FIAT Answer Key

Qn.n Answers Mar

o ks
1 C = A/d F 2
( diagram -1 mark)
2. A/d 2
Dielectric , Voltage , charge, area, distance (any three)
3. Series : 16+14 =30mH
Parallel : 24 x 36 / 60 = 14.4mH
4. Open Circuit : No current R high
Short circuit: No voltage, R almost zero
(related answers)
5. R = V/I at constant Temp
6. Used for amplification . Emitten Jn – FB, collector Jn - RB
7. Output Voltage at emitter = Input voltage at Base , used as buffer
8.

9. Majority carriers electrons – has high mobility, -ve grounded, high speed
switching (any one)
10. Input R is high, High voltage and power gain
11
a(i)

W = ½ CV2 J
11 W = ½ CV2 J
a(ii) ½ x 3 x 10 -12 x 20 x 20 = 600pJ
11 IL = 12 V / 6 = 2A
b(i) Vc = 12- 2 =10V
Wc = ½ C V2 = 50J
WL = ½ L I2 = 4J
12 a Explanation
i
12 b The Zener Diode is used in its “reverse bias” or reverse breakdown mode,
i.e. the diodes anode connects to the negative supply. From the I-V
characteristics curve above, we can see that the zener diode has a region in
its reverse bias characteristics of almost a constant negative voltage
regardless of the value of the current flowing through the diode.
 The Zener Diode Regulator
Zener Diodes can be used to produce a stabilised voltage output with low
ripple under varying load current conditions. By passing a small current
through the diode from a voltage source, via a suitable current limiting
resistor (RS), the zener diode will conduct sufficient current to maintain a
voltage drop of Vout.

12b • Solar Cell Definition: A solar cell (also known as a photovoltaic cell)
(ii) is defined as a device that converts light energy into electrical energy
using the photovoltaic effect.
• Working Principle: Solar cells generate electricity when light creates
electron-hole pairs, leading to a flow of current.
• Short Circuit Current: This is the highest current a solar cell can
provide under optimal conditions without being damaged.
• Open Circuit Voltage: The voltage across the solar cell’s terminals
when there is no load connected, typically around 0.5 to 0.6 volts.
• Efficiency: The efficiency of a solar cell is the ratio of its maximum
electrical power output to the input solar radiation power, indicating
how well it converts light to electricity.

13 Advantages of BJT :
a)
(i)  They have a better voltage gain
 They have a high current density
 They have a low forward voltage
 It can be operated in low to high power application
 BJT has a large gain bandwidth
  BJT shows better performance at high frequency
Disadvantages of BJT :
 BJT has a low thermal stability
 BJT is most effective by radiation
 BJT has more noise produced
 BJT has a low switching frequency
 BJT has a very complex control
 The switching time is not very fast compared to a high alternating
frequency of current and voltage

13
a(ii)

13
b(i) For the common base configuration to operate as an amplifier, the input
signal is applied to the emitter terminal and the output is taken from the
collector terminal. Thus the emitter current is also the input current, and the
collector current is also the output current, but as the transistor is a three
layer, two pn-junction device, it must be correctly biased for it to work as
a common base amplifier. That is the base-emitter junction is forward-
biased.
 The low input impedance of the common base amplifier circuit is one of the
main reason for its limited applications as a single stage amplifier.

14
a)

Cut off. The point where the load line intersects the IB = 0 curve is known
ascut off. At this point, IB = 0 and only small collector current (i.e. collector
leakage current ICEO) exists. At cut off, the base-emitter junction no longer
remains forward biased and normal transistor action is lost. The collector-
emitter voltage is nearly equal to VCC i.e. VCE (cut off) = VCC
Saturation. The point where the load line intersects the IB = IB(sat) curve is
called saturation. At this point, the base current is maximum and so is the
 collector current. At saturation, collector-base junction no longer remains
reverse biased and normal transistor action is lost.

14 NPN:
b)

Input Characteristic Curve

The curve plotted between base current IB and the base-emitter voltage
VEB is called Input characteristics curve. For drawing the input characteristic
the reading of base currents is taken through the ammeter on emitter voltage
VBE at constant collector-emitter current. The curve for different value of
collector-base current is shown in the figure below.

Output Characteristic
 In CE configuration the curve draws between collector current IC and
collector-emitter voltage VCE at a constant base current IB is called output
characteristic. The characteristic curve for the typical NPN transistor in CE
configuration is shown in the figure below.

15 a N capacitance in parallel Ceff = C1+C2+…… CN

(i) N capacitance in series: 1/ Ceff = 1/ C1 +1/C2 +…………1/CN
Derive from C = Q/V

15 a Total R =50; I = V / R = 0.48 A

(ii) Voltgae drops: 2.4 V, 4.8 V. 7.2 V and 9.6 V
15 b In common collector configuration, the collector terminal is grounded so the
common collector configuration is also known as grounded collector
configuration.

Input characteristics

The input characteristics describe the relationship between input current or

base current (IB) and input voltage or base-collector voltage (VBC).
To determine the input characteristics, the output voltage VEC is kept
constant at 3V and the input voltage VBC is increased from zero volts to
different voltage levels. For each level of input voltage VBC, the
corresponding input current IB is noted. A curve is then drawn between
input current IB and input voltage VBC at constant output
voltage VEC (3V).
Next, the output voltage VEC is increased from 3V to different voltage
level, say for example 5V and then kept constant at 5V. While increasing the
output voltage VEC, the input voltage VBC is kept constant at zero volts.

After we kept the output voltage VEC constant at 5V, the input
voltage VBC is increased from zero volts to different voltage levels. For
each level of input voltage VBC, the corresponding input current IB is
noted. A curve is then drawn between input current IB and input
voltage VBC at constant output voltage VEC (5V).

Output characteristics:

The output characteristics describe the relationship between output current

or emitter current (IE) and output voltage or emitter-collector voltage
(VEC).

To determine the output characteristics, the input current IB is kept constant

at zero micro amperes and the output voltage VEC is increased from zero
volts to different voltage levels. For each level of output voltage VEC, the
corresponding output current IE is noted. A curve is then drawn between
output current IE and output voltage VEC at constant input current IB (0
μA).

Next, the input current (IB) is increased from 0 μA to 20 μA and then kept
 constant at 20 μA. While increasing the input current (IB), the output

voltage (VEC) is kept constant at 0 volts.

After we kept the input current (IB) constant at 20 μA, the output voltage
(VEC) is increased from zero volts to different voltage levels. For each level
of output voltage (VEC), the corresponding output current (IE) is recorded.
A curve is then drawn between output current IE and output voltage VEC at
constant input current IB (20μA). This region is known as the active region
of a transistor.

In a transistor, emitter current= base current+collector current. It means

emitter current controls the collector current and base current. For a given
emitter current, collector current is controlled by base current. Therefore, the
change in collector current is related with the base current and not to the
base voltage change. That is why, the transistor is a current operating
device.

16 VL = L di / dt = 1e-3 d/dt (60e-3 cos 100t) V

a) (i) W = ½ LI2 = ½ x 1e-3 x 60 x 60e-6 J

16 a Total R = 60 ohm. I = 12 /60 =0.2 . Voltage : 4V and 8V

(ii)
16 LED:
b(i) For forward biasing the LED , the anode is connected to the positive
terminal of a battery and the cathode is connected to the negative terminal
of the battery

Applications:
 Opto-isolators
 Indicators and signs
 TV and VCR remote control.

Photo diode:
A photodiode is a p-n junction or pin semiconductor device that consumes
light energy to generate electric current. It is also sometimes referred as
photo-detector, photo-sensor, or light detector.
 A normal p-n junction diode allows a small amount of electric current under
reverse bias condition. To increase the electric current under reverse bias
condition, we need to generate more minority carriers.
The external reverse voltage applied to the p-n junction diode will supply
energy to the minority carriers but not increase the population of minority
carriers.
However, a small number of minority carriers are generated due to external
reverse bias voltage. The minority carriers generated at n-side or p-side will
recombine in the same material before they cross the junction. As a result,
no electric current flows due to these charge carriers.
• The various applications of photodiodes are
 Compact disc players
 Smoke detectors
 Space applications
 Photodiodes are used in medical applications such as computed
tomography, instruments to analyze samples, and pulse oximeters.

16 Total resitance = 20 x 60 / 80 =15 ohm

b(ii) I through 20 Ω = 30 / 20 = 1.5 A
I through 60 Ω = 30 / 60 = 0.5 A
Total current = 2A