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Assignment 2_Solution

The document contains solutions to various assignments related to the principles and technologies of solar photovoltaics, focusing on the physics of semiconductors. It includes calculations for global radiation, density of states, electron energy variation, and properties of intrinsic and p-type semiconductors. Additionally, it addresses carrier mobility, resistivity, and methods for measuring solar radiation.

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Kalu Bhai
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15 views

Assignment 2_Solution

The document contains solutions to various assignments related to the principles and technologies of solar photovoltaics, focusing on the physics of semiconductors. It includes calculations for global radiation, density of states, electron energy variation, and properties of intrinsic and p-type semiconductors. Additionally, it addresses carrier mobility, resistivity, and methods for measuring solar radiation.

Uploaded by

Kalu Bhai
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Solar Photovoltaics: Principles, Technologies, and Materials

Week 2: Basics Physics of Semiconductors

(Assignment 2 Solution)

1. The monthly average of daily extraterrestrial radiation falling on a horizontal surface is


33,250 kJ/m2-day and the ratio of the monthly average of sunshine hours per day to the
monthly average maximum possible sunshine hours is 0.49. The empirical constants a and
b are given as 0.26 and 0.43, respectively. What would be the monthly average daily global
radiation in kJ/m2-day?
a. 11252
b. 15650
c. 19262
d. 22561
e. 17894

Solution: 𝐻 ̅0 [𝑎 + 𝑏 ( 𝑆 )] = 33250 × [0.26 + 0.43 × 0.49]


̅𝑔 = 𝐻
𝑆 𝑚𝑎𝑥

= 33250 × 0.4707 = 15650 kJ/m2-day

2. Which of the following is/are correct relation(s) for the density of states D(E) in 3-
dimension?
a. 𝐷(𝐸) ∝ 𝐸 −0.5
b. 𝐷(𝐸) ∝ 𝐸 3/2
c. 𝐷(𝐸) ∝ 𝐸 −2
d. 𝑫(𝑬) ∝ 𝑬𝟎.𝟓
e. 𝐷(𝐸) ∝ 𝐸 −3/2

3. The nature of variation of electron energy (E) with wave vector (k) for an electron in a free
space is:
a. Sinusoidal
b. Hyperbolic
c. Parabolic
d. Circular

4. In an indirect bandgap semiconductor, an electronic transition between the conduction and


valance band results in:
a. Change in momentum
b. Change in energy
c. No change in energy
d. No change in momentum
e. Change in both energy and momentum

5. The reduction of carrier lifetime in a semiconductor results in:


a. Increase in the SCR dark current
b. Increase in the diffusion assisted dark current
c. Decrease in the SCR dark current
d. Decrease in the diffusion assisted dark current

6. Following is/are correct statement(s) for the carrier mobility in a non-degenerate


semiconductor:
a. It decreases with decreasing temperature.
b. It decreases with increasing temperature.
c. It monotonically decreases for high doping concentrations.
d. It is relatively constant for low doping concentrations.
e. It increases for high doping concentrations.

7. Which of the following condition(s) is/are NOT applicable for a degenerate


semiconductor?
a. 𝐸𝐶 − 𝐸𝐹𝑁 < 3𝑘𝑇
b. 𝐸𝐹𝑃 − 𝐸𝑉 < 3𝑘𝑇
c. 𝑬𝑪 − 𝑬𝑵
𝑭 > 𝟑𝒌𝑻

d. 𝑬𝑷𝑭 − 𝑬𝑽 > 𝟑𝒌𝑻


e. 𝐸𝐶 − 𝐸𝐹𝑁 = 3𝑘𝑇
8. The Si sample maintained at 300 K has electron concentration of 108 /cm3. If the intrinsic
carrier concentration in Si is 1010 /cm3, the hole concentration (in cm-3) in the sample under
equilibrium conditions would be:
a. 1010
b. 1014
c. 108
d. 1012
e. 1018

9. For an intrinsic semiconductor with a band gap of 0.72 eV, what is the position of EF at
300 K if 𝑚ℎ∗ = 5𝑚𝑒∗ ?
a. 0.39 eV
b. 0.52 eV
c. 0.35 eV
d. 0.42 eV

10. In a p-type semiconductor at 300 K, if acceptor density is 1015 cm-3 while intrinsic carrier
concentration is 1010 cm-3, the position of the fermi level of the semiconductor will be at:
a. 0.357 eV above intrinsic Fermi level
b. 0.417 eV above intrinsic Fermi level
c. 0.259 eV below intrinsic Fermi level
d. 0.298 eV below intrinsic Fermi level
e. 0.417 eV below intrinsic Fermi level

(𝐸𝐹 −𝐸𝑖 ) 𝑁 1015


Solution: = 0.0259 𝑙𝑛 ( 𝑛𝐴) = 0.0259 𝑙𝑛 (1010 )
𝑞 𝑖

= 0.0259 × 11.51 = 0.298 eV

11. A semiconductor material has an intrinsic carrier concentration of 1.2 × 1017 m-3. If electron
and hole mobilities are 0.17 and 0.08 m2/V-s, the resistivity (in Ω-m) of the semiconductor
is:
a. 2.08 × 102
b. 3.12 × 102
c. 2.81 × 103
d. 4.51 × 102
e. 2.91 × 103
1
Solution: 𝜌= 𝑛𝑖 𝑒 (𝜇𝑒 +𝜇ℎ )

1
=
1.2 × 1017 × 1.6 × 10−19 × (0.17 + 0.08)
1
= = 𝟐. 𝟎𝟖 × 𝟏𝟎𝟐
10−2 × 0.48

12. The resistivity of an intrinsic semiconductor is 4.5 Ω-m at 293 K and 2.0 Ω-m at 305 K.
The energy band gap (in eV) of the semiconductor is:
a. 0.96
b. 0.45
c. 0.27
d. 0.56
e. 0.18
𝐸𝑔 1 1 𝜌 3𝑇
Solution: ( − ) = 𝑙𝑛 1 + 1
2𝑘 𝑇 𝑇 1 𝜌 2 2𝑇 2 2

𝐸𝑔 = 1.54 × 10−19 𝐽 = 𝟎. 𝟗𝟔 𝒆𝑽

13. In an intrinsic semiconductor such as silicon, the mobility of electrons is greater than the
mobility of holes due to:
a. Higher effective mass of electrons as compared to holes
b. Higher effective mass of holes as compared to electrons
c. Zero effective mass of electrons
d. Zero effective mass of holes

14. Which of the following is/are used to measure solar radiation?


a. Anemometer
b. Thermistors
c. Pyranometer
d. Pyrheliometer
e. Concentrators

15. The current density in intrinsic semiconductors varies as:


𝐸𝑔
a. 𝑘𝐵 𝑇
𝐸𝑔2
b. 𝑘𝐵 𝑇
𝐸𝑔
c. 𝑒𝑥𝑝(− 2𝑘 𝑇)
𝐵
𝑬𝒈
d. 𝒆𝒙𝒑(− 𝒌 𝑻)
𝑩
𝐸𝑔
e. 𝑒𝑥𝑝(𝑘 𝑇)
𝐵

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