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The document provides technical specifications for the 2SB1392 Silicon PNP Triple Diffused transistor, designed for low frequency power amplification. It includes absolute maximum ratings, electrical characteristics, package dimensions, and cautions regarding usage. The document emphasizes the importance of adhering to specified ratings and conditions to ensure product reliability and safety.

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0% found this document useful (0 votes)
12 views6 pages

M Xwuvyx

The document provides technical specifications for the 2SB1392 Silicon PNP Triple Diffused transistor, designed for low frequency power amplification. It includes absolute maximum ratings, electrical characteristics, package dimensions, and cautions regarding usage. The document emphasizes the importance of adhering to specified ratings and conditions to ensure product reliability and safety.

Uploaded by

pablo.dguez
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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2SB1392

Silicon PNP Triple Diffused

ADE-208-872 (Z)
1st. Edition
Sep. 2000

Application

Low frequency power amplifier

Outline

TO-220FM

1. Base
2. Collector
3. Emitter
12
3

Absolute Maximum Ratings (Ta = 25°C)


Item Symbol Ratings Unit
Collector to base voltage VCBO –70 V
Collector to emitter voltage VCEO –60 V
Emitter to base voltage VEBO –5 V
Collector current IC –4 A
Collector peak current I C(peak) –8 A
Collector power dissipation PC 2 W
1
PC * 25
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. Value at TC = 25°C.
2SB1392
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown V(BR)CBO –70 — — V I C = –10 µA, IE = 0
voltage
Collector to emitter breakdown V(BR)CEO –60 — — V I C = –50 mA, RBE = ∞
voltage
Emitter to base breakdown V(BR)EBO –5 — — V I E = –10 µA, IC = 0
voltage
Collector cutoff current I CBO — — –10 µA VCB = –50 V, IE = 0
I CEO — — –10 VCE = –50 V, RBE = ∞
2
DC current transfer ratio hFE1* 60 — 200 VCE = –4 V, IC = –1 A*1
hFE2 35 — — VCE = –4 V, IC = –0.1 A*1
Base to emitter voltage VBE — — –1.0 V VCE = –4 V, IC = –1 A*1
Collector to emitter saturation VCE(sat) — — –1.0 V I C = –2.0 A, IB = –0.2 A*1
voltage
Base to emitter saturation VBE(sat) — — –1.2 V I C = –2.0 A, IB = –0.2 A*1
voltage
Notes: 1. Pulse test.
2. The 2SB1392 is grouped by hFE1 as follows.

B C
60 to 120 100 to 200

Maximum Collector Dissipation Curve


Area of Safe Operation
30
–10
Collector power dissipation Pc (W)

iC (peak)
–5
1m
Collector Current IC (A)

–2 IC (max)
PW

20
=1

–1.0
DC

0m

–0.5
Ope

s
rati

–0.2
on

10 Ta = 25°C
–0.1 1 Shot pulse
(T C

–0.05
=2
5°C

–0.02
)

–0.01
0 50 100 150 –3 –10 –30 –100 –300
Case Temperature TC (°C) Collector to emitter Voltage VCE (V)

2
2SB1392

DC Current Transfer Ratio vs.


Typical Output Characteristics Collector Current
–5 1,000
0 –60
0 –8 –70
–10
–50

DC current transfer ratio hFE


–4 –40
Collector Current IC (A)

300 TC = 75°C
–30
25°C
–3
–25°C
–20 100
–2
–10 mA
30 VCE = –4 V
–1
TC = 25°C
IB = 0
10
0 –2 –4 –6 –8 –10 –0.1 –0.3 –1.0 –3 –10
Collector to emitter Voltage VCE (V) Collector current IC (A)

Saturation Voltage vs. Collector Current


–1.0
Collector to emitter saturation voltage

lC/lB = 10

–0.3
VCE (sat) (V)

–25°C
–0.1 TC = 25°C

25°C
–0.03

–0.01
–0.1 –0.3 –1.0 –3 –10
Collector current IC (A)

Transient Thermal Resistance


10
Thermal resistance θj-c (°C/W)

TC = 25°C
1.0

0.3

0.1
1m 10m 100m 1.0 10 100 1000

Time t (s)

3
2SB1392

Package Dimensions

10.0 ± 0.3 2.8 ± 0.2 Unit: mm


7.0 ± 0.3 φ 3.2 ± 0.2 2.5 ± 0.2

0.6

17.0 ± 0.3
12.0 ± 0.3
1.2 ± 0.2
5.0 ± 0.3

1.4 ± 0.2 4.45 ± 0.3


2.0 ± 0.3

14.0 ± 1.0
2.5

0.7 ± 0.1

2.54 ± 0.5 2.54 ± 0.5 0.5 ± 0.1

Hitachi Code TO-220FM


JEDEC —
EIAJ Conforms
Mass (reference value) 1.8 g

4
2SB1392

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.

Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
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Asia : http://sicapac.hitachi-asia.com
Japan : http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor Hitachi Europe GmbH Hitachi Asia Ltd. Hitachi Asia (Hong Kong) Ltd.
(America) Inc. Electronic Components Group Hitachi Tower Group III (Electronic Components)
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Fax: <49> (89) 9 29 30 00 URL : http://www.hitachi.com.sg Hong Kong
Hitachi Europe Ltd. Tel : <852>-(2)-735-9218
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Fax : <852>-(2)-730-0281
Electronic Components Group. (Taipei Branch Office)
Whitebrook Park URL : http://www.hitachi.com.hk
4/F, No. 167, Tun Hwa North Road,
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URL : http://www.hitachi.com.tw
Copyright  Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0

5
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