Product Description SNA-200

Stanford Microdevices’ SNA-200 is a GaAs monolithic

broadband amplifier (MMIC) in die form. This amplifier
provides 16dB of gain when biased at 50mA and 4V. DC-6.5 GHz, Cascadable
External DC decoupling capacitors determine low frequency GaAs MMIC Amplifier
response. The use of an external resistor allows for bias
flexibility and stability.

These unconditionally stable amplifiers are designed for use

as general purpose 50 ohm gain blocks. Also available in
packaged form (SNA-276, -286 & -287), its small size
(0.33mm x 0.33mm) and gold metallization make it an ideal
choice for use in hybrid circuits.

The SNA-200 is available in gel paks at 100 devices per

container.
Product Features
• Cascadable 50 Ohm Gain Block
Output Power vs. Frequency • 16dB Gain, +14dBm P1dB
16
• 1.5:1 Input and Output VSWR
15
• Operates From Single Supply

50 Ohm Gain Blocks

dBm 14
• Chip Back Is Ground
13

12
0.5 1 1.5 2 4 6 8 10
Applications
GHz • Narrow and Broadband Linear Amplifiers
• Commercial and Industrial Applications

Electrical Specifications at Ta = 25°° C

P a r a m e te r s : T e s t C o n d itio n s :
S ym bol U n its M in . Ty p . M ax.
Id = 5 0 m A , Z 0 = 5 0 O h m s

f = 0 . 1 - 2 .0 G H z dB 1 5 .0 1 6 .0
G S m a ll S ig n a l P o w e r G a in f = 2 . 0 - 4 .0 G H z dB 1 4 .0 1 5 .0
P
f = 4 . 0 - 6 .5 G H z dB 1 3 .0 1 4 .0

G G a i n F la t n e s s f = 0 . 1 - 4 .0 G H z dB + /1 .0
F

BW 3dB 3 d B B a n d w id t h GHz 6 .5

P O u t p u t P o w e r a t 1 d B C o m p r e s s io n f = 2 .0 G H z dBm 1 4 .0
1dB

NF N o is e F ig u r e f = 2 .0 G H z dB 5 .5 6 .0

VSW R In p u t/O u tp u t f = 0 . 1 - 6 .5 G H z - 1 .5 :1

IP T h ir d O r d e r In te r c e p t P o in t f = 2 .0 G H z dBm 2 7 .0
3

T G r o u p D e la y f = 2 .0 G H z psec 100
D

IS O L R e v e r s e Is o la tio n f = 0 . 1 - 6 .5 G H z dB 20

V D e v ic e V o lta g e V 3 .5 4 .0 4 .5
D

d G /d T D e v i c e G a i n T e m p e r a t u r e C o e ff i c i e n t d B /d e g C - 0 .0 0 1 8

d V /d T D e v ic e V o lta g e Te m p e ra tu r e m V /d e g C - 4 .0
C o e ff i c i e n t
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com

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 SNA-200 DC-6.5 GHz Cascadable MMIC Amplifier
Typical Performance at 25° C (Vds =4.0V, Ids = 50mA)

|S11| vs. Frequency |S21| vs. Frequency

0 14

-5 13

dB -10 dB 12

-15 11

-20 10
0.5 1 1.5 2 4 6 8 10 0.5 1 1.5 2 4 6 8 10

GHz GHz

|S12| vs. Frequency |S22| vs. Frequency

0 0

-5 -5

-10
dB dB -10
-15
-15
-20

-25 -20
0.5 1 1.5 2 4 6 8 10 0.5 1 1.5 2 4 6 8 10

GHz GHz
50 Ohm Gain Blocks

Noise Figure vs. Frequency TOIP vs. Frequency

8 28

7.5
27
7

dB 6.5 dBm 26

6
25
5.5
5 24
0.1 0.5 1 1.5 2 4 6 8 10 0.5 1 1.5 2 4 6 8 10

GHz GHz

Suggested Bonding Arrangement Simplified Schematic of MMIC

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com

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 SNA-200 DC-6.5 GHz Cascadable MMIC Amplifier

Absolute Maximum Ratings Part Number Ordering Information

A b s o lu te Part Number Devices Per Pak
P a r a m ete r
M a xim u m

D e vic e C urre nt 70mA

SNA-200 100

Po w e r D issipa tion 3 2 0m W

R F In p ut Po w er 1 0 0m W

Ju n ction Te m p e ra ture +2 0 0 C

O p e ra tin g Te m p e ra tu re -4 5 C to +8 5 C

Sto ra g e Te m pe ra tu re -6 5 C to +1 5 0 C

Notes:
1. Operation of this device above any one of these
parameters may cause permanent damage.

MTTF vs. Temperature @ Id = 50mA

Die Bottom Junction
MTTF (hrs)
Temperature Temperature

+55C +155C 1000000

+90C +190C 100000

+120C +220C 10000

50 Ohm Gain Blocks

Thermal Resistance (Lead-Junction): 500° C/W Typical Biasing Configuration

Die Attach Wire Bonding

The die attach process mechanically attaches the die to Electrical connections to the die are through wire
the circuit substrate. In addition, it electrically connects bonds. Stanford Microdevices recommends wedge
the ground to the trace on which the die is mounted and bonding or ball bonding to the pads of these devices.
establishes the thermal path by which heat can leave the
die.
Recommended Wedge Bonding Procedure
Assembly Techniques 1. Set the heater block temperature to 260C +/- 10C.
Epoxy die attach is recommended. The top and bottom 2. Use pre-stressed (annealed) gold wire between
metallization is gold. Conductive silver-filled epoxies are 0.0005 to 0.001 inches in diameter.
recommended. This method involves the use of epoxy to 3. Tip bonding pressure should be between 15 and
form a joint between the backside gold of the chip and 20 grams and should not exceed 20 grams. The
the metallized area of the substrate. A 150 C cure for 1 footprint that the wedge leaves on the gold wire
hour is necessary. Recommended epoxy is Ablebond should be between 1.5 and 2.5 wire diameters
84-1LMIT1 from Ablestik. across for a good bond.

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com

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