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Delta-Depletion Model

The document discusses the total charge on a MOS capacitor using the delta-depletion approximation across different regions: accumulation, depletion, and inversion. It provides equations for charge calculation in each region and details the parameters involved, including threshold voltage and oxide capacitance. The results indicate that the charge profile obtained closely matches analytical results, and a MATLAB code is included for plotting the charge against gate voltage.

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gamerdeep12345
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18 views3 pages

Delta-Depletion Model

The document discusses the total charge on a MOS capacitor using the delta-depletion approximation across different regions: accumulation, depletion, and inversion. It provides equations for charge calculation in each region and details the parameters involved, including threshold voltage and oxide capacitance. The results indicate that the charge profile obtained closely matches analytical results, and a MATLAB code is included for plotting the charge against gate voltage.

Uploaded by

gamerdeep12345
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Total Charge on MOS Capacitor using Delta-Depletion Approximation

THEORY:
The total charge contributed in various region of operation using delta-depletion approximation
is given below,
(a) Accumulation Region – In this region the applied gate voltage, 𝑉 ≤ 0 for p-type
substrate. Thus, a positive charge is accumulated at the oxide-semiconductor interface
which is approximated as 𝑄 = 𝑄 = −𝐶 𝑉 .

(b) Depletion Region − In this region the applied gate voltage, 0 ≤ 𝑉 ≤ 𝑉 for p-type
substrate. Thus, a negative charge is accumulated at the oxide-semiconductor interface

which is approximated as 𝑄 = 𝑄 = 1− 1+ .

(c) Inversion Region − In this region the applied gate voltage, 𝑉 ≥ 𝑉 for p-type substrate.
Thus, a negative charge is accumulated at the oxide-semiconductor interface which is
approximated as 𝑄 = 𝑄 + 𝑄 = 4𝑞𝜖 𝑁 𝜓 + 𝐶 𝑉 − 𝑉

The value of the various parameters are given below,

Threshold voltage, 𝑉 = + 2𝜓

Oxide Capacitance, 𝐶 =

Oxide thickness, 𝑡 = 7 𝑛𝑚
Acceptor doping concentration, 𝑁 = 10 /𝑐𝑚
𝜖 = 11.8𝜖
𝜖 = 3.9𝜖
𝜖 = 8.85 × 10 𝐹/𝑐𝑚
𝑞 = 1.6 × 10 𝐶
𝑁
𝜓 = 𝑉 ln
𝑛
𝑉 = 0.026 𝑉
𝑛 = 1.5 × 10 /𝑐𝑚
RESULT AND CONCLUSION:
The plot of approximated total charge with respect to applied gate voltage is given below,

The charge profile obtained using delta-depletion approximation is close with the results
obtained using analytical method.
CODE:
%%%% ASSIGNMENT 2 : MOSCAP Charge vs. Gate Voltage Profile %%%%%

epsilon_Si = 11.8; % Dielectric constant of Silicon


epsilon_ox = 3.9; % Dielectric constant of Silicon
epsilon_0 = 8.85 * 10^(-14); % Permittivity of free space in F/cm
n_i = 1.5 * 10^10; % Intrinsic carrier concentration per cm^3
N_a = 1 * 10^17; % Acceptor doping concentration per cm^3
q = 1.6 * 10^(-19); % Charge of an electron
V_t = 0.026; % Thermal voltage in volts
t_ox = (2+5) * 10^(-7); % Oxide thickness in cm
h = 0.01; % Voltage step size

%%%% Total Charge ( C / cm^2 ) with delta-depletion approximation %%%%

C_ox = (epsilon_ox*epsilon_0)/t_ox; % Oxide capacitance per unit area in F/cm^2


V_g = -5:h:5; % Gate voltage
psi_f = V_t * log(N_a/n_i); % Fermi potential in V
V_Th = sqrt(4*q*N_a*epsilon_Si*epsilon_0*psi_f)/C_ox + 2 * psi_f; % Threshold
voltage in V
Q_a = -1*(C_ox * V_g(1,1:round((5/h)+1))); % Charge in accumulation region in
C/cm^2
Q_d = abs((q*epsilon_Si*epsilon_0*N_a) * (1-
sqrt(1+(2*C_ox^2*V_g(1,round((5/h)+2):round(((5+V_Th)/h)+1)))/(q*epsilon_Si*epsilo
n_0*N_a)))/C_ox); % Charge in depletion region in C/cm^2
Q_i = C_ox * (V_g(1,round(((5+V_Th)/h)+1):length(V_g))-V_Th) +
sqrt(4*q*N_a*epsilon_Si*epsilon_0*psi_f); % Charge in inversion region in C/cm^2
Q_i(1,1) = Q_d(1,length(Q_d)); % for continuous curve

%%%% Newton-Raphson for determining Surface Potential, psi_s %%%%

psi_s = zeros(1,length(V_g));
for k = 1:length(V_g)
V = V_g(1,k);
if V >= 0
x = 0.01;
else
x = -0.01;
end
for i = 1:1000
g = 2*q*epsilon_Si*epsilon_0*V_t*(N_a*(exp(-x/V_t)-1)+(n_i^2/N_a)*(exp(x/V_t)-
1)+(N_a*x)/V_t);
e = 2*q*epsilon_Si*epsilon_0*(-N_a*exp(-x/V_t)+(n_i^2/N_a)*exp(x/V_t)+N_a);
m = C_ox*(V-x);
f = g-m^2;
f_1 = e - 2*C_ox^2*(x-V);
x = x - (f/f_1);
end
psi_s(1,k) = x;
end

%%%% Total Charge ( C / cm^2 ) without delta-depletion approximation %%%%

Q_s = sqrt(2*q*epsilon_Si*epsilon_0*V_t*(N_a*(exp(-psi_s/V_t)-
1)+(n_i^2/N_a)*(exp(psi_s/V_t)-1)+(N_a*psi_s)/V_t));
Q_s(1,round((5/h)+1)) = 0; % No charge for zero gate voltage

%%%% Plot of Total Charge %%%%


figure;
semilogy(V_g(1,1:round((5/h)+1)),Q_a,'Displayname','Accumulation Region
approximation');
hold on;
semilogy(V_g(1,round((5/h)+2):round(((5+V_Th)/h)+1)),Q_d,'Displayname','Depletion
Region approximation');
semilogy(V_g(1,round(((5+V_Th)/h)+1):length(V_g)),Q_i,'Displayname','Inversion
Region approximation');
semilogy(V_g,Q_s,'Displayname','Total Charge ( without approximation )');
xlabel('Gate Voltage ( V )');
ylabel('Total Charge ( C / cm^2 )');
title('Surface Charge Density vs. Gate Voltage');
legend;
grid on;
hold off;

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