NEET ANSWER KEY & SOLUTIONS

SUBJECT :- PHYSICS
th
CLASS :- 12 PAPER CODE :- CWT-11
CHAPTER :- SEMICONDUCTOR
ANSWER KEY
1. (C) 2. (A) 3. (B) 4. (B) 5. (B) 6. (D) 7. (A)
8. (D) 9. (B) 10. (B) 11. (A) 12. (B) 13. (C) 14. (C)
15. (C) 16. (A) 17. (B) 18. (A) 19. (C) 20. (C) 21. (B)
22. (D) 23. (A) 24. (B) 25. (C) 26. (C) 27. (B) 28. (B)
29. (B) 30. (A) 31. (D) 32. (D) 33. (C) 34. (B) 35. (A)
36. (D) 37. (C) 38. (D) 39. (A) 40. (A) 41. (D) 42. (B)
43. (D) 44. (D) 45. (D) 46. (B) 47. (B) 48. (D) 49. (D)
50. (A)
SOLUTIONS
13. (C)
SECTION-A
Sol. After a large reverse voltage is PN-
1. (C)
junction diode, a huge current flows in the
reverse direction suddenly. This is called
2. (A) Breakdown of PN-junction diode.
Sol. With temperature rise conductivity of
semiconductors increases, that's why 14. (C)
resistance of semiconductor is decrease. Sol. At junction a potential barrier/depletion
layer is formed, with N-side at higher
3. (B) potential and P-side at lower potential.
Pantavalen t N - type
Therefore there is an electric field at the
Sol. Ge + junction directed from the N-side to P-side
impurity semiconduc tor
E
P N
Holes
4. (B)
Electrons
Sol. Impurity increases the conductivity.

5. (B)

6. (D) 15. (C)

Sol. In P-type semiconductors, holes are Sol. In forward biasing of PN-junction diode,
majority charge carrier and electrons are current mainly flows due to the diffusion of
minority charge carriers. majority charge carriers.

7. (A) 16. (A)

Sol. Phosphorus is a pentavalent impurity so ne Sol. At high reverse voltage, the minority
> nh. charge carriers, acquires very high
velocities. These by collision break down
8. (D)
the covalent bonds, generating more
9. (B) carriers. This mechanism is called
Sol. As maximum energy does not depend on Avalanche breakdown.
the intensity of light.
17. (B)
10. (B) Sol. When reverse bias is increased, the
electric field at the junction also increases.
11. (A) At some stage the electric field breaks the
Sol. Depletion layer consist of mainly stationary
covalent bond, thus the large number of
ions.
charge carriers are generated. This is
called Zener breakdown.
12. (B)
Sol. Current flow is possible and 18. (A)
V (4  1)
i   10  2 A
R 300 19. (C)

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20. (C) 33. (C)
Sol. In photodiode, it is illuminated by light Sol. If VA > VB, the diode is in forward biased
radiations, which in turn produces electric and the current passes through both the
current. resistances. So equivalent resistance Req
= 5Ω
If VA < VB, the diode is in reverse biased,
21. (B) thus hardly any current would pass
Sol. For ‘OR’ gate X  A  B through the upper resistance of 10Ω
i.e. 0  0  0 , 0  1  1 , 1  0  1 , 1  1  1 Thus, Req = 10Ω.

22. (D) 34. (B)

Sol. The output D for the given combination
D  ( A  B).C  ( A  B)  C 35. (A)
If ABC0 then
D  (0  0)  0  0  0  1  1  1 SECTION-B
If A  B 1 , C0 then 36. (D)
D  (1  1)  0  1  0  0  1  1 81.2
Sol. For full wave rectifier 
rƒ
1
23. (A) RL
Sol. The Boolean expression for ‘NOR’ gate is  nmax = 81.2% (rƒ << RL)
Y  AB
i.e. if A  B  0 (Low), Y  0 0  0 1 37. (C)
(High)
38. (D)
24. (B) Sol. In a p-n junction diode, majority carriers
Sol. For ‘AND’ gate, if output is 1 then both are holes on p-side and electrons on n-
inputs must be 1. side. Holes, thus diffuse to n-side and
electrons to p-side. Thus diffusion causes
25. (C) an excess positive charge in then-region
A and an excess negative charge in the p-
region and an excess negative charge in
Sol. Y
the p-region near the jjunction. Thus
B double layer of charge creates an electric
field which exerts a force on the electrons
Y  AB
and holes, against their diffusion. Thus
According to De morgan’s theorem
electric field becomes strong enough as
Y  A  B  A .B  A.B diffusion proceeds to stop it. In the
This is the output equation of ‘AND’ gate. equilibrium position, there is a barrier, for
charge motion with the n-side at a higher
26. (C) potential then the p-side.
The junction region has a very low density
27. (B) of either p or n-type carriers, because of
Sol. The output of OR gate is Y  A  B . inter diffusion. It is called depletion region.
There is a barrier VB associated with it.
28. (B) This is the potential barrier.

29. (B) 39. (A)

Sol. When the connection of battery is
Sol. Two ‘NAND’ gates are required as follows
reversed, then a semiconduction device is
reverse biased. We know that in forward
A AB biasing of p-n junction the current is of the
Y order of milliampere while in reverse
B
biassing the current is of the order of
Y  AB. AB  AB microampere (negigible). Thus, device is a
p -n junction.
30. (A) 40. (A)
Sol. Due to have revise blasing the width of
deplection region increases and current
31. (D)
flowing throgh the diode is almost zero . In
the case electric field is almost zero at the
32. (D) middle of the depletion region

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41. (D) 46. (B)
Sol. Diode is forward biased in first half cycle
Sol. Y = A  A = A  A  A , which is a NOT
and amplitude of signal is 5V.
gate.

47. (B)
Correct choice: (D)
Sol. The device that can act as a complete
42. (B) circuit is integrated circuit (.C.).
Sol. Diode in revers by so current thrugh A1 is
zero.
48. (D)
43. (D) Sol. ni2 = nenh
Sol. The term LED is abbreviated as ‘Light
Emitting Diode’. It is forward biased p-n
junction which emits spontaenous (1.5 × 1016)2 = ne(4.5 × 1022)
radiation. Current in the circult = 10 mA =
10 × 10–3 A and voltage in the circuit = 6
ne = 0.5 × 1010
– 2 = 4v. From ohm’s law,
v 4 ne = 5 × 109
 R= = = 400 
 10  10–3 nh = 4.5 × 1022
44. (D) nh >> ne
Sol. Key Idea :Gates-I and II are NOR gates. Semiconductor is p–type and ne = 5 × 109
We can simplify the gate circuit as
m–3 .

49. (D)
Here. gates-I and II are NOR gates. The Sol. Voltage across zener diode is constant
output (A + B) of gate-I will be appeared
as input of gate-II. The final output is
Y=A+B=A+B
This is the Boolean expression of OR gate
whose truth table is given below :
A B Y
0 0 0 15 volt
0 1 1 (i)1k = = 15 mA
1k
1 0 1
(20  15)V 5V 20
1 1 1 (i)250 = = = A
250 250 1000
45. (D) = 20 mA
Sol.  (i)zener diode = (20 – 15) = 5 mA.

50. (A)
Sol.

 V  155
Vrms =  0    77.5volt It is V – i cherecterstic curve for a solar
 2  2
cell, where A represent open circuit
310
V0 = = 155 volt. voltage of solar cell and B represent short
2 circuit current.