Chapter 3 ROM
Chapter 3 ROM
scientific research
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Chapter 3:
Read Only Memory
(ROM)
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ROM characteristics
• A read-only memory
• Non-volatile
• The stored information must not be
modified
• Programmed by the user or manufacturer
• Constructed with:
▪ Diode
▪ Bipolar Transistor
• Different types are distinguished based on
whether they are reprogrammable (erasable)
or not
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Diode
• The diode is a semiconductor that primarily acts as a one-way
switch for current. It includes two terminals : Anode and Cathode.
• It allows current to to flow in only one direction
Va Vk
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Example
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Exemple 2
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Representation of information on a ROM
• In this memory, the bit ‘1’ is represented by the presence of a diode
that establishes a connection between the word line and the bit line.
The bit ‘0’ is materialized by the absence of a diode.
Fil de bit
• Pull down resistor Bit line
A0 A1 S0 S1 S2
0 0 1 0 0
Fil de mot
A0
0 1 0 1 1 Word line
A1
1 0 1 1 0
1 1 1 0 0
Figure : Exemple
d’une ROM à 12 bits
S0 S1 S2 S3 7
Representation of information on a ROM
• In this memory, the bit ‘0’ is represented by the presence of a diode
that establishes a connection between the word line and the bit line.
The bit ‘1’ is materialized by the absence of a diode.
Fil de bit
• Pull up resistor 5V Bit line
A0 A1 S0 S1 S2
0 0 1 0 0
Fil de mot
0 1 0 1 1 Word line
A0
1 0 1 1 0
A1
1 1 1 0 0
Figure : Exemple
d’une ROM à 12 bits
S0 S1 S2 S3 8
Exercise
• To build a full adder for two 1-bit numbers using pull down and
pull transistor
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Read operation
• The word selection sets the word line to '1' (5V voltage).
• The bit line is at '0' for all bits.
• If there is a diode connecting the word line to the bit line
(storing a '1'), the voltage on the anode becomes 5V.
• Since the cathode is at 0V (5V - 0V > Vthreshold), it allows
current to flow, placing the '1' information at the output.
• The absence of a diode prevents current from flowing, thus
retrieving a '0'.
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Write operation
• Since this memory is read-only, the user does not have the
capability to program (write) the ROM.
• The programming operation is carried out solely by the
manufacturer, who is provided with a mask that defines the
functions to be implemented by the ROM.
• The manufacturer only retains the diodes that generate the '1'
bits through a threshold voltage (𝑉threshold).
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Performance of ROM
• ROMs (Read-Only Memories) have access times ranging from
45 to 200 nanoseconds.
• The manufacturing cost is very high, making them
economically impractical for many applications.
Drawbacks of ROM:
➢ Programming is done exclusively by the manufacturer according to a
mask provided by the user, meaning it cannot be reprogrammed by the
end-user.
➢ The high manufacturing cost makes it unsuitable for applications
requiring frequent updates or modifications.
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Programmable ROM (PROM)
• PROMs are user-programmable,
addressing the limitation of traditional
ROMs.
• The structure of a PROM is similar to that
of a ROM.
• Each cell consists of a transistor
connected to the bit line through a fuse.
• The programming process involves
melting the fuses of the cells that are to
Image extracted from the book "Structure of
be set to '0'. Computers Around the Processor"
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Programming operation
A high voltage (25V) is applied to the collector. The
word line is set to 5V.
• Programming a 0 bit: If we want to write a 0, the
potential difference greater than the transistor's
threshold is created between the word line and the
bit line by setting the bit line to 0. The transistor then
flows enough current to melt the fuse.
• Programming a 1 bit: To keep the fuse intact, it is
necessary to prevent the transistor from conducting
current. To do this, simply apply a 5V voltage to the
bit line.
• The programming operation is followed by a
verification process to ensure the correctness of the Image extracted from the book "Structure of
result: Computers Around the Processor"
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Overview of PROM
Advantages: Limitations :
• More flexible than ROM, as the • Irreversible programming: Once
user can program it themselves. programmed, it cannot be
• Faster access time (15 modified if there is an error or if
nanoseconds). the user wants to make changes.
• Complex programming process:
Programming requires special
attention to avoid errors and
often requires specialized
equipment (device : PROM
programmer).
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Erasable PROM (EPROM)
• Two types of PROM that can be reprogrammed.
• Made using floating-gate transistors(transistors à grille
flottante) to store electrical charges (des charges électriques
de manière isolée, sans être connecté aux autres cellules et
stocker les données).
• Erasure: It must be exposed to an ultraviolet (UV) light source
for a certain amount of time (approximately 40 minutes).
▪ This UV exposure erases all data and requires the chip to be removed
from its socket (faut retirer l’objet pour l’appliquer).
▪ It can be erased and reprogrammed multiple times.
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Electrically EPROM (EEPROM)
• for more modern processors
• EEPROMs offer the ability to erase and rewrite data repeatedly
without the use of external devices (in an electronic manner).
• EEPROMs can be modified at will, without requiring a full memory
erase.
• This allows for specific data to be rewritten.
• It can be erased and reprogrammed approximately 10,000 times.
• The erase and reprogramming process takes between 4 to 10
milliseconds.
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Flash memory
• Type of EEPROM
• Allows writing a block of data at once, unlike standard
EEPROM, which writes one bit at a time.
• Requires erasing an entire block before rewriting.
• Less expensive and slower than EPROM.
• Capacity can reach up to 8 GB.
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Applications of ROMs
• ROM: Used as permanent storage for microprograms or boot
programs.
• PROM: Commonly used in game consoles, telephones, printers,
microcontrollers, BIOS, and graphics cards.EPROM: Used in
embedded system microcontrollers for storing software
components.
• EEPROM: Typically used for BIOS storage.
• Flash Memory: Used for data storage in USB drives, memory cards,
MP3 players, cameras, and game consoles.
• It is widely used in applications requiring frequent data updates.
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The end
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