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Assignment 4 Solution

The document contains solutions to an assignment on semiconductor junctions, specifically focusing on p-n junction diodes. It addresses various concepts such as depletion region width, ideality factor, built-in potential, and diffusion coefficients, providing calculations and explanations for each. Additionally, it includes multiple-choice questions with correct answers related to the behavior of p-n junctions under different conditions.

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Kalu Bhai
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4 views

Assignment 4 Solution

The document contains solutions to an assignment on semiconductor junctions, specifically focusing on p-n junction diodes. It addresses various concepts such as depletion region width, ideality factor, built-in potential, and diffusion coefficients, providing calculations and explanations for each. Additionally, it includes multiple-choice questions with correct answers related to the behavior of p-n junctions under different conditions.

Uploaded by

Kalu Bhai
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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Solar Photovoltaics: Principles, Technologies, and Materials

Week 4: Semiconductor junctions

(Assignment 4 Solution) Feb 8, 2023

1. Which of the following is TRUE for the depletion region width on heavily doping the n-
side in a p-n junction diode?
a. Depletion region width increases on the n-side
b. Depletion region width decreases on the n-side
c. Depletion region width increases on the p-side
d. Depletion region width increases on the p-side
e. Depletion region width remains constant

2. A silicon p-n junction diode has an ideality factor (η) of 1.5. The change in the voltage
when the current changes from 1 mA to 20 mA is:
a. 0.225 V
b. 0.156 V
c. 0.096 V
d. 0.117 V
e. 0.192 V
𝒒𝑽
Solution: 𝑰 = 𝑰𝟎 (𝒆𝜼𝒌𝑻 − 𝟏)
𝑘𝑇 𝐼
So, change in voltage is given as: Δ𝑉 = 𝜂 ln (𝐼2)
𝑞 1

20 × 10−3
Δ𝑉 = 1.5 × 0.026 ln ( )
10−3

= 1.5 × 0.026 × 2.996 = 𝟎. 𝟏𝟏𝟕 𝑽

3. Following is/are CORRECT for depletion region in a p-n junction diode:


a. Maximum value of potential occurs at the junction of the diode.
b. Variation of electric field with position is linear.
c. Ratio of depletion region width on n- and p-side depends on the ratio of dopant
concentration.
d. Charge density gradients is proportional to the electric field.

4. The built-in potential in a p-n junction diode is dropped more in:


a. Bulk region
b. Region of high doping concentration
c. Region of low doping concentration
d. Does not change with doping concentration

5. The reverse saturation current in a p-n junction diode does not depend on:
a. Applied bias
b. Carrier lifetime
c. Minority carrier concentration
d. Diffusion length of charge carriers

6. The application of a reverse bias to a p-n junction diode will result in:
a. Raising the potential barrier for carrier transport
b. Decreasing the charge carrier concentration
c. Lowering the potential barrier for carrier transport
d. Changing the bandgap of the semiconductors

7. Which of the following take(s) place on applying forward bias to a p-n junction diode?
a. Electron diffusion current from p-side to n-side increases.
b. Hole diffusion current from p-side to n-side increases.
c. Hole diffusion current from n-side to p-side increases.
d. Electron diffusion current from n-side to p-side increases.
e. Hole diffusion current from p-side to n-side does not change.

8. The mobility of electrons in an n-type semiconductor is 1200 cm2/V-s. The value of


diffusion coefficient (in cm2/s) for electrons is:
a. 35.6
b. 43.2
c. 19.6
d. 39.1
e. 31.2
𝑘𝑇 𝑐𝑚2
Solution: 𝐷𝑛 = 𝜇𝑛 × = 1200 × 0.026 𝑉 = 𝟑𝟏. 𝟐 𝒄𝒎𝟐 /𝒔
𝑞 𝑉.𝑠

9. The correct Einstein relationship for electrons in a non-degenerate and non-uniformly


doped semiconductor is:
𝑞
a. 𝐷𝑛 = 𝜇𝑛 𝑘𝑇
𝒌𝑻
b. 𝑫𝒏 = 𝝁𝒏 𝒒
𝑘𝑇
c. 𝐷𝑛 = 𝜇𝑝 𝑞
𝑞
d. 𝐷𝑛 = 𝜇𝑝 𝑘𝑇
𝑘𝑇
e. 𝐷𝑝 = 𝜇𝑝 𝑞

10. Following assumption(s) is/are required in the bulk regions of a p-n junction diode for the
calculation of total current in the forward bias:
a. Diffusion based minority carrier current
b. Low level injection is maintained
c. No generation and recombination
d. High level injection is maintained

11. The depletion approximation for a p-n junction diode in dark and without bias is:
a. Electric field is non-zero in both n and p quasi neutral regions.
b. Electric field is zero in both n and p quasi neutral regions.
c. Electric field is finite in the depletion region.
d. Electric field is zero in both the depletion and quasi neutral regions.
e. Electric field is non-zero in the whole device.
12. Which of the following represents the long-base approximation for a p-n junction diode?
(Here, Ln and Lp are the diffusion lengths of electrons and holes respectively, xn and xp are
the ends of equilibrium depletion region on the n- and p-side of the diode)
a. 𝑥𝑛 ≪ 𝐿𝑛 𝑎𝑛𝑑 𝑥𝑝 ≪ 𝐿𝑝
b. 𝑥𝑛 ≫ 𝐿𝑛 𝑎𝑛𝑑 𝑥𝑝 ≫ 𝐿𝑝
c. 𝑥𝑛 ≪ 𝐿𝑝 𝑎𝑛𝑑 𝑥𝑝 ≪ 𝐿𝑛
d. 𝒙𝒏 ≫ 𝑳𝒑 𝒂𝒏𝒅 𝒙𝒑 ≫ 𝑳𝒏

13. A silicon-based p-n junction diode maintained at room temperature under equilibrium
conditions has a p-side doping of NA = 1017 cm-3 and an n-side doping of ND = 1016 cm-3
respectively. The value of built-in potential would be: (Intrinsic carrier concentration in
silicon at 300 K is 1010 cm-3)
a. 0.778 V
b. 0.696 V
c. 0.512 V
d. 0.852 V
e. 0.458 V
𝑘𝑇 𝑁 𝐴 𝑁𝐷 1017 ×1016
Solution: 𝑉𝑏𝑖 = 𝑙𝑛 ( ) = 0.026 × 𝑙𝑛 ( ) = 𝟎. 𝟕𝟕𝟖 𝑽
𝑞 𝑛𝑖2 (1010 )2

14. A homojunction diode is under a forward bias condition with applied voltage 0.3 V. If the
doping concentrations on both p- and n-side of diode is 1015 cm-3 and intrinsic carrier
concentration is 1010 cm-3 at 300 K, the junction potential (in volts) of the diode would be:
a. 0.312
b. 0.298
c. 0.225
d. 0.364
e. 0.411
𝑘𝑇 𝑁 𝐴 𝑁𝐷 1015 ×1015
Solution: 𝑉𝑏𝑖 = 𝑙𝑛 ( ) = 0.026 × 𝑙𝑛 ( ) = 𝟎. 598 𝑉
𝑞 𝑛𝑖2 (1010 )2

𝑉𝑗 = 𝑉𝑏𝑖 − 𝑉𝐴 = 0.598 − 0.3 = 𝟎. 𝟐𝟗𝟖 𝑽


15. The diffusion coefficients of electrons and holes in a semiconductor are 33.2 and 12.6 cm2/s
respectively, and carrier lifetimes for electrons and holes are 0.05 and 0.21 µs, respectively.
The ratio of the diffusion lengths of electrons and holes in the semiconductor is:
a. 0.556
b. 0.391
c. 0.581
d. 0.792
e. 0.812
𝑳𝒏 𝑫 ×𝝉 𝟑𝟑.𝟐×𝟎.𝟎𝟓 𝟏.𝟔𝟔
Solution: = √𝑫𝒏 ×𝝉𝒏 = √𝟏𝟐.𝟔×𝟎.𝟐𝟏 = √𝟐.𝟔𝟒𝟔 = √0.6274 = 𝟎. 𝟕𝟗𝟐
𝑳𝒑 𝒑 𝒑

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