BHARATHIDASAN ENGINEERING

COLLEGE, NATTRAMPALLI.

FREQUENTLY ASKED QUESTIONS – [FAQ 2025]

IMPORTANT UNIVERSITY QUESTIONS (QUESTION BANK -

PER UNIT WISE)

I –YEAR/ II-SEMESTER

SUB. NAME : MATERIALS SCIENCE

SUB.CODE : PH3251

DEPARTMENT : MECHANICAL ENGINEERING

Unit-I ELECTRICAL AND MAGNETIC PROPERTIES OF MATERIALS

Part-A (2marks)
1 Define conducting materials. (April -24)
2 Define Thermial conductivity. .(April -24)
3 Define drift velocity.
4 Infer drift velocity
5 What is meant by electrical conductivity. .(April -22)
6 Define mobility of electrons & mean free path ( Dec -23)
7 Comment on mean free path of an electron.
8 Define relaxation time. ( May -2023)
9 What do you mean by electron theory of metals?
10 What are free electrons or conduction electrons?
11 State Wiedmann-Franz law.( Nov-22)
12 List the merits of classical free electron theory.(April -22)
13 List the demerits of classical free electron theory. ( May -2023) (April -22)
14 Define density of energy states.
15 What is Fermi-Dirac distribution function?( (April22) .(April -24)
16 Define Fermi level.What is Fermi energy?( April 23)
17 What is Fermi surface.State Pauli’s exclusion principle
18 What are degenerate energy states?Comment on kroning penny model.Define
effective mass of an electron.( April 23)

19 Define a hole. Give its importance

20 Define effective mass of Electron ( Nov 2023) (April -22)

21 Define Tight binding approximation.

Part-B(16 marks)

1 On the basis of free electron theory, derive an expression for electrical and
thermal conductivity. Hence, deduce Wiedmann-Franz law.( May 22
&Dec23)( Nov-22)
2 State and prove Wiedemann -Franz law. List the drawbacks of classical free electron
theory .(April -24)

3 Write Fermi-dirac distribution function. Explain how Fermi function

varies with temperature. Give its significance.( May 23) (April -22)
4 Derive an expression for density of states and calculate the carrier concentration in
metals.
(April -24) (Dec -22)
5 Derive an expression for Fermi level in conductors. Obtain the expression for
carrier concentration in terms of Fermi level.
6 Obtain an expression for the energy of a particle in a 3-D box. ( April 21) (Nov23)
7 Explain the behavior of electrons in a periodic potential. ( Nov 22)
8 Discuss in detail how energy bands are formed in a solid. Based on that
distinguish between metals and insulators.( Nov 23)
9 Write a note on tight binding approximation and concept of hole. ( April 24)

10 Define effective mass of an electron. Derive an expression for it.( April 22)
 Unit-III SEMICONDUCTORS AND TRANSPORT PHYSICS

Part-A(2marks)

1 Mention the properties of semiconductors? Give examples

2 Based on band gap, define a semiconductor.( Dec -2024)
3 Comment on intrinsic and extrinsic semiconductors. .(April -22) .(April -24)
4 Quote the meaning of doping. .(April -22)
5 Mention the types of extrinsic semiconductors.
6 Define an n-type semiconductor.
7 Define a p-type semiconductor.
8 Differentiate between n-type and p-type semiconductor.
9 What is a covalent bond?
10 Mention some properties or characteristics of an intrinsic semiconductor.
11 Identify the two processes in which charge carrier are produced in extrinsic
semiconductors.
12 Recognize donor and acceptor impurities. Give examples. .(Dec -22)
13 Distinguish between intrinsic and extrinsic semiconductor.
14 Indicate the differences between elemental and compound semiconductor.
15 Distinguish between direct and indirect band gap semiconductor( Dec -2024) (A -24)
16 Why do we prefer Si for transistor and GaAs for Laser diodes?
17 Define a compensated semiconductor.
18 Write an expression for carrier concentration of electrons in
conduction band in an intrinsic semiconductor.
19 Recall the expression for carrier concentration of holes in valence band in an
intrinsic semiconductor.
20 Identify the expression for electrical conductivity of an intrinsic semiconductor.
21 Define Fermi level in a semiconductor. Mention its position in intrinsic and extrinsic
semiconductor at 0k.
22 What is meant by hall effect? (April -24)
23 Define hall coefficient.&Define hall voltage. .( Dec -2024)
24 Define Schottky effect ( April 2023) ? (April -24)
25. Define Diffusion current ( Nov 2023)

PART – B (5* 16 =80)

1 Derive an expression for density of electrons in conduction band in an intrinsic

semiconductor.( April 21)
2 Derive an expression for density of holes in valence band in an intrinsic
semiconductor.
3 Derive the expression for number of electrons per unit volume in conduction
band of n-type extrinsic semiconductor.(April 2022)
4 Derive an expression for density of holes in valence band a in a p-type
semiconductor. ( Nov 2023)
5 Describe the variation of the fermi level with temperature and impurity
concentration.
6 Obtain the expression for fermi level in an n-type semiconductor. Explain how the
fermi level varies with temperature and impurity concentration in an n-type
semiconductor.
7 Define Hall Effect. Give its theory and obtain an expression for hall coefficient.
(May2022)
8 Explain Hall Effect. Define hall voltage and hall coefficient. ( April 2023)
9 Derive an expression for charge density in terms of hall voltage and further
explain how mobility of the charge carriers can be evaluated by knowing the
conductivity.
10 Discuss about Hall Effect sensors and their applications. (Dec-2022)
11 Draw the band diagram for an ohmic contact and explain its principle and theory.
12 Discuss the V-I characteristics of ohmic contact and its applications.(Nov -23)
13 Explain the theory and working of a Schottky diode.
14 Discuss the V-I characteristics of a Schottky diode and its application.( Nov22)
15 Describe an experimental set up determine the hall coefficient.
 Unit-IV OPTICAL PROPERTIES OF MATERIALS

Part-A(2marks)
1 Recall optical materials. Infer their classifications. (April 2022) ( Dec- 2023)
2 Comment on transparent materials. Give examples.( April -24)
3 What are translucent materials? List the examples.
4 Infer opaque materials. ( Dec -22)
5 Define bandwidth.
6 Outline radiative transition and non-radiative transitions
7 How scattering is different from reflection?
8 Comment on Rayleigh scattering.
9 How electron-hole are produced in intrinsic semiconductors?
10 Comment on absorption, emission and scattering of light.( April 2021)
11 Differentiate between direct and indirect band gap semiconductors.
12 Compare carrier generation and carrier recombination.
13 List the most important carrier generation-recombination processes.
14 Outline the photon transition process.
15 Define Shockley –read –hall recombination.
16 What are the four sub processes involved in phonon transitions?
17 Define auger recombination.
18 Define a photo diode.
19 Define photoelectric effect.
20 What is meant by photo current? Identify its expression.
21 Give its principle. List the process involved in the action of a solar cell.
22 Define the efficient of a solar cell ( April -24)
23. Writeh the short notes on OLED and mention in its uses. ( April 24)
 1 Examine the role of energy states and band gap in the absorption, emission
and scattering of light in metals and insulators.( Nov 23) ( Dec-22)
2 Outline the theory of generation and recombination of charge carriers. Comment
on photon transition and phonon transition.
3 Outline the theory of generation and recombination of charge carriers.
Comment on auger generation- recombination and impact ionization.
4 Describe the working of photo diode. Outline phot current and its salient features.
5 Discuss the concept of solar cells and its working .Explain its I-V characteristics.
List the applications.( April 2022) (Dec -23)
6 Describe the construction of LED. Illustrate with the energy band diagram the
principle of operation of LED. How the emitted wavelength is related to band
gap. List the applications. (May 2023) ( April -24)
7 Describe the construction and working of OLED. Indicate its merits, de-merits and
applications.( Nov 2023)
8 Comment on the principle of laser diode. Explain its constructions and working
with suitable diagrams illustrating the same. Indicate its merits , de-merits and
applications. ( April -22)
9 Write a note on optical data storage techniques .Outline its salient features.
Indicate the merits, de-merits and applications.( April 2022) ( Dec- 23)
 UNIT – IV NANO ELECTRONIC DEVICES
1 What are nano materials?
2 Mention different forms of nano omaterials. (May -2023)
3 Mention any four important application of nanomaterials.
4 How does size affect band gap and fermi energy in nano materials? Give reason.
5 Define quantum confinement. Give its significance.
6 Define exciton bohr radius. (May -2023)
7 List the types of quantum confinement. (May -2023)
8 State the condition for quantum confinement. ( MAY -2022) ( April 2023)
9 What is meant by a quantum structure?
10 Define quantum well. Give examples. ( Dec- 22)
11 Define quantum wire. Give examples. ( April -21)
12 Define quantum dot. Give examples. ( April -22)
13 What is resonant tunneling? Give its application.( April 2022)
14 Explain in CNOT ( April 22)
15 Define coulomb blockade effect. ( May 2023) (April 2022)
16 What is meant by Spintronics.
17 What is meant by single electron phenomena?
18 Define single electron tunnelling.( Nov 2023)
19 Define Quantum mechanical tunnelling ( Dec- 22)
20 Identify the principle of single electron transistor.
21 Compare SET and DFET (Nov 2023)
22 Define Quantum bits
23 Define Bloch Sphere ( April 24)
 PART – B

1 Distinguish between SET and FET ( April 2022)

2 Discuss the salient features of quantum cellular automat and quantum information
processing. ( MAY -2023)
3 Describe preparation to form carbon Nano tubes and applications. ( May 2022)
4 Discuss the effects of quantum confinement in various quantum structures and
derive expressions for density of states for quantum well, quantum wire and
quantum dot. ( May -2023) ( April 2022)
5 Explain coulomb blockade effect and single electron phenomena
6 Describe the principle and operation of single electron transistor and its salient
features. (April -23)

7. Explain in detail the carbon nanotubes and its properties .Give its application in
various fields.( Dec -2024)
8. Elaborate the principle, construction and working of single electron transistor with
characterstics. ( April 22)
 UNIT –V CRYSTALLOGRAPHY

1.What is a space lattice? (A.U. May 2008, Dec 2009)

2. What is a unit cell? (A.U. May 2011, Jan 2009)
3.What is a primitive cell?
4. Name the crystal structure of the following: (a) Gold (b) Germanium (c) Barium (d)
Zinc
5. Bismuth has a = b = c = 4.74 Å and angles α = β = γ = 60°. What is its crystal structure?
6. What are Bravais lattices?
7. Give the values of number of atoms in unit cell for SC, BCC, FCC
8. Define atomic radius.
9 Obtain the formula for atomic radius 'r' in terms of (e lattice constant 'a' for simple cubic.
10. Arrive an expression for atomic radius in terms of lattice constant for BCC. (A.U. May
2012)
11. Derive an expression for atomic radius in terms of lattice parameter for FCC.
12 .Define packing factor. What is its unit?
13. Calculate packing factor in the case of simple cubic structure
14. Sketch the (101) plane in a cubic system.
15.Give the expression for interplanar spacing for a cubic system interms of lattice
constant and Mil ler indices.
16 .Sketch the (101) plane in a cubic system
 PART – B

1. What are the lattice parameters of an unit cell? Define the terms atomic radius and
packing factor. Calculate all the above for SC, BCC and FCC structures. (April 2021)

2. What is a packing factor? Prove that the packing factor of HCP is 0.74. (Jan 2022)

3. What is packing factor? Obtain packing factors for SC, BCC and FCC structures. (Jan
2024) ( Dec 21)

4. (a) What are Miller Indices? Explain how they are determined with any two planes in
SC structure. Give their significance. (May 2023)

(b) The lattice constant for an unit cell of aluminum is 4.049Å. Calculate the spacing of
(220) plane.

5. (i) Sketch two successive (110) plane.

(ii) Show that for a cubic lattice, the distance between two successive planes (h k l) is
given by d= a/√ (h2+k2+l2). (( April 24)

6. Describe the structure of Diamond and graphite (May2017)

7. Describe Bravais lattices of the seven crystal systems with neat diagrams.

8. Write a note on imperfections in crystals. ( April 2022) ( Dec-23)

 BHARATHIDASAN ENGINEERING COLLEGE
(Approved by AICTE and Affiliated with Anna University, Chennai – 600 025)

Nattrampalli, Tirupattur District – 635 854

Frequently Asked Questions

INDEX

Faculty Name : N .MANIKANDAN

Degree : B.E

Branch : MECHANICAL

Year : 2025- 2026

Semester : SECOND

Sub. Code & Name : PH3251 & MATERIALS SCIENCE

Update FAQ Date : 28.02.2025

Sl. No Part – A Part – B

Units No. of Questions No. of Questions
From To From To
1 Unit - I 1 21 1 10
2 Unit – II 1 25 1 15
3 Unit – III 1 23 1 11
4 Unit – IV 1 23 1 09
5 Unit - V 1 23 1 07

Faculty Sign. HOD Sign. Principal

( Prepared By) ( Verified By )