A 0.5-V 12-Bit SAR ADC Using Adaptive Time-Domain Comparator With Noise Optimization
A 0.5-V 12-Bit SAR ADC Using Adaptive Time-Domain Comparator With Noise Optimization
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2764 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 53, NO. 10, OCTOBER 2018
Considering the power consumption of the comparator for a is developed to set the optimized time-domain threshold of
high-resolution ADC, the insertion of additional loading (C) is the ATD comparator for noise-and-power tradeoff optimiza-
widely adopted to suppress the input-referred noise by half at tion with a self-adjusted (Vctrlp − Vctrln ) depending on PVT
the expense of quadruple power consumption and comparison variation. An improved MCS scheme is also employed to
time. The bidirectional comparator [7] and cascade-input com- reduce the DAC switching energy without using additional
parator [8] were reported to avoid the dilemma of power and reference voltage. Overall, the proposed SAR ADC with the
noise. Nevertheless, in the conversion procedure of an SAR ATD comparator and the improved-MCS DAC provide a
ADC, only one to two times of critical decisions require a low-noise low-power solution without the needs of complex
low-noise comparison. Two-step architecture [9] was proposed redundancy design, coarse-fine operation, critical decision
to reduce the power consumption of non-critical comparisons detection, and additional reference voltage. The implemented
at the coarse conversion phase, combined with a high-power prototype achieves a figure-of-merit (FoM) performance of
and a low-noise fine ADC. However, a complex calibration 4.82 fJ/conversion step, which is low for ADCs of over
circuit and a global control circuit are required. Moreover, 10.5 bit.
in high-resolution ADC implementation, it is difficult to imple- The rest of this paper is organized as follows. Section II
ment a reasonable redundancy range for the noise tolerance of describes the architecture of the proposed design. Section III
the coarse conversion. The majority voting technique [10] used presents the detailed circuit implementation. Section IV
multiple comparisons at critical decisions to suppress the noise shows the measurement result, and Section V provides the
without two-step operation, which has an additional complex conclusion.
critical decision detection circuit. Furthermore, the inherent
noise of the critical decision circuit may cause fault detection II. ADC A RCHITECTURE
when the input level is small. There are only two modes Fig. 2 shows the proposed SAR ADC with the ATD
of noise performance with 1× or 5× voting which are not comparator, sample and hold (S and H), improved-MCS DAC,
completely adaptive to the input voltage level. The oscil- and asynchronous SAR logic. The improved-MCS DAC is
lation collapse comparator [11] was proposed to adaptively implemented with an 11-bit capacitor array using a unit
change its noise performance with different input levels by capacitance of 1.5 fF, which results in a kT/C noise of 0.3 LSB.
the latch-up of the closed-loop voltage-controlled delay line The double-boosted S and H [4] and local-boosted [4] switch-
(VCDL). However, the oscillation is ended with the ratio ing are implemented for leakage and linearity control in
of oscillation period and voltage-to-time gain of the delay low-voltage operation. To reduce the digital power consump-
element (DE), which is a process–voltage–temperature (PVT) tion, the asynchronous logic is implemented by dynamic shift
sensitive operation. registers with minimized transistor count.
By using the VCDL with positive feedback and a phase
detector (PD), this paper proposes an adaptive time-domain A. Improved MCS for DAC Switching
(ATD) comparator with adaptive oscillation circuit (AOC) [12] The concept of the conventional MCS procedure [5], [6]
that adjusts the noise performance by automatically enabling is adopted to reduce the switching energy consumption of
the oscillation loop of the VCDL, based on the interme- the DAC. To avoid the additional reference voltage Vcm
diate residual input level of the comparator during conver- requirement of MCS, we implement an improved MCS
sion. The differential threshold window (DTW) technique scheme by merging the bottom plates of the DAC at the
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HSIEH et al.: 0.5-V 12-bit SAR ADC USING ATD COMPARATOR 2765
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2766 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 53, NO. 10, OCTOBER 2018
and without (conventional time-domain comparators) adaptive comparator need special design considerations as described in
noise reduction is simulated as shown in Fig. 7(b). By detect- Section III.
ing the residual input level (equivalently, the time-delay dif-
ference after the AOC) and adaptively enabling oscillation at a A. Voltage-Controlled Delay Line
critical decision, the required power of the ATD comparator is The VCDL is implemented by cascaded stages of the
reduced by a factor of about 3.2, compared to the conventional voltage-controlled DE composed of a delay cell and buffer,
approach at a target ENOB of 11 bit. as shown in Fig. 8(a). The total input-referred noise of DE is
a combination of the delay cell and output buffer. From the
III. I MPLEMENTATION OF K EY B UILDING B LOCKS HSPICE noise simulation as shown in Fig. 8(b), the finger
To operate at 0.5 V with robustness of mismatch and number (m = 4) of M1 (and M0) is chosen to efficiently get
PVT variation, the key building blocks in the proposed ATD a noise level of 5.3 LSB since the noise reduction slope is
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HSIEH et al.: 0.5-V 12-bit SAR ADC USING ATD COMPARATOR 2767
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2768 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 53, NO. 10, OCTOBER 2018
Fig. 10. MATLAB simulation of (a) ENOB versus Vctrl and (b) FOM versus
Vcrtlp − Vcrtln .
Fig. 11. DAC switching for Vctrlp and Vctrln generations. C. Phase Detector
The PD has high-speed dynamic-D flip-flops (DFFs)
and SR latch for time-domain polarity decision. The true
the oscillator collapse-based comparator [11] consumes an single-phase clock (TSPC) operated DFFs are employed for
additional 70% of the VCDL power for the design margin the leading-edge detection of “data” and “clk” as shown
of PVT-variation. In contrast, the required additional DTW in Fig. 13. By favoring the data = 1 condition with the larger
(including the voltage generation of Vctrlp,n ) and PD circuits sizing of M1, M2, M3, and M4, the setup time of the PD
consume only 17% of the VCDL power. In order to find is minimized to avoid the dead zone issue which degrades
the best Twindow (controlled by Vctrlp − Vctrln ) of the DTW the DTW performance. The implemented setup time is 10 ps
under process variations, MATLAB behavioral simulation with which is only 7% of Twindow and is negligible.
a target sampling rate of 100 KHz is executed as shown in
Fig. 10(a) and 10(b). Using a VCDL composed of a single
DE for power and area savings, the DTW shows the achieved D. Meta-Stability Prevention of ATD Comparator
FoMs are optimized with a control voltage of around 36 In low- to medium-speed SAR ADCs, the probability of
VLSB . Fig. 11 shows the detailed operation of the extra DAC the meta-stability occurrence of the conventional comparator
(composed of extra DACp and extra DACn with 114c for is dramatically reduced with the positive feedback latch. How-
each) for the generation of the differential-ratio control voltage ever, the ATD comparator with open-loop operation may have
(Vctrlp − Vctrln ). At the DAC reset phase, both Vctrlp and a meta-stable condition in the extremely critical case with
Vctrln are connected to the generated Vcm (Section II-A) for small input difference (Vip Vin ). The resulting T of the
initialization. At the conversion phase, the bottom plates of small input voltage difference is so small that the accumulated
the 1c in the extra-DACp and extra-DACn are switched to Vdd time-delay difference after N oscillation cycles (N ∗ T ) is
and Vss . The generated voltage shifts of Vctrlp and Vctrln are still smaller than the target Twindow, which causes a sustained
+0.5 V/114 and −0.5 V/114, respectively. Since the VLSB = 1 oscillation and consumes a large amount of power. To omit the
V/4096, the achieved Vctrlp − Vctrln is 36 LSB (=4096/114). meta-stability induced oscillation, an additional meta-stability
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HSIEH et al.: 0.5-V 12-bit SAR ADC USING ATD COMPARATOR 2769
Fig. 15. MATLAB statistical result of the total oscillation cycle number per
sample. Fig. 17. Measured static performance.
IV. M EASUREMENT R ESULTS 10.75 bit, respectively. Fig. 19 shows the stable SNDR per-
Fig. 16 shows a micrograph of the prototype chip fabri- formance versus the input frequency with different sampling
cated in 1P9M 90-nm CMOS with an active area of 0.109 rates (100–250 kS/s). The control voltage (Vctrlp − Vctrln ) of
mm2 . Fig. 17 depicts the measured static performance of the the DTW can be externally adjusted in the test mode to
proposed ADC at 0.5-V and 100 kS/s. The MoM capacitor check the noise performance correlation with Twindow. Using
of the CDAC with the additional bottom-plate shielding metal a smaller (Vctrlp − Vctrln ), the number of oscillation cycles is
and a more uniform density [13] is adopted, which results in decreased, which results in a degraded SNDR and a faster
a higher matching performance. Thus, the measured peaks of achievable operational speed, as expected. Fig. 20 shows that
differential nonlinearity (DNL) and integral nonlinearity (INL) the total power dissipation is 0.81 μW ( f s = 100 kS/s) with
are +0.59/−0.7 LSB and +0.77/−0.88 LSB, respectively. a breakdown of 70% in the proposed comparator, 18% in the
Fig. 18 shows the measured dynamic performance of the DAC switching energy, and 12% in the digital control circuits.
implemented ADC with low and Nyquist input frequency Table I summarizes the performance comparison of the
at a sampling rate of 100 kS/s. The resultant SNDR and prototype with state-of-the-art low-power designs in 12-bit
corresponding ENOB at the Nyquist input are 66.48 dB and resolution. With the proposed ATD low-noise comparator,
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2770 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 53, NO. 10, OCTOBER 2018
TABLE I
C OMPARISON TABLE W ITH S TATE - OF - THE -A RT W ORKS
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[14] R. H. Walden, “Analog-to-digital converter survey and analysis,” IEEE Chen-Che Kao received the B.S. degree from
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Feb. 2014. applications. His current research interests include
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Chih-Cheng Hsieh received the B.S., M.S., and
Ph.D. degrees from the Department of Elec-
tronics Engineering, National Chiao-Tung Univer-
sity, Hsinchu, Taiwan, in 1990, 1991, and 1997,
Sung-En Hsieh received the B.S. degree in electrical respectively.
engineering from National Tsing Hua University, From 1999 to 2007, he was with IC Design House,
Hsinchu, Taiwan, in 2014, where he is currently Pixart Imaging Inc., Hsinchu, where he was involved
pursuing the Ph.D. degree. in the development of CMOS image sensor ICs
His research interests include low-power and low- for PC, consumer, and mobile phone applications.
voltage successive-approximation register (SAR) In 2007, he joined the Department of Electrical Engi-
AD converters, digital circuit optimization, and time- neering, National Tsing Hua University, Hsinchu,
to-digital converter design for oximeter application. where he is currently a Full Professor. His current research interests include
low-voltage low-power smart CMOS image sensor IC, ADC, and mixed-mode
IC development for artificial intelligence (AI), Internet of Things (IoT),
biomedical, space, robot, and customized applications.
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