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Lab Report 07

This lab report from North South University's Electrical & Computer Engineering department details Experiment No. 05, which focuses on the study of switching characteristics of MOSFETs. It outlines the objectives, theory, experimental setup, components used, and findings related to the operation of NMOS and PMOS transistors. The report includes experimental data, graphs, and contributions from group members.

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21 views13 pages

Lab Report 07

This lab report from North South University's Electrical & Computer Engineering department details Experiment No. 05, which focuses on the study of switching characteristics of MOSFETs. It outlines the objectives, theory, experimental setup, components used, and findings related to the operation of NMOS and PMOS transistors. The report includes experimental data, graphs, and contributions from group members.

Uploaded by

jawad allhamid
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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NORTH SOUTH UNIVERSITY

DEPARTMENT OF ELECTRICAL & COMPUTER ENGINEERING


LAB REPORT
Summer 2021

COURSE NAME: Analog Electronics Lab


COURSE CODE: EEE/ETE 111 L
SECTION: 09
COURSE INSTRUCTOR: Tasmina Imam
EXPERIMENT NO: 05
EXPERIMENT NAME:

Study of Switching Characteristics

EXPERIMENT DATE: 25th August 2021


DATE OF SUBMISSION: 9 August 2021
GROUP NUMBER: 07
SUBMITTED TO: Tasmina Imam

SUBMITTED BY STUDENT ID SCORE


1.Mohammad Iftekhar Bin Ashraf 2013199645
2. Nuzhath Tabassum Orpaa 1931052042
3. Ahanaf Tahomid 1831920642
4. Md. Mehraj Hossain Sani (writer) 2013623043
5. Md Kamran Ahmed 2012356643
Objectives:

• Study of switching characteristics


Theory:
The MOSFETs are the most widely used FETs. MOSFET means Metal Oxide Semiconductor
FET.
There are two types of MOSFETs:
1. D-MOSFET: Depletion MOSFET
2. E-MOSFET: Enhancement MOSFET
Both of the above types have two sub-types:
1. N-channel or simply n-type (also called NMOS in short)
2. P-channel or simply p-type (also called PMOS in short)

Figure: Schematic cross section of an enhancement type NMOS transistor


Figure: Symbols for Enhancement NMOS Transistor

Figure: Symbols for Enhancement PMOS Transistor

MOSET has three terminals: Gate (G), Source (S), and Drain (D).
In certain cases, the transistors have a fourth terminal, which is called the bulk or the body
terminal.
A common application of MOSFETs is switches in analog and digital circuits. Switches in
analog circuits can be used for example in data acquisition systems, where they serve as analog
multiplexors, which allow the selection of one of several data inputs.
A simple example of a switching circuit based on an n-type enhancement transistor and a resistor
is shown below. The voltage applied to the gate controls the conductance of the channel. A zero
or low value of VGS, the conductance is very low so that is the transistor acts like an open circuit
and no current flows through the load resistor RL. When VGS exceeds the threshold, the channel
conductance becomes higher and the transistor acts like a closed switch. The channel resistance
is not getting zero but the resistance is getting small so that the output voltage Vout is getting
small.
Fig.(a) below shows an NMOS switching FET and its models for Vin = 0 (Fig. (b)) and Vin =
+5V (Fig. (c)). In each case, the FET is modeled as a mechanical switch.

Figure: NMOS transistor switch

As for PMOS, a negative value of VGS has to be applied to turn the transistor on. The operation
can be described using the curves shown in figure below. When the input voltage, VGS, of the
transistor shown is zero, the MOSFET conducts virtually no current, and the output voltage, Vout,
is equal to VDD. When VGS is equal to 5V , the MOSFET Q-point moves from point A to point
B along the load line, with VDS = 0.5V . Thus, the circuit acts as an inverter. The inverter forms
the basis of all MOS logic gates.
Figure: MOSFET Switching Characteristic Curve

Components:
Serial No Component Detail Specification Quantity

1. MOSFET IRF540 1 piece each


2. Resistor 100kΩ 1 piece each
3. POT 1 unit
4. Trainer Board 1 unit
5. DC power supply 2 unit
6. Digital Multimeter 1 unit
7. Chords and wire As required
Experimental Setup:

Figure: Experimental Circuit Using Vds=15V

Figure: Experimental Circuit Using Vds=20V


Experimental Data Table:
For VDS=15V:
For VDS=20V:
Graphs:

Graph: Characteristics curve for VDD=15V


Graph: Characteristics curve for VDD=20V

Discussion:
By experimenting with this experiment, we learned the functions of MOSFETs. We understand
that MOSFET is used for amplification and as well as switching purposes depending on its
characteristics. From the characteristic curve of MOSFETs, we can say that VGS must be
positive to conduct currents. When the gate to source voltage is greater than threshold voltage
(set by designer) and VDS is greater than VGS-VT then MOSFET conducts in saturation region
and hence used as an amplifier and when VDS is less than VGS- VT then it is in triode region
and used as a switch similarly when VGS is zero then it is operated in cutoff region and used in
digital electronic as a switch.
Name Student Id Contribution
1.Mohammad Iftekhar Bin Ashraf 2013199645 Cover page ,Discussion and Diagram
2. Nuzhath Tabassum Orpaa 1931052042 Graph for VDD=20V
3. Ahanaf Tahomid 1831920642 Components
4. Md. Mehraj Hossain Sani(Writer) 2013623043 Theory, Graph and Data table
5. Md Kamran Ahmed 2012356643 Objectives

Attachments:

Figure: Experimental Circuit Using Vds=15V


Figure: Experimental Circuit Using Vds=20V
1. Lecture Slide
2. Lab Manual

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