control transformer T1. As shown in figure, in phase tapping of TS2 & Ts3 is connected the SCR’s A2 &
A3. Because of this specific type of transformer connections, anodes of SCR A1 & A4 are positive in positive
half cycle & when they get UJT pulse, A1 & A4 will turn on in positive half cycle. But as Anodes of A2 &
A3 are at negative they will remain OFF.
In negative half cycle, SCR A2 & A3 anode will be positive and A1, A4 will get reverse bias. When
UJT pulse reaches gate of A2& A3, they will turn on. But A1 & A4 remains OFF. Thus, in positive half cycle
depending on RC combination of UJT circuits SCR A1 & A4 will provide continuous trigger signal at firing
angle, while is negative half cycle SCR A2 & A3 will provide continuous trigger signal at the same firing
angle.
Zener diode Dz is used in configuration with resistor R1 to clip the AC gate voltage to prevent excessive
power dissipation in the gates of the main SCR’s. The R – C network R2 –C1 also limits the gate dissipation
in main SCR’s while delivering a momentarily higher gate pulse at the beginning of the conduction period to
accelerate the switching action in the main SCR’s.
Resistance –Capacitance Trigger: -The role of the capacitor is to shift the phase of the anode voltage, so
that the positive gate current can be supplied even after the peak of the anode voltage.
By varying resistance R, the firing angle can be controlled from 0 to 1800 theoretically. The capacitor charges
to the negative peak of the AC voltage in every negative half cycle through diode. During the positive half
cycle, it begins to charge through resistance R. When the voltage across the capacitor reaches, the required
positive value, SCR is triggered, and the capacitor voltage remains almost constant.
Circuit Diagram:
Apparatus Required:
1. PEC14M12Module
2. Patch Cords
3. Digital Multimeter
4. Rheostat
5. CRO.
CONNECTION PROCEDURE:
√𝟐𝑽
𝑽𝒅𝒄 = ( 𝟏 + 𝐜𝐨𝐬 𝜶)
𝟐𝝅
Model graph
Result
Discussion: Comparison of the standard result with the result obtained are as follows
Conclusion:
Future Scope
Viva Question
1. Explain how synchronization of the triggering circuit with the supply voltage across SCR is achieved?
3. What is the maximum value of firing angle which can be obtained from the circuit?