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Module_3_Lecture_3 (1)

The document outlines the NMOS IC fabrication process, detailing the structure of the NMOS transistor and the steps involved in creating it. It describes the diffusion of p-type impurities into the substrate, the growth of oxide layers, and the application of photoresist layers for patterning. The process culminates in the formation of n-diffusion layers for source and drain terminals, followed by metal layer deposition for contacts.

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Mohammad Sania 22221882101
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4 views

Module_3_Lecture_3 (1)

The document outlines the NMOS IC fabrication process, detailing the structure of the NMOS transistor and the steps involved in creating it. It describes the diffusion of p-type impurities into the substrate, the growth of oxide layers, and the application of photoresist layers for patterning. The process culminates in the formation of n-diffusion layers for source and drain terminals, followed by metal layer deposition for contacts.

Uploaded by

Mohammad Sania 22221882101
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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Course: Introduction to VLSI design (19EEC334)

Unit-III: NMOS IC Fabrication process

Y.V.Appa Rao
Assistant Professor
Department of EECE.
GITAM Institute of Technology (GIT)
Visakhapatnam – 530045
Email: [email protected]
•STRUCTURE OF THE NMOS TRANSISTOR
•CONSISTS OF 4 TERMINALS NAMELY SOURCE,GATE,DRAIN
AND SUBSTRATE SHOWN BELOW

GATE

SOURCE DRAIN

N-DIFF N-DIFF

P-Substrate
P-TYPE IMPURITIES ARE DIFFUSED INTO SUBSTRATE

Substrate
SUBTRATE IS TURNED INTO P-TYPE

P-Substrate
A THICK OXIDE LAYER IS OF THICKNESS 1µm is GROWN OVER P-SUBTRATE

Oxide layer

P-Substrate
THE SURFACE OF OXIDE LAYER IS COVERED WITH PHOTO
RESIST LAYER

Photo resist
layer(-ve)

P-Substrate
Opaque Transparent
Transparent
Mask

P-Substrate
UV Rays

P-Substrate
The exposed region of photo resist layer is Hardened and
unexposed region of the photo resist layer is unaffected
and is removed by dipping in the development solution

P-Substrate
The oxide layer which is not covered by the photo
resist material is etched away or removed after
dipping in a buffered HF acid

P-Substrate
Later the remaining photo resist layer is removed
by immersing it in a hot acid

P-Substrate
Now the entire surface is covered with thin oxide
layer with thickness 0.1µm
Thin oxide layer is covered with poly silicon layer,
this layer will serve as the gate terminal
Then the entire surface is covered with photo resist
(+ve) layer and is masked
UV Rays

Mask
The un exposed region of the poly silicon is removed
The poly silicon layer which is not covered by photo resist
material is removed
The remaining photo resist material is removed
Gas containing n-diffusion particles
The n-type impurities gets diffused into substrate and
N-Diffusion layer is formed, which will be serving as
source and drain terminals

N-DIFF N-DIFF
The entire surface is covered with thick oxide layer and
is masked to form contact cuts

N-DIFF N-DIFF
CONTACT CUTS

N-DIFF N-DIFF
Later a metal layer is deposited on the entire surface
and is patterned in the below manner to have metal
contacts
GATE
SOURCE DRAIN

N-DIFF N-DIFF

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