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Assignment 8

The syllabus covers the construction, operation, and characteristics of bipolar junction transistors (BJT) and field effect transistors (FET), including JFET and MOSFET. It includes topics such as amplification, thermal runaway, pinch-off voltage, and Q-point stability, along with various calculations and diagrams related to these devices. The document also lists specific questions aimed at testing knowledge on these concepts, referencing Donald A. Neamen's book for answers.

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souryasirsha.mukherjee
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4 views1 page

Assignment 8

The syllabus covers the construction, operation, and characteristics of bipolar junction transistors (BJT) and field effect transistors (FET), including JFET and MOSFET. It includes topics such as amplification, thermal runaway, pinch-off voltage, and Q-point stability, along with various calculations and diagrams related to these devices. The document also lists specific questions aimed at testing knowledge on these concepts, referencing Donald A. Neamen's book for answers.

Uploaded by

souryasirsha.mukherjee
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Syllabus:

1) Bipolar junction transistors (BJT): Construction, operation and band diagram, BJT
configurations, load line and Q-point, Amplification, Leakage currents, Early effect, Ebers-
Moll equivalent circuit model, frequency limitation.
2) Field effect transistors: JFET:- structure, operation and Pinch-off voltage; MOSFET :-
structure and operation of concept of accumulation, depletion and inversion with band
bending, Threshold voltage: expression and dependencies, drain current equation in terms
of W/L (no derivation), drain current characteristics, channel length modulation, MOS
scaling and short channel effects (brief introduction), CMOS working principle and
switching.

Questions:

1) What is base width modulation in bipolar junction transistor?


2) What are the basic differences between BJT and FET?
3) Explain thermal runaway in BJT.
4) What happens when you apply a positive voltage on the gate of an N-channel MOS.
5) Draw the basic block diagram of an n channel JFET clearly labelling each part.
6) What happens if we try to increase the drain to source voltage beyond pinch off voltage?
7) State the significance of the term ‘Field effect’ with respect to JFET.
8) Name the materials used as metal, oxide and semiconductor in MOSFET.
9) State two differences between Enhancement type and Depletion type MOSFET.
10) What do you mean by threshold voltage in MOSFET?
11) Calculate collector current, emitter current for a transistor in CB mode whose current gain is
0.98, base current is 120 µA and reverse saturation current is 4 µA.
12) Calculate the common base current gain (α) and the base current for an npn transistor in CB
configuration whose emitter current is 4 mA, collector current is 3.95 mA and reverse
saturation current is 10 µA.
13) Explain the concept of Q point and stability factors regarding BJT.
14) Explain the operation of MOS in inversion mode. Draw the corresponding energy band
diagram of the MOS in this mode.
15) Draw the transfer characteristics of an n-channel JFET. Draw the block diagram of a p-channel
JFET.
16) Explain the operation of an n-channel JFET under pinch off condition with proper diagram.
Draw the Drain characteristics of this device.
17) Explain the operation of MOS capacitor in accumulation mode. Draw the corresponding
energy band diagram of the MOS in this mode. State one advantage of MOS over JFET.
18) What are the different biasing arrangements for getting a stable Q point? Explain any two of
them with proper circuit diagrams and equations.
19) Draw the common emitter circuit of a BJT, sketch its output characteristics, indicate cut-off,
saturation and active region and derive the relation between α, β and γ.
20) Explain the behavior of an n channel JFET, considering gradual increment of drain voltage and
zero gate voltage. Draw the corresponding diagrams. Explain why the channel width reduces
for large Drain to source voltage.
21) Explain the drain characteristic of n-channel MOSFET. Write the current equation for n-
channel MOSFET in linear and saturation region with proper condition.

[Please go through the book of Donald A. Neamen to find the answers]

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