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Mid Sem Questions Final

The document outlines the mid-term exam details for the ECE216 course on Semiconductor Devices and Circuits at LNM Institute of Information Technology for the 2023-24 academic year. It includes instructions, a breakdown of questions by course outcomes, and specific questions covering various semiconductor concepts. The exam consists of 10 compulsory questions with a total of 40 marks, divided into two sections.

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11 views2 pages

Mid Sem Questions Final

The document outlines the mid-term exam details for the ECE216 course on Semiconductor Devices and Circuits at LNM Institute of Information Technology for the 2023-24 academic year. It includes instructions, a breakdown of questions by course outcomes, and specific questions covering various semiconductor concepts. The exam consists of 10 compulsory questions with a total of 40 marks, divided into two sections.

Uploaded by

vash27221
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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LNMIIT/B. Tech.

/ECE/PC/2023-24/EVEN/ECE216/MT

The LNM Institute of Information Technology, Jaipur


ECE216: Semiconductor Devices and Circuits
2023-24 (Even Semester)
Mid Term Exam
Max Marks: 40 Date: 6th March 2024 Time: 90 Mins

Instructions:
➢ This paper contains 10 questions, and all the questions are compulsory.
➢ No doubts will be entertained during the exam.
➢ Please make appropriate assumptions if you find any question has any data missing.

Total Total
CO1 CO2 CO3 CO4 CO5 CO6
Questions Marks
10 40 Q1 - Q3 Q4 - Q6 Q7 - Q10 --- --- ---
CO weightage 9/40 = 22.5% 11/40 = 27.5% 20/40 = 50% --- --- ---

S. No. Constants Value


1.38 × 10−23 J/K
1 Boltzmann Constant:
8.627 × 10−5 eV/K
2 ni for Silicon 1.5 × 1010 cm-3
3 ni for Germanium 2.5 × 1013 cm-3

--------------------------------------------------------------------------------------------------------------------------
Section – 1 (Maximum 15 Marks)

(All Questions in this Section Carry a Maximum of 3 Marks)

Q1) Mention five important terms related to crystal lattice with their appropriate ways of representation.
Briefly state the significance of Bravais Lattices. [3 Marks]

Q2) Draw planes for the following miller indices in a cube: [3 Marks]
a) (3 1 2) b) (1 2 3)
Q3) Explain the concept of Linear Combination of Atomic Orbitals (LCAO) as applied to semiconductor
materials. Using an example shows how the above concept helps to understand the energy band
characteristics of semiconductor materials. [3 Marks]

Q4) Write the equation of the total current that flows in a semiconductor. Furthermore, briefly discuss
the effects of doping concentration, electric field strength, and temperature on the drift and diffusion
currents. [3 Marks]

Q5) Write the equation of the Fermi Level and describe how the Fermi level relates to the energy band
diagram of a semiconductor and discuss the factors that influence its position relative to the
conduction and valence bands. [3 Marks]

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LNMIIT/B. Tech./ECE/PC/2023-24/EVEN/ECE216/MT

--------------------------------------------------------------------------------------------------------------------------
Section – 2 (Maximum 25 Marks)

(All Questions in this Section Carry a Maximum of 5 Marks)

Q6) Determine the concentration of free electrons and holes in a sample of Germanium at 300 °K with
a concentration of donor atoms equal to 2 × 1014 atoms/cm3 and a concentration of acceptor atoms
equal to 3 × 1014 atoms/cm3. Is this a p-type or N-type semiconductor? [ 5 Marks]

Q7) A P-type silicon can be doped in the range from 5×1014 cm-3 to 1020 cm-3. Determine the maximum
possible number of minority electrons in a neutral P-type region if the device area is limited to AD
= 1 cm × 1 cm and the thickness of the P-type region is limited to tP = 100 μm. Assume room
temperature and full acceptor ionization. [ 5 Marks]

Q8) We have a P-N junction with a gradual impurity profile. The net impurity concentration is N(x) =
𝒂𝒙. For 𝒙< 𝟎, the semiconductor is P‐type, whereas for 𝒙 > 𝟎, it becomes N‐type. Assume that the
Space Charge Region (SCR) has a total width of W. Find the expression for the electric field in the
SCR. [5 Marks]

Q9) Find the concentration of holes in P-type silicon at 300 °K if its conductivity is 1 (Ω-cm)-1, given
that the mobility of holes in silicon is 500 cm2/Vs. Neatly draw the relationship between the mobility
of holes and electrons versus impurity concentration in semiconductors. [ 3 + 2 Marks]

Q10) Derive the Schrodinger equation to show the relationship between potential variation ‘V’ and
energy Eigenvalue “E”. Illustrate its application in describing the energy levels and wave functions
of electrons within a simple hydrogen atom. [5 Marks]

/* ****************************************END **************************************** */

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