VSPUC

Vidya Sanskaar Pre-University College

PHYSICS I – PUC
SEMI CONDUCTOR ELECTRONICS
1. What is energy band?
Sol.: The group of closely packed energy levels is called Energy band.

2. Define Valence bond and Conduction band & Energy gap?

Sol.: The Energy band which are completely filled at O Kelvin.
Conduction band – The Energy band above the Valence band.
Energy gap – The Gap between the top of Valence bond and the between of conduction band is called
Energy gap.

3. On the basis of energy band diagram distinguish between conductor, and Semiconductor.
Sol.:
CONDUCTORS SEMICONDUCTORS INSULATORS

Eg = 0

It has low resistivity It has moderate resistivity It has high resistivity

They allow current to pass Their electrical properties They don’t allow current to
through it lies between that of pass through it
conductors and
insulators
conductivity decreases conductivity increases with Their conductivity is zero
with increase in increase in temperature
temperature

Conductivity is due to free Conductivity is due to No electrons or holes for

electrons both electrons and holes conductivity.
Conduction band is Conduction band is Conduction band is
completely filled with partially filled with completely empty
electrons at above 0K electrons above 0K

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4. What is fermi energy?
Sol.: Fermi Energy is defined as the highest occupied energy level of a material at absolute zero
temperature.

5. What is Semi-Conductors? Give an example.

Sol.: The material in which there is a small energy gap [Eg < 3eV] between the valence band and
conduction band are called Semi conductors.
Ex: Germanium, Silicon.

6. Give an example of elemental Semi-Conductor.

Sol.: Si, Ge etc.

7. Which are the three different types of compound Semi-Concoctors, give an example per each.
(i) Inorganic Semiconductors. Ex: CdS, GaAs, CdSe etc.
(ii) Organic Semiconductors. Ex: Anthracene, doped pthalocyanines etc.
(iii) Organic Polymer. Ex: Poly pyrrole, poly thiophene

8. What are intrinsic Semiconductor?

Sol.: A pure semiconductor is called intrinsic semiconductor.

9. What are Extrinsic Semiconductor?

Sol.: An intrinsic semiconductor with a suitable impurity is called extrinsic semiconductors.

10. What is meant by doping?

Sol.: The process of adding impurity to an intrinsic. Semiconductor is called doping.

11. What are dopants?

Sol.: The impurity atoms added are called dopants are doping agents.

12. Name the 2 types of extrinsic semiconductor.

Sol.: n-type and p-type semiconductor.

13. Distinguish between intrinsic semiconductor and extrinsic semiconductor.

Intrinsic semiconductor Extrinsic semiconductor
* It is the semiconductor in the pure form * It is the pure semiconductor doped with suitable
impurity.
* Electron and holes are equal in number * Electrons and holes are unequal in number.
* Conductivity can be increased with * Conductivity can be increased with temperature &
temperature dopants.
The net charge in p or n type is Zero.

14. Discuss the formation of n-type semiconductor.

Sol.: n type semiconductor is obtained by doping an internsic semiconductor with a pentavalent impurity
like P, As, Sb, Bi, etc. [SbBiPAs]

When Phosphorous is added to pure Ge, H of the 5 valence electrons of phosphorous forms covalent bond
with H Ge atoms. The 5th electron is loosely bound to the parent atom and it can be removed easily. The
release of 5th electron doesn’t create a hole in the crystal structure. Thus each impurity atom donates an
electron and are called donor impurity.

At higher temperature some of the covalent bond breaks releasing electrons and creating equal no. of holes.
Thus the no. of conduction electrons, ne is much greater than the no. of holes 𝑛ℎ i.e. 𝑛𝑒 > > 𝑛ℎ
Diagram

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15. Discuss the formation of p-type of semiconductor.

Sol.: p type semiconductor is obtained by doping on intrinsic semiconductor with a trivalent impurity like
Al(Aluminium), B(Born), Ga(Gallium), In(Indium) etc. (AlBInGa)

Diagram

When Al is added to pure Ge the 3 valence electrons of all form covalent bond with 3 neighbouring Ge
atoms. The presence of 4th Ge atom creates a hole in the crystal structure which seeks an opportunity to
capture an electron form neighbouring Ge atom. Thus each impurity atom creates a hole in the crystal
structure which can accept an electron hence impurity atom is also called acceptor impurity.

At higher temperature some of the covalent bonds break releasing electron an creating equal no. of holes.
There the no. of holes [𝑛ℎ ] is much greater than the conduction electrons [𝑛𝑒 ] i.e. 𝑛ℎ > > 𝑛𝑒 .
The holes which are more in no. are called majority change carriers.

16. Doping silicon with indium/Boron/Aluminium leads to which type of Semiconductor?

Sol.: p-type Semi Conductor.

17. Distinguish between p-type and n-type semiconductor.

p-type Semiconductor n-type Semiconductor
* It is the formed by doping pure Ge with a Keri * It is formed by doping pure Ge with a pentavalent
valent impurity. impurity.
* Majority change carriers are holes. * Majority charge carriers are electrons.
* Minority change carriers and electrons * Minority charges carriers are holes.
* Mobility of majority charge are less. * Mobility of majority charge is high.
* Acceptors impurity * Donor impurity.
* Energy level of trivalent impurity is just above * Energy level of pentavalent impurity is just below
valence bond. conduction bond.

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18. Discuss the formation of p-n junction and hence explain the terms depletion region and barriers
potential difference.

Sol.: The junction between p-type and n-type semiconductor such that crystal structure remain continuous
across the boundary.
The diffusion of electron from n region to p region creates a position ion on n side. Similarly diffusion of
hole from p region to n region creates a negative ion on p side of junction. Thus a layer of positive charge is
created on n side and a layer of negative charge is created on p side of the junction. This layer of in mobile
charge carriers formed across the junction is called depletion region about few micron.

The collection of opposite kind of charges across the junction creates a strong electric field. Due to electric
field electrons on p side move to n side.
The motion of these minority change carriers due to electric field is called Drift.

The collection of opposite kind of changes across the junction creates a potential difference across the
junction and is called barrier potential. The barrier potential prevents the further movement change
carriers.

19. What is the diffusion current in p-n junction diode? (2M)

Sol.: In an unbiased junction, current due to the diffusion of majority charge carriers across the junction is
called diffusion current.

20. What is ‘drift current’ in a p-n junction diode? (2M)

Sol.: The motion of charge carriers due to the electric field is called drift current.

21. What is barrier potential in a semiconductor diode?

Sol.: The potential developed across the junction due to the diffusion of charge carriers is called barrier
potential.

22. Give the circuit symbol of a p-n junction diode. Mention the significance of arrow in it?
Sol.: The arrow pointing from p side to n side represents the direction of conventional current.

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23. When p-n junction is said to be unbiased?
Sol.: A p -n junction is said to be unbiased when no external potential is applied across the junction.

24. When p-n junction is said to be forward bias? and explain the working of pn junction in forward
bias.
Sol.: The diode is said to be forward biased when p –side is connected to +ve terminal and n – side is connected to –
ve terminal of the battery

During forward bias

• The width of depletion region decreases and
• Junction potential decreases
• The charge carriers cross the junction and electric current flows
through the circuit.
• Forward bias offers negligibly small resistance and hence the
diode conducts.
• Current is due to majority charge carriers.

25. When pn junction is said to be reverse bias and explain the working of pn junction in reverse bias.
Sol.: A pn junction is said to be reverse bias, when p region is connected – ve terminal and n region
connected to +ve terminal of the external battery.
Diagram

During reverse bias

• The width of depletion region increases
• Junction potential increases
• Reverse bias offers high resistance
• Current is due to minority charge carriers
• This reverse bias offers very high resistance.

26. Define the term cut in voltage, Breakdown voltage, Reverse Saturation current, Dark current. (2m)
Sol.: Cut in voltage: The width of the depletion region reduces to zero at a particular applied forward
voltage and is known as cut in voltage / threshold voltage for Germanium diode to 0.2V and Silicon diode
0.7 V.

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Breakdown voltage: When reverse voltage is increased a point is reached where the junction breaks down
and reverse current increases sharply. this critical voltage is called breakdown voltage.

Reverse Saturation Current: When the diode is in reverse bias, the reverse bias voltage produces a small
current [10−6A] which is almost remains constant with bias voltage. This small current is called as Reverse
saturation current. .

27. Mention the application of p-n junction.

Sol.: pn junction is used in the construction of Rectifier.

28. What is I-V characteristics of p-n junction diode.

Sol.: A graph showing the variation of current through a pn junction with applied voltage.

29. Draw the I.V characteristics of pn junction diode hence discuss the resistance of the junction in
forward bias.
Diagram

In forward bias the voltage across the diode increased in small step the corresponding current is measured
the graph of voltage v/s current is drawn it is observed that initially the current increased slowly but beyond
the cutin voltage current increases sharply and graph becomes almost linear. The forward bias resistance of
the diode is slow.

∆V
The resistance of the diode is calculated as R = +
∆𝐼

Draw I.V. characteristics of pn junction diode in reverse bias and explain.

Diagram

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The circuit connection is as shown in the diagram. The voltage across the diode V is increased gradually in
suitable small step. The corresponding value of the current is measured in μA.
Initially current in the circuit is small and almost remains constant.
But at a certain voltage called breakdown voltage the current increases sharply.
The variation of current with applied voltage is shown in the graph.

The reciprocal of the slope of the graph represents the value of the resistance in reverse bias.

30. What is the resistance of ideal diode when

Sol.: (a) forward bias (b) Reverse bias
(a) forward bias: zero resistance
(b) Reverse bias: infinite resistance.

31. Which property of the diode is used in the principle of rectification.

Sol.: Unidirectional conduction property of the diode

32. What is Rectification.

Sol.: The process of converting AC into DC.

33. Mention the types of Rectifiers.

Sol.: (i) Half wave Rectifier (ii) Full wave Rectifier

34. What is half wave Rectifier. Describe with circuit diagram.

Diagram

* A device which converts only half cycle of AC into DC is called half wave Rectifier. The AC voltage to be
Rectified if applied a cross the primary of the transformer P.

* The diode d is connected in series with load resistance 𝑅𝐿 and this series combination is connected to the
secondary of the transformers.

* During the +ve half cycle of the AC input, A is +ve with respect to B the diode d is in forward bias and
hence it conducts the current.
* During the – ve half cycle of AC input, A is – ve with respect to B. The diode d is in reverse bias. Hence it
does not conducts the current.

* The diode conducts the current only in +ve half cycle of AC. Hence it acts as half wave Rectifier.

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35. What is full wave Rectifier and explain the construction and working of semiconductor diode in
Reverse bias.

A device which converts AC to DC is called a rectifier and the process is called rectification.
Full wave rectifier is a device which converts both the half cycles of ac into dc.

Diagram

.
During the positive half cycle of input AC voltage, the diode D1 is forward biased so D1
conducts. The diode D2 is in reverse biased and D2 does not conduct. As a result the current
I flows through RL and produces output across the RL.
During the negative half cycle of input AC voltage, the diode D 1 is reverse biased so
D1 does not conducts. The diode D2 is in forward biased and hence D2 conducts. As a result
the current I flows through RL and produces output across the RL.

36. If the out of a full wave Rectifier gives steady direct current
Sol.: No, it always gives the pulsating direct current.

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