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Ii-I Ac Lab Manual

The document is a laboratory manual for the Analog Circuits Lab at Malla Reddy College of Engineering and Technology for the academic year 2024-25. It outlines the course objectives, program educational objectives, and program outcomes for students in the Electronics and Communication Engineering department. Additionally, it includes a code of conduct for laboratory sessions, a list of experiments, and detailed procedures for conducting specific experiments on transistor characteristics.

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0% found this document useful (0 votes)
18 views123 pages

Ii-I Ac Lab Manual

The document is a laboratory manual for the Analog Circuits Lab at Malla Reddy College of Engineering and Technology for the academic year 2024-25. It outlines the course objectives, program educational objectives, and program outcomes for students in the Electronics and Communication Engineering department. Additionally, it includes a code of conduct for laboratory sessions, a list of experiments, and detailed procedures for conducting specific experiments on transistor characteristics.

Uploaded by

Sriram
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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DEPARTMENT OF ECE ANALOG AND CIRCUITS LAB

ANALOG CIRCUITS
LABORATORY MANUAL
(R22A0481)
(II YEAR–I SEM)
(2024-25)

Designed BY

K. VIJAYA BHARATHI
ASSISTANT PROFESSOR

Department of Electronics and Communication Engineering

MALLA REDDY COLLEGEOF ENGINEERING& TECHNOLOGY


(Autonomous Institution –UGC, Govt. of India)
Recognized under 2(f)and12 (B)ofUGCACT1956
Affiliated to JNTUH, Hyderabad, Approved by AICTE - Accredited by NBA & NAAC – ‘A’ Grade -
ISO 9001:2015 Certified) Maisammaguda ,Dhulapally (Post Via. Kompally), Secunderabad–
500100, Telangana ,India

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DEPARTMENT OF ECE ANALOG AND CIRCUITS LAB

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DEPARTMENT OF ECE ANALOG AND CIRCUITS LAB
INDEX

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DEPARTMENT OF ECE ANALOG AND CIRCUITS LAB

DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING


VISION

MISSION

QUALITY POLICY

PROGRAMME EDUCATIONAL OBJECTIVES

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DEPARTMENT OF ECE ANALOG AND CIRCUITS LAB

PEO1: PROFESSIONALISM & CITIZENSHIP


To create and sustain a community of learning in which students acquire knowledge and
learn to apply it professionally with due consideration for ethical, ecological and
economic issues.

PEO2: TECHNICAL ACCOMPLISHMENTS


To provide knowledge based services to satisfy the needs of society andthe industry by
providing hands on experience in various technologies in core field.

PEO3: INVENTION, INNOVATION AND CREATIVITY


To make the students to design, experiment, analyze, interpret in the core field with the
help of other multi disciplinary concepts wherever applicable.

PEO4: PROFESSIONAL DEVELOPMENT


To educate the students to disseminate research findings with goodsoft skills and
become a successful entrepreneur.

PEO5: HUMAN RESOURCE DEVELOPMENT


To graduate the students in building national capabilities in technology,education and
research.

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DEPARTMENT OF ECE ANALOG AND CIRCUITS LAB

PROGRAM OUTCOMES (POs)


Engineering Graduates should possess the following

1. Engineering knowledge: Apply the knowledge of mathematics, science, engineering


fundamentals, and an engineering specialization to the solution of complex engineering
problems.

2. Problem analysis: Identify, formulate, review research literature, and analyze complex
engineering problems reaching substantiated conclusions using first principles of
mathematics, natural sciences, and engineering sciences.

3. Design / development of solutions: Design solutions for complex engineering


problems and design system components or processes that meet the specified needs with
appropriateconsideration for the public health and safety, and the cultural, societal, and
environmentalconsiderations.

4. Conduct investigations of complex problems: Use research-based knowledge and


research methods including design of experiments, analysis and interpretation of data,
andsynthesis of the information to provide valid conclusions.

5. Modern tool usage: Create, select, and apply appropriate techniques, resources, and
modern engineering and IT tools including prediction and modeling to complex
engineering activities with an understanding of the limitations.

6. The engineer and society: Apply reasoning informed by the contextual knowledge to
assess societal, health, safety, legal and cultural issues and the consequent
responsibilitiesrelevant to the professional engineering practice.

7. Environment and sustainability: Understand the impact of the professional


engineering solutions in societal and environmental contexts, and demonstrate the
knowledge of, and need for sustainable development.

8. Ethics: Apply ethical principles and commit to professional ethics and responsibilities
andnorms of the engineering practice.

9. Individual and team work: Function effectively as an individual, and as a member or


leader in diverse teams, and in multidisciplinary settings.

10. Communication: Communicate effectively on complex engineering activities with the

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DEPARTMENT OF ECE ANALOG AND CIRCUITS LAB
engineering community and with society at large, such as, being able to comprehend
and write effective reports and design documentation, make effective presentations,
and give and receive clear instructions.

11. Project management and finance: Demonstrate knowledge and understanding of the
engineering and management principles and apply these to one’s own work, as a
member and leader in a team, to manage projects and in multi-disciplinary
environments.

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DEPARTMENT OF ECE ANALOG AND CIRCUITS LAB
CODE OF CONDUCT FOR THE LABORATORIES

1. All students must observe the Dress Code while in the laboratory.
2. Sandals or open-toed shoes are NOT allowed.
3. Foods, drinks and smoking are NOT allowed.
4. All bags must be left at the indicated place.
5. The lab timetable must be strictly followed.
6. Be punctual for your laboratory session.
7. Program must be executed within the given time.
8. Noise must be kept to a minimum.
9. Workspace must be kept clean and tidy at all time.
10. Handle the systems and interfacing kits with care.
11. All students are liable for any damage to the accessories due to their own negligence.
12. All interfacing kits connecting cables must be RETURNED if you taken from the lab supervisor.
13. Students are strictly PROHIBITED from taking out any items from the laboratory.
14. Students are NOT allowed to work alone in the laboratory without the Lab Supervisor
15. USB Ports have been disabled if you want to use USB drive consult lab supervisor.
16. Report immediately to the Lab Supervisor if any malfunction of the accessories, is there.

Before leaving the lab


1. Place the chairs properly.
2. Turn off the system properly
3. Turn off the monitor.
4. Please check the laboratory notice board regularly for updates.

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DEPARTMENT OF ECE ANALOG AND CIRCUITS LAB

CERTIFICATE

MALLA REDDY COLLEGE OF ENGINEERING AND TECHNOLOGY


(Autonomous Institution – UGC, Govt. of India)
(Affiliated to JNTUH, Hyderabad, Approved by AICTE- Accredited by NBA & NAAC ‘A’
Grade –
ISO 9001:2015 Certified)

Certificate

Department of Electronics and Communication Engineering certified that in the


bonafide Record of the work done by Mr./Miss
Reg.No of B.Tech ECE year semester
for the Academic year 20 to 20 in Laboratory.

Date: Staff In charge HOD

Internal Examiner External Examiner

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DEPARTMENT OF ECE ANALOG AND CIRCUITS LAB

INDEX

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DEPARTMENT OF ECE ANALOG AND CIRCUITS LAB
(R22A0481) ANALOG CIRCUITS LAB

COURSE OBJECTIVES:
1) To design Multistage, Power amplifiers and multivibrators according to given specifications.
2) To analyze various amplifiers such as Common Emitter, Common Source, Cascade and Cascode
amplifiers.
3) To build circuit construction skills using circuit simulation software tool.
4) To simulate different amplifier circuits.
5) To design Feedback amplifiers
LIST OF EXPERIMENTS

1. INPUT & OUTPUT CHARACTERISTICS OF TRANSISTOR CBCONFIGURATION


2. INPUT & OUTPUT CHARACTERISTICS OF TRANSISTOR CE CONFIGURATION
3. CALCULATION OF h –PARAMETERS of CC CONFIGURATION FROM INPUT & OUTPUT
CHARACTERISTICS
4. CALCULATION OF h –PARAMETERS of CB CONFIGURATION FROM INPUT & OUTPUT
CHARACTERISTICS
5. CALCULATION OF h –PARAMETERS of CE CONFIGURATION FROM INPUT & OUTPUT
CHARACTERISTICS
6.FREQUENCY RESPONSE OF CE AMPLIFIER
7.FREQUENCY RESPONSE OF CS AMPLIFIER
8. FREQUENCY RESPONSE OF TWO STAGE RC COUPLED AMPLIFIER
9. VOLTAGE SERIES FEEDBACK AMPLIFIERS
10 CURRENT SHUNT FEEDBACK AMPLIFIERS
11 COLIPTSOSCILLATOR
12 HARTLEY OSCILLATOR

COURSE OUTCOMES :
1) Design Multistage, Power amplifiers and multivibrators according to given specifications.
2) Analyze various amplifiers such as Common Emitter, Common Source, Cascade and
Cascode amplifiers.
3) Build circuit construction skills using circuit simulation software tool.
4) Simulate different amplifier circuits.
5) Design Feedback amplifiers

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DEPARTMENT OF ECE ANALOG AND CIRCUITS LAB
LIST OF EXPERIMENTS

1. INPUT & OUTPUT CHARACTERISTICS OF TRANSISTOR CBCONFIGURATION

2. INPUT & OUTPUT CHARACTERISTICS OF TRANSISTOR CE CONFIGURATION

3. CALCULATION OF h –PARAMETERS of CC CONFIGURATION FROM INPUT & OUTPUT

CHARACTERISTICS

4. CALCULATION OF h –PARAMETERS of CB CONFIGURATION FROM INPUT & OUTPUT


CHARACTERISTICS
5. CALCULATION OF h –PARAMETERS of CE CONFIGURATION FROM INPUT & OUTPUT

CHARACTERISTICS

6. FREQUENCY RESPONSE OF CE AMPLIFIER

7. FREQUENCY RESPONSE OF CS AMPLIFIER

8. F REQUENCY RESPONSE OF TWO STAGE RC COUPLED AMPLIFIER

9. VOLTAGE SERIES FEEDBACK AMPLIFIERS

10. CURRENT SHUNT FEEDBACK AMPLIFIERS

11. COLIPTSOSCILLATOR

12. HARTLEY OSCILLATOR

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EXPERIMENT 1

1. COMMON BASE INPUT & OUTPUT CHARACTERISTICS


AIM: 1.To observes and draw the input and output characteristics of a transistor
Connected in Common Base configuration.
2. To find α of the given transistor and also its input and output Resistances.
APPARATUS:
Transistor, BC107 -1No.
Regulated power supply (0-30V) -1No.
Voltmeter (0-20V) - 2No.
Ammeters (0-10mA) - 2No.
Resistor, 1KΩ - 2No
Bread board
Connecting wires

THEORY:
A transistor is a three terminal active device. The terminals are emitter, base,
collector. In CB configuration, the base is common to both input (emitter) and
output (collector). For normal operation, the E-B junction is forward biased and C-
B junction is reverse biased. In CB configuration, IE is +ve, IC is –ve and IB is –ve.
VEB = F1 (VCB, IE) and
IC = F2 (VEB,IB)
With an increasing the reverse collector voltage, the space-charge width at the
output junction increases and the effective base width ‘W’ decreases. This
phenomenon is known as “Early effect”. Then, there will be less chance for
recombination within the base region.With increase of charge gradient with in the
base region, the current of minority carriers injected across the emitter junction
increases.
The current amplification factor of CB configuration is given by,
α = ∆IC/ ∆IE
Input Resistance, ri= ∆VBE /∆IE at Constant VCB
Output Résistance, ro = ∆VCB /∆IC at Constant IE

CIRCUIT DIAGRAM:

MODEL GRAPHS:
A) INPUT CHARACTERISTICS
B) OUTPUTCHARACTERISTICS

OBSERVATIONS:

A) INPUT CHARACTERISTICS:

VCB=1V VCB= = 2V VCB= 4V


VEE(V)
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
B) OUTPUT CHARACTERISTICS:

IE=10mA IE=20mA IE=30mA


Vcc(V) VCB(V) IC(mA) VCB(V) IC(mA) VCB(V) IC(mA)

Operation: The positive going Pulse of input Source increases the emitter voltage.
As the base voltage is Constant, the forward bias of emitter base junction reduces.
This reduces IB, reducing IC and hence the drop across RC since VO=VCC - IC RC,
the reduction in IC results in an increase in VO. Therefore, we can Say that positive
going input produces positive going
PROCEDURE:
A) INPUT CHARACTERISTICS:
1. Connections are made as per the circuit diagram.
2. For plotting the input characteristics, the output voltage VCE is kept constant at
0V and for different values of VEE note down the values of IE and VBE
3. Repeat the above step keeping VCB at 2V,4V,and 6V and all the readings are
tabulated.
4. A graph is drawn between VEB and IE for constant VCB.
B) OUTPUT CHARACTERISTICS:
1. Connections are made as per the circuit diagram.
2. For plotting the output characteristics, the input IE is kept constant at 0.5mA and
for different values of VCC, note down the values of IC and VCB.
3. Repeat the above step for the values of IE at 1mA, 5mA and all the readings are
tabulated.
4. A graph is drawn between VCB and Ic for constant IE
PRECAUTIONS:
1. The supply voltages should not exceed the rating of the transistor.
2. Meters should be connected properly according to their polarities.
3. While performing the experiment do not exceed the ratings of the transistor.
This may lead to damage the transistor.
4. Connect voltmeter and ammeter in correct polarities as shown in the circuit
diagram.
5. Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram.
6. Make sure while selecting the emitter, base and collector terminals of the
transistor.
RESULT:

VIVA QUESTIONS:

1. What is the range of α for the transistor?


2. Draw the input and output characteristics of the transistor in CB configuration?
3. Identify various regions in output characteristics?
4. What is the relation between α and β?
5. What are the applications of CB configuration?
6. What are the input and output impedances of CB configuration?
7. Define α (alpha)?
8. What is early effect?
9. Draw Circuit diagram of CB configuration for PNP transistor?
EXPERIMENT 1
1. INPUT & OUTPUT CHARACTERISTICS OF TRANSISTOR CE
CONFIGURATION

AIM:

1. To draw the input and output characteristics of transistor connected in


CE configuration
2. To find β of the given transistor and also its input and output Resistances

APPARATUS:
1. Transistor, BC107 -1No.
2. Regulated power supply (0-30V) -1No.
3. Voltmeter (0-20V) - 2No.
4. Ammeters (0-20mA) -1No.
5. Ammeters (0-200μA) -1No.
6. Resistor, 100Ω -1No
7. Resistor, 1KΩ -1No.
8. Bread board
9. Connecting wires

THEORY:

In common emitter configuration, input voltage is applied between base and


emitter terminals and output is taken across the collector and emitter terminals.
Therefore the emitter terminal is common to both input and output. The input
characteristics resemble that of a forward biased diode curve. This is expected
since the Base-Emitter junction of the transistor is forward biased. As
compared to CB arrangement IB increases less rapidly with VBE. Therefore input
resistance of CE circuit is higher than that of CB circuit.The output
characteristics are drawn between Ic and VCE at constant IB the collector current
varies with VCE up to few volts only. After this the collector current becomes
almost constant, and independent of VCE. The value of VCE up to which the
collector current changes with V CE is known as Knee voltage. The transistor
always operated in the region above Knee voltage, IC is always constant and is
approximately equal to IB. The current amplification factor of CE configuration
is given by

β = ΔIC/ΔIB
Input Resistance, ri = ∆VBE /∆IB (μA) at Constant VCE
Output Résistance, ro = ∆VCE /∆IC at Constant IB (μA)

CIRCUIT DIAGRAM:

MODEL GRAPHS:

A) INPUT CHARACTERISTICS:
A) OUTPUT CHARACTERSITICS:

OBSERVATIONS:
A) INPUT CHARACTERISTICS:
VCE = 1V VCE = 2V VCE = 4V
VBB
VBE(V) IB(μA) VBE(V) IB(μA) VBE(V) IB(μA)
B) OUTPUT CHARACTERISTICS:
IB = 50 μA IB = 75 μA IB = 100 μA
S.NO
VCE(V) IC(mA) VCE(V) IC(mA) VCE(V) IC(mA)

PROCEDURE:

A) INPUT CHARECTERSTICS:

1. Connect the circuit as per the circuit diagram.


2. For plotting the input characteristics the output voltage VCE is kept constant
at 1V and for different values of VBB , note down the values of IB and VBE
3. Repeat the above step by keeping VCE at 2V and 4V and tabulate all the
readings.
4. plot the graph between VBE and IB for constant VCE

B) OUTPUT CHARACTERSTICS:

1. Connect the circuit as per the circuit diagram


2. for plotting the output characteristics the input current IB is kept constant at
50μA and for different values of VCC note down the values of IC and VCE
3. Repeat the above step by keeping IB at 75 μA and 100 μA and tabulate the all
the readings
4. plot the graph between VCE and IC for constant IB
PRECAUTIONS:
1. The supply voltage should not exceed the rating of the transistor
2. Meters should be connected properly according to their polarities
3. While performing the experiment do not exceed the ratings of the transistor.
This may lead to damage the transistor.
4. Connect voltmeter and ammeter in correct polarities as shown in the circuit
diagram.
5. Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram.
6. Make sure while selecting the emitter, base and collector terminals of the
transistor.

RESULT:

VIVA QUESTIONS:

1. What is the range of β for the transistor?


2. What are the input and output impedances of CE configuration?
3. Identify various regions in the output characteristics?
4. What is the relation between α and β?
5. Define current gain in CE configuration?
6. Why CE configuration is preferred for amplification?
7. What is the phase relation between input and output?
8. Draw diagram of CE configuration for PNP transistor?
9. What is the power gain of CE configuration?
10. What are the applications of CE configuration?
EXPERIMENT 3

h-PARAMETERS OF CC CONFIGURATION
AIM: To draw the input and output characteristics of transistor connected in
CC (Common Collector) or Emitter follower configuration.

APPARATUS:
1. Transistor (SL100 or BC107)
2. R.P.S (O-30V) 2Nos
3. Voltmeters (0-20V) 2Nos
4. Ammeters (0-200μA),(0-200mA)
5. Resistors 100Kohm
6. Bread board and connecting wires
7.
THEORY:
A transistor is a three terminal device. Bipolar Junction Transistor (BJT) is a
three terminal (emitter, base, collector) semiconductor device. There are two
types of BJTs, namely NPN and PNP. It consists of two PN junctions, namely
emitter junction and collector junction The terminals are emitter, base,
collector. In emitter follower configuration, input voltage is applied between
base and ground terminals and out put is taken across the emitter and collector
terminals. The input characteristics resemble that of a forward biased diode
curve. This is expected since the Base-Emitter junction of the transistor is
forward biased. The output characteristics are drawn between IE and VCE at
constant IB. the emitter current varies with VCE unto few volts only. After this
the emitter current becomes almost constant, and independent of VCE. The
value of VCE up to which the collector current changes with V CE is known as
Knee voltage. The transistor always operated in the region above Knee voltage,
IE is always constant and is approximately equal to IB.
Circuit Diagram:

Procedure:
Input Characteristics:
1. Connect the circuit as per the circuit diagram.
2. For plotting the input characteristics the output voltage VCE is kept
constant at 2V and note down values of VCB for each value of IB
3. Change VCE to 10 V and repeat the above step.
4. Disconnect the voltmeter from input circuit.
5. Plot the graph between VCB and IB for constant VCE
Output Characteristics:
1. Connect the circuit as per the circuit diagram
2. With IB set at 0μA, vary VCE and note down the corresponding IE
value
3. Set IB at 40μA, 80μA and repeat the above step.
4. Plot the output characteristics between VCE and IE for constant IB.
Observations:
Input Characteristics:

S.No VCE = 2V VCE = 4V VCE = 10V


VCB(V) IB(µA) VCB(V) IB(µA) VCB(V) IB(µA)

Output Characteristics:
S.No Ib=500 μA Ib=400 μA Ib=300 μA
VCE(V) IE(µA) VCE(V) IE(µA) VCB(V) IB(µA)
Model Graphs:
Input Characteristics:

Output Characteristics:
Calculations from Graph:
The h-parameters are to be calculated from the following formulae:
1. Input Characteristics: To obtain input resistance, find VCB and IB
for a constant VCB on one of the input characteristics.
Input impedance = hic = Ri = VCB / IB (VCE = constant)
Reverse voltage gain = hrc = VCB / VCE (IB = constant)
2. Output Characteristics: To obtain output resistance, find IE and
VCE at a constant IE.
Output admitance = hoc = 1/Ro = IE / VCE (IB = constant)
Forward current gain = hfc = IE / IB (VCE = constant)
PRECAUTIONS:
1. The supply voltage should not exceed the rating of the transistor
2. Meters should be connected properly according to their polarities
The h-parameters for a transistor in CC configuration are:
a. The Input resistance (hic) __________________ MOhms.
b. The Reverse Voltage Transfer Ratio (hrc) __________________.
c. The Output Admittance (hoc) __________________ Ohms.
d. The Forward Current gain (hfc) __________________.
e.
RESULT:

Viva Questions:
1. What are the input and output impedances of CC configuration?
2. Identify various regions in the output characteristics?
3. Why CC configuration is preferred for buffering?
4. What is the phase relation between input and output?
5. Draw diagram of CC configuration for PNP transistor?
6. What are the applications of CC configuration?
EXPERIMENT 4

h- PARAMETERS CALCULATION OF CB CONFIGURATION


AIM: To calculate the h-parameters of transistor in CB configuration.

APPARATUS:

S.No. Name Quantity


1 Transistor BC 107 1(One) No.
2 Resistors (1K ) 2(Two) No.
3 Bread board 1(One) No.

Equipment:

S.No. Name Quantity


Dual DC Regulated Power supply (0 –
1 1(One) No.
30 V)
2(Two)
2 Digital Ammeters ( 0 – 200 mA)
No.
2(Two)
3 Digital Voltmeter (0-20V)
No.
4 Connecting wires (Single Strand) 2

THEORY

The basic circuit diagram for studying input characteristics is shown in the
circuit diagram. The input is applied between emitter and base, the output is
taken between collector and base. Here base of the transistor is common to
both input and output and hence the name is Common Base Configuration.
Input characteristics are obtained between the input current and input voltage
at constant output voltage. It is plotted between VEE and IE at constant VCB in
CB configuration.
Output characteristics are obtained between the output voltage and output
current at constant input current. It is plotted between VCB and IC at
constant IE in CB configuration.
Circuit Diagram

h – Parameter model of CB transistor:


Procedure:

Input Characteristics:

1. Connect the circuit as shown in the circuit diagram.


2. Keep output voltage VCB = 0V by varying VCC.
3. Varying VEE gradually, note down emitter current IE and emitter-base
voltage (VEE).
4. Step size is not fixed because of nonlinear curve. Initially vary VEE in
steps of 0.1 V. Once the current starts increasing vary VEE in steps of
1V up to 12V.
5. Repeat above procedure (step 3) for VCB = 4V.

Output Characteristics:

1. Connect the circuit as shown in the circuit diagram.


2. Keep emitter current IE = 5mA by varying VEE.
3. Varying VCC gradually in steps of 1V up to 12V and note down
collector current IC and collector-base voltage e(VCB).
4. Repeat above procedure (step 3) for IE = 10mA.

Repeat above procedure (step 3) for IE = 10mA.

PRECAUTIONS:
1. While performing the experiment do not exceed the ratings of the
transistor. This may lead to damage the transistor
2. .Connect voltmeter and ammeter in correct polarities as shown in the
circuit diagram
3. The supply voltage should not exceed the rating of transistor
4. .Do not switch ON the power supply unless you have checked the
circuit connections as per the circuit diagram.
5. Make sure while selecting the emitter, base and collector terminals of
the transistor.
6. Take readings without any parallex error
Observations:

Input Characteristics
VCB = 0V VCB = 4V
VEE (Volts)
VEB (Volts) IE (mA) VEB (Volts) IE (mA)
Output Characteristics
IE = 0mA IE = 5V IE = 10mA
VCC (Volts)
VCB (Volts) IC (mA) VCB (Volts) IC (mA) VCB (Volts) IC (mA)

Graph:
1. Plot the input characteristics for different values of VCB by taking VEE
on X-axis and IE on Y-axis taking VCB as constant parameter.
2. Plot the output characteristics by taking VCB on X-axis and taking IC on
Y-axis taking IE as a constant parameter.

Calculations from Graph:

The h-parameters are to be calculated from the following formulae:

1. Input Characteristics: To obtain input resistance, find VEE and IE


for a constant VCB on one of the input characteristics.

Input impedance = hib = Ri = VEE / IE (VCB = constant)

Reverse voltage gain = hrb = VEB / VCB (IE = constant)

2. Output Characteristics: To obtain output resistance, find IC and


VCB at a constant IE.

Output admitance = hob = 1/Ro = IC / VCB (IE = constant)

Forward current gain = hfb = IC / IE (VCB = constant)

The h-parameters for a transistor in CB configuration are:

a. The Input resistance (hib) Ohms.


b. The Reverse Voltage Transfer Ratio (hrb) .
c. The Output Admittance (hob) Mhos.
d. The Forward Current gain (hfb)
Result:

Discussion/Viva Questions:

1. What is transistor?

2. Write the relation between and ?

3. Define (alpha)? What is the range of ?

4. Why is less than unity?

5. Input and output impedance equations for CB configuration?

6. What is carrier lifetime?

7. What is the importance of Fermi level?

8. Can the junction less transistors be realized?

9. What is the doping level of E, B and C layers

10 List the various current components in BJT.

11. Can transistor be replaced by two back to back connected diodes?

12. To operate a transistor as amplifier, emitter junction is forward biased and


collector junction is reverse biased. Why?

13. Which transistor configuration provides a phase reversal between the input
and output signals?
EXPERIMENT 5

h-PARAMETERS OF CE CONFIGURATION

1.AIM: To calculate the h-parameters of transistor in CE configuration.

2.APPRATUS:

1. Transistor BC107 - 1No.


2. Resistors 100 K Ώ 100 Ώ - 1No.Each
3. Ammeter (0-200µA) - 1No.
4. Ammeter(0-200mA -1No.
5. Voltmeter (0-20V) - 2Nos
6. Regulated Power Supply (0-30V) - 2Nos
7. Breadboard

3.THEORY:

The basic circuit diagram for studying input characteristics is shown in the
circuit diagram. The input is applied between base and emitter, the output is
taken between collector and emitter. Here emitter of the transistor is common
to both input and output and hence the name Common Emitter Configuration.
Input characteristics are obtained between the input current and input voltage
at constant output voltage. It is plotted between VBE and IB at constant VCE in
CE configuration.
Output characteristics are obtained between the output voltage and output
current at constant input current. It is plotted between VCE and IC at constant IB
in CE configuration.

A) INPUT CHARACTERISTICS:

The two sets of characteristics are necessary to describe the behaviour of the
CE configuration, in which one for input or base emitter circuit and other for
the output or collector emitter circuit. In input characteristics the emitter base
junction forward biased by a very small voltage VBB where as collector base
junction reverse biased by a very large voltage V CC. The input characteristics
are a plot of input current IB Versuss the input voltage VBE for a range of values
of output voltage VCE . The following important points can be observed from
these characteristics curves.

1. Input resistance is high as IB increases less rapidly with VB


2. The input resistance of the transistor is the ratio of change in base emitter
voltage ΔVBE to change in base current ΔIB at constant collector emitter
voltage (VCE) i.e... Input resistance or input impedance hie = ΔV BE / ΔIB at
VCE constant.

B) OUTPUT CHARACTERISTICS:

A set of output characteristics or collector characteristics are a plot of out put


current IC VS output voltage VCE for a range of values of input current IB .The
following important points can be observed from these characteristics curves.

1. The transistor always operates in the active region. i.e. the collector
current IC increases with VCE very slowly. For low values of the VCE
the IC increases rapidly with a small increase in VCE .The transistor
is said to be working in saturation region.
2. Output resistance is the ratio of change of collector emitter voltage
ΔVCE , to change in collector current ΔIC with constant IB. Output
resistance or Output impedance hoe = ΔVCE / ΔIC at IB constant.

Input Impedance hie = ΔVBE / ΔIB at VCE constant

Output impedance hoe = ΔVCE / ΔIC at IB constant

Reverse Transfer Voltage Gain hre = ΔVBE / ΔVCE at IB constant

Forward Transfer Current Gain hfe = ΔIC / ΔIB at constant VCE

CIRCUIT DIAGRAM:
h – Parameter model of CE transistor:

MODEL GRAPH:

A) INPUT CHARACTERSITICS:

i) calculation of hie ii) calculation of hre

OUPUT CHARACTERISITCS:

i) calculation of hfe
ii) calculation of hoe

TABULAR FORMS:

A) Input Characteristics:

VCE=0V VCE=6V
S.NO
VBE(V) IB(μA) VBE(V) IB(μA)
B) Output Characteristics:

IB = 20 µA IB = 40 µA IB = 60 µA

S.NO VCE VCE VCE


IC(mA) IC(mA) IC(mA)
(V) (V) (V)

PROCEDURE:

Input Characteristics:
1. Connect the circuit as shown in the circuit diagram.
2. Keep output voltage VCE = 0V by varying VCC.
3. Varying VBB gradually, note down base current IB and base-emitter
voltage VBE.
4. Step size is not fixed because of non linear curve. Initially vary VBB in
steps of 0.1V. Once the current starts increasing vary VBB in steps of
1V up to 12V.
5. Repeat above procedure (step 3) for VCE = 5V.
Output Characteristics:
1. Connect the circuit as shown in the circuit diagram.
2. Keep emitter current IB = 20 A by varying VBB.
3. Varying VCC gradually in steps of 1V up to 12V and note down
collector current IC and Collector-Emitter Voltage(VCE).
4. Repeat above procedure (step 3) for IB = 60µA, 0µA.

1. Plot the input characteristics by taking VBE on X-axis and IB on Y-axis


at a constant VCE as a constant parameter
2. Plot the output characteristics by taking VCE on X-axis and taking IC on
Y-axis taking IB as a constant parameter

Calculations from Graph:


1. Input Characteristics: To obtain input resistance find VBE and
IB for a constant VCE on one of the input characteristics.
Input impedance = hie = Ri = VBE / IB (VCE is constant)
Reverse voltage gain = hre = VEB / VCE (IB = constant)
2. Output Characteristics: To obtain output resistance find IC and
VCB at a constant IB.
Output admittance 1/hoe = Ro = IC / VCE (IB is constant)
Forward current gain = hfe = IC / IB (VCE = constant)

PRECAUTIONS:
1. While performing the experiment do not exceed the ratings of the
transistor. This may lead to damage the transistor.
2. Connect voltmeter and ammeter in correct polarities as shown in the
circuit diagram.
3. Do not switch ON the power supply unless you have checked the
circuit connections as per the circuit diagram.
4. Make sure while selecting the emitter, base and collector terminals of
the transistor.
The h-parameters for a transistor in CE configuration are:
a. The Input Resistance (hie) _______________Ohms.
b. The Reverse Voltage Gain (hre) _______________.
c. The Output Conductance (hoe) _______________ Mhos.
d. The Forward Current Gain (hfe) _______________.

RESULT:

VIVA QUESTIONS:

1. What are the h-parameters?


2. What are the limitations of h-parameters?
3. What are its applications?
4. Draw the Equivalent circuit diagram of H parameters?
5. Define H parameter?
6. What are tabular forms of H parameters monoculture of a transistor?
7. What is the general formula for input impedance?
8. What is the general formula for Current Gain?
9. What is the general formula for Voltage gain?
EXPERIMENT 6
FREQUENCY RESPONSE OF CE AMPLIFIER
AIM: - 1. To Design Transistor CE amplifier and find its voltage gain.
2.To draw the frequency response curve of CE amplifier

THEORY:
The single stage common emitter amplifier circuit shown above uses what is
commonly called "Voltage Divider Biasing" or “self biasing”. This type of biasing
arrangement uses two resistors as a potential divider network and is commonly used
in the design of bipolar transistor amplifier circuits. This type of biasing arrangement
greatly reduces the effects of varying Beta, (β) by holding the Base bias at a constant
steady voltage. This type of biasing produces the greatest stability.
The Common Emitter Amplifier circuit has a resistor in its Collector circuit. The
current flowing through this resistor produces the voltage output of the amplifier. The
value of this resistor is chosen so that at the amplifiers quiescent operating point, Q-
point this output voltage lies half way along the transistors load line. In Common
Emitter Amplifier circuits, capacitors C1 and C2 are used as Coupling Capacitors to
separate the AC signals from the DC biasing voltage. This ensures that the bias
condition set up for the circuit to operate correctly is not affected by any additional
amplifier stages, as the capacitors will only pass AC signals and block any DC
component. The output AC signal is then superimposed on the biasing of the following
stages. Also a bypass capacitor, CE is included in the Emitter leg circuit. This
capacitor is an open circuit component for DC bias meaning that the biasing currents
and voltages are not affected by the addition of the capacitor maintaining a good Q-
point stability.
However, this bypass capacitor short circuits the Emitter resistor at high frequency
signals and only RL plus a very small internal resistance acts as the transistors load
increasing the voltage gain to its maximum. Generally, the value of the bypass
capacitor, CE is chosen to provide a reactance of at most, 1/10th the value of RE at
the lowest operating signal frequency. A single stage Common Emitter Amplifier is
also an "Inverting Amplifier" as an increase in Base voltage causes a decrease in Vout
and a decrease in Base voltage produces an increase in Vout. The output signal is 180◦
out of phase with the input signal
OBSERVATIONS

INPUT VOLTAGE =20 MILLI VOLTS


PROCEDURE: -

1. Connect the circuit as shown in circuit diagram


2. Apply the input of 20mV peak-to-peak and 1 KHz frequency using Function
Generator
3. Measure the Output Voltage Vo (p-p) for various load resistors
4. Tabulate the readings in the tabular form.
5. The voltage gain can be calculated by using the expression Av= (V0/Vi)
6. For plotting the frequency response the input voltage is kept Constant at 20mV
peak-to-peak and the frequency is varied from 100Hz to 1MHz Using function
generator
7. Note down the value of output voltage for each frequency.
8. All the readings are tabulated and voltage gain in dB is calculated by Using The
expression Av=20 log10 (V0/Vi)
9. A graph is drawn by taking frequency on x-axis and gain in dB on y-axis On Semi-
log graph.
10. The band width of the amplifier is calculated from the graph Using the expression,
Bandwidth, BW=f2-f1
Where f1 lower cut-off frequency of CE amplifier, and
Where f2 upper cut-off frequency of CE amplifier
11.The bandwidth product of the amplifier is calculated using the Expression
Gain Bandwidth product=3-dBmidband gain X Bandwidth

PRECAUTIONS:
1. Connections should be made carefully and avoid loose connections.
2. Check connections before switching ON power supply.
3. Don’t apply over voltage
4. When you are not using the equipment switch them Off.
5.While performing the experiment do not exceed the ratings of the transistor. This
may lead to damage the transistor.
6.Connect voltmeter and ammeter in correct polarities as shown in the circuit diagram.
7.Do not switch ON the power supply unless you have checked the circuit connections
as per the circuit diagram.
8.Make sure while selecting the emitter, base and collector terminals of the transistor .

APPLICATIONS:
1. Common-emitter amplifiers are also used in radio frequency transceiver circuits.
2. Common emitter configuration commonly used in low-noise amplifiers.
RESULT:
1. Frequency response of BJT amplifier is plotted.
2. Gain = _______dB (maximum).
3. Bandwidth= fH--fL = _________Hz

VIVA QUESTIONS:

1. What is the phase difference between input and output waveforms of CE


amplifier?
2. What type of biasing is used in the given circuit?
3. If the given transistor is replaced by P-N-P, can we get the output or not?
4.What is the effect of emitter bypass capacitor on frequency response?
5.What is the effect of coupling capacitor?
6.What is the region of transistor so that it operates as an amplifier?
. 7.Draw the h-parameter model of CE amplifier.
8.How does transistor acts as an amplifier.
9.Mention the characteristics of CE amplifier
EXPERIMENT 7
FREQUENCY RESPONSE OF CC AMPLIFIER

AIM:
1. To measure the voltage gain of a CC amplifier
2. To draw the frequency response of the CC amplifier

APPRATUS:
1. Transistor BC 107 -1No.
2. Regulated Power Supply (0-30V) -1No.
3. Function Generator -1No.
4. CRO-1No.
5. Resistors
6. 33KΩ, 3.3KΩ, 330Ω, -1No.Each
7. 1.5KΩ, 1KΩ, 2.2KΩ & 4.7KΩ
8. Capacitors 10µF -2Nos 100µF -1No
9. . Breadboard
10. Connecting wires

THEORY:
In common-collector amplifier the input is given at the base and ground terminals
and the output is taken across the emitter and collector terminals. In this amplifier,
there is no phase inversion between input and output. The input impedance of the
CC amplifier is very high and output impedance is low. The voltage gain is less
than unity. Here the collector is at ac ground and the capacitors used must have a
negligible reactance at the frequency of operation. This amplifier is used for
impedance matching and as a buffer amplifier. This circuit is also known as
emitter follower. The most common use of the emitter follower is as a circuit,
which performs the function of impedance transformation over a wide range of
frequencies.
The input characteristics resemble that of a forward biased diode curve. This is
expected since the Base-Emitter junction of the transistor is forward biased. The
output characteristics are drawn between IE and VCE at constant IB. the emitter
current varies with VCE unto few volts only. After this the emitter current
becomes almost constant, and independent of VCE. The value of VCE up to which
the collector current changes with V CE is known as Knee voltage. The transistor
always operated in the region above Knee voltage, IE is always constant and is
approximately equal to IB.
PROCEDURE:
1. Connections are made as per the circuit diagram.
2. The voltage gain calculated by using the expression Av=V0/Vi
3. For plotting the frequency response the input voltage is kept constant a 20mV
peak-to- peak and the frequency is varied from 100Hzto 1MHz.
4. Note down the values of output voltage for each frequency.
5. The voltage gain in dB is calculated by using the expression, Av=20log
10(V0/Vi)
6. A graph is drawn by taking frequency on X-axis and gain in dB on y-axis on
semi-log graph sheet.
7. The Bandwidth of the amplifier is calculated from the graph using the
Expression,
Bandwidth BW=f2-f1
Where f1 is lower cut-off frequency of CE amplifier
f2 is upper cut-off frequency of CE amplifier
8. The gain Bandwidth product of the amplifier is calculated using the Expression,
Gain -Bandwidth product=3-dB midband gain X Bandwidth

PRECAUTIONS:
1. The input voltage must be kept constant while taking frequency response.
2. Proper biasing voltages should be applied.
3. The supply voltages should not exceed the rating of the transistor.
4. Meters should be connected properly according to their polarities.
5. While performing the experiment do not exceed the ratings of the transistor.
This may lead to damage the transistor.
6. Connect voltmeter and ammeter in correct polarities as shown in the circuit
diagram.
7. Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram.
8. Make sure while selecting the emitter, base and collector terminals of the
transistor.

RESULT:

VIVA QUESTIONS:
1. What are the applications of CC amplifier?
2. What is the voltage gain of CC amplifier?
3. What are the values of input and output impedances of the CC amplifier?
4. To which ground the collector terminal is connected in the circuit?
5. Identify the type of biasing used in the circuit?
6. Give the relation between α, β and γ.
7. Write the other name of CC amplifier?
8. What are the differences between CE, CB and CC?
9. When compared to CE, CC is not used for amplification. Justify your answer
10. What is the phase relationship between input and output in CC?
EXPERIMENT 8

8.TWO STAGE RCCOUPLED AMPLIFIER

AIM: To obtain the frequency response of’ a two stage RC coupled amplifier.
Calculate gain. & Calculate bandwidth.

Apparatus:

1. Transistors BC 107
2. Resistors
3. Capacitors
4. Signal Generators
5. CRO
6. Breadboard
7. Connecting wires

THEORY:

The output from a single stage amplifier is usually insufficient to drive an o/p
device. To achieve more gain, the o/p of one stage is given as the input to the
other stage which forms multistage amplifier. If the two stages are coupled by R
and C, then the amplifier is called RC coupled amplifier. The performance of an
amplifier can be determined from the following terms.

Gain:- The gain is defined as ratio of output to input. The gain of multistage
amplifier is equal to the product of gains of individual stages i.e G=G1.G2.G3.

Frequency Response:

At low frequencies (<50HZ) the reactance of coupling capacitor cc is high and


hence very small part of signal will pass from one stage to next stage. This
increases the loading effect of next stage and reduces the voltage gain. At high
frequencies, capacitance reduces. Due to this base emitter junction is low which
increases the base current. This reduces the amplification factor. At mid
frequencies, the voltage gain of the amplifier is Constant. In this range, as
frequency increases, reactance of CC reduces which tends to increase the gain.
At the same time, lower reactance means higher reactance of first stage and hence
lowers gain; these two factors cancel each other resulting in a uniform gain at mid
frequency
CIRCUIT DIAGRAM:

PROCEDURE

1. Connect the circuit as per the circuit diagram


2. Give 1 KHz signal, 25 mV (p-p) as Vs from signal generator
3. Observe the output on CRO for proper working of the amplifier
4. After ensuring the amplifier function, vary signal frequency from 50 Hz to
600 Hz in proper steps for 15 to 20 readings.
5. Keeping Vs = 25 mV (p-p) at every frequency,
6. note down the resetting output voltage and tabulate in a table.
7. Calculate gain db
8. plot on semi log graph paper for frequency VS gain db.
TABULAR FORM:

Input voltage =50mv

PRECAUTIONS:
1. Wires should be checked for good continuity
2. Transistor terminals must be identified and connected carefully
3. Avoid loose connections and give proper input Voltage

RESULT:

1. Frequency response of BJT in Two Stage RC Coupled Amplifier is plotted.


2. Gain = _______dB (maximum).
1. Bandwidth= fH--fL = _________Hz. At stage I
2. Bandwidth= fH--fL = _________Hz. At stage 2
VIVA QUESTIONS:

1. Why do you need more than one stage of amplifiers in practical circuits?
2. What is the effect of cascading on gain and bandwidth?
3. What happens to the 3dB frequencies if the number of stages of amplifiers
increases?
4. Why we use a logarithmic scale to denote voltage or power gains, instead of
using the simpler linear scale?
5. What is loading effect in multistage amplifiers?
EXPERIMENT 9

VOLTAGE SERIES FEEDBACK AMPLIFIER


AIM: To study the voltage gain, frequency response, and Bandwidth of a
Voltage Series feed-back amplifier with and without feedback.

THEORY:

Feedback plays a very important role in electronic circuits and the basic
parameters, such as input impedance, output impedance, current and voltage
gain and bandwidth, may be altered considerably by the use of feedback for a
given amplifier. A portion of the output signal is taken from the output of the
amplifier and is combined with the normal input signal and thereby the feedback
is accomplished. There are two types of feedback. They are i) Positive feedback
and ii) Negative feedback. Negative feedback helps to increase the bandwidth,
decrease gain, distortion, and noise, modify input and output resistances as
desired.

Here the amplifier and feedback network are connected in series-parallel.


A fraction of the output voltage is applied in series opposition to the input
voltage through feedback network Thus feedback voltage is given as As seen,
the input impedance of the amplifier and output impedance of the feedback
network appear in series to the input and therefore input impedance to the
amplifier is increased by factor (1 + βA). Similarly input to the feedback
network and output of the amplifier appear in parallel to the amplifier output.
PROCEDURE:

1. Connections are made as per circuit diagram.


2. Keep the input voltage constant at 20mV peak-peak and 1kHz frequency.
3.For different values of load resistance, note down the output voltage and
calculate the gain by using the expression Av = 20log(V0 / Vi ) db
4. Remove the emitter bypass capacitor and repeat STEP 2.And observe the
effect of feedback on the gain of the amplifier.
5.For plotting the frequency the input voltage is kept constant at 20mV peak-
peak and the frequency is varied from 100Hz to 1MHz.
6. Note down the value of output voltage for each frequency.
7. All the readings are tabulated and the voltage gain in dB is calculated by
using expression 8. Av = 20log (V0 / Vi ) dB
8.. A graph is drawn by taking frequency on X-axis and gain on Y-axis on semi
log graph
9. The Bandwidth of the amplifier is calculated from the graph using the
expression
Bandwidth B.W = f2 – f1.
Where f1 is lower cutt off frequency of CE amplifier
f 2 is upper cutt off frequency of CE amplifier
13. The gain-bandwidth product of the amplifier is calculated by using the
expression
Gain-Bandwidth Product = 3-dB mid band gain X Bandwidth
APPLICATIONS:
1. They are used in almost all electronic amplifiers.
2. They are used in regulated power supplies.
3. In amplifiers having large bandwidth.
VIVA QUESTIONS:
1.What is feedback?
2. What are the characteristics of feedback?
3. What is meant by sampling and mixing?
4. What are the configurations of feedback amplifiers?
5. What is the effect of feedback on an amplifier?
6. What is the effect of feedback on input and output resistances?
EXPERIMENT-10

CURRENT SHUNT FEEDBACK AMPLIFIER


AIM:
To determine the effect of feedback on the frequency response of a current
shunt feedback amplifier.
1. To calculate gain without feedback.
2. To calculate gain with feedback.

THEORY:

Feedback plays a very important role in electronic circuits and the basic
parameters, such as input impedance, output impedance, current and voltage
gain and bandwidth, may be altered considerably by the use of feedback for a
given amplifier. A portion of the output signal is taken from the output of the
amplifier and is combined with the normal input signal and thereby the
feedback is accomplished. There are two types of feedback. They are i) Positive
feedback and ii) Negative feedback. Negative feedback helps to increase the
bandwidth, decrease gain, distortion, and noise, modify input and output
resistances as desired. A current shunt feedback amplifier circuit is illustrated in
the figure. It is called a series-derived, shunt-fed feedback. The shunt
connection at the input reduces the input resistance and the series connection at
the output increases the output resistance. This is a true current amplifier.

PROCEDURE:
1. Connect the circuit as shown in figure
2. Adjust input signal amplitude in the function generator and observe an
amplified voltage at the output without distortion
. 3. By keeping input signal voltage, say at 50 mV, vary the input signal
frequency from 10HZ to 1 MHz as shown in tabular column and note the
corresponding output voltage.
4. Calculate the voltage gain in dB using the formula Av=20 log(Vo/Vi).
5. Plot AV VS frequency on the Semi-log Sheet.
6. For current shunt feedback amplifier with feedback connect the output of the
feedback amplifier to the other channel of the CRO and Repeat the above
procedure.

OBSERVATIONS

PRECAUTIONS:
1. All the connections are to be connected properly.
2. Check the connections before giving the power supply
3. Observations should be taken carefully.
APPLICATIONS:
1. They are used in almost all electronic amplifiers.
2. They are used in regulated power supplies.
3. In amplifiers having large bandwidth.

RESULT:
The Av of the current shunt feedback amplifier is and the bandwidth is
________without feedback and The A v of the current shunt feedback amplifier
is ________and the bandwidth is _________with feedback

. VIVA QUESTIONS:
1. What is feedback?
2. What are the characteristics of feedback?
3. What is meant by sampling and mixing?
4. What are the configurations of feedback amplifiers?
5. What is the effect of feedback on an amplifier?
6. What is the effect of feedback on input and output resistances
EXPERIMENT 11
COLPITTS OSCILLATOR

AIM:
Find practical frequency of Colpitt’s oscillator and to compare it with theoretical
Frequency for 1. L= 20mH and C= 0.001µF, 2. L= 20mH and 0.1µF

COMPONENTS :

THEORY:
The Colpitts circuit, like other LC oscillators, consists of a gain device with its
output connected to its input in a feedback loop containing a parallel LC circuit
(tuned circuit) which functions as a bandpass filter to set the frequency of
oscillation. Colpitts oscillator is the electrical dual of a Hartley oscillator, where
the feedback signal is taken from an "inductive" voltage divider consisting of
two coils in series (or a tapped coil). L and the series combination of C1 and C2
form the parallel resonant tank circuit which determines the frequency of the
oscillator. The voltage across C2 is applied to the base-emitter junction of the
transistor, as feedback to create oscillations. Here the voltage across C1 provides
feedback. The frequency of oscillation is approximately the resonant frequency
of the LC circuit, which is the series combination of the two capacitors in
parallel with the inductor. The actual frequency of oscillation will be slightly
lower due to junction capacitances and resistive loading of the transistor. As
with any oscillator, the amplification of the active component should be
marginally larger than the attenuation of the capacitive voltage divider, to obtain
stable operation. Thus, a Colpitts oscillator used as a variable frequency
oscillator (VFO) performs best when a variable inductance is used for tuning, as
opposed to tuning one of the two capacitors. If tuning by variable capacitor is
needed, it should be done via a third capacitor connected in parallel to the
inductor (or in series as in the Clapp oscillator).

CIRCUIT DIAGRAM:

PROCEDURE:-

1. Connect the circuit as shown in the figure


2. Connect the output of the Colpitts Oscillator kit to the CRO.
3. Observe the sinusoidal signal as an output and note down the time period
of the oscillation
4. Compare the practical frequency with the theoretical frequency

EXPECTED GRAPH:
PRECAUTIONS:-

1.No loose connections at the junctions & Check the continuity of the connecting
terminals before going to connect the circuit.
2. Identify the emitter, base and collector of the transistor properly before
connecting it in the circuit.
3. The horizontal length between two successive peaks should accurately be
measure

APPLICATIONS
1. Colpitts oscillators are used for high frequency range and high frequency
stability
2. It is used for generation of sinusoidal output signals with very high
frequencies.
3. A surface acoustical wave (SAW) resonator
4. It is used for the development of mobile and radio communications.
5. Used for applications in which undamped and continuous oscillations are
desired for functioning.

RESULT:
1. For C=0.01µF, 0.1uf & L= 20mH
Theoretical frequency = _____________
Practical frequency =_____________
2. For C=0.1µF, 0.1uf & L= 20mH
Theoretical frequency =_____________
Practical frequency =____________
VIVA-QUESTIONS:
1. What is an Oscillator?
2. What is the main difference between an amplifier and an oscillator?
3. State Barkhausen criterion for oscillation.
4. State the factors on which oscillators can be classified.
5. What are the factors which contribute to change in frequency in oscillators
6.State the applications of coliptt’s oscillator?
EXPERIMENT 12

HARTLEY OSCILLATOR

AIM:
Find practical frequency of a Hartley oscillator and to compare it with
theoretical frequency for L = 10mH and C = 20nF.

THEORY:

In a Hartley oscillator the oscillation frequency is determined by a tank circuit


comprising of two inductors and one capacitor. The inductors are connected in
series and the capacitor is connected across them in parallel. Hartley oscillators
are commonly used in radio frequency (RF) oscillator applications and the
recommended frequency range is from 20KHz to 30MHz. Hartley oscillators
can be operated at frequencies lower than 20KHz, but for lower frequencies the
inductor value need to be high and it has a practical limit.
The circuit diagram of a typical Hartley oscillator is shown in the figure .
CIRCUIT DIAGRAM:

PROCEDURE:
1. Connect the circuit as shown in figure.
2. With C6=20nF capacitor and L1=L2=10mH in the circuit and observe the
waveform.
3. Time period of the waveform is to be noted and frequency is to be calculated
by the formula f = 1/T .
4. Find the theoretical frequency from the formula
𝑓 = 1 2П√𝐿𝑡𝐶
Where LT = L1 + L2 = 10mH + 10mH = 20mH
5. compare theoretical and practical values
OBSERVATIONS:

PRECAUTIONS:
1. Observations should be taken carefully
2. Identify the emitter, base and collector of the transistor properly before
connecting it in the circuit.
3. The horizontal length between two successive peaks should accurately be
measured.

APPLICATIONS
1. The Hartley oscillator is to produce a sine wave with the desired frequency
2. Hartley oscillators are mainly used as radio receivers
. 3. The Hartley oscillator is Suitable for oscillations in RF (Radio-Frequency)
range, up to 30MHZ
VIVA QUESTIONS:

1. Classification of oscillators.
2. Give the applications of oscillator
3. Give an example for LC oscillator.
4. Which phenomenon is employed for crystal oscillator.

5. What is the main difference between an amplifier and an oscillator?

6. State Barkhausen criterion for oscillation.

7. State the factors on which oscillators can be classified.

8. What are the factors which contribute to change in frequency in


oscillators?

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