Analog Electronics (Diode Circuits)

1. Consider the following semiconductor diodes

1. Germanium diode 2. Silicon diode 3. Tunnel diode 4. Schottky diode
The correct increasing order of forward voltage drop of these diodes is:

(a) 1, 3, 2, 4 (b) 1, 2, 3, 4
(c) 3, 4, 2, 1 (d) 3, 1, 4, 2

2. The reverse saturation current of a biased p-n junction diode increases 32 times due to a
rise in ambient temperature. If the original temperature was 400C, what is the final
temperature?

(a) 900C (b) 720C

(c) 450 C (d) 500 C

3. A voltage source VAB = 4 sinωt is applied to the terminals A and B of the circuit shown in
the given figure. The diodes are assumed to be ideal. The impedance offered by the circuit
across the terminals A and B is

(a) 5 Ω

(b) 10 Ω

(c) 15 Ω

(d) 20 Ω

4. Assertion (A): In a p-type semi-conductor, with increase in the level of doping at a

fixed temperature, the hole concentration increases but the electron
concentration falls.
Reason (R): Law of mass action holds good in case of semi-conductors.
(a) Both A and R are true and R is the correct explanation of A.
(b) Both A and R are true but R is not the correct explanation of A
(c) A is true but R is false
(d) A is false but R is true

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 Analog Electronics (Diode Circuits)

5. For the circuit shown V  0.7V the transfer characteristic curve ( V0 vs Vi ) is

6. The change in forward bias voltage for doubling the current for a Ge diode at room
temperature is?

(a) 36 mV (b) 18 mV
(c) 0.2 V (d) 0.3 V

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 Analog Electronics (Diode Circuits)

7. The dynamic resistance of Si diode at room temperature when it conducts a forward

current of 1 mA is_______________.

(a) 1 k (b) 100 

(c) 52  (d) 26 

8. The primary function of a clamper circuit is to

(a) Suppress variations in signals voltage
(b) Raise the positive cycle of the signal
(c) Lower negative cycle of the signal
(d) Introduce a DC level into an AC signal

9. For the circuit shown the current and voltage are

(a) 0, -2.5 V

(b) 0, 2.5 V

(c) 0.625 mA, 0V

(d) 0.625 mA, -2.5 V

10. The percentage increment in reverse current of a ‘Si’ junction diode when temperature
increased by 10 C is ___________
(a) 0.7 (b) 7
(c) 0.3 (d) 3

11. For the ideal diode circuit shown, the output voltage range is

(a) 0 to 6V

(b) -3 to 6V

(c) 0 to 9V

(d) -6 to 3V

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 Analog Electronics (Diode Circuits)

12. For the circuit shown below, V ranges from – 10V to +10V and the diode is ideal.
in
Which of the following is the transfer characteristics for the circuit shown

13. Each diode in figure has V  0.6V & r  0 . Both the diodes will be ON if
 d

(a) V  3.9V
s
(b) V  4.9V
s
(c) V  6.3V
s
(d) V  5.3V
s

14. A 230V, 50 Hz sinusoidal source feeds a half wave rectifier through a 16:1 step down
transformer, the average o/p Voltage is ___________
(a) 6.47 V (b) 12.94 V
(c) 14.38 (d) 20.33 V

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 Analog Electronics (Diode Circuits)

15. In the circuit shown below, the average value of vo(t) will be

(a) 0

(b) Vm /

(c) Vm / 2

(d) Vm

16. Figure given below shows a simple circuit for charging a battery assume
V  12 V, R  100 , Also assume that V is sinusoidal signal with a peak amplitude of 24V
B S
and that the diode has piece wise linear characteristics with V  0.6V and r  0 . The peak
 f
diode current and the fraction (percent) of the cycle over which the diode conducts,
respectively are

(a) 190mA, 32.41%

(b) 141mA, 28.41%

(c) 114mA, 28.41%

(d) 114mA, 32.41%

17. A 5V reference is drawn from the circuit shown in figure. If the zener diode is of 5 mW

and 5V, then Rz will be

(a) 50 

(b) 500 

(c) 5000 

(d) 50000 

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 Analog Electronics (Diode Circuits)

18. Match List-I (Device) with List-II (Application) and select the correct answer using the
code given below the Lists :
List- I List-II
A. Diode 1. Amplifier
B. Transistor 2. Oscillator
C. Tunnel Diode 3. Rectifier
D. Zener Diode 4. Voltage Regulator

Codes:
A B C D A B C D
(a) 4 1 2 3 (c) 4 2 1 3
(b) 3 2 1 4 (d) 3 1 2 4

19. A Zener diode regulator shown in the figure given above is to be designed to meet the
following specifications:
IL = 10 mA, V0 = 10 V, Vin varies from 30 V to 50 V. The Zener diode has Vz = 10 V and Izk
(knee current) = 1 mA. For satisfactory operation, which one of the following is correct?

(a) R  1800 

(b) 2000   R  2200 

(c) 3700   R  4000 

(d) R  4000 

20. For the circuit shown 0  IL  4mA and 2mA  IZ  8mA . The required range of Vi for
satisfactory operation is ____________.

(a) 80 ≤ Vi ≤ 90V

(b) 80 ≤ Vi ≤ 100V

(c) 90 ≤ Vi ≤ 100V

(d) 60 ≤ Vi ≤ 110V

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 Analog Electronics (Diode Circuits)

21. For the diode circuit shown V  5V, V  0.7V for diode R is 10 . The value of I is
z  f
(a) 98 mA

(b) 186 mA

(c) 176 mA

(d) 100 mA

22. In each of the ideal diode circuits in figure, V is a 1 kHz, 5 V peek sinewave. Calculate
i
peak value of V (positive and negative values)
o

(a) (1 V, 0 V)

(b) (1 V, -4 V)

(c) (0 V, -1 V)

(d) (1 V, -1 V)

23. Given P
max
 14mW for each diode, determine the I
max
for V
imax 
 2.7V. V  0.7V
D 

(a) 20 mA (b) 2 mA
(c) 1 mA (d) 0.5 mA

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 Analog Electronics (Diode Circuits)

24. The output of the network of figure if the input is a 30 V square wave with
V  10V and V  0.7V .
Z D

(a) (10V, -10V)

(b) (0.7V, -0.7V)

(c) (10.7V, -10.7V)

(d) (10.7V, 0V)

25. A zener diode with V  4.3V has r equal to 22 when I  20mA . Calculate the upper
z z z
and lower limits of V when I changes by  5mA
Z z
(a) 4.12V, 4.40V (b) 4.41V, 4.19V
(c) 4.3V, 4.3V (d) 4.31V, 4.29V

26. The forward characteristics of the circuit shown below, is__________.

(a) (b)

(c) (d)

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 Analog Electronics (Diode Circuits)

27. In the circuit shown below, The zener diode regulates at 50 V over a range of diode
current from 5 to 40 mA. The maximum possible value of I is _____________.
L

(a) 35 mA

(b) 26 mA

(c) 31 mA

(d) 29 mA

28. The circuit shown in figure has a source voltage as shown in the graph. The current
through the circuit will be

(a) (b)

(c) (d)

29. Consider a silicon sample doped with N  1  1015 cm3 donor atoms. Assume that the
D
intrinsic carrier concentration N  1.5  1010 cm3 . If the sample is additionally doped with
i
N  1  1018 cm3 acceptor atoms, the approximate number of electrons cm3 in the
A
sample, at T = 300 K, will be ______________.

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 Analog Electronics (Diode Circuits)

30. The value of the current through the diode D is __________mA.

2

31. In the circuit shown below. If the input to the circuit is given as shown below then the
output is

(a) (b)

(c) (d)

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 Analog Electronics (Diode Circuits)

 
32. In the given circuit, the expression for output voltage V will be
0

 V 
(a) V   V log i  log I 
0 T R S
 1 
 V 
(b) V   V log i  log I 
0 T R S
 1 
 V 
(c) V  2V log i  log I 
0 T R S
 1 
 V 
(d) V  2V log i  logI 
0 T R S
 1 

33. Given a periodic square wave of period T as an input to the circuit shown below. Let T ≫
RC then the output of the above circuit will be

(a) (b)

(c) (d)

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 Analog Electronics (Diode Circuits)

34. The resistivity of uniformly doped n – type silicon is 0.5  cm . If the electron mobility

 

n
is 1250cm2 V  sec and the charge of the electron is 1.6  1019 coulomb, the donor

concentration N   in the sample is?

D
(a) 2  1016 cm3 (b) 1  1016 cm3
(c) 2.5  1015 cm3 (d) 2  1015 cm3

35. The i – v characteristics of the diode in the circuit given below are

 v  0.7
 A, V  0.7V
i   500
 0 A, V  0.7V

The current in the circuit is

(a) 10 mA (b) 9.3 mA

(c) 6.67 mA (d) 6.2 mA

36. In the figure, assume that the forward voltage drops of the PN diode D and Schotky
1
diode D are 0.7 V and 0.3 V, respectively. If ON denotes conducting state of the diode and
2
OFF denotes non conducting state of the diode, then in the circuit.

(a) Both D and D are ON

1 2
(b) D is ON and D are OFF.
1 2
(c) Both D and D are OFF.
1 2
(d) D is OFF and D are ON.
1 2

37. Two silicon diodes, with a forward voltage drop of 0.7V, are used in the circuit shown in
the figure. The range of input voltage V for which the output voltage V  V , is
i 0 i

(a) 0.3V  V  1.3V

i
(b) 0.3V  V  2V
i
(c) 1.0V  V  2.0V
i
(d) 1.7V  V  2.7V
i

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 Analog Electronics (Diode Circuits)


38. In the circuit shown below,   2 , voltage across the diode V  0.7V
Y  and R  0
f
Assume initially when switch S is open V  2.2V , then the incremental resistance is the
0
circuit is _____________  .

39. In the circuit shown below, the range of R , that will result in V being maintained at
L RL
10 V is

(a) (b)

(c) (d)

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 Analog Electronics (Diode Circuits)

Solutions

1. Ans: (d)

2. Ans: (a)
(T2  T1 )

Solution: I I 2 10
0New 0old
( T2 T1 )

2 10  32  25
T2  T1
 5 => T2 = 90oC
10

3. Ans: (b)
Solution: Diode D1 conducts through 10  on the extreme right and diode D2 is blocked
Diode D2 conducts and diode D1 blocks. In both cases impedance offered by the circuit
across terminal AB is 10 Ω

4. Ans: (a)

5. Ans: (a)
Solution: When Vi≤4.03V D-off => V0=3.33V

When Vi>4.03V D-on => V0= Vi

6. Ans: (b)

 V 


 V 

 D1   D2 
   

 V 


 V 

 t   t 
Solution: I I e  
,I I e  
D 0 D 0
1 2

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 Analog Electronics (Diode Circuits)

I 2 I
D D
2 1
VD VD

 VD  VD 

 2 1 
2 1  
Vt Vt


Vt 

e  2e => e 
2

VD  V ln2 = 18 mV
t

7. Ans: (c)
Solution:   2 for Si
V
R  T  52
ac I
D

8. Ans.: (d)

9. Ans: (a)
Solution: The equivalent circuit is ( apply Thevenin equivalent across diode for 10V and 5V )

So the diode is OFF I  0

D
V  2.5  5  2.5V
D

10. Ans: (b)

Solution: For 100 C rise in temperature currents become double
So, For 10C rise in temperature I I  20.1  = 1.07
0New 0old  

% increase in current = 7%

11. Ans: (c)

 
Solution: V  3  0  Diode is ON
i
V  3  Diode is ON  V  V  3
i 0 i
V  3  Diode is OFF  V  0
i 0

When V  3  V  V  3
i 0 i
As V  3 to 6V
i
V  0 to 9V
0

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 Analog Electronics (Diode Circuits)

12. Ans: (d)

Solution: For V  7V , D is ON, D is OFF
in 1 2
 V  7V
0
For V  1V , D is ON, D is OFF
1 2 1
 V  1V
0
For 1V  V  7V
1
Both D & D are OFF
1 2
So V  V
0 in

13. Ans: (a)

Solution: For V  0.6V , D2 will be ON
1
If both diode are ON,
V  0.6  V V V V V  0.6
s 1 s 1  1  1
5 5 0.5 0.5
V  0.6  V  V  V
s 1 s 1  2V  2V  1.2
5 1 1
2V  5.4
V  s  0.6V
1 22
 V  3.9V
s

14. Ans: (a)

Solution: Primary voltage = 230 2
230 2
Secondary maximum voltage = Vm   20.33V
16
Vm
Vavg   6.47Volts


15. Ans: (b)

Solution: For positive half cycle diode will be off and conducts only for negative half cycle
The average value of V0(t)
2

V m sin m t d  t
Vm   cos  t 
2

Vav = 
=
2 2
 Vm
Vav =


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 Analog Electronics (Diode Circuits)

16. Ans: (d)

Solution: V maximum amplitude of sinusoidal voltage = 24V
m
24  12  0.6
I   I  114mA
D 100 D
Let  be the angle of conduction of the diode
C
V  t   V sin   24sin 
s m
Diode conducts when V  V  V
B 
i.e. V  12  0.6V
s
24 sin   12.6 >0
12.6
sin      31.660
24
From the above characteristics, diode conducts for   1800  2  31.60
C

  116.660
c
116.66
 %   100%
C 360
%  32.41%
C

17. Ans: (c)

Solution: Zener diode = 5 mW

I Z VZ  5  103

5  10 3
IZ   1  10 3  1 mA
5

Current flows through the circuit is = 1 mA

10  5
RZ   5K
1m

18. Ans: (d)

Solution: Device : Application
Diode : Rectifier
Transistor : Amplifier
Tunnel diode : Oscillator
Zener diode : Voltage Regulator

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 Analog Electronics (Diode Circuits)

19. Ans: (a)

Solution: Given data

IL = 10 mA, V0 = 10 V, Vin = 30 V to 50 V
Vz = 10 V
knee current = IZmin = 1mA
Imin = IZmin + IL= 11mA
30  Vz
11  10-3 =
R
30  10 20  10 3
Rmax = =
11  10 3 11
Rmax = 1818 
R  1818

20. Ans: (d)

Solution: Imin  IZmin  ILmin  2mA
Imax  IZmax  ILmax  12mA
Vi min  Imin .5  103  50  60V
Vi max  Imax .5  103  50  110V

21. Ans: (b)

Solution: Diode and zener are forward bias i.e Zener acts as simple diode
 10  0.7 
I   186mA
 50 

22. Ans: (b)

Solution: When V  0, D is cutoff and D is conducting.
i 1 2
The output becomes 1 V.
When V  0, D is conducting and D is cut – off.
i 1 2
The output is V  V  1 V
0 i
V0peak  Vipeak  1  5  1 = - 4

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 Analog Electronics (Diode Circuits)

23. Ans: (b)

Solution: For V  0 Diode will be in forward bias condition
i
2k 2k  1k
V  V  V = 2.7 V – 0.7 V= 2 V
R i D
2V
I  = 2 mA
max 1k

24. Ans: (c)

Solution: For V  30V
i
Z forward biased at 0.7 V
1
Z reverse biased at zener potential
2
V  10V
Z
2
V  V  V = 0.7 + 10 = 10.7V ;
0 Z Z
1 2
Similarly in –ve half cycle V  10.7V
0

25. Ans: (b)

 
Solution: V   I  r   5mA  22   110mV
z z z
V  V  V  4.3V  110mV  4.41V
z max z z
V  V  V = 4.3V – 110mV= 4.19V
z min z z

26. Ans: (b)

Solution:
VD  0.7  VD0  IDrd
ID  (VD - (0.7  VD0 )) rd
From equation it is clear that graph will be linear.

27. Ans: (a)

Solution: The zener diode current varies from 5 mA to 40 mA for the regulating voltage of
50 V. Also current through resistor R should not exceed the maximum current rating of Zener
diode i.e I  40mA
R
Also we can write, I I I
Lmax Rmax Zenermin

Hence, I  40  5  35mA
Lmax

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 Analog Electronics (Diode Circuits)

28. Ans: (b)

Solution: For the duration of T  (100,200) diode will be conduction. Hence current in the
circuit for this duration will I=1mA.
At T=200 voltage is having a sharp transition and diode will not go in off state immediately
and will behave like short circuit, hence current =-1mA will flow in the circuit.

29. Ans: 225 to 226

Solution: For a compensated p – type semiconductor, the minority carrier election
concentration is given by
n2 2.25  1020
n  i   225.2cm3
0
 N N
A D   18
 10  10 

15 

30. Ans: 3.1 to 3.2
Solution: I  I  I
1 2
0.7
I I
3.3k 2
Also, 20  0.7  0.7  5.6k  I  0
I = 3.32 mA
I  3.11mA
2

31. Ans: (c)

Solution: Since i/p is having bigger value in –ve side. Hence proper o/p will start from t1
V  5V
0
Using KVL:
20V  V  5V  0
C
V  25V
C
The capacitor will therefore charge up to 25 V
R  0 with E  V  5V . For the period t  t the network will appear as
TH TH 2 3

Using KVL
10V  25V  V  0
0
V  35V
0

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 Analog Electronics (Diode Circuits)

32. Ans: (a)

V
Solution: i  I and
R
1
VD

II e VTT
S
Taking log on both sides, we get

D T 
V  V logI  logI
S 
And V  V
0 D

0 T 
V  V logI  logI
S 
 V 
And V  V  log i  log I 
0 T R S
 1 
And for Germanium,   1
 V 
V   V  log i  log I 
0 T R S
 1 

33. Ans: (c)

Solution: The above circuit can be viewed in two part. 1st one consisting Capacitor & left
side resistor and 2nd one consisting Diode & right side resistor.
1st

Since in RC circuit RC<<T. Output will be like as shown.

34. Ans: (b)

1
Solution:   : n  ND
nqn
1 1
ND  
qn 0.5  1.6  1019  1250

ND  1  1016 / cm3

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 Analog Electronics (Diode Circuits)

35. Ans: (d)

Solution: Applying KVL in given circuit we have
10 -1000 i – v = 0 ….(1)
Since 10 V is greater than 0.7V so current will flow
v  0.7
through diode and is i  …..(2)
500
From (1) and (2) we have
10 – 2(v – 0.7) – v = 0
10 + 1.4 – 3 v = 0
3v = 11.4
11.4
v  3.8 v
3
v  0.7 3.8  0.7
So i   = 6.2 mA
500 500

36. Ans: (d)

Solution: Consider D  OFF and D  ON then
1 2
Applying KVL in the outer most loop:
 
10  I 1000  20  0.3  0
9.7
I
1020
I = 9.5 mA
Now we calculate V
D
1

10  9.5  10  3
 
1  103  V
D
1
V  0.5V
D
1
Since VD  0.7V, D1 is in OFF state i.e. our assumption is correct and hence (d) is correct
1

option.

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 Analog Electronics (Diode Circuits)

37. Ans: (d)

Solution: For case – i V  1.7
i
D  ON and D  OFF
1 2
V  1.7V
0
For case – ii 1.7  V  2.7
1
D  OFF and D  OFF
1 2
V V
0 i
For case –iii 2.7  V
1
D  OFF and D  ON
1 2
V  2.7V
0

38. Ans: 19 to 20
10  2.2
Solution: I   7.8mA
1000
Incremental resistance,
V 2  25  103
r  T 
d I 7.8  103
r  6.41
d
Total incremental resistance  3r  3  6.41  19.23
d

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 Analog Electronics (Diode Circuits)

39. Ans: (b)

Solution: To determine the minimum load resistance that will turn the zener diode on,
simply the value of R that will result in a load voltage V  V . That is
L L z
R V
V V  L i
L z R R
L
RV
R  z  1000  10  250
L
min Vi  Vz 50  10
Voltage across resistor, R  V  V  V  50  10  40V
R i z

V 40
I  R   40mA
R R 1000
The minimum level of I is then determine by,
L
I  I I  40  103  32  10 3  8mA
L R zm
min
V 10
Maximum value of RLmax  z   1.25K
ILmin 8m
 250  R  1.25k
L

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 Analog Electronics (Diode Circuits)

We recommend you to take the Chapter Test first and then check
the Solutions.

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 Analog Electronics (Diode Circuits)

Chapter Test Solutions

1. Ans: (d)
Solution: It is a Positive clipper (clipper: remove some portion of signal)
Diode positive P terminal touch the o/p positive terminal
The circuit is Positive clipper
Suppose diode Negative terminal touch the o/p
The circuit is Negative clipper
From the circuit
Si = Cut-in voltage = 0.6 V
Ge Cut – in voltage = 0.3 V

2. Ans: (c)

Solution: n p 
ni
2


1.5  1010 
2

 10 5 / cm3
pp 2.25  10 15

3. Ans: (a)
Solution: Assume D1 is conducting
V2  6  0.6  5.4V
Hence D2 is not conducting (voltage across D2 is negative 5.4-6=-0.6V)
V1 = 6V.

4. Ans: (c)
Solution: Always the diode with highest anode voltage will be ON
In the circuit D1 –ON only
3  0.7
I  1.15mA
2k
V0  1.15V

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 Analog Electronics (Diode Circuits)

5. Ans: (d)
 5  2
Solution: VX  Vi   V
 7.5  3 i
Apply KCL at VX
I1  I2  I3
Vi  Vx Vx Vx  V0 V  VX 1.5VX  VX  V0
   i 
2.5 5 7.5 2.5 7.5
3Vi  3Vx  2.5VX  V0
2
V0  5.5VX  3Vi V0  V
3 i
To get V0  6V  Vi  9V

6. Ans: (c)
Solution: When V  2V D  off,D ,D ,D all ON
i 1 2 3 4
V  1.8V
0

7. Ans: (b)
Solution: In the circuit shown
D &D  OFF & D  ON
1 3 2
5  0.7  5
I = 0.93 mA
10k

8. Ans: 0
Solution:
15  0.7  V V 0
KCL at node 1, 0 I  0
5K D 10K
2
V 14.3 V0
I  0   _______________(1)
D
2 10K 5K 5K
KCL at node 2
15  V V 0
2 I  2
10K D 5K
2
3V
I  1.5  10 3  2 _________(2)
D 10K
2
V  V  0.7
2 0
Equaling eq (1) & (2)

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 Analog Electronics (Diode Circuits)

V V 3V
0  0  14.3  1.5  103  2
5K 10K 5K 10K
V  6.91V
0
3V
I  0  2.86  10 3  .787  10 3 A.
D 10K
2
The current through diode from anode to cathode is negative that means the diode D is in
2
reverse bias
i 0
D2

9. Ans: (d)
Solution: Vs = 30 – 10 = 20V
Vs2 20 2
Power dissipation= = = 2 Walts
Rs 200

10. Ans: (b)

Solution: For the applied input, Zener and Si diodes are in non–conducting state V  6V
0

11. Ans: (d)

Solution: When V  3.7V & V  6V
i i

Diode is – ON
 V  3.7   Vi  3.7 
V  3.7   i  
0  2   2 
   
When zener ON  V  6V
0
To get V  6V , the required i/p is V  6  2  3.7  8.3V
0 i

12. Ans: (c)

-Eg
Solution: Since n i 2 =NC N V e KT
3
Also N C and N V are temperature dependent. Also NC & NV (directly proportional to) α T 2

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 Analog Electronics (Diode Circuits)

13. Ans: 23 to 24
Solution: V  5.8V
z
For Maximum load current
V V =30V
i max
30  5.8
I I
1k L z
24.2mA  I  I
L Z
I  24.2mA  0.5mA = 23.7 mA
Lmax

14. Ans: (b)

Solution: During positive half cycle, this circuit can be redrawn as,

∴ According to voltage division rule

V0  5sin 0 t this is during positive half cycle.

Similarly during negative half cycle V0  5sin 0 t

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 Analog Electronics (Diode Circuits)

15. Ans: (b)

Solution: The largest positive input signal is passed as V0 .While the remaining inputs signals
are blocked. Suppose that V1 is positive and exceeds V2 and V3 . Then D1 must be forwards
biased with VD and consequently VD < 0 and VD < 0. Hence D 2 and D 3 block, while V1 is
1 2 3
passed as V0 . Similarly for voltage V2 & V3 .

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