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V-I Characteristics of Diode

The experiment aims to study the V-I characteristics of a P-N junction diode under forward and reverse bias conditions. It involves connecting the diode to a circuit with a DC voltage and measuring the current at various voltage levels. The results will help plot the characteristics graph and understand the behavior of the diode in different biasing scenarios.

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preetampanda2000
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8 views3 pages

V-I Characteristics of Diode

The experiment aims to study the V-I characteristics of a P-N junction diode under forward and reverse bias conditions. It involves connecting the diode to a circuit with a DC voltage and measuring the current at various voltage levels. The results will help plot the characteristics graph and understand the behavior of the diode in different biasing scenarios.

Uploaded by

preetampanda2000
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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EXPERIMENT NO-3

01. AIM OF THE EXPERIMENT: -

To study the V-I characteristics graph of P-N junction diode.

02. APPARATUS REQUIRED: -

 Patch chords
 V-I characteristics board
 Multi-meter
 Ammeter (mA, µA)

03. OBJECTIVE: -
To plot graph for forward and reverse biased condition of a P-N junction diode.

04. THEORY: -
4.1. BIASING

The process by which an external DC voltage is applied to the electric circuit in P-N
junction biasing is called dc analysis.

4.1.1 Forward Biasing


A diode is said to be forward biasing if the P-side is connected to positive terminal and
N-side is connected to negative terminal of the supply voltage.
At a particular voltage the width of the depletion region vanished and there is a
sharp rise in current and voltage as threshold or knee voltage.
4.1.2 Reverse Biasing
A diode is said to be forward biasing if the N-side is connected to positive terminal
and P-side is connected to negative terminal of the supply voltage.
Due to this more no of –Ve ions are generated in P-side and more no. of +Ve ions are
generated in N-side as a result width of the depletion region increases.
When the applied voltage is increased, as a particular point the diode will enter into
breakdown region and this negative voltage is known as peak inverse voltage (PIV)
So, the PIV is maximum reverse voltage that can be given to a diode just before
entering to the breakdown region.

05. PROCEDURE: -
For forward biased: -

 Connect the circuit in such a way that the positive side of the external DC is
connected to the P-side of the diode and negative side is connected to the N-side
of the diode.
 Ammeter and multi-meter are connected to the diode. The ammeter used here is
mile-ampere ammeter.
 Vary the DC voltage on steps up to 8V (up to knee voltage) and note down the
corresponding ammeter reading.

For reverse biased: -

 Connect the positive side of the external DC to N-side and negative side to P-
side of the diode.
 Vary the applied Va voltage to breakdown voltage.
 Note down the corresponding ammeter reading.
06. OBSERVATIONS: -

Forward Biased

Sl No. Voltage (V) in volt Current (I) in mA


1
2
3
4
5
6
7
8
9
10
11
12
13
14
15

Reverse Biased

Sl No. Voltage (V) in volt Current (I) in µA


1
2
3
4
5
6
7
8
9
10
11
12
13
14
15

07. CONCLUSION: -

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